SFH 313
SFH 313 FA
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
SFH 313 SFH 313 FA
2000-09-20 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 460 nm bis 1080 nm (SFH 313) und bei
880 nm (SFH 313 FA)
• Hohe Linearität
• 5 mm-Plastikbauform
Anwendungen
• Computer-Blitzlichtgeräte
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code
SFH 313 Q62702-P1667
SFH 313-2/3 Q62702-P3598
SFH 313 FA Q62702-P1674
SFH 313 FA-2/3 Q62702-P3597
SFH 313 FA-3/4 Q62702-P5196
Features
• Especially suitable for applications from
460 nm to 1080 nm (SFH 313) and of 880 nm
(SFH 313 FA)
• High linearity
• 5 mm plastic package
Applications
• Computer-controlled flashes
• Photointerrupters
• Industrial electronics
• For control and drive circuits
2000-09-20 2
SFH 313, SFH 313 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Löttemperatur bei Tauchlötung
Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s
Dip soldering temperature ≥ 2 mm distance
from case bottom, soldering time t ≤ 5 s
TS260 °C
Löttemperatur bei Kolbenlötung
Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s
Iron soldering temperature ≥ 2 mm distance
from case bottom, soldering time t ≤ 3 s
TS300 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 70 V
Kollektorstrom
Collector current IC50 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current ICS 100 mA
Emitter-Kollektorspannung
Emitter-collector voltage VEC 7V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 200 mW
Wärmewiderstand
Thermal resistance RthJA 375 K/W
SFH 313, SFH 313 FA
2000-09-20 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 313 SFH 313 FA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 850 870 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ460 …1080 740 …1080 nm
Bestrahlungsempfindl iche Fläche
Radiant sensitive area A0.55 0.55 mm2
Abmessungen der Chipfläche
Dimensions of chip area L×B
L×W1×11×1mm×mm
Abstand Chipoberfläche zu
Gehäuseoberfläche
Distance chip front to case surface
H5.1 …5.7 5.1 …5.7 mm
Halbwinkel
Half angle ϕ± 10 ± 10 Grad
deg.
Kapazität, VCE = 5 V, f = 1 MHz, E=0
Capacitance CCE 10 10 pF
Dunkelstrom
Dark current
VCE = 10 V, E=0
ICEO 3 (≤ 200) 3 (≤ 200) nA
2000-09-20 4
SFH 313, SFH 313 FA
Directional Characteristics
Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-1 -2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V IPCE 2.5 …54…86.3…12.5 ≥ 10 mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf8101214µs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
IC = IPCEmin1) × 0.3,
Ee = 0.5 mW/cm2
VCEsat 150 150 150 150 mV
1) IPCEmin ist der minimale F ot os tr om der jew eiligen Gru ppe.
1) IPCEmin is the min. pho to cu rrent of the specified group.
OHF02330
02040 60 80 100 1200.40.60.81.0
100
90
80
70
60
50
0
10203040
0
0.2
0.4
0.6
0.8
1.0
ϕ
SFH 313, SFH 313 FA
2000-09-20 5
TA = 25 °C, λ = 950 nm
Relati ve Sp ectral Sensi ti vi ty,
SFH 313 Srel = f (λ)
Photocurrent IPCE = f (TA),
VCE = 5 V, normaliz ed t o 25 °C
Photocurrent
IPCE = f (VCE), E= paramete r
λ
OHF02332
0
rel
S
400
10
20
30
40
50
60
70
80
%
100
500 600 700 800 900 nm 1100
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
V
OHF02336
CE
PCE
Ι
0
10
0
10 20 30 40 50 V 70
10
1
mA
0.5 mW
cm
2
2
cm
mW
1
2
cm
mW
0.25
0.1 mW
cm
2
2
10
Relative Spectral Sensitivity,
SFH 313 FA Srel = f (λ)
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (TA), VCE = 10 V, E = 0
λ
OHF02331
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
E
OHF02337
e
PCE
Ι
10
0
-2
10
10
-1
1
10
mA
10
-3 -2
10
0
10mW/cm
2
10
2
T
OHF02342
A
0
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
nA
20 40 60 80 100˚C
Dark Current
ICEO = f (VCE), E = 0
Collecto r-E mi tter Capacitan ce
CCE = f (VCE), f = 1 MHz
Total Pow er Di ssip ation
Ptot = f (TA)
V
OHF02341
CE
0
CEO
Ι
-2
10
10
-1
10
0
10
1
10
2
nA
10 20 30 40 50 70V
V
OHF02344
CE
CE
C
0
10 -2 -1
10 0
10 1
10 10 2
V
pF
5
10
15
20
T
OHF02340
A
0
tot
P
020 40 60 80 ˚C 100
50
100
150
200
250
mW
2000-09-20 6
SFH 313, SFH 313 FA
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follo w s: m m (inc h).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of component and sha ll not be c ons idered as assur ed characteris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endangered.
Cathode (Diode)
GEXY6260
Collector (Transistor)
5.7 (0.224)
5.1 (0.201)
1.8 (0.071)
1.2 (0.047) Chip position
Cathode
5.9 (0.232)
5.5 (0.217)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
spacing
2.54 (0.100)
0.8 (0.031)
0.5 (0.020)
29 (1.142)
27 (1.063)
9.0 (0.354)
8.2 (0.323)
7.5 (0.295)
7.8 (0.307)
Area not flat
ø4.8 (0.189)
ø5.1 (0.201)
