HAF2011(L)/(S) - Hitachi Semiconductor

HAF2011(L),HAF2011(S)

Silicon N Channel MOS FET Series

Power Switching

ADE-208-738A (Z)

2nd. Edition

July 2000

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has

the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down

the gate voltage in case of high junction temperature like applying over power consumption, over current

etc.

Features

• Logic level operation (4 to 6 V Gate drive)

• High endurance capability against to the short circuit

• Built–in the over temperature shut–down circuit

• Latch type shut–down operation (Need 0 voltage recovery)

Outline

Gate resistor

Tempe–

rature

Sencing

Circuit

Latch

Circuit Gate

Shut–

down

Circuit

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

123

HAF2011(L), HAF2011(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS 60 V

Gate to source voltage VGSS 16 V

Gate to source voltage VGSS –2.5 V

Drain current ID40 A

Drain peak current ID(pulse)Note1 80 A

Body-drain diode reverse drain current IDR 40 A

Channel dissipation Pch Note2 50 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25°C

Typical Operation Characteristics

Item Symbol Min Typ Max Unit Test Conditions

Input voltage VIH 3.5 — — V

VIL — — 1.2 V

Input current IIH1 — — 100 µA Vi = 8V, VDS = 0

(Gate non shut down) IIH2 — — 50 µA Vi = 3.5V, VDS = 0

IIL — — 1 µA Vi = 1.2V, VDS = 0

Input current IIH(sd)1 — 0.8 — mA Vi = 8V, VDS = 0

(Gate shut down) IIH(sd)2 — 0.35 — mA Vi = 3.5V, VDS = 0

Shut down temperature Tsd — 175 — °C Channel temperature

Gate operation voltage VOP 3.5 — 12 V

HAF2011(L), HAF2011(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain current ID1 15——A V

GS = 3.5V, VDS = 2V

Drain current ID2 — — 10 mA VGS = 1.2V, VDS = 2V

Drain to source breakdown

voltage V(BR)DSS 60——V I

= 10mA, VGS = 0

Gate to source breakdown

voltage V(BR)GSS 16——V I

= 300µA, VDS = 0

Gate to source breakdown

voltage V(BR)GSS –2.5 — — V IG = –100µA, VDS = 0

Gate to source leak current IGSS1 — — 100 µAV

GS = 8V, VDS = 0

IGSS2 ——50µAV

GS = 3.5V, VDS = 0

IGSS3 ——1 µAV

GS = 1.2V, VDS = 0

IGSS4 — — –100 µAV

GS = –2.4V, VDS = 0

Input current (shut down) IGS(op)1 — 0.8 — mA VGS = 8V, VDS = 0

IGS(op)2 — 0.35 — mA VGS = 3.5V, VDS = 0

Zero gate voltage drain

current IDSS ——10µAV

DS = 60 V, VGS = 0

Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1mA, VDS = 10V

Static drain to source on state

resistance RDS(on) —2533mΩI

= 20A, VGS = 4V Note3

Static drain to source on state

resistance RDS(on) —1520mΩI

= 20A, VGS = 10V Note3

Forward transfer admittance |yfs| 8 16 — S ID = 20A, VDS = 10V Note3

Output capacitance Coss — 940 — pF VDS = 10V , VGS = 0

f = 1 MHz

Turn-on delay time td(on) — 10.7 — µs ID = 20A, VGS = 5V

Rise time tr— 66 — µs RL = 1.5Ω

Turn-off delay time td(off) — 15.5 — µs

Fall time tf—19—µs

Body–drain diode forward

voltage VDF —1 —V I

= 40A, VGS = 0

Body–drain diode reverse

recovery time trr — 200 — ns IF = 40A, VGS = 0

diF/ dt =50A/µs

Over load shut down

operation time Note4 tos1 —1 —msV

GS = 5V, VDD = 16V

Note: 3. Pulse test

4. Including the junction temperature rise of the over loaded condition.

See characteristic curve of HAF2005.

HAF2011(L), HAF2011(S)

Main Characteristics

050 100 150 200

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

0.3

0.1

0.03

0.01

10 µ100 µ1 m 10 m 100 m 1 10

D = PW

ch - c(t) = s (t) • ch - c

ch - c = 2.5°C/W, Tc = 25°C

θ γ θ

Tc = 25°C

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance γs (t)

Normalized Transient Thermal Impedance vs. Pulse Width

500

100

200

0.5

0.3 0.5 1 2 5 10 20 50 100

10 µs

100 µs

1 ms

PW = 10 ms

DC Operation (Tc = 25

°C

)

Ta = 25°C

Operation in this area

is limited by R

DS(on)

Thermal shut down

Operation area

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

HAF2011(L), HAF2011(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (L)

—

1.4 g

10.2 ± 0.3

0.86

0.76 ± 0.1

2.54 ± 0.5

+ 0.2

– 0.1

1.2 ± 0.2

4.44 ± 0.2

1.3 ± 0.15

2.59 ± 0.2

0.4 ± 0.1

11.0 ± 0.5

8.6 ± 0.3

10.0

11.3 ± 0.5

+ 0.3

– 0.5

(1.4)

1.27 ± 0.2

As of January, 2001

Unit: mm

HAF2011(L), HAF2011(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(1)

—

1.3 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.15

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

3.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

HAF2011(L), HAF2011(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

LDPAK (S)-(2)

—

1.35 g

10.2 ± 0.3

1.27 ± 0.2

(1.5)

(1.4)

8.6 ± 0.3

10.0 + 0.3

– 0.5

4.44 ± 0.21.3 ± 0.2

0.1 + 0.2

– 0.1

0.4 ± 0.1

0.86 + 0.2

– 0.1

2.54 ± 0.5

1.2 ± 0.2

5.0+ 0.3

– 0.5

(1.5)

7.8

6.6

2.2

1.7

7.8

7.0

As of January, 2001

Unit: mm

HAF2011(L), HAF2011(S)

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation

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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

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