IGBT-IPM R series 1200V / 50A 7 in one-package
7MBP50RA120
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· Compatible with existing IPM-N series packages
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol Rating Unit
Min. Max.
DC bus voltage
DC bus voltage (surge)
DC bus voltage (short operating)
Collector-Emitter voltage
DB Reverse voltage
INV Collector current DC
1ms
DC
Collector power dissipation One transistor
DB Collector current DC
1ms
Forward current of Diode
Collector power dissipation One transistor
Junction temperature
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Storage temperature
Operating case temperature
Isolating voltage (Case-Terminal)
Screw torque Mounting (M5)
Terminal (M5)
VDC
VDC(surge)
VSC
VCES
VR
IC
ICP
-IC
PC
IC
ICP
IF
PC
Tj
VCC *1
Vin *2
Iin
VALM *3
IALM *4
Tstg
Top
Viso *5
Item
0
0
200
0
-
-
-
-
-
-
-
-
-
-
0
0
-
0
-
-40
-20
-
-
-
900
1000
800
1200
1200
50
100
50
357
25
50
25
198
150
20
Vz
1
Vcc
15
125
100
AC2.5
3.5 *6
3.5 *6
V
V
V
V
V
A
A
A
W
A
A
A
W
°C
V
V
mA
V
mA
°C
°C
kV
N·m
N·m
*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*3 Apply VALM between terminal No. 16 and 10.
*4 Apply IALM to terminal No. 16.
*5 50Hz/60Hz sine wave 1 minute.
*6 Recommendable Value : 2.5 to 3.0 N·m
Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
INV Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of FWD
DB Collector current at off signal input
Collector-Emitter saturation voltage
Forward voltage of Diode
ICES
VCE(sat)
VF
ICES
VCE(sat)
VF
VCE=1200V input terminal open
Ic=50A
-Ic=50A
VCE=1200V input terminal open
Ic=25A
-Ic=25A
– 1.0 mA
– – 2.6 V
– – 3.0 V
– – 1.0 mA
– – 2.6 V
– – 3.3 V
Fig.1 Measurement of case temperature
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7MBP50RA120 IGBT-IPM
Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Power supply current of P-line side Pre-driver(one unit)
Power supply current of N-line side three Pre-driver
Input signal threshold voltage (on/off)
Input zener voltage
Over heating protection temperature level
Hysteresis
IGBT chips over heating protection temperature level
Hysteresis
Collector current protection level INV
DB
Over current protection delay time
Under voltage protection level
Hysteresis
Alarm signal hold time
SC protection delay time
Limiting resistor for alarm
fsw=0 to 15kHz Tc=-20 to 100°C *7
fsw=0 to 15kHz Tc=-20 to 100°C *7
ON
OFF
Rin=20k ohm
VDC=0V, Ic=0A, Case temperature Fig.1
surface of IGBT chips
Tj=125°C
Tj=125°C
Tj=25°C Fig.2
Tj=25°C Fig.3
Iccp
ICCN
Vin(th)
VZ
TCOH
TCH
TjOH
TjH
IOC
IOC
tDOC
VUV
VH
tALM
tSC
RALM
3
10
1.00
1.25
-
110
-
150
-
75
38
-
11.0
0.2
1.5
-
1425
-
-
1.35
1.60
8.0
-
20
-
20
-
-
10
-
-
2
-
1500
18
65
1.70
1.95
-
125
-
-
-
-
-
-
12.5
-
-
12
1575
mA
mA
V
V
V
°C
°C
°C
°C
A
A
µs
V
V
ms
µs
ohm
Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)
Item Symbol Condition Min. Typ. Max. Unit
Switching time (IGBT)
Switching time (FWD)
ton IC=50A, VDC=600V
toff
trr IF=50A, VDC=600V
0.3 - -
- - 3.6
- - 0.4
µs
µs
µs
Thermal characteristics(Tc=25°C)
Item Symbol Typ. Max. Unit
Junction to Case thermal resistance
Case to fin thermal resistance with compound
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
- 0.35
- 0.85
- 0.63
0.05 -
°C/W
°C/W
°C/W
°C/W
INV IGBT
FWD
DB IGBT
Item Symbol Min. Typ. Max. Unit
DC bus voltage
Operating power supply voltage range of Pre-driver
Switching frequency of IPM
Screw torque Mounting (M5)
Terminal (M5)
VDC 200 - 800 V
VCC 13.5 15 16.5 V
fSW 1 - 20 kHz
- 2.5 - 3.0 N·m
- 2.5 - 3.0 N·m
Recommendable value
*7 Switching frequency of IPM
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7MBP50RA120 IGBT-IPM
Block diagram
Pre-drivers include following functions
a) Amplifier for driver
b) Short circuit protection
c) Undervoltage lockout circuit
d) Over current protection
e) IGBT chip over heating protection
Outline drawings, mm
Mass : 440g
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7MBP50RA120 IGBT-IPM
Characteristics (Representative)
Control Circuit
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25
Power supply current vs. Switchin g freque ncy
Tj=100°C
N-side
P-side
Power supply current : Icc (mA)
Switchin
g
fr equenc
y
: fsw (kHz)
Vcc=13V
Vcc=13V
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
0
0.5
1
1.5
2
2.5
12 13 14 15 16 17 18
Input si
g
nal threshold vol ta
g
e
vs. Power suppl
y
volta
g
e
Input signal threshold voltage
: Vin(on),Vin(off) (V)
Power supply voltage : Vcc (V)
T
j
=25°C
T
j
=125°C
} Vin(on)
} Vin(off)
0
2
4
6
8
10
12
14
20 40 60 80 100 120 140
Under volta
g
e vs. Junction temp erature
Und er voltage : VU VT (V)
Junction temperature : Tj (°C)
0
0.2
0.4
0.6
0.8
1
20 40 60 80 100 120 140
Under vo lta
g
e hysterisis vs. Jnction temp erature
Under voltage hysterisis : VH (V)
Junction temperature : Tj (°C)
0
0.5
1
1.5
2
2.5
3
12 13 14 15 16 17 18
Al arm hold tim e vs. Power supply vo ltage
Al arm hold time : tALM (mSec)
Power suppl
y
vo l ta
g
e : Vc c (V)
Tj=125°C
Tj=25°C
0
50
100
150
200
12 13 14 15 16 17 18
Over heating characteristics
TcOH,TjOH,TcH,TjH vs. Vcc
Over heating protection : TcOH,TjOH (°C)
OH hysterisis : TcH ,TjH (°C)
Power supply voltage : Vcc (V)
TjOH
TcOH
TcH,TjH
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7MBP50RA120 IGBT-IPM
Inverter
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitter volta
g
e
T
=25°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collector-Emitter volta
g
e : Vce
(
V
)
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitter volta
g
e
Tj=125°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collector-Em it ter volta
g
e : Vce (V)
10
100
1000
10000
0 1020304050607080
Switching time v s. Col l ec tor curr ent
Edc=600V,Vcc=15V,Tj=25°C
Swi tching time : ton,tof f,tf (nSec)
Collector current : Ic (A)
toff
ton
tf
10
100
1000
10000
0 1020304050607080
Switching tim e v s. Collec tor current
Edc=600V,Vcc=15V,Tj=125°C
Switching time : ton,toff,tf (nSec)
Collector current : Ic (A)
toff
ton
tf
0
10
20
30
40
50
60
70
80
00.511.522.53
Forward current vs. Forward voltage
125°C 25°C
Forwar d Current : If ( A)
Forward volta
g
e : Vf (V)
10
100
1000
0 1020304050607080
Reverse recover
y
charac te ris t i c s
trr,Irr vs . IF
Reverse recov ery current : Irr(A)
Reverse recov ery time : trr(nSec)
Forward current : IF
(
A
)
trr125°C
trr25°C
Irr125°C
Irr25°C
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7MBP50RA120 IGBT-IPM
0.01
0.1
1
0.001 0.01 0.1 1
Transient thermal r es i stanc e
Thermal resi stance : Rth(j-c ) (°C/W)
Pul se widt h :Pw (sec)
FWD
IGBT
0
100
200
300
400
500
600
700
0 200 400 600 800 1000 1200 1400
Reversed biased safe operatin
g
area
Vcc= 15V,Tj 12 5°C
Collector current : Ic (A)
Collector-Emitter volta
g
e : Vce (V)
SCSOA
(non-re petiti v e pulse)
RBSOA
(Repetitive pulse)
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100 120 140 160
Power derating for IGBT
(per device )
Collecter Power Dissipation : Pc (W)
Case Temper ature : Tc (°C)
0
25
50
75
100
125
150
0 20 40 60 80 100 120 140 160
Power de ratin
g
for FWD
(per de vice)
Co lle c ter Powe r Dis s ipation : Pc (W)
Case Temper ature : Tc (°C)
0
5
10
15
20
25
0 1020304050607080
Switchin
g
Loss vs. Collector Current
Edc=600V,Vcc=15V,T
j
=25°C
Eon
Eoff
Err
Switching loss : Eon,Eoff ,Err (mJ/cycle)
Coll ector current : Ic (A)
0
5
10
15
20
25
0 1020304050607080
Switchin
g
Loss vs. Collector Current
Edc=600V,Vcc=15V,Tj=125°C
Eon
Eoff
Err
Switching loss : Eon,Eoff,Err (mJ/cycle)
Collector current : Ic (A)
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7MBP50RA120 IGBT-IPM
0
50
100
150
200
0 20 40 60 80 100 120 140
Over current protection vs. Junction temperature
Vcc=15V
Junction te m perature : Tj(°C)
Over current protection level : Ioc(A)
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7MBP50RA120 IGBT-IPM
Brake
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3
C ollector cu rrent vs. C ollecto r-Emitte r volta
g
e
T
j
=25°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collector-Em itter vo l ta
g
e : V ce (V )
0
5
10
15
20
25
30
35
40
0 0.5 1 1.5 2 2.5 3
Collector current vs. Collector-Emitter voltage
Tj=125°C
Vcc=13V
Vcc=15V
Vcc=17V
Collector Current : Ic (A)
Collector-Emitter vol tage : Vce (V)
0.01
0.1
1
0.001 0.01 0.1 1
Transient thermal resista nce
Therma l r e sistance : Rth(j-c) (°C/W)
Pulse width :Pw (sec)
IGBT
0
50
100
150
200
250
300
350
0 200 400 600 800 1000 1200 1400
Rev ersed biased safe operatin
g
area
Vcc=15V,T
j
125°C
Collector current : Ic (A)
Collec tor-Emitter volta
g
e : Vce
(
V
)
SCSOA
(non-rep etitiv e pulse)
RBSOA
(Repetitive p ulse)
0
50
100
150
200
250
0 20 40 60 80 100 120 140 160
Power deratin
g
for IGBT
(per device)
Collecter Po wer Dissipation : Pc (W)
Case Temperature : Tc (°C)
0
20
40
60
80
100
0 20 40 60 80 100 120 140
Over current protection vs. Junction temperature
Vcc=15V
Over current protection level : Ioc(A)
Junction te m perature : Tj (°C)
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