Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS -140V
▼ Simple Drive Requirement RDS(ON) 180mΩ
▼ Fast Switching Characteristic ID-15A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.4 ℃/W
Rthj-a 62.5 ℃/W
Data and specifications subject to change without notice
Total Power Dissipation
Storage Temperature Range
AP15P15GH-HF
Rating
-140
+20
-15
Halogen-Free Product
-60
1
89.2
-55 to 150
200909141
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V -9.7
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
-55 to 150
Parameter
Operating Junction Temperature Range
Thermal Data
Pulsed Drain Current1
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GDSTO-252(H)
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
AP15P15GH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-1mA -140 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-12A - - 180 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-12A - 12 - S
IDSS Drain-Source Leakage Current VDS=-120V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-12A - 55 90 nC
Qgs Gate-Source Charge VDS=-80V - 8.2 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-10V - 16.6 - nC
td(on) Turn-on Delay Time2VDS=-50V - 11 - ns
trRise Time ID=-12A - 26 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 67 - ns
tfFall Time RD=4.2Ω-60-ns
Ciss Input Capacitance VGS=0V - 2850 4560 pF
Coss Output Capacitance VDS=-25V - 150 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 100 - pF
RgGate Resistance f=1.0MHz - 6.6 10 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-12A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-12A, VGS=0V, - 75 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 250 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
3.Surface mounted on 1 in2 copper pad of FR4 board
A
P15P15GH-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
130
140
150
160
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=-8A
TC=25
℃
0
10
20
30
40
50
0 4 8 12 16 20 24
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25oC - 10V
-7.0 V
-6.0 V
-5.0 V
VG= - 4.0 V
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID= -12A
VG= -10V
0
2
4
6
8
10
12
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
0.0
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
10
20
30
40
0 4 8 12162024
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
T
C
=150 o
C
-10V
-7.0V
-6.0V
-5.0V
VG= -4.0V
AP15P15GH-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Typical Power Dissipation Fig 12. Gate Charge Waveform
4
Q
VG
-10V
QGS QGD
QG
Charge
0
3
6
9
12
15
0 20406080
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
VDS = -80V
ID= -18A
0
1000
2000
3000
4000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
0.1 1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
Operation in this area
limited by RDS(ON)
0
20
40
60
80
100
0 50 100 150
TC , Case Temperature ( oC )
PD (W)
