ISSI IS63WV1024LL (R) 128K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION APRIL 2003 FEATURES DESCRIPTION * High-speed access time: 20ns * High-performance, low-power CMOS process * Multiple center power and ground pins for greater noise immunity * Easy memory expansion with CE and OE options * CE power-down * Fully static operation: no clock or refresh required * TTL compatible inputs and outputs * Single 2.5V-3.6V VDD power supply * Packages available: - 32-pin TSOP (Type II) - 32-pin sTSOP (Type I) - 36-Ball miniBGA (6mm x 8mm) - 44-pin TSOP (Type II) The ISSI IS63WV1024LL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. The IS63WV1024LL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 W (typical) with CMOS input levels. The IS63WV1024LL operates from a single VDD power supply. The IS63WV1024LL is available in 32-pin TSOP (Type II), 32-pin sTSOP (Type I), 36-Ball miniBGA (6mm x 8mm), and 44-pin TSOP (Type II) packages. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K X 8 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE OE CONTROL CIRCUIT WE Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 1 ISSI IS63WV1024LL PIN CONFIGURATION PIN CONFIGURATION 44-Pin TSOP (Type II) (T2) 32-Pin TSOP (Type II) (T) 32-Pin sTSOP (Type I) (H) NC NC A4 A3 A2 A1 A0 CE I/O0 I/O1 VDD GND I/O2 I/O3 WE A16 A15 A14 A13 NC NC NC 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PIN DESCRIPTIONS 2 NC NC NC A5 A6 A7 A8 OE I/O7 I/O6 GND VDD I/O5 I/O4 A9 A10 A11 A12 NC NC NC NC A0 A1 A2 A3 CE I/O0 I/O1 VDD GND I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 (R) A16 A15 A14 A13 OE I/O7 I/O6 GND VDD I/O5 I/O4 A12 A11 A10 A9 A8 PIN CONFIGURATION 36-mini BGA (B) (6 mm x 8 mm) A0-A16 Address Inputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Bidirectional Ports VDD Power A GND Ground B I/O4 C I/O5 D GND E VDD F I/O6 G I/O7 H A9 1 2 3 4 5 6 A0 A1 NC A3 A6 A8 A2 WE A4 A7 I/O0 NC A5 I/O1 VDD GND NC NC OE CE A16 A15 I/O3 A10 A11 A12 A13 A14 I/O2 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 ISSI IS63WV1024LL (R) TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE CE OE I/O Operation VDD Current X H X High-Z ISB1, ISB2 H H L L L L H L X High-Z DOUT DIN ICC1, ICC2 ICC1, ICC2 ICC1, ICC2 ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TSTG PT VDD Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation VDD Related to GND Value -0.5 to VDD+0.5 -65 to +150 1.5 -0.2 to +3.9 Unit V C W V Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. OPERATING RANGE (VDD) Range Commercial Industrial Ambient Temperature 0C to +70C -40C to +85C IS63WV1024LL 2.5V-3.6V 2.5V-3.6V Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 3 ISSI IS63WV1024LL (R) DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH Output HIGH Voltage VDD = Min., IOH = -1.0 mA 2.2 -- V VOL Output LOW Voltage VDD = Min., IOL = 1.0 mA -- 0.4 V VIH Input HIGH Voltage 2.2 VDD + 0.3 V VIL Input LOW Voltage(1) -0.3 0.6 V ILI Input Leakage GND VIN VDD -1 1 A ILO Output Leakage GND VOUT VDD, Outputs Disabled -1 1 A Notes: 1. VIL (min.) = -2.0V for pulse width less than 10 ns. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC VDD Dynamic Operating Supply Current Test Conditions Options VDD = Max., IOUT = 0 mA, f = fMAX COM. IND. typ.(2) ICC1 ISB1 ISB2 Operating Supply Current VDD = Max., Iout = 0mA, f = 0 COM. TTL Standby Current (TTL Inputs) VDD = Max., VIN = VIH or VIL CE VIH, f = 0 COM. CMOS Standby Current (CMOS Inputs) VDD = Max., CE VDD - 0.2V, VIN VDD - 0.2V, or VIN 0.2V, f = 0 COM. IND. IND. IND. typ.(2) -20 ns Min. Max. Unit -- -- -- 25 30 15 mA -- -- 5 5 mA -- -- 2 3 mA -- -- -- 20 20 4 uA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD=2.5V, TA=25oC. Not 100% tested. CAPACITANCE(1) Symbol Parameter CIN Input Capacitance COUT Input/Output Capacitance Conditions Max. Unit VIN = 0V 6 pF VOUT = 0V 8 pF Note: 1. Tested initially and after any design or process changes that may affect these parameters. 4 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 ISSI IS63WV1024LL (R) AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (VRef) Output Load Unit 0.4V to VDD-0.3V 1.5ns 1.25V See Figures 1a and 1b AC TEST LOADS 319 Zo=50 2.5V 50 VRef OUTPUT 30 pF Including jig and scope Figure 1a. OUTPUT 5 pF Including jig and scope Figure 1b. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 353 5 ISSI IS63WV1024LL (R) READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter -20 ns Min. Max. Unit tRC Read Cycle Time 20 -- ns tAA Address Access Time -- 20 ns tOHA Output Hold Time 3 -- ns tACE CE Access Time -- 20 ns tDOE OE Access Time -- 8 ns tLZOE(2) OE to Low-Z Output 0 -- ns tHZOE(2) OE to High-Z Output 0 8 ns tLZCE CE to Low-Z Output 3 -- ns CE to High-Z Output 0 8 ns tPU CE to Power Up Time 0 -- ns tPD CE to Power Down Time -- 20 ns (2) tHZCE (2) Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to VDD-0.3V and output loading specified in Figure 1. 2. Tested with the loading specified in Figure 1. Transition is measured 500 mV from steady-state voltage. Not 100% tested. 6 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 ISSI IS63WV1024LL (R) AC WAVEFORMS READ CYCLE NO. 1(1,2) t RC ADDRESS t AA t OHA t OHA DOUT DATA VALID PREVIOUS DATA VALID READ1.eps READ CYCLE NO. 2(1,3) t RC ADDRESS t AA t OHA OE t HZOE t DOE t LZOE CE t ACE t HZCE t LZCE DOUT HIGH-Z DATA VALID CE_RD2.eps Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE = VIL. 3. Address is valid prior to or coincident with CE LOW transitions. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 7 ISSI IS63WV1024LL (R) WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range) Symbol -20 ns Min. Max. Parameter Unit tWC Write Cycle Time 20 -- ns tSCE CE to Write End 12 -- ns tAW Address Setup Time to Write End 12 -- ns tHA Address Hold from Write End 0 -- ns tSA Address Setup Time 0 -- ns PWE1(1) t WE Pulse Width (OE High) 12 -- ns tPWE2(2) WE Pulse Width (OE Low) 17 -- ns tSD Data Setup to Write End 9 -- ns tHD Data Hold from Write End 0 -- ns (2) tHZWE WE LOW to High-Z Output -- 9 ns tLZWE(2) WE HIGH to Low-Z Output 3 -- ns Notes: 1. Test conditions assume signal transition times of 3ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to VDD-0.3V and output loading specified in Figure 1a. 2. Tested with the loading specified in Figure 1b. Transition is measured 500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. AC WAVEFORMS WRITE CYCLE NO. 1(1,2 (CE Controlled, OE = HIGH or LOW) t WC VALID ADDRESS ADDRESS t SA t SCE t HA CE t AW t PWE1 t PWE2 WE t HZWE DOUT DATA UNDEFINED t LZWE HIGH-Z t SD DIN t HD DATAIN VALID CE_WR1.eps 8 Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 ISSI IS63WV1024LL (R) AC WAVEFORMS WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle) t WC ADDRESS VALID ADDRESS t HA OE CE LOW t AW t PWE1 WE t SA DOUT t HZWE t LZWE HIGH-Z DATA UNDEFINED t SD t HD DATAIN VALID DIN CE_WR2.eps WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle) t WC ADDRESS VALID ADDRESS OE LOW CE LOW t HA t AW t PWE2 WE tSA DOUT DATA UNDEFINED t HZWE t LZWE HIGH-Z t SD DIN t HD DATAIN VALID CE_WR3.eps Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE > VIH. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 9 ISSI IS63WV1024LL (R) DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter Test Condition Operations VDR VDD for Data Retention See Data Retention Waveform IDR Data Retention Current VDD = 1.2V, CE VDD - 0.2V COM. IND. tSDR tRDR Min. Typ.(1) Max. 1.2 -- 3.6 V -- -- 4 4 20 20 A Unit Data Retention Setup Time See Data Retention Waveform 0 -- -- ns Recovery Time See Data Retention Waveform tRC -- -- ns Note: 1. Typical values are measured at VDD = 2.5V, TA = 25 C. Not 100% tested. O DATA RETENTION WAVEFORM (CE Controlled) tSDR Data Retention Mode tRDR VDD VDR CE GND 10 CE VDD - 0.2V Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 ISSI IS63WV1024LL (R) ORDERING INFORMATION Commercial Range: 0C to +70C Speed (ns) 20 Order Part No. Package IS63WV1024LL-20T IS63WV1024LL-20H IS63WV1024LL-20T2 IS63WV1024LL-20B 32-pin TSOP (Type II) sTSOP (Type I) (8mm x13.4mm) 44-pin TSOP (Type II) mBGA(6mmx8mm) Industrial Range: -40C to +85C Speed (ns) 20 Order Part No. Package IS63WV1024LL-20TI IS63WV1024LL-20HI IS63WV1024LL-20T2I IS63WV1024LL-20BI 32-pin TSOP (Type II) sTSOP (Type I) (8mm x13.4mm) 44-pin TSOP (Type II) mBGA(6mmx8mm) Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. 00A 04/23/03 11 ISSI (R) PACKAGING INFORMATION Mini Ball Grid Array Package Code: B (36-pin) Top View Bottom View b (36x) 1 2 3 4 5 6 6 A 4 3 2 1 A e B B C C D D D 5 D1 E E F F G G H H e E E1 Notes: 1. Controlling dimensions are in millimeters. A2 A A1 SEATING PLANE mBGA - 6mm x 8mm mBGA - 8mm x 10mm MILLIMETERS INCHES MILLIMETER INCHES Sym. Min. Typ. Max. Min. Typ. Max. Sym. Min. Typ. Max. Min. Typ. Max. N0. Leads 36 36 N0. Leads 36 36 A -- -- 1.20 -- -- 0.047 A -- -- 1.20 -- -- 0.047 A1 0.24 -- 0.30 0.009 -- 0.012 A1 0.24 -- 0.30 0.009 -- 0.012 A2 0.60 -- -- 0.024 -- -- A2 0.60 -- -- 0.024 -- -- D 7.90 8.00 D 9.90 10.00 10.10 D1 E 8.10 5.25BSC 5.90 6.00 0.311 0.315 0.319 0.207BSC 6.10 D1 0.232 0.236 0.240 E 5.25BSC 7.90 0.390 0.394 0.398 .207BSC 8.00 8.10 0.311 0.315 0.319 E1 3.75BSC 0.148BSC E1 3.75BSC 0.148BSC e 0.75BSC 0.030BSC e 0.75BSC 0.030BSC 0.012 0.014 0.016 b b 0.30 0.35 0.40 0.30 0.35 0.40 0.012 0.014 0.016 Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. E 01/15/03 ISSI PACKAGING INFORMATION Plastic STSOP - 32 pins Package Code: H (Type I) A2 A A1 1 N E b e D1 S SEATING PLANE D L Plastic STSOP (H - Type I) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 32 A -- 1.25 -- 0.049 A1 0.05 -- 0.002 -- A2 0.95 1.05 0.037 0.041 b 0.17 0.23 0.007 0.009 C 0.14 0.16 0.0055 0.0063 D 13.20 13.60 0.520 0.535 D1 11.70 11.90 0.461 0.469 E 7.90 8.10 0.311 0.319 e 0.50 BSC 0.020 BSC L 0.30 0.70 0.012 0.028 S 0.28 Typ. 0.011 Typ. 0 5 0 5 Integrated Silicon Solution, Inc. PK13197H32 Rev. B 04/21/03 C Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. (R) ISSI (R) PACKAGING INFORMATION Plastic TSOP Package Code: T (Type II) N N/2+1 E1 Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and E should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane. 1 N/2 D SEATING PLANE A ZD e Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD Millimeters Min Max Inches Min Max (N) 32 -- 1.20 -- 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF. 0.037 REF. 0 5 0 5 b L A1 Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 -- 1.20 -- 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF. 0.032 REF. 0 5 0 5 Millimeters Min Max C Inches Min Max 50 -- 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF. 0 5 -- 0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0 5 Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774 Rev. E 02/20/03