© 2005 IXYS All rights reserved
515
1 - 3
GWM 160-0055P3
IXYS reserves the right to change limits, test conditions and dimensions.
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
VDSS = 55 V
ID25 = 160 A
RDSon typ. = 2.3 mΩΩ
ΩΩ
Ω
MOSFETs
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to 150°C 55 V
VGS ±20 V
ID25 TC = 25°C 160 A
ID90 TC = 90°C 120 A
IF25 TC = 25°C (diode) 135 A
IF90 TC = 90°C (diode) 90 A
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon on chip level at TVJ = 25°C 2.3 2.9 mΩ
VGS = 10 V TVJ = 125°C 3.8 mΩ
VGSth VDS = 20 V; ID = 1 mA 2 4 V
IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C 1 µA
TVJ = 125°C 0.1 mA
IGSS VGS = ±20 V; VDS = 0 V 0.2 µA
Qg86 nC
Qgs 18 nC
Qgd 25 nC
td(on) 25 ns
tr50 ns
td(off) 70 ns
tf40 ns
VF(diode) IF = 80 A; VGS= 0 V 0.9 1.4 V
trr (diode) IF = 20 A; -di/dt = 100 A/µs; VDS = 30 V 100 ns
RthJC 0.85 K/W
RthJH with heat transfer paste 1.1 K/W
VGS= 10 V; VDS = 44 V; ID = 25 A
VGS= 10 V; VDS = 30 V;
ID = 25 A; RG = 10 Ω
L +
G1
S1
G2
S2
L -
G3
S3
G4
S4
G5
S5
G6
S6
L1
L2
L3
© 2005 IXYS All rights reserved
515
2 - 3
GWM 160-0055P3
IXYS reserves the right to change limits, test conditions and dimensions.
Dimensions in mm (1 mm = 0.0394")
Component
Symbol Conditions Maximum Ratings
IRMS per pin in main current paths (P+, N-, L1, L2, L3)300 A
may be additionally limited by external connections
TVJ -40...+175 °C
Tstg -55...+125 °C
VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 min 1000 V~
FCMounting force with clip 50 - 250 N
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
Rpin to chip 0.6 mΩ
CPcoupling capacity between shorted 160 pF
pins and mounting tab in the case
Weight typ. 25 g
Equivalent Circuits for Simulation
Thermal Response
junction - case (typ.)
C
th1
= 0.039 J/K; R
th1
= 0.28 K/W
C
th2
= 0.069 J/K; R
th2
= 0.57 K/W
© 2005 IXYS All rights reserved
515
3 - 3
GWM 160-0055P3
IXYS reserves the right to change limits, test conditions and dimensions.
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
0 100 200 300
0.0
0.3
0.6
0.9
1.2
RDSon
ID
A
VDS
TVJ
C
VGS
V
V
TVJ = 25°C
RDSon(25°C)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
50
100
150
200
250
300
350
400
-ID
VSD
A
TVJ = 25°C
TVJ = 125°C
VGS = 0 V
135702468
0
50
100
150
200
250
300
0 20406080100
0
2
4
6
8
10
ID
VGS
A
TVJ = 25°C
TVJ = 125°C
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
t
s
K/W
ZthJC
0V
QG
nC
V
VGS = 8 V
10 V
12 V
VDS = 14 V
VDS = 44 V
ID = 25 A
Fig. 1: typ. output characteristics
[VDS = ID (RDSon + 2x Rpin to chip)]
Fig. 4: typ. gate charge characteristics
Fig. 6: typ. transient thermal impedance
Fig. 2: typ. dependence of RDSon on temperature
Fig. 3: typ.transfer characteristics
Fig. 5: typ. conduction characteristics
of body diode
