Preliminary PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 - 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETS designed for cellular power amplifier applications in the 2110 - 2170 frequency band. Features include I/O matching, high gain, and thermally-enhanced ceramic opencavity packages with slotted and earless flanges. Two-carrier WCDMA Drive-up Broadband internal matching * Typical two-carrier WCDMA performance at 2170 MHz, 30 V - Average output power = 32 W - Linear Gain = 18 dB - Efficiency = 30% - Intermodulation distortion = -37 dBc - Adjacent channel power = -42 dBc * Typical CW performance, 2170 MHz, 30 V - Output power at P-1dB = 150 W - Efficiency = 55% 10 * 5 Integrated ESD protection: Human Body Model, Class 2 (minimum) * Capable of handling 10:1 VSWR @ 30 V, 150 W (CW) output power * Pb-Free and RoHS compliant 35 Efficiency -30 30 -35 25 IM3 Up -40 20 -45 15 ACPR -50 -55 38 40 42 44 46 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) * 40 -25 PTFB211501F* Package H-37248-2 Features VDD = 30 V, IDQ = 1.2 A, = 2170 MHz, 3GPP WCDMA signal, 8 dB P/A R, 10 MHz carrier spacing -20 PTFB211501E* Package H-36248-2 48 Average Output Power (dBm) RF Characteristics Two-Carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 32 W AVG, 1 = 2135 MHz, 2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps -- 18 -- dB Drain Efficiency D -- 30 -- % Intermodation Distortion Imd -- -37 -- dBc All published data at TCASE = 25C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device--observe handling precautions! Preliminary Data Sheet 1 of 5 Rev. 01, 2009-07-27 Preliminary PTFB211501E PTFB211501F RF Characteristics (cont.) Two-tone Measurement (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.2 A, POUT = 140 W PEP, = 2170 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps -- 18 -- dB Drain Efficiency D -- 40 -- % Intermodation Distortion Imd -- -30 -- dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 A V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, V GS = 0 V IDSS -- -- 1.0 A VDS = 63 V, V GS = 0 V IDSS -- -- 10.0 A On-State Resistance VGS = 10 V, V DS = 0.1 V RDS(on) -- 0.08 -- Operating Gate Voltage VDS = 30 V, IDQ = 1.2 A VGS 1.6 2.1 3.0 V Gate Leakage Current VGS = 10 V, V DS = 0 V IGSS -- -- 1.0 A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -6 to +10 V Junction Temperature TJ 200 C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C, 150 W CW) RJC TBD C/W Ordering Information Type and Version Package Type Package Description Shipping Marking PTFB211501E V4* H-36248-2 Slotted flange, single-ended Tray PTFB211501E PTFB211501E V4 R250* H-36248-2 Slotted flange, single-ended Tape & Reel 250 pcs PTFB211501E PTFB211501F V4* H-37248-2 Earless flange, single-ended Tray PTFB211501F PTFB211501F V4 R250* H-37248-2 Earless flange, single-ended Tape & Reel 250 pcs PTFB211501F *See Infineon distributor for future availability. Preliminary Data Sheet 2 of 5 Rev. 01, 2009-07-27 Preliminary PTFB211501E PTFB211501F Package Outline Specifications Package H-36248-2 (45 X 2.72 [.107]) CL 4.830.51 [.190.020] D FLANGE 9.78 [.385] LID 9.40 +0.10 19.43 0.51 [.765.020] -0.15 S C L [.370 +.004 -.006 ] G 2X 12.70 [.500] 2X R1.63 [R.064] 4X R1.52 [R.060] 27.94 [1.100] 19.810.20 [.780.008] 1.02 [.040] C L SPH 1.57 [.062] 3.610.38 [.142.015] 0.0381 [.0015] -A34.04 [1.340] 0 7 1 1 1 7 _ h -3 6 2 4 8 -2 _ p o Diagram Notes--unless otherwise specified: Preliminary Data Sheet 1. Lead thickness: 0.102 +0.051/-0.025 [.004 +.002/-.001]. 2. All tolerances 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] 3 of 5 Rev. 01, 2009-07-27 Preliminary PTFB211501E PTFB211501F Package Outline Specifications (cont.) Package H-37248-2 ( 45 X 2.72 [.107]) CL 4.830.51 [.190.020] D +0.10 LID 9.40 -0.15 [.370+.004 -.006 ] FLANGE 9.78 [.385] C L 19.430.51 [.765.020] G 4X R0.508+0.381 -0.127 [R.020+.015 - .005] 2X 12.70 [.500] 19.810.20 [.780.008] C L SPH 1.57 [.062] 1.02 [.040] 0.0381 [.0015] -A- S 0 7 1 1 1 7 _ h -3 7 2 4 8 -2 _ p o 3.610.38 [.142.015] 20.57 [.810] Diagram Notes--unless otherwise specified: 1. Lead thickness: 0.102 +0.051/-0.025 [.004 +.002/-.001]. 2. All tolerances 0.127 [.005] unless specified otherwise. 3. Pins: D = drain, S = source, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Preliminary Data Sheet 4 of 5 Rev. 01, 2009-07-27 PTFB211501E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-07-27 none Previous Version: Page Preliminary Data Sheet Subjects (major changes since last revision) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International GOLDMOS(R) is a registered trademark of Infineon Technologies AG. Edition 2009-07-27 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Preliminary Data Sheet 5 of 5 Rev. 01, 2009-07-27