A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
NONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 50 mA 20 V
BVCER IC = 5.0 mA RBE = 10 Ω 40 V
BVEBO IC = 100 µA 3.5 V
ICEX VCE = 40 V VBE = -1.5 V 0.1 mA
IEBO VEB = 20 V 0.1 mA
hFE VCE = 5.0 V IC = 100 mA
IC = 380 mA 10
5.0 200 ---
VCE(SAT) IC = 100 mA IB = 20 mA 0.5 V
ft VCE = 15 V IC = 50 mA f = 200 MHz 500 MHz
COB VCB = 12 V f = 1.0 MHz 4.0 pF
Pin
η
ηη
η VCC = 12 V f = 175 MHz
Pout = 1.0 W
35 75 mW
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N4427
PACKAGE STYLE TO-39
1 = EMITTER 2 = BASE
3 = COLLECTOR
DESCRIPTION:
The ASI 2N4427 is a High Freq uency
Transist or Designed for Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
IC 400 mA
VCE 20 V
PDISS 3.5 W @ T C = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
θ
θθ
θJC 50 °C/W
