Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Repetitive peak reverse voltage DC forward current Symbol VRRM Conditions Tvj min 25 C Unit V 3600 A Peak forward current IFRM tp = 1 ms 7200 A Total power dissipation Ptot TC = 25 C, Tvj = 150 C 10300 W Surge current IFSM VR = 0 V, Tvj = 150 C, tp = 10 ms, half-sinewave 18000 A Isolation voltage Visol 1 min, f = 50 Hz 4000 V Junction temperature Tvj 150 C Junction operating temperature IF max 1700 Tvj(op) -50 150 C Case temperature TC -50 125 C Storage temperature Tstg C Mounting torques 2) 1) 2) -50 125 Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 for detailed mounting instructions refer to ABB Document No. 5SYA2039 Nm Diode characteristic values 2) Parameter Forward voltage Symbol 3) VF Continuous reverse current IR Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 3) IF = 3600 A VR = 1700 A Irr Recovered charge 2) Conditions VCC = 900 V, IF = 3600 A, di/dt = 11.5 kA/s L = 50 nH, inductive load switch: 5SNA 3600E170300 Erec typ max Unit Tvj =25 C min 1.85 2.2 V 2.3 Tvj =125 C 1.95 Tvj =150 C 1.9 Tvj =25 C 0.02 Tvj =125 C 20 V V mA 40 mA Tvj =150 C 70 mA Tvj =25 C 2030 A Tvj =125 C 2340 A Tvj =150 C 2500 A Tvj =25 C 1000 C Tvj =125 C 1560 C Tvj =150 C 1820 C Tvj =25 C 900 ns Tvj =125 C 1230 ns Tvj =150 C 1320 ns Tvj =25 C 710 mJ Tvj =125 C 1080 mJ Tvj =150 C 1260 mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 4) Parameter Symbol Diode thermal resistance junction to case Diode thermal resistance case to heatsink min typ Rth(j-c)DIODE max Unit 0.012 K/W 2) Rth(c-s)DIODE Comparative tracking index CTI Module stray inductance L Resistance, terminal-chip 2) Conditions Diode, grease = 1W/m x K 0.018 K/W 8 nH 400 AC RAA'+CC' TC =25 C 0.055 TC =125 C 0.075 TC =150 C 0.080 m for detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 4) Parameter Symbol Conditions Dimensions LxWxH Typical Clearance distance in air da according to IEC 60664-1 and EN 50124-1 Surface creepage distance ds according to IEC 60664-1 and EN 50124-1 Mass m 4) Package and mechanical properties according to IEC 60747 - 15 2 5SLA 3600E170300 | Doc. No. 5SYA 1416-03 06-2012 min typ 190 x 140 x 38 Term. to base: 23 Term. to term: 19 Term. to base: 33 Term. to term: 32 max Unit mm mm mm 1350 g Electrical configuration Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 3 5SLA 3600E170300 | Doc. No. 5SYA 1416-03 06-2012 3000 2500 VCC = 900 V VGE = 15 V RG = 0.6 ohm L = 50 nH 500 Tvj = 125 C Tvj = 150 C 1200 2400 3600 4800 6000 Tvj = 125 C Tvj = 150 C 0 2 7200 3 4 5 6 7 8 9 10 11 12 13 14 di/dt [kA/s] IF [A] Fig. 1 RG = 1.5 ohm 1000 500 0 0 Erec RG = 0.47 ohm 1000 1500 Qrr RG = 0.6 ohm Erec RG = 2.2 ohm 1500 2000 RG = 4.7 ohm Qrr Erec [mJ], Irr [A], Qrr [C] Erec [mJ], Irr [A], Qrr [C] 2000 Irr RG = 0.83 ohm Irr RG = 1.0 ohm VCC = 900 V IF = 3600 A L = 50 nH 2500 Typical reverse recovery characteristics vs forward current Fig. 2 Typical reverse recovery characteristics vs di/dt 7200 VCC 1200 V di/dt 14 kA/s Tvj = 150 C L = 50 nH 7200 25 C 6000 6000 4800 IR [A] IF [A] 4800 125 C 3600 150 C 2400 2400 1200 1200 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 VF [V] Fig. 3 3600 Typicial diode forward characteristics chip level 4 5SLA 3600E170300 | Doc. No. 5SYA 1416-03 06-2012 500 1000 VR [V] Fig. 4 Safe operating area diode (SOA) 1500 2000 0.1 Analytical function for transient thermal impedance: n R i (1 - e -t/ i ) Z th (j-c) (t) = 0.01 DIODE Zth(j-c) [K/W] i 1 Ri(K/kW) 8.432 1.928 0.866 0.839 i(ms) 210 29.6 7.01 1.49 5SLA 3600E170300 | Doc. No. 5SYA 1416-03 06-2012 0.001 0.0001 0.001 Fig. 5 0.01 0.1 t [s] 1 10 Thermal impedance vs time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2058 Surge currents for IGBT diodes 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded.