IPD30N10S3L-34
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25°C, VGS=10V 30 A
TC=100°C, VGS=10V1) 20
Pulsed drain current1) ID,pulse TC=25°C 120
Avalanche energy, single pulse1) EAS ID=15A 138 mJ
Avalanche current, single pulse IAS 30 A
Gate source voltage2) VGS ±20 V
Power dissipation Ptot TC=25°C 57 W
Operating and storage temperature Tj,Tstg -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
VDS 100
V
RDS(on),max 31 mW
ID30 A
Product Summary
Type Package Marking
IPD30N10S3L-34 PG-TO252-3-11 3N10L34
PG-TO252-3-11
Rev. 1.1 page 1 2011-10-06
IPD30N10S3L-34
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics1)
Thermal resistance, junction - case RthJC - - 2.6 K/W
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2cooling area3) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID= 1mA 100 - - V
Gate threshold voltage VGS(th) VDS=VGS,ID=29µA 1.2 1.7 2.4
Zero gate voltage drain current IDSS VDS=80V, VGS=0V,
Tj=25°C - 0.01 0.1 µA
VDS=80V, VGS=0V,
Tj=125°C1) - 1 10
Gate-source leakage current IGSS VGS=16V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=4.5V, ID=30A - 32.2 41.8 mW
VGS=10 V, ID=30 A - 25.8 31.0
Values
Rev. 1.1 page 2 2011-10-06
IPD30N10S3L-34
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
1)
Input capacitance Ciss - 1520 1976 pF
Output capacitance Coss - 380 494
Reverse transfer capacitance Crss - 45 68
Turn-on delay time td(on) - 6 - ns
Rise time tr- 4 -
Turn-off delay time td(off) - 18 -
Fall time tf- 3 -
Gate Charge Characteristics
1)
Gate to source charge Qgs - 5 7 nC
Gate to drain charge Qgd - 4 6
Gate charge total Qg- 24 31
Gate plateau voltage Vplateau - 3.7 - V
Reverse Diode
Diode continous forward current1) IS- - 30 A
Diode pulse current1) IS,pulse - - 120
Diode forward voltage VSD VGS=0V, IF=30A,
Tj=25°C 0.6 1 1.2 V
Reverse recovery time1) trr VR=50V, IF=IS,
diF/dt=100A/µs - 72 - ns
Reverse recovery charge1) Qrr - 150 - nC
1) Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) Qualified with VGS = +20/-5V.
TC=25°C
Values
VGS=0V, VDS=25V,
f=1MHz
VDD=20V, VGS=10V,
ID=30A, RG=3.5W
VDD=80V, ID=30A,
VGS=0 to 10V
Rev. 1.1 page 3 2011-10-06
IPD30N10S3L-34
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 6 V ID= f(TC); VGS ≥ 6 V
3 Safe operating area 4 Max. transient thermal impedance
ID= f(VDS); TC= 25 °C; D= 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
VDS [V]
ID[A]
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
101
100
10-1
10-2
10-3
tp[s]
ZthJC [K/W]
0
10
20
30
40
50
60
0 50 100 150 200
TC[°C]
Ptot [W]
0
10
20
30
0 50 100 150 200
TC[°C]
ID[A]
Rev. 1.1 page 4 2011-10-06
IPD30N10S3L-34
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID= f(VDS); Tj= 25 °C RDS(on) = f(ID); Tj= 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID= f(VGS); VDS = 6V RDS(on) = f(Tj); ID= 30 A; VGS = 10 V
parameter: Tj
10
20
30
40
50
60
-60 -20 20 60 100 140 180
Tj[°C]
RDS(on) [mW]
3 V
3.5 V
4 V
4.5 V
5 V
10 V
0
40
80
120
0123456
VDS [V]
ID[A]
3 V 3.5 V 4 V
4.5 V
5 V
10 V
20
30
40
50
60
70
80
0 20 40 60
ID[A]
RDS(on) [mW]
-55 °C
25 °C
175 °C
0
20
40
60
12345
VGS [V]
ID[A]
Rev. 1.1 page 5 2011-10-06
IPD30N10S3L-34
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS =VDS C= f(VDS); VGS = 0 V; f= 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Typ. avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF[A]
30 µA
150 µA
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj[°C]
VGS(th) [V]
Ciss
Coss
Crss
102
103
104
0 5 10 15 20 25 30
VDS [V]
C[pF]
101
25 °C
100 °C
150 °C
0.1
1
10
100
0.1 1 10 100 1000
tAV [µs]
IAV [A]
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF[A]
Rev. 1.1 page 6 2011-10-06
IPD30N10S3L-34
13 Typical avalanche energy 14 Typ. drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID= 1 mA
parameter: ID
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID= 30 A pulsed
parameter: VDD
VGS
Qgate
Vgs(th)
Qg(th)
Qgs Qgd
Qsw
Qg
90
95
100
105
110
115
-55 -15 25 65 105 145
Tj[°C]
VBR(DSS) [V]
20 V 80 V
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25
Qgate [nC]
VGS [V]
30 A
15 A
7.5 A
0
50
100
150
200
250
300
25 75 125 175
Tj[°C]
EAS [mJ]
Rev. 1.1 page 7 2011-10-06
IPD30N10S3L-34
Published by
Infineon Technologies AG
©
Infineon Technologies AG 2008
All Rights Reserved.
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or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (
www.infineon.com
).
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on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.1 page 8 2011-10-06
IPD30N10S3L-34
Revision History
Version
1.1
1.1
Changes
Page 1: VGS changed from ±16V to
±20V
Page 3: Footnote 2) added
Date
08.04.2008
08.04.2008
Rev. 1.1 page 9 2011-10-06