DATA SH EET
Product specification
Supersedes data of 1999 Nov 02 2000 Apr 03
DISCRETE SEMICONDUCTORS
BFR520T
NPN 9 GHz wideband transistor
M3D173
2000 Apr 03 2
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) package.
APPLICATIONS
Wideband applications such as
satellite TV tuners, cellular phones,
cordless phones, pag ers etc ., with
signal frequencies up to 2 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
PINNING
PIN DESCRIPTION
1base
2emitter
3 collector
lfpage
12
3
MBK090Top view
Fig.1 SOT416.
Marking code: N2.
QUICK REFERENCE DATA
Note
1. Tsis the temperature at the sold ering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maxi mum Sys tem (IEC 60134).
Note
1. Ts is the temperature at the sold ering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base volt a ge open emitter 20 V
VCES collector-emitter voltage RBE =0 15 V
ICDC collector current 70 mA
Ptot total power dissipation up to Ts=75C; note 1 150 mW
hFE DC current gain IC=20mA; V
CE =6V; T
j=25C 60 120 250
fTtransition frequency IC=20mA; V
CE = 6 V; f = 1 GHz;
Tamb =25C9GHz
GUM maximum unilateral power
gain IC=20mA; V
CE = 6 V; f = 900 MHz;
Tamb =25C15 dB
F noise figure IC=5mA; V
CE = 6 V; f = 900 MHz;
Tamb =25C1.1 1.6 dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base volt a ge open emitter 20 V
VCES collector-emitter voltage RBE =0 15 V
VEBO emitter-base voltage open collector 2.5 V
ICDC collector current 70 mA
Ptot total power dissipation up to Ts=75C; note 1 150 mW
Tstg storage temperature 65 +150 C
Tjjunction temperature 150 C
2000 Apr 03 3
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
THERMAL CHARACTE RISTI CS
CHARACTERISTICS
Tj=25C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
2. IC=20mA; V
CE =6V; R
L=50; f = 900 MHz; Tamb =25C; fp=900 MHz; f
q= 902 MHz; measured at
f(2pq) = 898 MHz and at f(2qp) =904MHz.
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE=0; V
CE =6V 50 nA
hFE DC current gain IC=20mA; V
CE =6V 60 120 250
Ceemitter capacit a nce IC=i
c=0; V
EB =0.5V; f=1MHz 1pF
Cccollector capacitance IE=i
e=0; V
CB =6V; f= 1MHz 0.5 pF
Cre feedback capacitance IC=0; V
CB =6V; f=1MHz 0.4 pF
fTtransition frequency IC=20mA; V
CE = 6 V; f = 1 GHz;
Tamb =25C9GHz
GUM maximum unilateral power
gain; note 1 IC=20mA; V
CE = 6 V; f = 900 MHz;
Tamb =25C15 dB
IC=20mA; V
CE = 6 V; f = 2 GHz;
Tamb =25C9dB
s212insertion power gain IC=20mA; V
CE = 6 V; f = 900 MHz;
Tamb =25C13 14 dB
F noise figure s=opt;I
C=5mA; V
CE =6V;
f=900MHz; T
amb =25C1.1 1.6 dB
s=opt;I
C=20mA; V
CE =6V;
f=900MHz; T
amb =25C1.6 2.1 dB
s=opt;I
C=5mA; V
CE =6V;
f=2GHz; T
amb =25C1.9 dB
PL1 output power at 1 dB gain
compression IC=20mA; V
CE =6V; R
L=50;
f=900MHz; T
amb =25C17 dBm
ITO third order inte rc ept point note 2 26 dBm
GUM 10 log s21 2
1s
11 2
–1s
22 2
–
-------------------------------------------------------- dB=
2000 Apr 03 4
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
0 50 100 200
100
0
MGU068
150
Ptot
(mW)
Ts (°C)
150
200
50
Fig.2 Power derating curve.
handbook, halfpage
MRC028
0
50
100
150
200
10
−1
10
−2
11010
2
IC(mA)
hFE
Fig.3 DC current gain as a fu nc tion of collector
current; ty pical values.
VCE =6V; T
j=25C.
handbook, halfpage MRC021
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0246810
V (V)
CB
Cre
(pF)
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical valu es.
IC=0; f=1MHz.
handbook, halfpage
MRC022
0
2
4
6
8
10
12
1 10 100
fT
(GHz)
IC(mA)
3 V
= 8 V
CE
V
Fig.5 Transition frequency as a function of
collector current; typical values.
f=1GHz; T
amb =25C.
2000 Apr 03 5
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
handbook, halfpage
MRC027
10
12
14
16
18
20
0102030
GUM
(dB)
IC(mA)
3 V
= 6 V
CE
V
Fig.6 Maximum unilateral power gain as a
function of collector current; typical values.
VCE = 6 V; f = 900 MHz; Tamb =25C.
GUM = maximum unilatera l powe r gain .
MSG = maximum stable g ain.
Gmax = maximum available gain.
handbook, halfpage MRC026
0
5
10
15
20
25
0 102030
MSG
GUM
Gmax
gain
(dB)
IC(mA)
Fig.7 Gain as a function o f c ollec t or current;
typical values.
VCE =6V; f=2GHz; T
amb =25C.
GUM = maximum unilatera l powe r gain .
MSG = maximum stable g ain.
Gmax = maximum available gain.
handbook, halfpage
MRC024
0
10
20
30
40
50
10
−1
10
−2
110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
Fig.8 Gain as a functio n of frequency;
typical values.
IC=5mA; V
CE =6V; T
amb =25C.
GUM = maximum unilatera l powe r gain .
MSG = maximum stable g ain.
Gmax = maximum available gain.
handbook, halfpage
MRC025
0
10
20
30
40
50
10
−1
10
−2
110
f (GHz)
MSG
GUM
Gmax
gain
(dB)
Fig.9 Gain as a functio n of frequency;
typical values.
IC=20mA; V
CE =6V; T
amb =25C.
GUM = maximum unilatera l powe r gain .
MSG = maximum stable g ain.
Gmax = maximum available gain.
2000 Apr 03 6
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
handbook, halfpage MRC029
0
1
2
3
4
11010
2
IC(mA)
F
(dB)
900 MHz
500 MHz
f = 2 GHz
Fig.10 Minimum noise figure as a function of
collector current; typical values.
VCE =6V; T
amb =25C.
handbook, halfpage
MRC023
0
1
2
3
4
10−1110
F
(dB)
5 mA
I = 20 mA
C
f (GHz)
Fig.11 Minimum noise figure as a function of
frequency; typical values.
VCE =6V; T
amb =25C.
2000 Apr 03 7
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
handbook, full pagewidth
MRC077
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
stability
circle
pot. unst.
region
F = 3 dB
F = 2 dB
F = 1.5 dB
ΓOPT
Fmin = 1. 1 dB
Fig.12 Common emitter noise figure circles; typ ica l valu es .
IC=5mA; V
CE =6V;
f=900MHz; Z
o=50.
handbook, full pagewidth
MRC078
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
ΓMS
Gmax = 9.1 dB
G = 7 dB
G = 8 dB
G = 8,5 dB
ΓOPT
Fmin = 1. 9 dB
F = 3 dB
F = 2.5 dB
F = 2 dB
Fig.13 Common emitter noise figure circles; typ ica l valu es .
IC=5mA; V
CE =6V;
f=2GHz; Z
o=50.
2000 Apr 03 8
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
handbook, full pagewidth
MRC066
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
Fig.14 Common emitter input reflection coefficient (s11); typical values.
IC=20mA; V
CE =6V;
Zo=50.
handbook, full pagewidth
MRC067
50 40 30 20 10
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
Fig.15 Common emitter forward transmission coefficient (s21); typical values.
IC=20mA; V
CE =6V.
2000 Apr 03 9
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
handbook, full pagewidth
MRC060
0.5 0.4 0.3 0.2 0.1
180°
−90°
−135°−45°
0°
45°
90°
135°
3 GHz
40 MHz
Fig.16 Common emitter reverse transmission coefficient (s12); typical values.
IC=20mA; V
CE =6V.
handbook, full pagewidth
MRC061
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
Fig.17 Common emitter output reflection coefficient (s22); typical values.
IC=20mA; V
CE =6V;
Zo=50.
2000 Apr 03 10
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
PACKAGE OUTLINE
UNIT A1
max bpcDEe1HELpQw
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 0.1 0.30
0.15 0.25
0.10 1.8
1.4 0.9
0.7 0.5
e
11.75
1.45 0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.23
0.13
SOT416 SC-75
wM
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
EAB
B
vMA
0 0.5 1 mm
scale
A
0.95
0.60
c
X
12
3
Plastic surface-mounted package; 3 leads SOT416
04-11-04
06-03-16
2000 Apr 03 11
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
DATA SHEET STATUS
Notes
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2. The product status of device(s) described in this documen t may have changed since this document wa s published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This doc ument contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.
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specification of the product as agreed between NXP
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Semiconductors and cus to mer have explicitly agreed
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2000 Apr 03 12
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFR520T
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to any default, damage, cost s or problem which is based
on any weakness or default in the customer’s applications
or products, or the applic ation or use by customer’s third
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respect.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ra tings only and
(proper) operat ion of the device at these or any other
conditions above those given in the Recommende d
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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Printed in The Netherlands R77/02/pp13 Date of release: 2000 Apr 03
