PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D SMPS MOSFET HEXFET(R) Power MOSFET Applications High frequency DC-DC converters l Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 150V RDS(on) max ID 0.032 60A l TO-220AB IRFB52N15D D2Pak IRFS52N15D TO-262 IRFSL52N15D Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Units 60 43 240 3.8 320 2.1 30 5.5 -55 to + 175 A W W/C V V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA RJA Notes Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient through Typ. Max. --- 0.50 --- --- 0.47 --- 62 40 Units C/W are on page 11 www.irf.com 1 06/25/02 http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 150 --- --- 3.0 --- --- --- --- Typ. --- 0.16 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.032 VGS = 10V, ID = 36A 5.0 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 19 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 60 18 28 16 47 28 25 2770 590 110 3940 260 550 Max. Units Conditions --- S VDS = 50V, ID = 36A 89 ID = 36A 27 nC VDS = 75V 42 VGS = 10V, --- VDD = 75V --- I D = 36A ns --- RG = 2.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 120V, = 1.0MHz --- VGS = 0V, VDS = 0V to 120V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 470 36 32 mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 60 --- --- showing the A G integral reverse --- --- 240 S p-n junction diode. --- --- 1.5 V TJ = 25C, IS = 36A, VGS = 0V --- 140 210 nS TJ = 25C, IF = 36A --- 780 1170 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D 1000 1000 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 100 TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP 10 5.0V 1 100 10 5.0V 1 300s PULSE WIDTH Tj = 175C 300s PULSE WIDTH Tj = 25C 0.1 0.1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000.00 3.0 I D = 60A 2.5 T J = 175C T J = 25C 10.00 VDS = 15V 300s PULSE WIDTH 1.00 5.0 7.0 9.0 11.0 13.0 2.0 (Normalized) 100.00 RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current ( ) 10 VDS , Drain-to-Source Voltage (V) 1.5 1.0 0.5 V GS = 10V 0.0 15.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 10000 Ciss 1000 Coss 100 Crss 12 VGS, Gate-to-Source Voltage (V) 100000 ID= 36A VDS= 120V VDS= 75V 10 8 6 4 2 0 10 1 10 100 1000 0 VDS, Drain-to-Source Voltage (V) 20 30 40 50 60 70 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000.00 OPERATION IN THIS AREA LIMITED BY R DS(on) 100.00 ID , Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 10 100 T J = 175C 10.00 T J = 25C 1.00 100sec 10 1msec 10msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.10 0.1 0.0 0.5 1.0 1.5 2.0 2.5 1 VSD , Source-toDrain Voltage (V) 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D 70 RD VDS 60 VGS D.U.T. RG + I D , Drain Current (A) 50 -VDD 10V 40 Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 TC , Case Temperature 150 ( C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC ) 1 D = 0.50 0.1 0.20 Thermal Response 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 J t1 / t 2 = P DM x Z thJC +TC 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D 900 1 5V ID 15A TOP 26A D R IV E R D .U .T RG + V - DD IA S 20V tp 720 A 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp E AS , Single Pulse Avalanche Energy (mJ) L VDS BOTTOM 36A 540 360 180 0 25 50 75 100 125 Starting Tj, Junction Temperature 150 175 ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50K 10 V 12V .2F .3F QGS QGD D.U.T. VG + V - DS VGS 3mA IG Charge ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit www.irf.com http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) -B - 3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 6.4 7 (.2 5 5 ) 6.1 0 (.2 4 0 ) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 3 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 ) 3X 3X 1 .4 0 (.0 5 5 ) 1 .1 5 (.0 4 5 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU RC E 4 - D R A IN 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) 0 .3 6 (.0 1 4 ) 3X M B A M 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 ) 2 .5 4 (.1 0 0) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE 8 PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 3 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. 8.89 (.3 50 ) LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE www.irf.com PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L 9 http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE 10 PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com http://store.iiic.cc/ IRFB/IRFS/IRFSL52N15D D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 .6 5 ( .0 6 5 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) 1 5 .42 (.60 9 ) 1 5 .22 (.60 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 .75 (.06 9 ) 1 .25 (.04 9 ) 1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) F E E D D IR E C T IO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4 3 30 .00 ( 14.1 73 ) MAX. Notes: 6 0.0 0 (2.36 2) M IN . N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E. 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30.4 0 (1.19 7) M A X. 4 Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. as Coss while VDS is rising from 0 to 80% VDSS. Starting TJ = 25C, L = 0.72mH This is only applied to TO-220AB package. RG = 25, IAS = 36A. This is applied to D2Pak, when mounted on 1" square PCB ISD 36A, di/dt 400A/s, VDD V(BR)DSS, (FR-4 or G-10 Material ). For recommended footprint and soldering TJ 175C. techniques refer to application note #AN-994. Pulse width 300s; duty cycle 2%. TO-220 package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] (IRFB52N15D), & Industrial (IRFS/SL52N15D) market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/02 www.irf.com 11 http://store.iiic.cc/ Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ http://store.iiic.cc/