Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
Typ
Max
16.7 25
40 50
RθJC 3 4 °C/W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
A,G
t ≤ 10s RθJA °C/W
°C/W
Maximum Junction-to-Case FSteady-State
TA=25°C PDSM
TC=25°C
Maximum Junction-to-Ambient
A,G
Steady-State
Power Dissipation A
Junction and Storage Temperature Range
PD
TC=100°C
V±20Gate-Source Voltage
Drain-Source Voltage
A
mJ
ID
Pulsed Drain Current
C
20
15
40
14
9.8
TA=70°C
Power Dissipation B
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Continuous Drain
Current B,H
Maximum UnitsParameter
TC=25°C
TC=100°C
40
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
°C
37
18
-55 to 175
W
2.5
1.6
AOD454A
N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 40V
ID = 20A (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 10V)
RDS(ON) < 40mΩ (VGS = 4.5V)
100% UIS Tested!
100% Rg Tested!
General Description
The AOD454A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the
DPAK package, this device is well suited for high
current load applications.
-RoHS Compliant
-Halogen Free*
G
D
S
TO252
DPAK
Top View Bottom View
G
S
D
G
S
D
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD454A
Symbol Min Typ Max Units
BV
DSS
40 V
1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
1.7 2.5 3 V
I
D(ON)
40 A
24 30
T
J
=125°C 37 46
30 40
g
FS
25 S
V
SD
0.76 1 V
I
S
2.5 A
C
iss
516 650 pF
C
oss
82 pF
C
rss
43 pF
R
g
4.6 Ω
Q
g
8.3 10.8 nC
Q
gs
2.3 nC
Q
gd
1.6 nC
t
D(on)
6.4 ns
t
r
3.6 ns
t
D(off)
16.2 ns
t
f
6.6 ns
t
rr
18 24 ns
Q
rr
10 nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
DS
=40V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
DSS
µA
Body Diode Reverse Recovery Charge I
F
=12A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
V
GS
=10V, I
D
=12A
Reverse Transfer Capacitance
I
F
=12A, dI/dt=100A/µs
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
V
GS
=4.5V, I
D
=8A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=12A
mΩ
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=20V, R
L
=1.6Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Turn-On DelayTime
Gate Drain Charge
V
GS
=0V, V
DS
=20V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
TBD
Gate Source Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=10V, V
DS
=20V,
I
D
=12A
TBD
A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM
are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev3: July 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD454A
150
mJ
0
10
20
30
40
012345
V
DS
(Volts)
Figure 1: On-Region Characteristics
I
D
(A)
3.5V
4.0V
10V
4.0V
VGS=3.0V
4.5V
0
10
20
30
40
1.5 2 2.5 3 3.5 4 4.5 5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
22
24
26
28
30
32
34
36
38
0 5 10 15 20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25°C
125°
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
V
GS
=10V
I
D
=12A
V
GS
=4.5V
I
D
=8A
10
20
30
40
50
60
70
80
3 4 5 6 7 8 9 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=12A
25°C
125°C
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD454A
150
0
2
4
6
8
10
0123456789
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
10
100
1000
0 5 10 15 20 25 30 35 40
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
10
100
1000
10000
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJc
Normalized Transient
Thermal Resistance
C
oss
C
rss
0.1
1
10
100
1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
100ms
100
µ
s
V
DS
=20V
I
D
=12A
Single Pulse
D=T
on
/T
T
J,PK
=T
c
+P
DM
.Z
θJC
.R
θJC
R
θJC
=4°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=175°C
T
C
=25°C
10
µ
s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD454A
150
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
5
10
15
20
25
30
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 13: Current De-rating (Note B)
Current rating I
D
(A)
1
10
100
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
Power (W)
T
J(Max)
=150°C
T
A
=25°C
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
Single Pulse
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
10
20
30
40
50
60
0 25 50 75 100 125 150 175
T
CASE
(°C)
Figure 12: Power De-rating (Note B)
Power Dissipation (W)
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AOD454A
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
AR
DSS
2
E = 1/2 LI
AR
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
trr
Alpha & Omega Semiconductor, Ltd. www.aosmd.com