IPB027N10N3 G
"%&$!"#®3 Power-Transistor
Features
Q' 3 81>>5<>? B=1<<5F5<
Q H3 5<<5>D71D53 81B75HR9H"[Z#@B? 4E3 D ( &
Q.5BI<? G? >B5C9CD1>3 5R9H"[Z#
Q T ? @5B1D9>7D5=@5B1DEB5
Q)2 6B55<514@<1D9>7+ ? " ,3 ? =@<91>D
Q* E1<9695413 3 ? B49>7D? $ )#6? BD1B75D1@@<93 1D9? >
Q#451<6? B89786B5AE5>3 ICG9D3 89>71>4CI>3 8B? >? ECB53 D9693 1D9? >
Q" 1<? 75>6B5513 3 ? B49>7D? #
Maximum ratings, 1DTV T E><5CC? D85BG9C5C@53 96954
Parameter Symbol Conditions Unit
? >D9>E? EC4B19>3 EBB5>D I9T8 T *# )*( 6
T8 T )*(
)E<C544B19>3 EBB5>D
*# I9$\aX_Q T8 T ,0(
F1<1>3 855>5B7IC9>7<5@E<C5 E6H I9  R=H ")((( Y@
!1D5C? EB3 5F? <D175 V=H q*( J
)? G5B49CC9@1D9? > P`[` T8 T +(( K
( @5B1D9>71>4CD? B175D5=@5B1DEB5 TVT_`S  T
# 3 <9=1D93 3 1D57? BI #' #   
Value
)#$ , - 1>4$ ,
*#, 55697EB5
V9H )(( J
R9H"[Z#$YMd *&/ Y"
I9)*( 6
Product Summary
Type #) ' ' !
Package E=%ID*.+%+
Marking (*/C)(C
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IPB027N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
-85B=1<B5C9CD1>3 5:E>3 D9? >3 1C5 R`T@8 % % (&- A'K
-85B=1<B5C9CD1>3 5 R`T@6 =9>9=1<6? ? D@B9>D
:E>3 D9? >1=2 95>D 3 =*3 ? ? <9>71B51+# % % ,(
Electrical characteristics, 1DTV T E><5CC? D85BG9C5C@53 96954
Static characteristics
B19>C? EB3 52 B51;4? G>F? <D175 V"7G#9HH V=H . I9 = )(( % % J
!1D5D8B5C8? <4F? <D175 V=H"`T# V9H4V=HI9 V * *&/ +&-
05B? 71D5F? <D1754B19>3 EBB5>D I9HH V9H .V=H . 
TV T % (&) ) r6
V9H . V=H . 
TV T % )( )((
!1D5C? EB3 5<51;1753 EBB5>D I=HH V=H . V9H . % ) )(( Z6
B19>C? EB3 5? >CD1D5B5C9CD1>3 5 R9H"[Z# V=H .I9  % *&+ *&/ Y"
V=H . I9  % *&0 ,&-
!1D5B5C9CD1>3 5 R=% )&1 % "
I^MZ_O[ZPaO`MZOQ gR_
gV9Hg5*gI9gR9H"[Z#YMd
I9  1, )00 % H
+# 5F93 5? > ==H ==H  ==5@? HI) + G9D8 3 =
*? >5<1I5B V =D893 ;3 ? @@5B1B516? B4B19>
3 ? >>53 D9? >) 9CF5BD93 1<9>CD9<<19B
Values
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IPB027N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
#>@ED3 1@13 9D1>3 5 CU__ % )))(( ),0(( \<
( ED@ED3 1@13 9D1>3 5 C[__ % )1,( *-0(
+ 5F5BC5DB1>C65B3 1@13 9D1>3 5 C^__ % .1 %
-EB>? >45<1ID9=5 tP"[Z# % +, % Z_
+ 9C5D9=5 t^% -0 %
-EB>? 6645<1ID9=5 tP"[RR# % 0, %
1<<D9=5 tR% *0 %
!1D5 81B
S
5 81B13 D5B9CD93 C
,#
!1D5D? C? EB3 53 81B75 QS_ % ,0 % Z8
!1D5D? 4B19>3 81B75 QSP % */ %
,G9D3 89>73 81B75 Q_c % ,* %
!1D53 81B75D? D1< QS% )-- *(.
!1D5@<1D51EF? <D175 V\XM`QMa % ,&+ % J
( ED@ED3 81B75 Q[__ V99 . V=H . % *(- */+ Z8
Reverse Diode
9? 453 ? >D9>? EC6? BG1B43 EBB5>D IH% % )*( 6
9? 45@E<C53 EBB5>D IH$\aX_Q % % ,0(
9? 456? BG1B4F? <D175 VH9 V=H . I<  
TV T % ) )&* J
+ 5F5BC5B53 ? F5BID9=5 t^^ % 0. % Z_
+ 5F5BC5B53 ? F5BI3 81B75 Q^^ % *+* % Z8
,#, 55697EB5 6? B71D53 81B75@1B1=5D5B4569>9D9? >
VG . I<4100 A
Pi<'Pt  V C
T8 T
Values
V=H . V9H . 
f & " J
V99 . V=H .
I9  R=  "
V99 . I9  
V=H D?  .
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IPB027N10N3 G
1 Power dissipation 2 Drain current
P`[`4R"T8#I94R"T8V=H" .
3 Safe operating area 4 Max. transient thermal impedance
I94R"V9HT8 T D4( Z`T@84R"t\#
@1B1=5D5Bt\@1B1=5D5BD4t\'T
V C
V C
V C
=C
=C
98
103
102
101
100
10-1
103
102
101
100
10-1
VDS [V]
ID[A]
<9=9D542 I? >CD1D5
^Q_U_`MZOQ
C9>7<5@E<C5
(&()
(&(*
(&(-
(&)
(&*
(&-
100
10-1
10-2
10-3
10-4
10-5
100
10-1
10-2
tp[s]
ZthJC [K/W]
0
50
100
150
200
250
300
350
0 50 100 150 200
TC[°C]
Ptot [W]
0
20
40
60
80
100
120
140
0 50 100 150 200
TC[°C]
ID[A]
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IPB027N10N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I94R"V9HTV T R9H"[Z#4R"I9TV T
@1B1=5D5BV=H @1B1=5D5BV=H
7 Typ. transfer characteristics 8 Typ. forward transconductance
I94R"V=HKV9Hg5*gI9gR9H"[Z#YMd gR_4R"I9TV T
@1B1=5D5BTV
 .
.
.
 .
.
0
1
2
3
4
5
0 40 80 120 160
ID[A]
RDS(on) [m ]
T
T
0
50
100
150
200
250
300
0 2 4 6
VGS [V]
ID[A]
0
40
80
120
160
200
240
0 40 80 120 160
ID[A]
gfs [S]
 .
.
 .
.
 .
.
(
0
50
100
150
200
250
300
0 1 2
VDS [V]
ID[A]
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IPB027N10N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R9H"[Z#4R"TVI9  V=H . V=H"`T#4R"TVV=H4V9H
@1B1=5D5BI9
11 Typ. capacitances 12 Forward characteristics of reverse diode
C4R"V9HV=H .f & " J I<4R"VH9#
@1B1=5D5BTV
`e\

0
1
2
3
4
5
6
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [m ]
V
V
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
8U__
8[__
8^__
105
104
103
102
101
0 20 40 60 80
VDS [V]
C[pF]
T
T
T 
T 
100
101
102
103
0 0.5 1 1.5 2
VSD [V]
IF[A]
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IPB027N10N3 G
13 Avalanche characteristics 14 Typ. gate charge
I6H4R"t6JR=H "V=H4R"QSM`QI9  @E<C54
@1B1=5D5BTV"_`M^`# @1B1=5D5BV99
15 Drain-source breakdown voltage 16 Gate charge waveforms
V7G"9HH#4R"TVI9 =
.
.
.
0
2
4
6
8
10
0 40 80 120 160
Qgate [nC]
VGS [V]
90
95
100
105
110
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS) [V]
V
=H
Q
gate
V
S _"`T#
Q
S"`T#
Q
S _
Q
S P
Q
_c
Q
g
T
T
T
1
10
100
1000
1 10 100 1000
tAV [µs]
IAS [A]
+ 5F  @175
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IPB027N10N3 G
PG-TO263-3: Outline
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IPB027N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
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