GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 262 ... LD 264 Wesentliche Merkmale Features * * * * * * * * * * GaAs-IR-Lumineszenzdiode Hohe Zuverlassigkeit Gruppiert lieferbar Gehausegleich mit BPX 80-Serie Miniatur-Gehause GaAs infrared emitting diode High reliability Available in bins Same package as BPX 80 series Miniature package Anwendungen Applications * Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb * Barcodeleser * Industrieelektronik * Messen/Steuern/Regeln" * Sensorik * Drehzahlsteuerung * * * * * * Typ Type IRED pro Zeile per Row Ma A" Bestellnummer Gehause Dimension "A" Ordering Code Package Zeilenbauform, Leiterbandgehause, klares Epoxy-Gieharz, linsenformig, Anschlusse im 2.54-mm-Raster (1/10''), Kathodenkennzeichnung: Nase am Lotspie Lead frame arrays, transparent epoxy resin lens, solder tabs, lead spacing 2.54 mm (1/10''), cathode marking: projection at solder lead min. max. LD 262 2 4.5 4.9 Q62703-Q70 LD 263 3 7 7.4 Q62703-Q71 LD 264 4 9.6 10 Q62703-Q72 2001-02-22 Miniature photointerrupters Barcode readers Industrial electronics For control and drive circuits Sensor technology Speed controller 1 LD 262 ... LD 264 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 80 C Sperrschichttemperatur Junction temperature Tj 80 C Sperrspannung Reverse voltage VR 5 V Durchlastrom Forward current IF 50 mA Stostrom, 10 s, D = 0 Surge current IFSM 1.6 A Verlustleistung Power dissipation Ptot 70 mW Warmewiderstand Thermal resistance RthJA RthJL 750 650 K/W K/W Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 50 mA, tp = 20 ms peak 950 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 50 mA, tp = 20 ms 55 nm Abstrahlwinkel Half angle 15 Grad deg. Aktive Chipflache Active chip area A 0.25 mm2 Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.5 x 0.5 mm Abstand Chipoberflache bis Linsenscheitel Distance chip surface to lens top H 1.3 ... 1.9 mm Kennwerte (TA = 25 C) Characteristics 2001-02-22 2 LD 262 ... LD 264 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 50 mA, RL = 50 Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 50 mA, RL = 50 tr, tf 1 s Kapazitat, VR = 0 V Capacitance Co 40 pF Durchlaspannung, IF = 50 mA, tp = 20 s Forward voltage VF 1.25 ( 1.4) V Sperrstrom, VR = 5 V Reverse current IR 0.01 ( 1) A Gesamtstrahlungsflu, IF = 50 mA, tp = 20 ms Total radiant flux e 9 mW Temperaturkoeffizient von Ie bzw. e, IF = 50 mA Temperature coefficient of Ie or e, IF = 50 mA TCI - 0.55 %/K Temperaturkoeffizient von VF, IF = 50 mA Temperature coefficient of VF, IF = 50 mA TCV - 1.5 mV/K Temperaturkoeffizient von peak, IF = 50 mA Temperature coefficient of peak, IF = 50 mA TC 0.3 nm/K Strahlstarke, IF = 50 mA, tp = 20 ms Radiant intensity e typ. 5 ( 2.5) mW/sr 2001-02-22 3 LD 262 ... LD 264 Relative Spectral Emission Irel = f () Radiant Intensity Single pulse, tp = 20 s OHRD1938 100 OHR01039 10 2 e e (100 mA) % rel e = f (IF ) e 100 mA Max. Permissible Forward Current IF = f (T A ) OHR01124 80 F mA 70 80 60 10 1 50 60 40 R thJL = 650 K/W 40 30 10 0 R thJA = 750 K/W 20 20 10 0 880 920 960 1000 nm 10 -1 10 -2 1060 OHR01042 10 1 A 10 0 10 1 A F OHR02182 10 4 F mA typ. 10 0 Permissible Pulse Handling Capability IF = f (), TC = 25 C, duty cycle D = parameter Forward Current IF = f (VE), single pulse, tp = 20 s F 0 10 -1 max. D= T D=0 0,005 0,01 0,02 F T 10 3 0,05 0,1 0,2 10 -1 10 2 0,5 DC 10 -2 1 1.5 2 2.5 3 3.5 10 1 -5 10 4 V 4.5 VF 10 -4 10 -3 10 -2 10 -1 s 10 0 Radiation Characteristics Irel = f () 40 30 20 10 0 OHR01878 1.0 50 0.8 60 0.6 70 0.4 0.2 80 0 90 100 1.0 2001-02-22 0.8 0.6 0.4 0 20 40 60 80 4 100 120 0 20 40 60 80 C 100 TA , TL LD 262 ... LD 264 0.5 (0.020) 0.4 (0.016) 2.54 (0.100) spacing 0.7 (0.028) 0 ... 5 0.6 (0.024) 0.25 (0.010) 0.15 (0.006) 2.1 (0.083) 1.5 (0.059) 3.0 (0.118) 7.0 (0.276) 3.5 (0.138) 7.4 (0.291) 2.7 (0.106) 2.5 (0.098) 1.9 (0.075) 1.7 (0.067) Chip position 3.6 (0.142) 3.2 (0.126) Mazeichnung Package Outlines A 0.4 A 1.4 (0.055) 1.0 (0.039) Collector (BPX 83) Cathode (LD 263) GEOY6367 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 5