
B
BR
RI
IG
GH
HT
T
L
LE
ED
D
E
EL
LE
EC
CT
TR
RO
ON
NI
IC
CS
S
C
CO
OR
RP
P.
.
B
BL
L-
-C
C2
29
9C
C/
/G
GW
WE
EG
GW
W-
-3
34
4N
N-
-1
1-
-7
74
4H
H
Ver.1.0 Page: 1 of 2
SINCE 1981
0(.197)
2.54(.10)NOM.
6.1(.240)
9.7(.382)
0.5(.02)
SQ.TYP
3.3(.130)
12.7(.50)
8.1(.319)
5.5(.216)
BL-BEG274N
90 5
BL-B2234NCathode
BL-BEG274N
11.0(.4334.3(.169)
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25mm (0.01”) unless otherwise specified.
3. Lead spacing is measured where the leads emerge from
the package.
4. Specifications are subject to change without notice.
● Features: ●Package dimensions
1. Chip material: GaAsP/GaP (Hi-Eff Red)
and GaP/GaP (Green)
2. Emitted color : Hi-Eff Red and Green
3. Lens Appearance : White Diffused
4. Designed for ease in circuit board assembly.
5. Black case enhance contrast ratio.
6. Solid state light source.
7. Reliable and rugged.
● Applications:
1. TV set
2. Monitor
3. Telephone
4. Computer
5. Circuit board
● Absolute Maximum Ratings(Ta=25℃)
Parameter Symbol Hi-Eff Red Green Unit
Power Dissipation Pd 80 80 mW
Forward Current IF 30 30 mA
Peak Forward Current*1 I
FP 150 150 mA
Reverse Voltage V
R 5 V
Operating Temperature Topr -40℃~80℃
Storage Temperature Tstg -40℃~85℃
Soldering Temperature Tsol 260℃(for 5 seconds)
*1Condition for IFP is pulse of 1/10 duty and 0.1msec width.