CYStech Electronics Corp.
Spec. No. : C335SG
Issued Date : 2003.06.10
Revised Date :
Page No. : 1/4
BAS21SG CYStek Product Specification
High voltage switching diode
BAS21SG
Description
High voltage switching diode encapsulated in a SOD-323 small plastic SMD package.
Features
•Fast switching speed
•Low forward voltage drop
•Small plastic SMD package
Mechanical Data
• Case: Molded Plastic, JEDEC SOD-323.
• Terminals: Solder plated, solderable per MIL-STD-750 Method 2026
• Polarity: Indicated by cathode band.
• Mounting Position : Any.
• Weight: 0.0045 gram, 0.000159 ounce
Symbol Outline
SOD-323
CYStech Electronics Corp.
Spec. No. : C335SG
Issued Date : 2003.06.10
Revised Date :
Page No. : 2/4
BAS21SG CYStek Product Specification
Absolute Maximum Ratings(Ta=25℃, unless otherwise specified)
• Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -55~+150 °C
Junction Temperature Tj ............................................................................................................. +150 °C
• Maximum Power Dissipation
Total Power Dissipation Ptot (Note)........................................................................................... 200 mW
Derate above 25℃ ……………………………………………………………………….. 1.57mW/℃
• Maximum Voltages and Currents
Continuous Reverse Voltage VR…………………………………………………………………… 250V
Continuous Forward Current IF (Note)…………………………………………………………… 200 mA
Peak Repetitive Forward Current IFRM (Note)………..………………………………………….625 mA
• Thermal Resistance, Junction to Ambient Air RθJA……………………………………….…….635℃/W
Note : Parts mounted on FR-5 board with minimum pad.
Characteristics (Ta=25°C)
Characteristic Symbol Condition Min. Max. Unit
Reverse Breakdown Voltage VBR I
R=100µA 250 - V
VF(1) IF=100mA - 1 V
Forward Voltage (Note) VF(2) IF=200mA - 1.25 V
IR(1) VR=200V,Tj=25℃ - 100 nA
Reverse Leakage Current (Note) IR(2) VR=200V,Tj=150℃ 100 µA
Diode Capacitance CD V
R=0V, f=1MHz - 5 pF
Reverse Recovery Time trr IF=IR=30mA RL=100Ω
measured at IR=3mA - 50 ns
Notes: Pulse test, tp=380µs, duty cycle<2%.
CYStech Electronics Corp.
Spec. No. : C335SG
Issued Date : 2003.06.10
Revised Date :
Page No. : 3/4
BAS21SG CYStek Product Specification
Characteristic Curves
Forward Characteristics
0.01
0.1
1
10
100
1000
012
Instantaneous Forward Voltage---VF(V)
Instantaneous Forward Current---I F(mA)
Reverse Leakage Current vs Junction Temperature
0.01
0.1
1
10
100
0 100 200
Junction Temperature---Tj(℃)
Reverse Leakage Current---I R(μA)
Power Derating Curve
0
50
100
150
200
250
0 50 100 150 200
Ambient Temperature---TA(℃)
Power Dissipation---PD(mW)
CYStech Electronics Corp.
Spec. No. : C335SG
Issued Date : 2003.06.10
Revised Date :
Page No. : 4/4
BAS21SG CYStek Product Specification
SOD-323 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
A 0.0630 0.0709 1.60 1.80 E 0.0060 - 0.15 -
B 0.0453 0.0531 1.15 1.35 H 0.0000 0.0040 0.00 0.10
C 0.0315 0.0394 0.80 1.00 J 0.0035 0.0070 0.089 0.177
D 0.0098 0.0157 0.25 0.40 K 0.0906 0.1063 2.30 2.70
Notes: 1.Controlling dimension : millimeters.
2.Lead thickness specified per L/F drawing with solder plating.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
D
A
HJ
K
C
E
B
12
Style: Pin 1.Cathode 2.Anode
2-Lead SOD-323 Plastic
Surface Mounted Package
CYStek Package Code: SG
Marking:
5 H
JS
