www.galaxycn.com
BLGALAXY ELECTRICAL
BL
Document Number 0290002
General Description
IT(RMS) VDRM IDRM VTM ITSM RSdv/dt di/dt
(7) (8) (5) (9)
MAX MI N MIN MAX MAX MAX Ma x 60Hz 50Hz MIN MI N TYP
K1050S 1 ±90 95 113 5 150 1.5 20 16.7 0.1 1500 150
K1100S 1 ±90 104 118 5 150 1.5 20 16.7 0.1 1500 150
K1200S 1 ±90 110 125 5 150 1.5 20 16.7 0.1 1500 150
K1300S 1 ±90 120 138 5 150 1.5 20 16.7 0.1 1500 150
K1400S 1 ±90 130 146 5 150 1.5 20 16.7 0.1 1500 150
K1500S 1 ±90 140 170 5 150 1.5 20 16.7 0.1 1500 150
K2000S 1 ±180 190 215 5 150 1.5 20 16.7 0.1 1500 150
K2200S 1 ±180 205 230 5 150 1.5 20 16.7 0.1 1500 150
K2400S 1 ±190 220 250 5 150 1.5 20 16.7 0.1 1500 150
K2500S 1 ±200 240 280 5 150 1.5 20 16.7 0.1 1500 150
KS -- - SERIE S
Type
60
SIDAC VBO: 95 - 280 Volts
60
available for custom design applications. Please
60
GALAXY ELECTR ICA L
holding current of the device.
◇ Switching voltages in the range of 95 V to 330 V.
◇ Sidacs feature glass-passivated junctions that ensure
SMB
60
IBO
mA
TYP
60
µA
10
MAX
10
10
A V V µA kΩV/µSec A/µSec
◇ A sidac is a silicon bilateral voltage triggered switch,
with greater power-handling capabilities than
standard diacs. Upon application of a voltage
exceeding the Sidac breakover voltage point, the Sidac
switches on, through a negative resistance region, to a
a low on-state voltage. Conduction will continue until
the current is interrupted or drops below the minimum
consult the factory for more information.
IH
(3) (4)
long term reliability and stable characteristics by
creating a rugged, reliable barrier against junction
contamination.
◇ Variations of devices covered in this data sheet are
VBO
(1)
10
10
60
60
60
60
60
10
10
10
10
VA
10
1.
Dimensions are in inches and (millimeters)
0.205(5.21)
0.220(5.59)
0.030(0.76)
0.060(1.52)
0.084(2.13)
0.096(2.44)
0.077(1.95)
0.086(2.20)
0.008(0.203)MAX
0.160(4.06)
0.180(4.57)
0.006(0.152)
0.012(0.305)
0.155(3.94)
0.130(3.30)
+I
-V +V
IT
IH
IS
IBO
IDRM
VT
VDRM
VS
VBO
RS(VBO-VS)
(IS-IBO)
RS
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: IT RMS Maximum Rated
Value at Specified Junction Temperature
BLOCKING CAPABILITY MAY BE LOST
DURING AND IMMEDIATELY
FOLLOWING SURGE CURRENT
INTERVAL
OVERLOAD MAY NOT BE REPEATED
UNTIL JUNCTION TEMPERATURE
HAS RETURNED TO STEADY-STATE
RATED VALUE.
1.0 10 1000
100
1.0
2.0
40
100
4.0
10
8.0
6.0
20
Surge Current Duration - Full Cycles
Peak Surge (NonRepetitive)
On-State Current [ITSM] - Amps
www.galaxycn.com
BLGALAXY ELECTRICAL
Document Number 0290002
2.
(9) For best Sidac operation, the load impedance should be near or
less than sw itching resistance.
RS — Sw itching resistance RS= 50/60 Hz sine w ave
(VBO-VS)
◇ All measurements are made at 60Hz w ith a resistive load at an
of this catalog.
◇ Junction temperature range (TJ) is -40°C to +125°C.
◇ Lead solder temperature is a maximum of +230°C for 10 seconds
ambient temperature of +25°C unless otherw ise specif ied.
VDRM — Repetitive peak off-state voltage
(I
S-I
BO
)
VBO
— Breakover voltage 50/60 Hz sine w ave
max i mum; ≥ 1/16" (1.59mm) from case.
◇ Storage temperature range (TS) is -65°C to +150°C.
◇ The case (TC) or lead (TL) temperature is measured as show n on
the dimensional outline draw ings. See “Package Dimensions” section
VTM
— Peak on-state voltage, IT = 1 Amp
General Note s
IDRM — Repetitive peak off -state current 50/60 Hz sine w ave; V = VDRM (5) See Figure 9.1 for more than one full cycle rating.
IH — Dynamic holding current 50/60 Hz sine w ave; R = 100Ω (6) RθJA Type 41 is 70° C/W.
IT(RMS)
— On-state RMS current TJ ≤ 125°C 50/60 Hz sine w ave (7) TL ≤ 100°C
ITSM
— Peak one cycle surge current 50/60 Hz sine w ave (nonrepetitive) (8) See Figure 9.14 f or clarif ication of Sidac operation.
Specific Test Conditions Electrical Specification Notes
di/dt — Critical rate-of-rise of on-state current (1) See Figure 9.5 f or VBO
change vs junction temperature.
100°C (3) See Figure 9.2 for IH vs case temperature.
IBO — Breakover current 50/60 Hz sine w ave (4) See Figure 9.13 for test circuit.
(2) See Figure 9.6 for IBO vs junction temperature. dv/dt — Critical rate-of-rise of off -state voltage at rated VDRM
; TJ ≤
RATINGS AND CHARACTERISTIC CURVES KS --- SERIES
V- I CHARACT ERISTICS FIG.1-- PEAK SURGE CURRENT vs SURGE CURRENT
FFFFFFFF DURATION
0.6
0.8
1
2
4
6
8
10
20
40
60
80
100
200
400
600
468 2 16482 648
2 x 10-3 1 x 10-2 1 x 10-1
Pulse base width (to) - mSec.
Repetitive Peak On-State Current (ITRM) - Amps
f=20 kHz
f=10 kHz
f=5 kHz
f=1 kHz
f=100 kHz
f=10 kHz
Repetition Frequency f=5 Hz
Non- Repeated
to
l/f
Current
VBO Firing
ITRM
Waveform
di/dt Limit Line
TJ=125o C Max
140
120
80
100
20
40
60
26
0 0.2 0.4 0.6 0.8 1.0
Maximum Allowable Ambient Temperature (TA) - ° C
RMS On-State Current [IT(RMS)] - Amps
DO-15x
CURRENT WAVEFORM: Sinusoidal - 60 Hz
LOAD: Resistive or Inductive
FREE AIR RATING
0
.5
1.5
1.0
2.0
-40 -15 +25 +65 +105 +125
Case Temperature (TC) - ° C
IH(TC=25° C)
IH
Ratio of
www.galaxycn.com
BLGALAXY ELECTRICAL
Document Number 0290002
3.
RATINGS AND CHARACTERISTIC CURVES KS -- SERIES
FIG.2 -- NORMALIZED DC HOLDING CURRENT vs
FFFFFF FFFF F CASE/LEAD TEMPERATURE FIG.3 -- REPETITIVE PEAK ON-STATE CURRENT (ITRM)
GGGGvs PUL SE WIDTH at VARIOUS FREQUENCIES
FIG.4 -- MAXIMUM ALLOWABLE AMBI ENT
FFFFFFFFFF FFTEM PERATURE vs ON-STATE CURRENT FIG.5 -- NORMALIZED VBO CHANG E v s JUNC T ION
JJJJJJJJJJJ TEMPERATURE
FIG .6 -- NO RMALIZED REPET ITIVE PEAK BREAKO VER
CURRENT vs J UNCTION TEMPERATUR E FIG.7 -- ON-STATE CURRENT vs ON-STATE VOLTAGE
GGGGGGG(TYPICAL)
0
-2
-6
-4
-12
-10
-8
-40 -20 0 +20 +40 +60
+2
+4
+80 +120+100 +140
+25
Percentage of VBO Change - %
Junction Temperature (TJ) - ° C
7
6
4
5
1
2
3
20 40 50 60 80 90
8
9
100 120110 1307030
Repetitive Peak Breakover
Current (IBO) Multiplier
Junction Temperature (TJ) - ° C
V=VBO
7
6
4
5
1
2
3
0 1.0 2.0 2.2 2.6 2.8
8
9
3.0 3.43.2 3.62.40.8
Positive or Negative Instantaneous
On-State Current (iT) - Amps
Positive or Negative Instantaneous On-State Voltage (VT) - Volts
01.2 1.61.4 1.8
TL =25° C
Kxx01G
S1
PUSH
TO
TEST
TRACE STOPS
100Ω
1%
SWITCH TO TEST IN
EACH DIRECTION
DEVICE
UNDER
TEST
SCOPE
S1
100-250
VAC
60 Hz
IPK
IH
SCOPE INDICATIONS
100Ω
2W
10μF
-
250V
+
+
-
10μF
450V
120VAC
60Hz
XENON LAMP
K2200S
4KV
SIDAC
200-
400V
TRIGGER
TRANSFORMER
20:1
20MΩ
.01μF
400V
24 VAC
60 Hz
50V
-+
10μF
4.7μF
100V 4.7 kΩ
1/2W
200V
K1200E
SIDAC
H.V.
IGNITOR
+
-
+
-
4.7μF
100V 1.2μF
100-250
VAC
60 Hz
100-250
VAC
60 Hz
SIDACSCR
www.galaxycn.com
BLGALAXY ELECTRICAL
Document Number 0290002
4.
FIG.13 -- DYNAMIC HOLDING CURRENT TEST
CIRCUIT FO R SIDA CS
RATINGS AND CHARACTERISTIC CURVES KS --- SERIES
FIG.8 -- POWER DISSIPATION (TYPICAL) vs ON-STATE
MMMMMMMM CURRENT FIG.9 - - COMPARISON OF SIDAC vs SCR
FI G. 10 -- LGNITOR CI RCUI T (LOW VOLTAGE I NPUT) FIG.11 -- TYP ICAL HIGH PRES SURE SODIUM
L A MP FIRING CIRC UIT
FIG .12 - - XENO N LAM P F LASHING CIRCU IT
1.8
1.6
1.2
1.4
0.6
0.8
1.0
01.0
2.0
2.2
0.8
Average On-State Power Dissipation
[PD(AV)] - Watts
RMS On-State Current [IT(RMS)] - Amps
0.4
0.2 0.60.4
0.2
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: See Figure 9.15
Kxx01G
120 VAC
60 Hz
BALLAST
0.47μF
400V
SIDAC
3.3 kΩLAMP
16 mH
120 VAC
220 VAC
60 Hz
220 VAC
SIDAC 0.22μF
7.5 kΩLAMP
BALLAST
INPUT
50Ω
50Ω
VBB1=10V VBB2=0
2N6127
(or equivalent)
(See Note B)
RBB1=150Ω
RBB2=100Ω
VCE MONITOR
TIP-47
VCC=20V
RS=0.1Ω
IC MONITOR
100mH
+
-
+
-
TEST CIRCUIT
SIDAC VBO
0
0.63 A
5 V
0 V
INPUT
VOLTAGE
COLLECTOR
CURRENT
10 V
VCE(sat)
tw≈3 ms
(See Note A)
tw
100 mS
VOLTAGE AND CURRENT WAVEFORMS
COLLECTOR
CURRENT
NOTE A: Input pulse width is increased until ICM = 0.63A.
NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destroyed.
DC(IN)
V≥VBO
(a) Circuit
R
Vc
CIL
SIDAC
Rmax≤VIN-VBO
IBO
Rmin≥VIN-VTM
IH(MIN)
RL
(b) Waveforms
VBO
VC
IL
t
t
LOAD
100-250
VAC
60Hz IH
VBO
120-145°
CONDUCTION
ANGLE
VBO
LOAD CURRENT
IH
VBO
IH
www.galaxycn.com
BLGALAXY ELECTRICAL
Document Number 0290002
5.
FIG.16 -- SIDAC ADDED TO PROTECT TRANSISTOR F OR TYPICAL TRANSISTOR INDUCTIVE
VVVVVVVVVVVVVVVVVLOAD SWITCHING REQUI REMENTS
RATINGS AND CHARACTERISTIC CURVES KS --- SERIES
FIG.14 -- BASIC SIDAC CIRCUIT
FIG.15 -- RELAXATION OSCILLATOR USING a SIDAC
