BL GALAXY ELECTRICAL KS --- SERIES SIDAC VBO: 95 - 280 Volts General Description A sidac is a silicon bilateral voltage triggered switch, with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on, through a negative resistance region, to a a low on-state voltage. Conduction will continue until the current is interrupted or drops below the minimum holding current of the device. Switching voltages in the range of 95 V to 330 V. Sidacs feature glass-passivated junctions that ensure long term reliability and stable characteristics by creating a rugged, reliable barrier against junction contamination. Variations of devices covered in this data sheet are available for custom design applications. Please consult the factory for more information. Type IT(RMS) VDRM VBO (7) (8) (1) A V MAX MIN MIN K1050S 1 90 K1100S 1 K1200S IDRM SMB 0.086(2.20) 0.077(1.95) 0.155(3.94) 0.130(3.30) 0.180(4.57) 0.160(4.06) 0.012(0.305) 0.006(0.152) 0.096(2.44) 0.084(2.13) 0.008(0.203)MAX 0.060(1.52) 0.030(0.76) 0.220(5.59) 0.205(5.21) Dimensions are in inches and (millimeters) IBO IH VTM (3) (4) V mA V ITSM RS (5) (9) A k V/Sec A/Sec A A MAX MAX MAX TYP MAX Max 95 113 5 10 60 150 1.5 20 16.7 90 104 118 5 10 60 150 1.5 20 1 90 110 125 5 10 60 150 1.5 K1300S 1 90 120 138 5 10 60 150 K1400S 1 90 130 146 5 10 60 K1500S 1 90 140 170 5 10 K2000S 1 180 190 215 5 K2200S 1 180 205 230 K2400S 1 190 220 K2500S 1 200 240 60Hz 50Hz MIN dv/dt di/dt MIN TYP 0.1 1500 150 16.7 0.1 1500 150 20 16.7 0.1 1500 150 1.5 20 16.7 0.1 1500 150 150 1.5 20 16.7 0.1 1500 150 60 150 1.5 20 16.7 0.1 1500 150 10 60 150 1.5 20 16.7 0.1 1500 150 5 10 60 150 1.5 20 16.7 0.1 1500 150 250 5 10 60 150 1.5 20 16.7 0.1 1500 150 280 5 10 60 150 1.5 20 16.7 0.1 1500 150 www.galaxycn.com Document Number 0290002 BLGALAXY ELECTRICAL 1. RATINGS AND CHARACTERISTIC CURVES KS --- SERIES FIG.1-- PEAK SURGE CURRENT vs SURGE CURRENT FFFFFFFF DURATION V-I CHARACTERISTICS +I IT IS IDRM -V IBO +V VS VT RS (VBO-VS) (IS-IBO) VBO VDRM Peak Surge (NonRepetitive) On-State Current [ITSM] - Amps 100 RS IH SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: IT RMS Maximum Rated Value at Specified Junction Temperature 40 20 10 8.0 6.0 4.0 2.0 1.0 BLOCKING CAPABILITY MAY BE LOST DURING AND IMMEDIATELY FOLLOWING SURGE CURRENT INTERVAL OVERLOAD MAY NOT BE REPEATED UNTIL JUNCTION TEMPERATURE HAS RETURNED TO STEADY-STATE RATED VALUE. 10 1.0 100 1000 Surge Current Duration - Full Cycles Specific Test Conditions Electrical Specification Notes di/dt -- Critical rate-of-rise of on-state current (1) See Figure 9.5 for VBO change vs junction temperature. dv/dt -- Critical rate-of-rise of off-state voltage at rated VDRM; TJ (2) See Figure 9.6 for IBO vs junction temperature. (3) See Figure 9.2 for IH vs case temperature. 100C IBO -- Breakover current 50/60 Hz sine w ave (4) See Figure 9.13 for test circuit. IDRM -- Repetitive peak off-state current 50/60 Hz sine w ave; V = VDRM (5) See Figure 9.1 for more than one full cycle rating. IH -- Dynamic holding current 50/60 Hz sine w ave; R = 100 (6) RJA Type 41 is 70 C/W. IT(RMS) -- On-state RMS current TJ 125C 50/60 Hz sine w ave (7) TL 100C ITSM -- Peak one cycle surge current 50/60 Hz sine w ave (nonrepetitive) (8) See Figure 9.14 for clarification of Sidac operation. RS -- Sw itching resistance RS= (VBO-VS) (IS-IBO) 50/60 Hz sine w ave (9) For best Sidac operation, the load impedance should be near or less than sw itching resistance. VBO -- Breakover voltage 50/60 Hz sine w ave VDRM -- Repetitive peak off-state voltage VTM -- Peak on-state voltage, IT = 1 Amp General Notes All measurements are made at 60Hz w ith a resistive load at an ambient temperature of +25C unless otherw ise specified. Storage temperature range (TS) is -65C to +150C. The case (TC) or lead (TL) temperature is measured as show n on the dimensional outline draw ings. See "Package Dimensions" section of this catalog. Junction temperature range (TJ) is -40C to +125C. Lead solder temperature is a maximum of +230C for 10 seconds maximum; 1/16" (1.59mm) from case. www.galaxycn.com Document Number 0290002 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES Ratio of IH IH(TC=25 C) 2.0 1.5 1.0 .5 0 -40 -15 +25 +65 +105 +125 Case Temperature (TC) - C ep ea Re te d pe titi f=10 o nF kHz re qu f=10 en 0 kH z cy 100 80 60 40 20 f=1 k Hz 10 8 6 4 f=5 to l/f Hz TJ=125o C Max f=5 kH z f=1 0k Hz f=20 kHz 2 1 0.8 0.6 4 2 x 10-3 68 2 1 x 10-2 4 68 2 1 x 10-1 4 6 81 FIG.5 -- NORMALIZED VBO CHANGE vs JUNCTION JJJJJJJJJJJ TEMPERATURE Percentage of VBO Change - % 100 80 DO -15 x 60 40 0 0.2 0.4 0.6 0.8 +2 0 -2 -4 -6 -8 -10 -12 1.0 -40 FIG.6 -- NORMALIZED REPETITIVE PEAK BREAKOVER CURRENT vs JUNCTION TEMPERATURE 2 30 40 50 60 70 80 90 100 110120 130 Junction Temperature (TJ) - C Positive or Negative Instantaneous On-State Current (iT) - Amps V=VBO 0 +25 +20 +40 +60 +80 +100 +120 +140 FIG.7 -- ON-STATE CURRENT vs ON-STATE VOLTAGE GGGGGGG(TYPICAL) 9 9 8 7 6 5 4 3 -20 Junction Temperature (TJ) - C RMS On-State Current [IT(RMS)] - Amps Repetitive Peak Breakover Current (IBO) Multiplier ITRM VBO Firing Current Waveform nR +4 CURRENT WAVEFORM: Sinusoidal - 60 Hz LOAD: Resistive or Inductive FREE AIR RATING 120 1 20 No 200 140 26 20 di/dt Limit Line 600 400 Pulse base width (to) - mSec. FIG.4 -- MAXIMUM ALLOWABLE AMBIENT FFFFFFFFFF FFTEMPERATURE vs ON-STATE CURRENT Maximum Allowable Ambient Temperature (TA) - C FIG.3-- REPETITIVE PEAK ON-STATE CURRENT (ITRM) GGGGvs PULSE WIDTH at VARIOUS FREQUENCIES Repetitive Peak On-State Current (ITRM) - Amps FIG.2 -- NORMALIZED DC HOLDING CURRENT vs FFFFFFFFFFF CASE/LEAD TEMPERATURE KS -- SERIES TL =25 C 8 7 6 5 4 3 2 1 0 Kxx01G 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 Positive or Negative Instantaneous On-State Voltage (VT) - Volts www.galaxycn.com Document Number 0290002 BLGALAXY ELECTRICAL 3. RATINGS AND CHARACTERISTIC CURVES FIG.8 -- POWER DISSIPATION (TYPICAL) vs ON-STATE MMMMMMMM CURRENT FIG.9 -- COMPARISON OF SIDAC vs SCR CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: See Figure 9.15 2.2 Average On-State Power Dissipation [PD(AV)] - Watts KS --- SERIES 2.0 SCR 1.8 SIDAC 1.6 100-250 VAC 60 Hz 1.4 Kxx01G 1.2 100-250 VAC 60 Hz 1.0 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 RMS On-State Current [IT(RMS)] - Amps FIG.10 -- LGNITOR CIRCUIT (LOW VOLTAGE INPUT) FIG.11 -- TYPICAL HIGH PRESSURE SODIUM LAMP FIRING CIRCUIT BALLAST BALLAST 4.7F 10F - + 100V 4.7 k + 50V SIDAC K1200E SIDAC 1/2W + - 4.7F 100V SIDAC 0.47F 400V 3.3 k 0.22F 7.5 k LAMP LAMP 200V 1.2F 24 VAC 60 Hz 120 VAC 60 Hz 220 VAC 60 Hz 16 mH 120 VAC H.V. IGNITOR FIG.13 -- DYNAMIC HOLDING CURRENT TEST CIRCUIT FOR SIDACS FIG.12 -- XENON LAMP FLASHING CIRCUIT 10F 100 2W XENON LAMP + 250V K2200S + - 120VAC 60Hz 220 VAC 10F 450V PUSH TO TEST 20M 4KV S1 SIDAC .01F 400V 200400V SWITCH TO TEST IN EACH DIRECTION IPK 100-250 VAC 60 Hz TRIGGER TRANSFORMER 20:1 100 1% DEVICE UNDER TEST TRACE STOPS IH SCOPE INDICATIONS S1 SCOPE www.galaxycn.com Document Number 0290002 BLGALAXY ELECTRICAL 4. RATINGS AND CHARACTERISTIC CURVES KS --- SERIES FIG.14 -- BASIC SIDAC CIRCUIT VBO VBO VBO 100-250 VAC 60Hz LOAD IH IH IH 120-145 CONDUCTION ANGLE LOAD CURRENT FIG.15 -- RELAXATION OSCILLATOR USING a SIDAC (b) Waveforms (a) Circuit VBO R SIDAC VDC(IN) VBO Vc VC C RL IL t IL t Rmax Rmin VIN-VBO IBO VIN-VTM IH(MIN) FIG.16 -- SIDAC ADDED TO PROTECT TRANSISTOR FOR TYPICAL TRANSISTOR INDUCTIVE VVVVVVVVVVVVVVVVVLOAD SWITCHING REQUIREMENTS V CE MONITOR INPUT VOLTAGE tw3 ms (See Note A) 0V tw (See Note B) 5V 2N6127 (or equivalent) INPUT COLLECTOR CURRENT 100mH RBB1=150 TIP-47 100 mS 0.63 A 0 50 IC MONITOR VCC =20V - VBB1=10V SIDAC VBO + RBB2=100 50 COLLECTOR CURRENT VBB2=0 + RS=0.1 10 V VCE(sat) TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS NOTE A: Input pulse width is increased until ICM = 0.63A. NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed. www.galaxycn.com Document Number 0290002 BLGALAXY ELECTRICAL 5.