AO3442 100V N-Channel MOSFET General Description Product Summary The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 100V 1A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 630m RDS(ON) (at VGS=4.5V) < 720m SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 0: Jun 2012 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t 10s V 4 PD TA=70C 20 0.8 IDM TA=25C B Units V 1 ID TA=70C C Maximum 100 RJA RJL www.aosmd.com C -55 to 150 Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Page 1 of 5 AO3442 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250A, VGS=0V 100 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=20V VGS(th) Gate Threshold Voltage VDS=VGSID=250A ID(ON) On state drain current VGS=10V, VDS=5V 1 TJ=55C 100 nA 2.3 2.9 V 514 630 983 1200 VGS=4.5V, ID=0.8A 554 720 Static Drain-Source On-Resistance 1.7 4 TJ=125C A gFS Forward Transconductance VDS=5V, ID=1A 2.8 VSD Diode Forward Voltage IS=1A,VGS=0V 0.9 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units A 5 VGS=10V, ID=1A Coss Max V VDS=100V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=50V, f=1MHz m m S 1.2 V 1 A 100 pF 13 pF 5 pF 5 7.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 2.8 6 nC Qg(4.5V) Total Gate Charge 1.5 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=1A 2.5 0.4 nC 0.8 nC 5 ns 4 ns 12 ns 5 ns 52 ns nC VGS=10V, VDS=50V, RL=50, RGEN=3 IF=5.6A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=5.6A, dI/dt=100A/s 60 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedance from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Jun 2012 www.aosmd.com Page 2 of 5 AO3442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 5 VDS=5V 10V 6V 2.5 5V 4 4.5V 2 ID (A) ID(A) 3 2 1.5 3.5V 1 1 125C 25C 0.5 VGS=3.0V 0 0 0 1 2 3 4 0 5 1200 2 3 4 5 6 Normalized On-Resistance 2.4 1000 RDS(ON) (m ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 800 600 VGS=10V 400 200 2.2 VGS=10V ID=1A 2 1.8 17 5 2 10 1.6 1.4 1.2 VGS=4.5V ID=0.8A 1 0.8 0 0 0.5 0 1 1.5 2 2.5 3 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1200 1.0E+01 ID=1A 1.0E+00 40 125C 1.0E-01 IS (A) RDS(ON) (m ) 900 600 125C 1.0E-02 25C 1.0E-03 25C 300 1.0E-04 1.0E-05 0 2 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: Jun 2012 4 10 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3442 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 160 VDS=50V ID=1A 140 8 Capacitance (pF) VGS (Volts) 120 6 4 Ciss 100 80 60 40 Crss 2 Coss 20 0 0 0 0.5 1 1.5 2 2.5 Qg (nC) Figure 7: Gate-Charge Characteristics 3 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 100 10000 10.0 TA=25C 10s ID (Amps) 100s 1ms 0.1 DC TJ(Max)=150C TA=25C 0.0 Power (W) 1000 RDS(ON) limited 1.0 100 10ms 10 10s 1 1E-05 0.01 0.1 1 10 VDS (Volts) 100 0.001 0.1 10 1000 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=125C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Jun 2012 www.aosmd.com Page 4 of 5 AO3442 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 0: Jun 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5