FW342
No.7912-1/6
Features
•For motor drives, inverters.
•Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
•High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions N-channel P-channel Unit
Drain-to-Source Voltage VDSS 30 --30 V
Gate-to-Source Voltage VGSS ±20 ±20 V
Drain Current (DC) ID6 --5 A
Drain Current (PW≤10s) IDduty cycle≤1% 7 --5.5 A
Drain Current (PW≤100ms) IDduty cycle≤1% 10 --9 A
Drain Current (PW≤10µs) IDP duty cycle≤1% 24 --20 A
Allowable Power Dissipation PDMounted on a ceramic board 1.8 W
(1500mm2✕0.8mm)1unit, PW≤10s
Total Dissipation PTMounted on a ceramic board 2.2 W
(1500mm2✕0.8mm), PW≤10s
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
[N-channel]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=6A 4.6 7.8 S
RDS(on)1 ID=6A, VGS=10V 25 33 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=3A, VGS=4.5V 35 49 mΩ
RDS(on)3 ID=3A, VGS=4V 37 52 mΩ
Marking : W342 Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7912
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2004 TS IM TA-101197
FW342 N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
FW342
No.7912-2/6
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=10V, f=1MHz 850 pF
Output Capacitance Coss VDS=10V, f=1MHz 170 pF
Reverse T ransfer Capacitance Crss VDS=10V, f=1MHz 125 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12.5 ns
Rise T ime trSee specified Test Circuit. 108 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 77 ns
Fall T ime tfSee specified Test Circuit. 61 ns
Total Gate Charge Qg VDS=10V, VGS=10V, ID=6A 16 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=6A 3.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=6A 2.4 nC
Diode Forward Voltage VSD IS=6A, VGS=0 0.84 1.2 V
[P-channel]
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V
Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward T ransfer Admittance yfsVDS=--10V, ID=--5A 4.5 7.5 S
RDS(on)1 ID=--5A, VGS=--10V 41 53 mΩ
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=--3A, VGS=--4.5V 62 87 mΩ
RDS(on)3 ID=--3A, VGS=--4V 70 98 mΩ
Input Capacitance Ciss VDS=--10V, f=1MHz 1000 pF
Output Capacitance Coss VDS=--10V, f=1MHz 195 pF
Reverse T ransfer Capacitance Crss VDS=--10V, f=1MHz 150 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns
Rise T ime trSee specified Test Circuit. 82 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 87 ns
Fall T ime tfSee specified Test Circuit. 55 ns
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--5A 16.5 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--5A 2.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--5A 2.5 nC
Diode Forward Voltage VSD IS=--5A, VGS=0 --0.85 --1.5 V
Package Dimensions Electrical Connection
unit : mm
2129
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
14
58
4.4
0.3
6.0
0.2
5.0
0.595 1.27
1.5
0.1 1.8max
0.43
8765
1234
Top view
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
FW342
No.7912-3/6
Switching Time Test Circuit
[N-channel] [P-channel]
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=6A
RL=2.5Ω
VDD=15V
VOUT
FW342
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --5A
RL=3Ω
VDD= --15V
VOUT
FW342
VIN
0V
--10V
VIN
02468
100
0
10
20
30
40
50
60
70
80
90
10
10
20
30
40
50
60
70
1210 14 16
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
IT07382 Ambient Temperature, Ta -- °C
RDS(on) -- Ta
IT07383
--60 --40 --20 0 20 40 60 80 100 120 160140
0
0
6.0
0.2 0.30.1
1.0
2.0
3.0
4.0
5.0
0
6.0
1.0
2.0
3.0
4.0
5.0
1.00.7 0.8 0.90.6
Drain-to-Source Voltage, VDS -- V
ID -- VDS
IT07380
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V
ID -- VGS
IT07381
0.4 0.5
[Nch]
[Nch]
[Nch]
[Nch]
VGS=2.5V
3.5V
4.5V
4.0V
3.0V
10.0V
6.0V
VDS=10V
Ta=
75°C
--25°C
25
°
C
Ta=25°C
ID=6A
ID=3A
ID=3A, VGS=4V
ID=3A, VGS=4.5V
ID=6A, VGS=10V
Drain Current, ID -- A
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
FW342
No.7912-4/6
0
0
8
7
9
182 4 6 8 10 12 14 16
10
2
1
4
3
6
5
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT07388
[Nch]
0 --0.2 --0.3--0.1
0
--2.0
--4.0
--5.0
--3.0
--1.0
0
--3
--2
--4
--5
--1
--1.0--0.8 --0.9--0.6 --0.7
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
IT07390
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
IT07391
--0.4 --0.5
[Pch]
[Pch]
[Nch]
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
5
7
10
2
5
3
23 57 23 57
0.1 1.0 10 23 5
IT07389
03010 15 20 255
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
IT07387
100
2
0.1 1.0
23 57 10
2233
57
2
10
3
3
5
5
2
7
3
5
7
7
5
1000
3
2
100
3
5
2
7
7
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
IT07386
Crss
Coss
Ciss
[Nch]
[Nch]
VDD=15V
VGS=10V
td(off)
tf
td(on)
tr
f=1MHz
VDS=10V
ID=6A
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm
2
✕0.8mm) 1unit
DC operation
100ms
10ms
10s
1ms
ID=6A
IDP=24A
Operation in this area
is limited by RDS(on).
≤10µs
100µs
VGS= --2.5V
--3.0V
--3.5V
--4.0V
--4.5V
--6.0V
--10.0V
VDS= --10V
Ta=75°C
25
°
C
--25
°
C
IT07385
Diode Forward Voltage, VSD -- V
IF -- VSD
Drain Current, ID -- A
IT07384
0.1
1.0
1.0
2 3 57 2 3 5710
7
5
3
2
5
7
3
10
y
fs -- ID
0.6 0.80.4 1.0 1.20.20
0.01
10
1.0
0.1
7
5
3
2
7
5
3
2
7
5
3
2
[Nch]
[Nch]
VDS=10V
Ta=
25
°
C
--25°C
75°C
--25°C
25°C
Ta=75°C
VGS=0
Forward T ransfer Admittance,
y
fs -- S
Forward Current, IF -- A
FW342
No.7912-5/6
--15 --20--10 --25 --30--50
5
7
1000
100
7
5
3
2
2
3
3
5
3
100
10
7
7
5
3
2
2
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Ciss, Coss, Crss -- pF
IT07397
--0.1 --1.0
23 57 --10
23 57
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
IT07396
[Pch]
[Pch]
A S O
Drain-to-Source Voltage, VDS -- V
--0.01
2
3
5
7
--0.1
2
3
5
7
--1.0
2
3
5
7
--10
2
3
5
23 57 23 57
--0.1 --1.0 --10 23 5
IT07399
0
--8
--7
--9
01810 12 14 164286
--10
--2
--1
--4
--3
--6
--5
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT07398
[Pch]
[Pch]
IT07395
Diode Forward Voltage, VSD -- V
IF -- VSD
Drain Current, ID -- A
IT07394
--0.1 --1.0
23 57 23 57
--10
1.0
10
7
5
3
2
5
7
Forward T ransfer Admittance,
y
fs -- S
y
fs -- ID
--0.6 --0.8--0.4 --1.0 --1.2--0.2
Forward Current, IF -- A
[Pch]
[Pch]
--0.01
--10
--1.0
--0.1
7
5
3
2
7
5
3
2
7
5
3
2
VDS= --10V
25
°
C
Ta= --25°C
75
°
C
VGS=0
Ta=75°C
25°C
--25°C
VDD= --15V
VGS= --10V
td(off)
tf
tr
td(on)
f=1MHz
Ciss
Coss
Crss
VDS= --10V
ID= --5A
DC operation
≤10µs
100µs
100ms
10ms
1ms
10s
IDP= --20A
ID= --5A
Operation in this area
is limited by RDS(on).
Ta=25°C
Single pulse
Mounted on a ceramic board (1500mm
2
✕0.8mm) 1unit
0 --2 --4 --6 --8
20
40
60
80
100
120
140
0--12--10 --14 --16
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
IT07392
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
IT07393
--60 --40 --20 0 20 40 60 80 100 120 160140
40
20
60
80
100
140
120
0
[Pch]
[Pch]
Ta=25°C
ID= --5A
ID= --3A
ID=
--3
A, VGS=
--
4V
ID=
--3
A, VGS=
--
4.5V
ID=
--5
A, VGS=
--
10V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain Current, ID -- A
FW342
No.7912-6/6
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
IT07400
0
00.40.2 0.6 0.8 1.0 1.2 1.4 1.6
1.8
1.6
1.4
1.2
1.0
0.6
0.4
0.2
0.8
2.2
2.0
1.8 2.0 2.2
Allowable Power Dissipation(FET 2), PD -- W
PD(FET 1) -- PD(FET 2)
Allowable Power Dissipation(FET 1), PD -- W
[Nch, Pch] [Nch, Pch]
0
020 40 60 80 100 120
1.5
1.8
1.0
0.5
2.5
2.0
2.2
140 160
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT07401
1unit
Mounted on a ceramic board (1500mm
2
✕0.8mm),
PW≤10s
Mounted on a ceramic board (1500mm
2
✕0.8mm),
PW
≤
10s
Total dissipation
Note on usage : Since the FW342 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
