R07DS0135EJ0500 Rev.5.00 Page 1 of 8
Sep 15, 2010
Preliminary Datasheet
CR05AS-8
Thyristor
Low Power Use
Features
IT (AV) : 0.5 A
VDRM : 400 V
IGT : 100 A
Non-Insulated Type
Planar Passivation Type
Surface Mounted type
Outline
RENESAS Package code:
PLZZ0004
C
A-A
(
Package name:
U
PAK
)
2
4
13
RENESAS Package code:
LZZ0004CB-A
(
Package name:
SOT-
2
4
1
3
2, 4
1
3
1. Cathode
2. Anode
3. Gate
4. Anode
EOL PKG
de: de:
PLZPLZ
OT-89OT-89
))
44
OL
O
OL
OL
OL P
O
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Voltage class
Parameter Symbol
8 (Mark CD) Unit
Repetitive peak reverse voltage VRRM 400 V
Non-repetitive peak reverse v oltag e VRSM 500 V
DC reverse voltage VR (DC) 320 V
Repetitive peak off-state voltageNote1 V
DRM 400 V
DC off-state voltageNote1 V
D (DC) 320 V
Parameter Symbol Ratings Unit Conditions
RMS on-state current IT (RMS) 0.79 A
Average on-state current IT (AV) 0.5 A Commercial frequency, sine half wave
180° conduction, Ta = 57°CNote2
Surge on-state current ITSM 10 A 60Hz sine half wave 1 full cycle,
peak value, non-repetitive
I2t for fusing I2t 0.4 A2s Value corresponding to 1 cycl e of half
wave 60Hz, surge on-state current
Peak gate power dissipation PGM 0.1 W
Average gate power dissipation PG (AV) 0.01 W
Peak gate forward voltage VFGM 6 V
Peak gate reverse voltage VRGM 6 V
Peak gate forward current IFGM 0.1 A
Junction temperature Tj – 40 to +125 °C
Storage temperature Tstg – 40 to +125 °C
Mass — 50 mg Typical value
Notes: 1. With gate to cathode resistance RGK = 1 k.
R07DS0135EJ0500
(Previous: REJ03G0348-0400)
Rev.5.00
Sep 15, 2010
CR05AS-8 Preliminary
R07DS0135EJ0500 Rev.5.00 Page 2 of 8
Sep 15, 2010
Electrical Characteristics
Rated value
Parameter Symbol
Min. Typ. Max. Unit Test conditions
Repetitive peak reverse current IRRM — — 0.1 mA Tj = 125°C, VRRM applied
Repetitive peak off-state current IDRM — — 0.1 mA
Tj = 125°C, VDRM applied,
RGK = 1 k
On-state voltage VTM — — 1.9 V
Ta = 25°C, ITM = 1.5 A,
instantaneous value
Gate trigger voltage VGT — — 0.8 V
Tj = 25°C, VD = 6 V,
IT = 0.1 ANote4
Gate non-trigger voltage VGD 0.2 — — V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 k
Gate trigger current IGT 20 — 100Note3 A Tj = 25°C, VD = 6 V,
IT = 0.1 ANote4
Holding current IH — — 3 mA
Tj = 25°C, VD = 12 V,
RGK = 1 k
Thermal resistance Rth (j-a) — — 70 °C/W Junction to ambientNote2
Notes: 2. Soldering with ceramic plate (25 mm 25 mm t0.7 mm).
3. If special values of IGT are required, choose it em E from those listed in the table below if possible.
Item B E
IGT (A) 20 to 50 20 to 100
The above values do not include the current flowing through the 1 k resistance between the gate and
cathode.
4. IGT, VGT measurement circuit.
3V
DC
I
GS
I
GT
6V
DC
60
Ω
V
GT
2
1
T
UT
1
k
Ω
R
GK
A
3
A2
V1
A1
S
witc
h
Switch 1 : I
GT
measurement
Switch 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
CR05AS-8 Preliminary
R07DS0135EJ0500 Rev.5.00 Page 3 of 8
Sep 15, 2010
Performance Curves
Maximum On-State Characteristics
On-State Current (A)
On-State Voltage (V)
Rated Surge On-State Current
Surge On-State Current (A)
Conduction Time (Cycles at 60Hz)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
Time (s)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Voltage (V)
Junction Temperature (°C)
Gate Voltage (V)
Gate Current (mA)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Characteristics
×
100 (%)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
10
0
25710
1
4
2
10
2
4325743
6
8
10
3
1
5
7
9
0
501 423
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
Ta = 25°C
10
2
10
–2
10
0
10
1
10
1
7
5
3
2
10
–1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
–2
23 57 23 57
10
–1
10
2
23 57 23 57
VFGM = 6V
VGT = 0.8V
IGT = 100μA
(Tj = 25°C)
PGM = 0.1W
VGD = 0.2V IFGM = 0.1A
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0160
–40–20 20 80 140120
0.2
0.5
0.9
06040100
60–20–40–6002040 80 100120140
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
2310
0
5710
1
23 5710
2
23 5710
3
10
1
2310
–3
5710
–2
23 5710
–1
23 5710
0
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
25×25×t0.7
Aluminum Board
PG(AV) = 0.01W
Typical Example
Distribution
Typical Example
CR05AS-8 Preliminary
R07DS0135EJ0500 Rev.5.00 Page 4 of 8
Sep 15, 2010
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average Power Dissipation (W)
Average On-State Current (A) Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Ambient Temperature (°C)Ambient Temperature (°C) Ambient Temperature (°C)
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Average Power Dissipation (W)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
1.5
1.0
0.5
00.8
00.20.4 0.6 0.70.10.30.5
θ = 30° 60°120°
90°180°
270°
DC
1.5
1.0
0.5
00.8
00.20.4 0.6 0.70.10.30.5
θ = 30° 60°120°
90°
180°
160
120
60
40
20
140
100
80
00.8
00.20.4 0.6
θ = 30°60°120°
90°180°
160
120
60
40
20
140
100
80
00.8
00.20.4 0.6
θ = 30°
DC
270°60°
1.5
0.5
1.0
00.8
00.20.4 0.6 0.70.10.30.5
θ = 30°60°90°180°
120°
160
120
60
40
20
140
100
80
00.8
00.20.4 0.6
θ = 30°
60°120°
90°180°
θ
360°
Resistive,
inductive loads
θ
360°
Resistive,
inductive loads
Natural convection
25
×
25
×
t0.7
Aluminum Board
25
×
25
×
t0.7
Aluminum Board
25
×
25
×
t0.7
Aluminum Board
θ θ
360°
Resistive loads
θ
360°
Resistive,
inductive loads
θ θ
360°
Resistive loads
Natural convection
θ
360°
Resistive, inductive loads
Natural convection
120°
180°90°
CR05AS-8 Preliminary
R07DS0135EJ0500 Rev.5.00 Page 5 of 8
Sep 15, 2010
Breakover Voltage vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Breakover Voltage (RGK = rkΩ)
Breakover Voltage (RGK = 1kΩ)
Breakover Voltage vs.
Junction Temperature
Junction Temperature (°C)
× 100 (%)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Holding Current vs.
Junction Temperature
Holding Current (mA)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Gate to Cathode Resistance (kΩ)
× 100 (%)
Holding Current (RGK = rkΩ)
Holding Current (RGK = 1kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Voltage (V/μs)
× 100 (%)
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
160
120
60
40
20
140
100
80
0160
–40040 80 120140–20 20 60100
2310
–1
5710
0
23 5710
1
23 5710
2
120
0
80
100
40
60
20
2310
0
5710
1
23 5710
2
23 5710
3
120
0
80
100
40
60
20
# 1
# 2
Typical Example
# 1 IGT(25°C = 10μA)
# 2 IGT(25°C = 66μA)
Tj = 125°C, RGK = 1kΩ
60–20–40–6002040 80 100120140
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
2310
–1
5710
0
23 5710
1
23 5710
2
500
0
200
300
400
100
# 1
# 2
160
120
100
40
60
20
0160
–40–20 20 80 140120
80
140
06040 100
Junction Temperature (°C)
× 100 (%)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
R
GK = 1kΩ
Typical ExampleTypical Example
Tj = 125°C
Distribution
Typical Example
Tj = 25°C
IH (25°C) = 1mA
IGT(25°C) = 25μA
Tj = 25°C
Typical Example
IGT(25°C) IH(1kΩ)
13μA1.6mA
59μA1.8mA
# 1
# 2
Typical Example
CR05AS-8 Preliminary
R07DS0135EJ0500 Rev.5.00 Page 6 of 8
Sep 15, 2010
Gate Trigger Current vs.
Gate Current Pulse Width
× 100 (%)
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Gate Current Pulse Width (μs)
10
2
22310
0
45 710
1
345 710
2
7
5
10
3
4
3
2
7
5
2
4
3
10
1
# 1
# 2
Tj = 25°C
Typical Example
IGT(25°C)
10μA
66μA
# 1
# 2
CR05AS-8 Preliminary
R07DS0135EJ0500 Rev.5.00 Page 7 of 8
Sep 15, 2010
Package Dimensions
4.5 ± 0.1
1.8 Max1.5 ± 0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.8 Min
φ1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Previous Code
PLZZ0004CA-AUPAK / UPAKV MASS[Typ.]
0.050gSC-62RENESAS CodeJEITA Package Code Unit: mm
Package Name
UPAK
SC
-62
0
.4
8g
MA
SS
[Typ.
]
⎯
P
LZZ0004
C
B-A
RENE
S
A
S
C
odeJEITA Package
C
ode Previous
C
ode Unit: mm
4.6Max
0.48Max
0.58Max
3.0
1.5
4.2Ma
2.5
1.6 ± 0.2
0.4
+0.03
–0.05
P
acka
g
e Name
SO
T-
89
EOL PKG
L P
OL
OL
L
OL
OL
L
L
OL
L
OL
L
L
L
K
K
K
PK
P
P
P
PK
PK
PK
PK
P
P
P
P
O
OL
O
O
O
O
K
KG
PK
K
K
OL
OL
OL
OL
L
L
L
L
L
L
O
K
K
K
K
K
K
O
O
O
O
O
O
Max
0
.
8
Min
n
55
±±
0
.1
0.1
1
.5
1.5
±±
0
.
1 0.1
CR05AS-8 Preliminary
R07DS0135EJ0500 Rev.5.00 Page 8 of 8
Sep 15, 2010
Order Code
Lead form Standard packing Quantity Standard order code Standard order
code example
Surface-mounted type Taping 4000 Type name – ET +Direction (1 or 2) + 4 CR05AS-8-ET14
Note : Please confirm the specification about the shipping in det ail.
Notice
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