DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
1Gb M-die DDR SDRAM Specification
Revision 0.6
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
1Gb M-die Revision History
Revision 0.0 (March, 2003)
- First version for internal review
Revision 0.1 (March, 2003)
- Complete DDR266 IDD current spec.
- Add A0(DDR200@CL=2.0) speed.
- Drop AA(DDR266@CL=2.0) speed.
Revision 0.2 (June, 2003)
- Delete speed A0(CL-tRCD-tRP : 2-2-2) and AA(CL-tRCD-tRP : 2-2-2)
- Correct tRFC to 120ns
Revision 0.3 (October, 2003)
- Modified DDR266 IDD current spec.
Revision 0.4 (October, 2003)
- Added DDR333 and x16 IDD current spec.
Revision 0.5 (November, 2003)
- Modified IDD2N current spec.
Revision 0.6 (February, 2004)
- Complete DC current spec.
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O tra nsa cti o ns on bot h edge s of da ta strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• tRFC(Refresh row cycle time) = 120ns
• Maximum burst refresh cycle : 8
• 66pin TSOP II pa ckage
*CL : CAS Latency
Operating Frequencies
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
Speed @CL2 133MHz 133MHz 100MHz
Speed @CL2.5 166MHz 133MHz 133MHz
Ordering Information
Part No. Org. Max Freq. Interface Package
K4H1G0438M-TC/LB3
256M x 4 B3(DDR333@CL=2.5)
SSTL2 66pin TSOP II
K4H1G0438M-TC/LA2 A2(DDR266@CL=2)
K4H1G0438M-TC/LB0 B0(DDR266@CL=2.5)
K4H1G0838M-TC/LB3
128M x 8 B3(DDR333@CL=2.5)
K4H1G0838M-TC/LA2 A2(DDR266@CL=2)
K4H1G0838M-TC/LB0 B0(DDR266@CL=2.5)
K4H1G1638M-TC/LB3
64M x 16 B3(DDR333@CL=2.5)
K4H1G1638M-TC/LA2 A2(DDR266@CL=2)
K4H1G1638M-TC/LB0 B0(DDR266@CL=2.5)
Key Features
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Pin Description
DM is internally loaded to match DQ and DQS identically.
1Gb TSOP-II Package Pinout
Row & Column address configuration
V
DD
1
66Pin TSOP
II
(400mil x 875mil)
DQ
0
2
V
DDQ
3
NC
4
DQ
1
5
V
SSQ
6
NC
7
DQ
2
8
V
DDQ
9
NC
10
DQ
3
11
V
SSQ
12
BA
0
20
CS
19
RAS
18
CAS
17
WE
16
NC
15
V
DDQ
14
NC
13
V
DD
27
A
3
26
A
2
25
A
1
24
A
0
23
AP/A
10
22
BA
1
21
V
SS
54
DQ
7
53
V
SSQ
52
NC
51
DQ
6
50
V
DDQ
49
NC
48
DQ
5
47
V
SSQ
46
NC
45
DQ
4
44
V
DDQ
43
A
11
35
36
CKE
37
CK
38
DM
39
V
REF
40
V
SSQ
41
NC
42
V
SS
55
A
4
56
A
5
57
A
6
58
A
7
59
A
8
60
A
9
34
(0.65mm Pin Pitch)
33
32
31
30
29
28
61
62
63
64
65
66
NC
NC
A
13
NC
NC
V
DD
NC
DQS
NC
V
SS
CK
NC
A
12
V
SS
NC
V
SSQ
NC
DQ
3
V
DDQ
NC
NC
V
SSQ
NC
DQ
2
V
DDQ
A
11
CKE
CK
DM
V
REF
V
SSQ
NC
V
SS
A
4
A
5
A
6
A
7
A
8
A
9
NC
DQS
NC
V
SS
CK
NC
A
12
V
DD
NC
V
DDQ
NC
DQ
0
V
SSQ
NC
NC
V
DDQ
NC
DQ
1
V
SSQ
BA
0
CS
RAS
CAS
WE
NC
V
DDQ
NC
V
DD
A
3
A
2
A
1
A
0
AP/A
10
BA
1
NC
NC
A
13
NC
NC
V
DD
Bank Address
BA0~BA1
Auto Precharge
A10
Organization Row Address Column Address
256Mx4 A0~A13 A0-A9, A11, A12
128Mx8 A0~A13 A0-A9, A11
64Mx16 A0~A13 A0-A9
256Mb x 4
128Mb x 8
V
DD
DQ
0
V
DDQ
DQ
1
DQ
2
V
SSQ
DQ
3
DQ
4
V
DDQ
DQ
5
DQ
6
V
SSQ
BA
0
CS
RAS
CAS
WE
LDM
V
DDQ
DQ
7
V
DD
A
3
A
2
A
1
A
0
AP/A
10
BA
1
NC
LDQS
A
13
NC
NC
V
DD
V
SS
DQ
15
V
SSQ
DQ
14
DQ
13
V
DDQ
DQ
12
DQ
11
V
SSQ
DQ
10
DQ
9
V
DDQ
A
11
CKE
CK
UDM
V
REF
V
SSQ
DQ
8
V
SS
A
4
A
5
A
6
A
7
A
8
A
9
NC
UDQS
NC
V
SS
CK
NC
A
12
64Mb x 16
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Units : Millimeters
0.30±0.08
0.65TYP(0.71)
22.22±0.10
0.125
(0.80)
10.16±0.10
0×~8×
#1 #33
#66 #34
(1.50)
(1.50)
0.65±0.08
1.00±0.10
1.20MAX
(0.50) (0.50)(10.16)
11.76±0.20
(10×)(10×)
+0.075
-0.035
(0.80)
0.10 MAX
0.075 MAX
[]
0.05 MIN
(10×)
(10×)
(R0.15)
0.210±0.05
0.665±0.05
(R0.15)
(4×)
(R0.25)
(R0.25)
0.45~0.75
0.25TYP
NOTE
1. ( ) IS REFERENCE
2. [ ] IS ASS’Y OUT QUALITY
66pin TSOPII / Package dimension
Package Physical Demension
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Bank Select
T iming Register
Address Register
Refresh Counter
Row Buffer
Row Decoder Col. Buffer
Data Input Register
Serial to parallel
32Mx8/ 16Mx16/ 8Mx32
Sense AMP
2-bit prefetch
Output BufferI/O Control
Column Decoder
Latency & Burst Length
Programming Register
DLL
Strobe
Gen.
CK, CK
ADD
LCKE
CK, CK CKE CS RAS CAS WE
CK, CK
LCAS
LRAS LCBR LWE LWCBR
LRAS
LCBR
CK, CK
x8/16/32
x8/16/32 x4/8/16
x4/8/16 LWE
x4/8/16
DQi
Data Strobe
Block Diagram (64Mbit x 4 / 32Mbit x 8 / 16Mbit x 16 I/O x 4 Banks)
L(U)DM
DM Input Register
32Mx8/ 16Mx16/ 8Mx32
32Mx8/ 16Mx16/ 8Mx32
32Mx8/ 16Mx16/ 8Mx32
LDM
LDM
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
SYMBOL TYPE DESCRIPTION
CK, CK Input Clock : CK and CK are differential clock inputs. All address and control input signals are sam-
pled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to
both edges of CK. Internal clock signals are derived from CK/CK.
CKE Input
Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Deactivating the clock provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN
(row ACTIVE in any bank). CKE is synchronous for all functions except for disabling outputs,
which is achieved asynchronously. Input buffers, excluding CK, CK and CKE are disabled dur-
ing power-down and self refresh modes, providing low standby power. CKE will recognize an
LVCMOS LOW level prior to VREF being stable on power-up.
CS Input Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command
decoder. All commands are masked when CS is registered HIGH. CS provides for external
bank selection on systems with multiple banks. CS is considered p art of the command code.
RAS, CAS, WE Input Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.
LDM,(UDM) Input
Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH along with that input data during a WRITE access. DM is sampled on both
edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS
loading. For the x16, LDM corresponds to the dat a on DQ0~D7 ; UDM corresponds to the dat a
on DQ8~DQ15. DM may be driven high, low , or floating during READs.
BA0, BA1 Input Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRE-
CHARGE command is being applied.
A [0 : 13] Input
Address Inputs : Provide the row address for ACTIVE commands, and the column address and
AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the mem-
ory array in the respective bank. A10 is sampled during a PRECHARGE command to deter-
mine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also
provide the op-code during a MODE REGISTER SET command. BA0 and BA1 define which
mode register is loaded during the MODE REGISTER SET command (MRS or EMRS).
DQ I/O Data Input/Output : Data bus
LDQS,(U)DQS I/O Data Strobe : Output with read data, input with write data. Edge-aligned with read data, cen-
tered in write data. Used to capture write data. For the x16, LDQS corresponds to the dat a on
DQ0~D7 ; UDQS corresponds to the data on DQ8~DQ15
NC - No Connect : No internal electrical connection is present.
VDDQ Supply DQ Power Supply : +2.5V ± 0.2V.
VSSQ Supply DQ Ground.
VDD Supply Power Supply : +2.5V ± 0.2V (device specific).
VSS Supply Ground.
VREF Input SSTL_2 reference voltage.
Input/Output Function Description
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Command T ruth Table (V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
COMMAND CKEn-1 CKEn CS RAS CAS WE BA0,1 A10/AP A0 ~ A9,
A11 ~ A13 Note
Register Extended MRS H X L L L L OP CODE 1, 2
Register Mode Register Set H X L L L L OP CODE 1, 2
Refresh
Auto Refresh HHLL LH X 3
Self
Refresh
Entry L 3
Exit L H LHHH X3
HX X X 3
Bank Active & Row Addr. H X L L H H V Row Address
Read &
Column Address Auto Precharge Disable HXLHLHV LColumn
Address 4
Auto Precharge Enable H 4
Write &
Column Address Auto Precharge Disable HXLHLLV LColumn
Address 4
Auto Precharge Enable H 4, 6
Burst Stop H X L H H L X 7
Precharge Bank Selection HXLLHLVL X
All Banks X H 5
Active Power Down Entry H L HX X X XLV V V
Exit L H X X X X
Precharge Power Down Mode Entry H L HX X X
X
LHHH
Exit L H HX X X
LV V V
DM(UDM/LDM for x16 only) H X X 8
No operation (NOP) : Not defined H X HX X X X9
LHHH 9
1. OP Code : Operand Code. A0 ~ A13& BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2. EMRS/MRS can be issued only at all banks precharge st ate.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM(x4/8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (W rite DM latency is 0).
UDM/LDM(x16 only) sampled at the rising and falling edges of the UDQS/LDQS and Data-in are masked at the both edges
(Write UDM/LDM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
Note :
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
64M x 4Bit x 4 Banks / 32M x 8Bit x 4 Banks / 16M x 16Bit x 4 Banks Double Data
The K4H1G0438M / K4H1G0838M / K4H1G1638M is 1,073,741,824 bits of double data rate synchronous DRAM organized as 4x
67,108,864/ 4x 33,554,432 / 4x 16,777,216 words by 4/ 8/16bit s, fabricated with SAMSUNG′s high perfor mance CMOS technology. Syn-
chronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both
edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful
for a variety of high performance memory system applications.
General Description
Absolute Maximum Rating
Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 3.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD1.5 W
Short circuit current IOS 50 mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Rate SDRAM
DC Operating Conditions Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70 °C)
Parameter Symbol Min Max Unit Note
Supply voltage(for device with a nominal VDD of 2.5V) VDD 2.3 2.7
I/O Supply voltage VDDQ 2.3 2.7 V
I/O Reference voltage VREF 0.49*VDDQ 0.51*VDDQ V 1
I/O Termination voltage(system) VTT VREF-0.04 VREF+0.04 V2
Input logic high voltage VIH(DC) VREF+0.15 VDDQ+0.3 V
Input logic low voltage VIL(DC) -0.3 VREF-0.15 V
Input Voltage Level, CK and CK inputs VIN(DC) -0.3 VDDQ+0.3 V
Input Differential Voltage, CK and CK inputs VID(DC) 0.36 VDDQ+0.6 V 3
V-I Matching: Pullup to Pulldown Current Ratio VI(Ratio) 0.71 1.4 - 4
Input leakage current II-2 2 uA
Output leakage current IOZ -5 5 uA
Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V IOH -16.8 mA
Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V IOL 16.8 mA
Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V IOH -9 mA
Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V IOL 9mA
1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same.
Peak-to peak noise on VREF may not exceed +/-2% of the dc value.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and volt age, over the entire
temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the
maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the
maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
Note :
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
DDR SDRAM Spec Items & Test Conditions
Conditions Symbol
Operating current - One bank Active-Precharge;
tRC=tRCmin; tCK=7.5ns for DDR266, 6ns for DDR333;
DQ,DM and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
IDD0
Operating current - One bank operation ; One bank open, BL=4, Reads
- Refer to the following page for detailed test cond ition IDD1
Percharge power-down standby current; All banks idle; power - down mode;
CKE = <VIL(max); tCK=7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM. IDD2P
Precharge Floating st andby current; CS# > =VIH(min);All banks idle; CKE > = VIH(min); tCK=7.5ns for DDR266,
6ns for DDR333; Address and other control inputs changing once per clock cycle;
Vin = Vref for DQ,DQS and DM IDD2F
Precharge Quiet standby current; CS# > = VIH(min); All banks idle;
CKE > = VIH(min); tCK=7.5ns for DDR266, 6ns for DDR333; Address and other control inputs stable at >=
VIH(min) or =<VIL(max); Vin = Vref for DQ ,DQS and DM IDD2Q
Active power - down standby current ; one bank active; power-down mode;
CKE=< VIL (max); tCK=7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM IDD3P
Active standby current; CS# >= VIH(min); CKE>=VIH(min);
one bank active; active - precharge; tRC=tRASmax; tCK=17.5ns for DDR266, 6ns for DDR333;
DQ, DQS and DM inputs changing twice per clock cycle; address and other control inputs changing once per clock
cycle
IDD3N
Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control
inputs changing once per clock cycle; CL=2 at 7.5ns for DDR266(A2), CL=2.5 at 7.5ns for DDR266(B0), 6ns for
DDR333; 50% of data changing on every transfer; lout = 0 m A IDD4R
Operating current - burst write; Burst length = 2; writes; continuous burst;
One bank active address and control inputs changing once per clock cycle; CL=2 at tCK=7.5ns for DDR266(A2),
CL=2.5 at tCK=7.5ns for DDR266(B0), 6ns for DDR333; DQ, DM and DQS inputs changing twice per clock cycle,
50% of input data changing at every burst
IDD4W
Auto refresh current; tRC = tRFC(min) - 16*tCK for DDR266 at tCK=7.5ns; 20*tCK for DDR333 at tCK=6ns; dis-
tributed refresh IDD5
Self refresh current; CKE =< 0.2V; External clock on; tCK=7.5ns for DDR266, 6ns for DDR333. IDD6
Operating current - Four bank operation ; Four bank interleaving with BL=4
-Refer to the following page for detailed test condition IDD7A
Input/Output Capacitance (VDD=2.5, VDDQ=2.5V, T A= 25°C, f=1MHz)
Parameter Symbol Min Max Delta Unit Note
Input capacitance
(A0 ~ A13, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)CIN1 2 3 0.5 pF 4
Input capacitance( CK, CK ) CIN2 2 3 0.25 pF 4
Data & DQS input/output capacitance COUT 4 5 0.5 pF 1,2,3,4
Input capacitance(DM for x4/8, UDM/LDM for x16) CIN3 4 5 pF 1,2,3,4
1.These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the i nput cap acitance of this pin must model the input capacit ance of the DQ and DQS pins.
This is required to match signal propagation times of DQ, DQS, and DM in the system.
3. Unused pins are tied to ground.
4. This parameteer is sampled. VDDQ = +2.5V +0.2V, VDD = +3.3V +0.3V or +0.25V+0.2V, f=100MHz, tA=25°C, Vout(dc) =
VDDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading
(to facilitate trace matching at the board level).
Note :
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
IDD7A : Operating current: Four bank operation
1. Typical Case : Vdd = 2.5V, T=25’ C
2. Worst Case : Vdd = 2.7V, T= 10’ C
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Timing patterns
- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*100% of data changing at every burst
- A2(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*100% of data changing at every burst
- B3(166Mhz,CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*100% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
< Detailed test conditions for DDR SDRAM IDD1 & IDD7A >
IDD1 : Operating current: One bank operation
1. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA
2. Timing patterns
- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK
Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- A2 (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK
Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- B3(166Mhz, CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRCD=3*tCK, tRC = 10*tCK, tRAS=7*tCK
Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
DDR SDRAM IDD spec table (VDD=2.7V, T = 10°C)
Symbol 256Mx4 (K4H1G0438M) Unit Notes
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0 140 120 120 mA
IDD1 170 150 150 mA
IDD2P 6 6 6 mA
IDD2F 35 30 30 mA
IDD2Q 30 25 25 mA
IDD3P 30 30 30 mA
IDD3N 60 55 55 mA
IDD4R 190 160 160 mA
IDD4W 260 215 215 mA
IDD5 300 285 285 mA
IDD6 Normal 8 8 8 mA
Low power mA Optional
IDD7A 410 350 350 mA
Symbol 128Mx8 (K4H1G0838M) Unit Notes
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0 140 120 120 mA
IDD1 170 150 150 mA
IDD2P 6 6 6 mA
IDD2F 35 30 30 mA
IDD2Q 30 25 25 mA
IDD3P 30 30 30 mA
IDD3N 60 55 55 mA
IDD4R 200 170 170 mA
IDD4W 260 230 230 mA
IDD5 300 285 285 mA
IDD6 Normal 8 8 8 mA
Low power mA Optional
IDD7A 430 370 370 mA
Symbol 64Mx16 (K4H1G1638M) Unit Notes
B3(DDR333@CL=2.5) A2(DDR266@CL=2.0) B0(DDR266@CL=2.5)
IDD0 140 120 120 mA
IDD1 180 160 160 mA
IDD2P 6 6 6 mA
IDD2F 35 30 30 mA
IDD2Q 30 25 25 mA
IDD3P 30 30 30 mA
IDD3N 60 55 55 mA
IDD4R 230 200 200 mA
IDD4W 280 250 250 mA
IDD5 300 285 285 mA
IDD6 Normal 8 8 8 mA
Low power mA Optional
IDD7A 460 400 400 mA
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
AC Operating Conditions
Parameter/Condition Symbol Min Max-10 Unit Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals. VIL(AC) VREF - 0.31 V
Input Diff erential Voltage, CK and /CK inputs VID(AC) 0.7 VDDQ+0.6 V 1
Input Crossing Point Voltage, CK and /CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2
AC Overshoot/Undershoot specification for Address and Control Pins
Parameter Specification
DDR333 DDR200/266
Maximum peak amplitude allowed for overshoot TBD 1.5 V
Maximum peak amplitude allowed for undershoot TBD 1.5 V
The area between the overshoot signal and VDD must be less than or equal to TBD 4.5 V-ns
The area between the undershoot signal and GND must be less than or equal to TBD 4.5 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5 00.5
0.6875
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
6.3125
6.5 7.0
VDD Overshoot
Maximum Amplitude = 1.5V
Area = 4.5V-ns
Maximum Amplitude = 1.5V
undershoot
GND
Volts (V)
Tims(ns)
AC overshoot/Undershoot Definition
Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter Specification
DDR333 DDR200/266
Maximum peak amplitude allowed for overshoot TBD 1.2 V
Maximum peak amplitude allowed for undershoot TBD 1.2 V
The area between the overshoot signal and VDD must be less than or equal to TBD 2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to TBD 2.4 V-ns
5
4
3
2
1
0
-1
-2
-3
-4
-5 0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.4V-ns
Maximum Amplitude = 1.2V
undershoot
GND
Volts (V)
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
AC Timming Parameters & Specifications
Parameter Symbol B3
(DDR333@CL=2.5)) A2
(DDR266@CL=2.0) B0
(DDR266@CL=2.5)) Unit Note
Min Max Min Max Min Max
Row cycle time tRC 60 65 65 ns
Refresh row cycle time tRFC 120 120 120 ns
Row active time tRAS 42 70K 45 120K 45 120K ns
RAS to CAS delay tRCD 1 8 20 20 n s
Row precharge time tRP 18 20 20 ns
Row active to Row active delay tRRD 12 15 15 ns
Write recovery time tWR 15 15 15 ns
Last data in to Read command tWTR 1 1 1 tCK
Col. address to Col. address delay tCCD 1 1 1 tCK
Clock cycle time CL=2.0 tCK 7.5 12 7.5 12 10 12 ns
CL=2.5 6 127.5127.512ns
Clock high level width tCH 0.45 0.55 0.45 0.55 0.45 0.55 tCK
Clock low level width tCL 0.45 0.55 0.45 0.55 0.45 0.55 tCK
DQS-out access time from CK/CK tDQSCK -0.6 +0.6 -0.75 +0.75 -0.75 +0.75 ns
Output data access time from CK/ tAC -0.7 +0.7 -0.75 +0.75 -0.75 +0.75 ns
Data strobe edg e to ouput data tDQSQ - 0.45 - 0.5 - 0.5 ns 12
Read Preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK
Read Postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK
CK to valid DQS-in tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 tCK
DQS-in setup time tWPRES 0 0 0 ns 3
DQS-in hold time tWPRE 0.25 0.25 0.25 tCK
DQS falling edge to CK ri sing-setup tDSS 0.2 0.2 0.2 tCK
DQS falling edge from CK rising- tDSH 0.2 0.2 0.2 tCK
DQS-in high level width tDQSH 0.35 0.35 0.35 tCK
DQS-in low level width tDQSL 0.35 0.35 0.35 tCK
DQS-in cycle time tDSC 0.9 1.1 0.9 1.1 0.9 1.1 tCK
Address and Control Input setup tIS 0.75 0.9 0.9 ns i,5.7~9
Address and Control Input hold tIH 0.75 0.9 0.9 ns i,5.7~9
Address and Control Input setup tIS 0.8 1.0 1.0 ns i, 6~9
Address and Control Input hold tIH 0.8 1 .0 1.0 ns i, 6~9
Data-out high impedence time from
CK/CK tHZ +0.7 +0.75 +0.75 ns 1
Data-out lo w impedence time from
CK/CK tLZ - 0 .7 +0.7 -0.75 +0.75 -0.75 +0.75 ns 1
Output Slew Rate Matching tSLMR 0.67 1.5 0.67 1.5 0.67 1.5
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Parameter Symbol B3
(DDR333@CL=2.5)) A2
(DDR266@CL=2.0) B0
(DDR266@CL=2.5) Unit Note
Min Max Min Max Min Max
Mode register set cycle time tMRD 12 15 15 ns
DQ & DM setup time to DQS tDS 0.45 0.5 0.5 ns j, k
DQ & DM hold time to DQS tDH 0.45 0.5 0.5 ns j, k
Control & Address input pulse tIPW 2.2 2.2 2.2 ns 8
DQ & DM input pulse width tDIPW 1.75 1.75 1.75 ns 8
Power down exit time tPDEX 6 7.5 7.5 ns
Exit self refresh to non-Read com- tXSNR 75 75 75 ns
Exit self refresh to read command tXSRD 200 200 200 tCK
Refresh interval time tR EFI 7.8 7.8 7.8 us 4
Output DQS valid wi ndow tQH tHP
-tQHS -tHP
-tQHS -tHP
-tQHS -ns11
Clock half period tHP tCLmin
or tCHmin -tCLmin
or tCHmin -tCLmin
or tCHmin - ns 10, 11
Data hold skew factor tQHS 0.55 0.75 0.75 ns 11
DQS write postamble time tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK 2
Active to Read with Auto precharge
command tRAP 18 20 20
Autoprecharge write recovery +
Precharge time tDAL (tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK) tCK 13
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333 & DDR266 devices to ensure proper sys-
tem performance. these characteristics are for system simulation purpose s and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
AC CHARACTERISTICS DDR333 DDR266
PARAMETER SYMBOL MIN MAX MIN MAX Units Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC) DCSLEW TBD TBD TBD TBD V/ns a, m
Input Slew Rate tIS tIH Units Notes
0.5 V/ns 0 0 ps i
0.4 V/ns +50 0 ps i
0.3 V/ns +100 0 ps i
Input Slew Rate tDS tDH Units Notes
0.5 V/ns 0 0 ps k
0.4 V/ns +75 +75 ps k
0.3 V/ns +150 +150 ps k
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Table 7 : Output Slew Rate Matching Ratio Characteristics
Delta Slew Rate tDS tDH Units Notes
+/- 0.0 V/ns 0 0 ps j
+/- 0.25 V/ns +50 +50 ps j
+/- 0.5 V/ns +100 +100 ps j
Slew Rate Characteristic Typical Range
(V/ns) Minimum
(V/ns) Maximum
(V/ns) Notes
Pullup Slew Rate 1.2 ~ 2.5 1.0 4.5 a,c,d,f,g,h
Pulldown slew 1.2 ~ 2.5 1.0 4.5 b,c,d,f,g,h
Slew Rate Characteristic Typical Range
(V/ns) Minimum
(V/ns) Maximum
(V/ns) Notes
Pullup Slew Rate 1.2 ~ 2.5 0.7 5.0 a,c,d,f,g,h
Pulldown slew 1.2 ~ 2.5 0.7 5.0 b,c,d,f,g,h
AC CHARACTERISTICS DDR266
PARAMETER MIN MAX Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown) TBD TBD e,m
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Component Notes
1. tHZ and tLZ transitions occur in the same access time windows as valid dat a transitions. these parameters are not referenced to a
specific voltage level but specify when the device output in no longer driving (HZ), or begins driving (LZ).
2. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys
tem performance (bus turnaround) will degrade accordingly.
3. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A
valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ
ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW . If a previous write was in progress, DQS could
be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
4. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
5. For command/address input slew rate ≥ 1.0 V/ns
6. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns
7. For CK & CK slew rate ≥ 1.0 V/ns
8. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by
device design or tester correlation.
9. Slew Rate is measured between VOH(ac) and VOL(ac).
10. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the
period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into
the clock traces.
11. tQH = tHP - tQHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS account s for 1) The
pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst
case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and p-
channel to n-channel variation of the output drivers.
12. tDQSQ
Consists of data pin skew and output p attern ef fects, and p-channel to n-channel variation of the output drivers for any given cycle.
13. tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and
tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3)
tDAL = 5 clocks
System Notes :
a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1.
Output Test point
VSSQ
50Ω
Figure 1 : Pullup slew rate test load
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
b. Pulldown slew rate is measured under the test conditions shown in Figure 2.
Output Test point
VDDQ
50Ω
Figure 2 : Pulldown slew rate test load
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV)
Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output
switching.
Example : For typical slew rate, DQ0 is switching
For minmum slew rate, all DQ bits are switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
d. Evaluation conditions
Typical : 25 °C (T Ambient), VDDQ = 2.5V, typical process
Minimum : 70 °C (T Ambient), VDDQ = 2.3V, slow - slow process
Maximum : 0 °C (T Ambient), VDDQ = 2.7V, fast - fast process
e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and
voltage range. For a given output, it represent s the maximum diff erence between pullup and pulldown drivers due to process variation.
f. Verified under typical conditions for qualification purposes.
g. TSOPII package divices only.
h. Only intended for operation up to 266 Mbps per pin.
i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns
as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or
VIH(DC) to VIL(DC), similarly for rising transitions.
j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates dif fer, as shown in Tables 3 & 4.
Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the
slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
The delta rise/fall rate is calculated as:
{1/(Slew Rate1)} - {1/(Slew Rate2)}
For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta r ise, fall rate is - 0.5ns/V . Using the t able given, this
would result in the need for an increase in tDS and tDH of 100 ps.
k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Maximum
Typical High
Minumum
Vout(V)
Iout(mA)
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0 1.0 2.0
Minimum
Typical Low
Typical High
Maximum
0
20
40
60
80
100
120
140
160
0.0 0.5 1.0 1.5 2.0 2.5
Iout(mA)
Typical Low
Vout(V)
Pullup Characteristics for Full Strength Output Driver
Pulldown Characteristics for Full Strength Output Driver
IBIS :I/V Characteristics for Input and Output Buffers
DDR SDRAM Output Driver V-I Characteristics
DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.
Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input
into simulation tools. The driver characteristcs evaluation conditions are:
Output Driver Characteristic Curves Notes:
1. The full variation in driver current from minimum to maximum process, temperature and volt age will li e within the outer bo un ding lines
the of the V-I curve of Figure 3 and 4.
2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4.
3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity +/- 10%, for device drain to
source voltages fr om 0.1 to1.0. This specification is a design objective only. It is not guaranteed.
Typical 25×C Vdd/Vddq = 2.5V, typical process
Minimum 70×C Vdd/Vddq = 2.3V, slow-slow process
Maximum 0×C Vdd/Vddq = 2.7V, fast-fast process
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Table 8. Full Strength Driver Characteristics
Pulldown Current (mA) pullup Current (mA)
Voltage
(V)
Typical
Low
Typical
High Minimum Maximum
Typical
Low
Typical
High Minimum Maximum
0.1 6.0 6.8 4.6 9.6 -6.1 -7.6 -4.6 -10.0
0.2 12.2 13.5 9.2 18.2 -12.2 -14.5 -9.2 -20.0
0.3 18.1 20.1 13.8 26.0 -18.1 -21.2 -13.8 -29.8
0.4 24.1 26.6 18.4 33.9 -24.0 -27.7 -18.4 -38.8
0.5 29.8 33.0 23.0 41.8 -29.8 -34.1 -23.0 -46.8
0.6 34.6 39.1 27.7 49.4 -34.3 -40.5 -27.7 -54.4
0.7 39.4 44.2 32.2 56.8 -38.1 -46.9 -32.2 -61.8
0.8 43.7 49.8 36.8 63.2 -41.1 -53.1 -36.0 -69.5
0.9 47.5 55.2 39.6 69.9 -41.8 -59.4 -38.2 -77.3
1.0 51.3 60.3 42.6 76.3 -46.0 -65.5 -38.7 -85.2
1.1 54.1 65.2 44.8 82.5 -47.8 -71.6 -39.0 -93.0
1.2 56.2 69.9 46.2 88.3 -49.2 -77.6 -39.2 -100.6
1.3 57.9 74.2 47.1 93.8 -50.0 -83.6 -39.4 -108.1
1.4 59.3 78.4 47.4 99.1 -50.5 -89.7 -39.6 -115.5
1.5 60.1 82.3 47.7 103.8 -50.7 -95.5 -39.9 -123.0
1.6 60.5 85.9 48.0 108.4 -51.0 -101.3 -40.1 -130.4
1.7 61.0 89.1 48.4 112.1 -51.1 -107.1 -40.2 -136.7
1.8 61.5 92.2 48.9 115.9 -51.3 -112.4 -40.3 -144.2
1.9 62.0 95.3 49.1 119.6 -51.5 -118.7 -40.4 -150.5
2.0 62.5 97.2 49.4 123.3 -51.6 -124.0 -40.5 -156.9
2.1 62.9 99.1 49.6 126.5 -51.8 -129.3 -40.6 -163.2
2.2 63.3 100.9 49.8 129.5 -52.0 -134.6 -40.7 -169.6
2.3 63.8 101.9 49.9 132.4 -52.2 -139.9 -40.8 -176.0
2.4 64.1 102.8 50.0 135.0 -52.3 -145.2 -40.9 -181.3
2.5 64.6 103.8 50.2 137.3 -52.5 -150.5 -41.0 -187.6
2.6 64.8 104.6 50.4 139.2 -52.7 -155.3 -41.1 -192.9
2.7 65.0 105.4 50.5 140.8 -52.8 -160.1 -41.2 -198.2
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Maximum
Typical High
Minumum
Vout(V)
Iout(mA)
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0.0 1.0 2.0
Iout(mA)
Minimum
Typical Low
Typical High
Maximum
0
10
20
30
40
50
60
70
80
90
0.0 1.0 2.0
Iout(mA)
Typical Low
Vout(V)
Pullup Characteristics for Weak Output Driver
Pulldown Characteristics for Weak Output Driver
DDR SDRAMDDR SDRAM 1Gb M-die (x4, x8, x16)
Rev. 0.6 February. 2004
Preliminary
Pulldown Current (mA) pullup Current (mA)
Voltage
(V)
Typical
Low
Typical
High Minimum Maximum
Typical
Low
Typical
High Minimum Maximum
0.1 3.4 3.8 2.6 5.0 -3.5 -4.3 -2.6 -5.0
0.2 6.9 7.6 5.2 9.9 -6.9 -8.2 -5.2 -9.9
0.3 10.3 11.4 7.8 14.6 -10.3 -12.0 -7.8 -14.6
0.4 13.6 15.1 10.4 19.2 -13.6 -15.7 -10.4 -19.2
0.5 16.9 18.7 13.0 23.6 -16.9 -19.3 -13.0 -23.6
0.6 19.6 22.1 15.7 28.0 -19.4 -22.9 -15.7 -28.0
0.7 22.3 25.0 18.2 32.2 -21.5 -26.5 -18.2 -32.2
0.8 24.7 28.2 20.8 35.8 -23.3 -30.1 -20.4 -35.8
0.9 26.9 31.3 22.4 39.5 -24.8 -33.6 -21.6 -39.5
1.0 29.0 34.1 24.1 43.2 -26.0 -37.1 -21.9 -43.2
1.1 30.6 36.9 25.4 46.7 -27.1 -40.3 -22.1 -46.7
1.2 31.8 39.5 26.2 50.0 -27.8 -43.1 -22.2 -50.0
1.3 32.8 42.0 26.6 53.1 -28.3 -45.8 -22.3 -53.1
1.4 33.5 44.4 26.8 56.1 -28.6 -48.4 -22.4 -56.1
1.5 34.0 46.6 27.0 58.7 -28.7 -50.7 -22.6 -58.7
1.6 34.3 48.6 27.2 61.4 -28.9 -52.9 -22.7 -61.4
1.7 34.5 50.5 27.4 63.5 -28.9 -55.0 -22.7 -63.5
1.8 34.8 52.2 27.7 65.6 -29.0 -56.8 -22.8 -65.6
1.9 35.1 53.9 27.8 67.7 -29.2 -58.7 -22.9 -67.7
2.0 35.4 55.0 28.0 69.8 -29.2 -60.0 -22.9 -69.8
2.1 35.6 56.1 28.1 71.6 -29.3 -61.2 -23.0 -71.6
2.2 35.8 57.1 28.2 73.3 -29.5 -62.4 -23.0 -73.3
2.3 36.1 57.7 28.3 74.9 -29.5 -63.1 -23.1 -74.9
2.4 36.3 58.2 28.3 76.4 -29.6 -63.8 -23.2 -76.4
2.5 36.5 58.7 28.4 77.7 -29.7 -64.4 -23.2 -77.7
2.6 36.7 59.2 28.5 78.8 -29.8 -65.1 -23.3 -78.8
2.7 36.8 59.6 28.6 79.7 -29.9 -65.8 -23.3 -79.7
Table 9. Weak Driver Characteristics
