2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 1 March 8, 2000-01
DESCRIPTION
The ILD/Q3 are optically coupled isolated pairs employing GaAs infra-
red LEDs and silicon NPN phototransistor. Signal information, including
a DC level, can be transmitted by the drive while maintaining a high
degree of electrical isolation between input and output. The ILD/Q3 are
especially designed for driving medium-speed logic and can be used
to eliminate troublesome ground loop and noise problems. Also these
couplers can be used to replace relays and transformers in many digi-
tal interface applications such as CRT modulation. The ILD3 has two
isolated channels in a single DIP package and the ILQ3 has four iso-
lated channels per package.
See Appnote 45,
“How to Use Optocoupler Normalized Curves”
.
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4°
.100 (2.54)typ.
10°
typ.
3°–9°
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8 7 6 5 4 3 2 1
9 10 11 12 13 14 15 16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.100 (2.54) typ.
10°
3°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56) .008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4321
.031 (0.79)
.050 (1.27)
5678
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Emitter
Collector
Collector
Emitter
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Anode
Cathode
Cathode
Anode
1
2
3
4
8
7
6
5
Emitter
Collector
Collector
Emitter
Anode
Cathode
Cathode
Anode
Dimensions in Inches (mm)
Dual Channel
Quad Channel
FEATURES
• Current Transfer Ratio at
I
F
=1.6 mA, 300% Min.
• High Collector-Emitter Voltage
•BV
CEO
=50 V
• Field-Effect Stable by TRansparent IOn Shield
(TRIOS)
• Double Molded Package Offers Isolation Test
Voltage 5300 V
RMS
, 1.0 sec.
• Underwriters Lab File #E52744
Maximum Ratings
(Each Channel)
Emitter
Reverse Voltage ...................................................6.0 V
Continuous Forward Current ............................. 60 mA
Surge Current...................................................... 2.5 A
Power Dissipation............................................100 mW
Derate Linearly from 25
°
C...........................1.3 mW/
°
C
Detector
Collector-Emitter Reverse Voltage.........................50 V
Collector Current ............................................... 50 mA
Collector Current (t<1.0 ms)............................ 400 mA
Total Power Dissipation ...................................200 mW
Derate Linearly from 25
°
C...........................2.6 mW/
°
C
Package
Isolation Test Voltage (between emitter
and detector, refer to standard climate
23
°
C/50% RH, DIN50014) t=1 sec. ........ 5300 V
RMS
Creepage ......................................................
≥
7.0 mm
Clearance......................................................
≥
7.0 mm
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C............................... R
IO
=10
12
Ω
V
IO
=500 V,
T
A
=100
°
C............................. R
IO
=10
11
Ω
Power Dissipation............................................250 mW
Derate Linearly from 25
°
C...........................3.3 mW/
°
C
Storage Temperature Range .................–40 to +150
°
C
Operating Temperature Range..............–40 to +100
°
C
Junction Temperature.........................................100
°
C
Soldering Temperature,
2.0 mm from case bottom...............................260
°
C
DUAL CHANNEL
ILD3
QUAD CHANNEL
ILQ3
Phototransistor
Optocoupler
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA ILD/Q3
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178 2 March 8, 2000-01
Characteristics
Emitter (IR GaAs) Symbol Min. Typ. Max. Unit Test Condition
Forward Voltage
V
F
—1.25 1.65 V
I
F
=60 mA
Reverse Current
I
R
—0.01 10
µ
A
V
R
=6.0 V
Capacitance
C
0
—25 —pF
V
R
=0 V, f=1.0 MHz
Thermal Resistance, Junction to Lead
R
THJL
—750 —K/W —
Detector
Collector-Emitter Leakage Current
I
CEO
—5.0 70 nA
V
CE
=15 V
Capacitance
C
CE
—6.8 —pF
V
CE
=5.0 V, f=1.0 MHz
Thermal Resistance, Junction to Lead
R
THJL
—500 —K/W —
Package Transfer Characteristics (Each Channel)
Saturated Current Transfer Ratio, ILD/Q3-1 CTR
SAT
300 ——%
I
F
=1.6 mA,
V
CE
=0.4 V
Saturated Current Transfer Ratio, ILD/Q3-2 CTR
SAT
100 ——%
I
F
=1.0 mA,
V
CE
=0.4 V
Common Mode Rejection Output High CMH —5000 —V/
µ
sV
CM
=50 V
P-P
,
R
L
=10 k
Ω
,
I
F
=0 mA
Common Mode Rejection Output Low CML —5000 —V/
µ
sV
CM
=50 V
P-P
,
R
L
=10 k
Ω
,
I
F
=0 mA
Common Mode Coupling Capacitance
C
CM
—0.01 —pF —
Package Capacitance
C
IO
—0.8 —pF
V
IO
=0 V, f=1.0 MHz
