DS-25DF512C–03 0C –2 /20 15
Features
Single 1.65V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual Output Read
104MHz Maximum Operating Frequency
Clock-to-Output (tV) of 6 ns
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Uniform 256-Byte Page erase
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Sectors via WP Pin
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique ide ntifier
64 bytes user programmable
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
1.5ms Typical Page Program (256 Bytes) Time
50ms Typical 4-Kbyte Block Erase Time
350ms Typical 32-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
200nA Ultra Deep Power Down current (Typical)
5µA Deep Power-Down Current (Typical)
25uA Standby current (Typical)
4.5mA Active Read Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Temperature Range:-10°C to +85°C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V)
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil)
8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
8-lead TSSOP Package
AT25DF512C
512-Kbit, 1.65V Minimum
SPI Serial Flash Memory with Dual-Read Support
PRELIMINARY DATASHEET
2
AT25DF512C
DS-25DF512C–030C–2/2015
1. Description
The Adesto® AT25DF512C is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer
based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT25DF512C, with its page erase granularity it is ideal for data storage as well, eliminating the
need for additional data storage devices.
The erase block sizes of the AT25DF512C h ave been optimized to meet the needs of today's code and data storage app lications.
By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules
and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that
occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space
efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device
density.
The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as
unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in many different systems, the AT25DF512C supports read, program, and erase operations with a
wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing.
2. Pin Descriptions and Pinouts
Table 2-1. Pin Descriptions
Symbol Name and Function Asserted
State Type
CS
CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in standby mo de (not Deep Power-Down
mode), and the SO pin will be in a high-impedance state. When the device is deselected,
data will not be accepted on the SI pin.
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation
such as a program or erase cycle, the device will not enter the standby mode until the
completion of the operation.
Low Input
SCK
SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the
flow of data to and from the device. Command, address, and input data present on the SI pin
is always latched in on the rising edge of SCK, while output data on the SO pin is always
clocked out on the falling edge of SCK.
-Input
SI (I/O0)
SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data
input including command and address sequences. Data on the SI pin is always latched in on
the rising edge of SCK.
With the Dual-Output Read commands, the SI Pin becomes an output pin (I/O0) in
conjunction with other pins to allow two bits of data on (I/O1-0) to be clocked out on every
falling edge of SCK
To maintain consistency with the SPI nomenclature, the SI (I/O0) pin will be referenced as
the SI pin unless specifically addressing the Dual-I/O modes in which case it will be
referenced as I/O0
Data present on the SI pin will be ignored whenever the device is dese lected (CS is
deasserted).
-Input/Output
3
AT25DF512C
DS-25DF512C–030C–2/2015
SO (I/O1)
SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin
is always clocked out on the falling edge of SCK.
With the Dual-Output Read commands, the SO Pin remains an output pin (I/O1) in
conjunction with other pins to allow two bits of data on (I/O1-0) to be clocked out on every
falling edge of SCK.
To maintain consistency with the SPI nomenclature, the SO (I/O1) pin will be referenced as
the SO pin unless specifically addressing th e Dual-I/O modes in which case it will be
referenced as I/O1.
The SO pin will be in a high-impedance state whenever the device is deselected (CS is
deasserted).
-Input/Output
WP
WRITE PROTECT: The WP pin controls the hardware locking fea ture of the device. Please
refer to “Protection Commands and Featu r es” on page 12 for more details on protection
features and the WP pin.
The WP pin is internally pulled-high and may be left floating if hardware controlled protection
will not be used. However, it is recommended that the WP pin also be externally connected
to VCC whenever possible.
Low Input
HOLD
HOLD: The HOLD pin is used to tempor arily pause serial communication without
deselecting or resetting the device. While the HOLD pin is asserted, transitions on the SCK
pin and data on the SI pin will be ignored, and the SO pin will be in a high-impedance state.
The CS pin must be asserted, and the SCK pin must be in the low state in order for a
Hold condition to start. A Hold condition pauses serial communication only and does
not have an effect on internally self-timed operations such as a program or erase cycle.
Please refer to “Hold” on page 27 for additional details on the Hold operation.
The HOLD pin is internally pulled-high and may be left floating if the Hold function will not be
used. However, it is recommended that the HOLD pin also be externally connected to VCC
whenever possible.
Low Input
VCC
DEVICE POWER SUPPLY: The VCC pin is used to supply the source voltage to the device.
Operations at invalid VCC voltages may produce spurious results and should not be
attempted. -Power
GND GROUND: The ground refe rence for the power supp ly. GND should be connected to the
system ground. -Power
Table 2-1. Pin Descriptions (Continued)
Symbol Name and Function Asserted
State Type
4
AT25DF512C
DS-25DF512C–030C–2/2015
3. Block Diagram
Figure 3-1. Block Di agram
Figure 2-1. 8-SOI C Top Vie w
Figure 2-2. 8-T S SOP Top View
Figure 2-3. 8-UDFN (Top View)
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
CS
SO
WP
GND
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
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AT25DF512C
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4. Memory Array
To provide the greatest flexibility, the memory array of the AT25DF512C can be erased in three levels of granularity
including a full chip erase. The size of the erase blocks is optimized for both code and data storage applications, allowing
both code and data segments to reside in their own erase regions. The Memory Architecture Diagram illustrates the
breakdown of each erase level.
Figure 4-1. Memory Architecture Diagram
5. Device Operation
The AT25DF512C is controlled by a set of instructions that are sent from a host controller, commonly referred to as the
SPI Master. The SPI Master communicates with the AT25DF512C via the SPI bus which is comprised of four signal lines:
Chip Select (CS), Serial Clock (SCK), Serial Input (SI), and Serial Output (SO).
The SPI protocol defines a total of four modes of operation (mode 0, 1, 2, or 3) with each mode differing in respect to the
SCK polarity and phase and how the polarity and phase control the flow of data on the SPI bus. The AT25DF512C
supports the two most common modes, SPI Modes 0 and 3. The only difference between SPI Modes 0 and 3 is the
polarity of the SCK signal when in the inactive state (when the SPI Master is in standby mode and not transferring any
data). With SPI Modes 0 and 3, data is always latched in on the rising edge of SCK and always output on the falling edge
of SCK.
32KB 4KB 1-256 Byte
Block Erase Block Erase Page Program
(52h Command) (20h Command) (02h Command)
4KB 00FFFFh – 00F000h 256 Bytes 00FFFFh – 00FF00h
4KB 00EFFFh – 00E000h 256 Bytes 00FEFFh – 00FE00h
4KB 00DFFFh – 00D000h 256 Bytes 00FDFFh – 00FD00h
4KB 00CFFFh – 00C000h 256 Bytes 00FCFFh – 00FC00h
4KB 00BFFFh – 00B000h 256 Bytes 00FBFFh – 00FB00h
4KB 00AFFFh – 00A000h 256 Bytes 00FAFFh – 00FA00h
4KB 009FFFh – 009000h 256 Bytes 00F9FFh – 00F900h
4KB
4KB
4KB 006FFFh – 006000h 256 Bytes 0006FFh – 000600h
4KB 005FFFh – 005000h 256 Bytes 0005FFh – 000500h
4KB 004FFFh – 004000h 256 Bytes 0004FFh – 000400h
4KB 003FFFh – 003000h 256 Bytes 0003FFh – 000300h
4KB 002FFFh – 002000h 256 Bytes 0002FFh – 000200h
4KB 001FFFh – 001000h 256 Bytes 0001FFh – 000100h
4KB
008FFFh – 008000h
007FFFh – 007000h
000FFFh – 000000h 256 Bytes 0000FFh – 000000h
Block Erase Detail Page Program Detail
Page AddressBlock Address
RangeRange
32KB
32KB
• • •
6
AT25DF512C
DS-25DF512C–030C–2/2015
Figure 5-1. SPI Mode 0 and 3
5.1 Dual Output Read
The ATx features a Dual-Output Read mode that allow two bits of data to be clocked out of the device every clock cycle
to improve throughput. To accomplish this, both the SI and SO pins are utilized as outputs for the transfer of data bytes.
With the Dual-Output Read Array command, the SI pin becomes an output along with the SO pin.
6. Commands and Addressing
A valid instruction or operation must always be started by first asserting the CS pin. After the CS pin has been asserted,
the host controller must then clock out a valid 8-bit opcode on the SPI bus. Following the opcode, instruction dependent
information such as address and data bytes would then be clocked out by the host controller. All opcode, address, and
data bytes are transferred with the most-significant bit (MSB) first. An operation is ended by deasserting the CS pin.
Opcodes not supported by the AT25DF512C will be ignored by the device and no operation will be started. The device
will continue to ignore any data presented on the SI pin until the start of the next operation (CS pin being deasserted and
then reasserted). In addition, if the CS pin is deasserted before complete opcode and address information is sent to the
device, then no operation will be performed and the device will simply return to the idle state and wait for the next
operation.
Addressing of the device requires a total of three bytes of information to be sent, representing address bits A23-A0.
Since the upper address limit of the AT25DF512C memory array is 00FFFFh, address bits A23-A16 are always ignored
by the device.
SCK
CS
SI
SO
MSB LSB
MSB LSB
Table 6-1. Command Listing
Command Opcode Clock
Frequency Address
Bytes Dummy
Bytes Data
Bytes
Read Commands
Read Array 0Bh 0000 1011 Up to 104 MHz 3 1 1+
03h 0000 0011 Up to 33 MHz (1) 3 0 1+
Dual Output Read 3Bh 0011 1011 Up to 50 MHz 3 1 1+
Program and Erase Commands
Page Erase 81h 1000 0001 Up to 104 MHz 3 0 0
Block Erase (4 Kbytes) 20h 0010 0000 Up to 104 MHz 3 0 0
Block Erase (32 Kbytes) 52h 0101 0010 Up to 104 MHz 3 0 0
D8h 1101 1000 Up to 104 MHz 3 0 0
7
AT25DF512C
DS-25DF512C–030C–2/2015
7. Read Commands
7.1 Read Array
The Read Array command can be used to sequentially read a continuous stream of data from the device by simply
providing the clock signal once the initial starting address is specified. The device incorporates an internal address
counter that automatically increments every clock cycle.
Two opcodes (0Bh and 03h) can be used for the Read Array command. The use of each opcode depends on the
maximum clock frequency that will be used to read data from the device. The 0Bh opcode can be used at any clock
frequency up to the maximum specified by fCLK, and the 03h opcode can be used for lower frequency read operations up
to the maximum specified by fRDLF.
Chip Erase 60h 0110 0000 Up to 104 MHz 0 0 0
C7h 1100 0111 Up to 104 MHz 0 0 0
Chip Erase (Legacy Command) 62h 0110 0010 Up to 104 MHz 0 0 0
Byte/Page Program (1 to 256 Bytes) 02h 0000 0010 Up to 104 MHz 3 0 1+
Protection Commands
Wr ite Enable 06h 0000 0110 Up to 104 MHz 0 0 0
Write Disable 04h 0000 0100 Up to 104 MHz 0 0 0
Security Commands
Program OTP Security Register 9Bh 1001 1011 Up to 104 MHz 3 0 1+
Read OTP Security Register 77h 0111 0111 Up to 104 MHz 3 2 1+
Status Register Commands
Read Status Register 05h 0000 0101 Up to 104 MHz 0 0 1+
Wr it e Status R eg i ste r B yte 1 01h 0000 0001 Up to 104 MHz 0 0 1
Wr it e Status R eg i ste r B yte 2 31h 0011 0001 Up to 104 MHz 0 0 1
Miscellaneous Commands
Reset F0h 1111 0000 Up to 104 MHz 0 0 1(D0h)
Read Manufacturer and Device ID 9Fh 1001 1111 Up to 104 MHz 0 0 1 to 4
Read ID (Legacy Command) 15h 0001 0101 Up to 104 MHz 0 0 2
Deep Power-Down B9h 1011 1001 Up to 104 MHz 0 0 0
Resume from Deep Power-Down ABh 1010 1011 Up to 104 MHz 0 0 0
Ultra Deep Power-Down 79h 0111 1001 Up to 104 MHz 0 0 0
1. Varies by voltage range. See Table 13.4 “AC Characteristics - Maximum Clock Frequencies”.
Table 6-1. Command Listing
Command Opcode Clock
Frequency Address
Bytes Dummy
Bytes Data
Bytes
8
AT25DF512C
DS-25DF512C–030C–2/2015
To perform the Read Array operation, the CS pin must first be asserted and the appropriate opcode (0Bh or 03h) must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
starting address location of the first byte to read within the memory array. Following the three address bytes, an
additional dummy byte needs to be clocked into the device if the 0Bh opcode is used for the Read Array operation.
After the three address bytes (and the dummy byte if using opcode 0Bh) have been clocked in, additional clock cycles
will result in data being output on the SO pin. The data is always output with the MSB of a byte first. When the last byte
(00FFFFh) of the memory array has been read, the device will continue reading back at the beginning of the array
(000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the array.
Deasserting the CS pin will terminate the read operation and put the SO pin into high-impedance state. The CS pin can
be deasserted at any time and does not require a full byte of data be read.
Figure 7-1. Read Array - 03h Opcode
Figure 7-2. Read Array - 0Bh Opcode
7.2 Dual-Output Read Array
The Dual-Output Read Array command is similar to the standard Read Array command and can be used to sequentially
read a continuous stream of data from the device by simply providing the clock signal once the initial starting address has
been specified. Unlike the standard Read Array command, however, the Dual-Output Read Array command allows two
bits of data to be clocked out of the device on every clock cycle, rather than just one.
The Dual-Output Read Array command can be used at any clock frequency, up to the maximum specified by fRDDO. To
perform the Dual-Output Read Array operation, the CS pin must first be asserted and then the opcode 3Bh must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
location of the first byte to read within the memory array. Following the three address bytes, a single dummy byte must
also be clocked into the device.
After the three address bytes and the dummy byte have been clocked in, additional clock cycles will result in data being
output on both the SO and SIO pins. The data is always output with the MSB o f a byte first and the MSB is always output
on the SO pin. During the first clock cycle, bit seven of the first data byte is output on the SO pin, while bit six of the same
data byte is output on the SIO pin. During the next clock cycle, bits five and four of the first data byte are output on the SO
SCK
CS
SI
SO
MSB MSB
2310
00000011
675410119812 373833 36353431 3229 30 39 40
OPCODE
AAAA AAAA A
MSB MSB
DDDDDDDDDD
ADDRESS BITS A23-A0
DATA BYTE 1
HIGH-IMPEDANCE
K
S
I
O
MSB MSB
2310
00001011
675410119812 394243414037 3833 36353431 3229 30 44 47 484645
OPCODE
AAAA AAAA A
MSB
XXXXXXXX
MSB MSB
DDDDDDDDDD
ADDRESS BITS A23-A0 DON'T CARE
DATA BYTE 1
HIGH-IMPEDANCE
9
AT25DF512C
DS-25DF512C–030C–2/2015
and SIO pins, respectively. The sequence continues with each byte of data being output after every four clock cycles.
When the last byte (00FFFFh) of the memory array has been read, the device will continue reading from the beginning of
the array (000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the
array.Deasserting the CS pin will terminate t he read operation and put the SO and SIO pins into a high-impedance state.
The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Figure 7-3. Dual-Output Read Array
8. Program and Erase Commands
8.1 Byte/Page Program
The Byte/Page Program command allows anywhere from a single byte of data to 256 bytes of data to be programmed
into previously erased memory locations. An erased memory location is one that has all eight bits set to the logical “1”
state (a byte value of FFh). Before a Byte/Page Program command can be started, the Write Enable command must
have been previously issued to the device (see “Write Enable” on page 12) to set the Write Enable Latch (WEL) bit of the
Status Register to a logical “1” state.
To perform a Byte/Page Program command, an opcode of 02h must be clocked into the device followed by the three
address bytes denoting the first byte location of the memory array to begin programming at. After the address bytes have
been clocked in, data can then be clocked into the device and will be stored in an internal buffer.
If the starting memory address denoted by A23-A0 does not fall on an even 256-byte page boundary (A7-A0 are not all
0), then special circumstances regarding which memory locations to be programmed will apply. In this situation, any data
that is sent to the device that goes beyond the end of the page will wrap around back to the beginning of the same page.
For example, if the starting address denoted by A23-A0 is 0000FEh, and three bytes of data are sent to the device, t hen
the first two bytes of data will be programmed at addresses 0000FEh and 0000FFh while the last byte of data will be
programmed at address 000000h. The remaining bytes in the page (addresses 000001h through 0000FDh) will not be
programmed and will remain in the erased state (FFh). In addition, if more than 256 bytes of data are sent to the device,
then only the last 256 bytes sent will be latched into the internal buffer.
When the CS pin is deasserted, the device will take the data stored in the internal buffer and program it into the
appropriate memory array locations based on the starting address specified by A23-A0 and the number of data bytes
sent to the device. If less than 256 bytes of data were sent to the device, then the remaining bytes within the page will not
be programmed and will remain in the erased state (FFh). The programming of the data bytes is internally self-timed and
should take place in a time of tPP or tBP if only programming a single byte.
The three address bytes and at least one complete byte of data must be clocked into the device before the CS pin is
deasserted, and the CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device
will abort the operation and no data will be programmed into the memory array. In addition, if the memory is in the
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AT25DF512C
DS-25DF512C–030C–2/2015
protected state (see “Block Protection” on page 13), then the Byte/Page Program command will not be executed, and the
device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset
back to the logical “0” state if the program cycle aborts due to an incomplete address being sent, an incomplete byte of
data being sent, the CS pin being deasserted on uneven byte boundaries, or because the memory location to be
programmed is protected.
While the device is programming, the Status Register can be read and will indicate that the device is busy. For faster
throughput, it is recommended that the Status Register be polled rather than waiting the tBP or tPP time to determine if the
data bytes have finished programming. At some point before the program cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program
properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.
Figure 8-1. Byte Progra m
Figure 8-2. Page Program
8.2 Page Erase
The Page Erase command can be used to individually erase any page in the main memory array. The Main Memory
Byte/Page Program command can be utilized at a later time.
To perform a Page Erase with the standard page size (256 bytes), an opcode of 81h must be clocked into the device
followed by three address bytes comprised of eight dummy bits, 8 page address bits (PA7 - PA0) that specify the page in
the main memory to be erased, and eight dummy bits.
When a low-to-high transition occurs on the CS pin, the device will erase the selected page (the erased state is a Logic
1). The erase operation is internally self-timed and should take place in a maximum time of tPE. During this time, the
RDY/BUSY bit in the Status Register will indicate that the device is busy.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If
an erase error arises, it will be indicated by the EPE bit in the Status Register.
SCK
CS
SI
SO
MSB MSB
2310
00000010
675410119812 3937 3833 36353431 3229 30
OPCODE
HIGH-IMPEDANCE
AAAA AAAA A
MSB
DDDDDDDD
ADDRESS BITS A23-A0 DATA IN
SCK
CS
SI
SO
MSB MSB
2310
00000010
6754983937 3833 36353431 3229 30
OPCODE
HIGH-IMPEDANCE
AA AAAA
MSB
DDDDDDDD
ADDRESS BITS A23-A0 DATA IN BYTE 1
MSB
DDDDDDDD
DATA IN BYTE n
11
AT25DF512C
DS-25DF512C–030C–2/2015
8.3 Block Erase
A block of 4 or 32 Kbytes can be erased (all bits set to the logical “1” state) in a single operation by using one of three
different opcodes for the Block Erase command. An opcode of 20h is used for a 4-Kbyte erase, and an opcode of 52h or
D8h is used for a 32-Kbyte erase. Before a Block Erase command can be started, the Write Enable command must have
been previously issued to the device to set the WEL bit of the Status Register to a logical “1” state.
To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h, 52h, or D8h) must be
clocked into the device. After the opcode has been clocked in, the three address bytes specifying an address within the
4- or 32-Kbyte block to be erased must be clocked in. Any additional data clocked into the device will be ignored. When
the CS pin is deasserted, the device will erase the appropriate block. The erasing of the block is internally self-timed and
should take place in a time of tBLKE.
Since the Block Erase command erases a region of bytes, the lower order address bits do not need to be decoded by the
device. Therefore, for a 4-Kbyte erase, address bits A11-A0 will be ignored by the device and their values can be either a
logical “1” or “0”. For a 32-Kbyte erase, address bits A14-A0 will be ignored by the device. Despite the lower order
address bits not being decoded by the device, the complete three address bytes must still be clocked into the device
before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);
otherwise, the device will abort the operation and no erase operation will be performed.
If the memory is in the protected state, then the Block Erase command will not be executed, and the device will return to
the idle state once the CS pin has been deasserted.
The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle aborts due to an incomplete
address being sent, the CS pin being deasserted on uneven byte boundaries, or because a memory location within the
region to be erased is protected.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device
is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tBLKE time to
determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If
an erase error occurs, it will be indicated by the EPE bit in the Status Register.
Figure 8-3. Block Erase
8.4 Chip Erase
The entire memory array can be erased in a single operation by using the Chip Erase command. Before a Chip Erase
command can be started, the Write Enable command must have been previously issued to the device to set the WEL bit
of the Status Register to a logical “1” state.
Three opcodes (60h, 62h, and C7h) can be used for the Chip Erase command. There is no difference in device
functionality when utilizing the three opcodes, so they can be used interchangeably. To perform a Chip Erase, one of the
three opcodes must be clocked into the device. Since the entire memory array is to be era sed, no address bytes need to
be clocked into the device, and any data clocked in after the o pcode will be ignored. When t he CS pin is deasserted, the
SCK
CS
SI
SO
MSB MSB
2310
CCCCCCCC
675410119812 3129 3027 2826
OPCODE
AAAA AAAA A A A A
ADDRESS BITS A23-A0
HIGH-IMPEDANCE
12
AT25DF512C
DS-25DF512C–030C–2/2015
device will erase the entire memory array. The erasing of the device is internally self-timed and should take place in a
time of tCHPE.
The complete opcode must be clocked into the device before the CS pin is deasserted, and the CS pin must be
deasserted on an even byte boundary (multiples of eight bits); otherwise, no erase will be performed. In addition, if the
memory array is in the protected state, then the Chip Erase command will not be executed, and the device will return to
the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to the logical
“0” state if the CS pin is deasserted on uneven byte boundaries or if the memory is in the protected state.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device
is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tCHPE time to
determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If
an erase error occurs, it will be indicated by the EPE bit in the Status Register.
Figure 8-4. Chip Erase
9. Protection Commands and Features
9.1 Write Enable
The Write Enable command is used to set the Write Enable Latch (WEL) bit in the Status Register to a logical “1” state.
The WEL bit must be set before a Byte/Page Program, erase, Program OTP Security Register, or Write Status Register
command can be executed. This makes the issuance of these commands a two step process, thereby reducing the
chances of a command being accidentally or erroneously executed. If the WEL bit in the Status Register is not set prior to
the issuance of one of these commands, then the command will not be executed.
To issue the Write Enable command, the CS pin must first be asserted and the opcode of 06h must be clocked into the
device. No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored.
When the CS pin is deasserted, the WEL bit in the Status Register will be set to a logical “1”. The complete opcode must
be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of the WEL bit will not
change.
SCK
CS
SI
SO
MSB
2310
CCCCCCCC
6754
OPCODE
HIGH-IMPEDANCE
13
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Figure 9-1. Write Enable
9.2 Write Disable
The Write Disable command is used to reset the Write Enable Latch (WEL) bit in the Status Register to the logical “0”
state. With the WEL bit reset, all Byte/Page Program, erase, Program OTP Security Register, and Write Status Register
commands will not be executed. Other conditions can also cause the WEL bit to be reset; for more details, refer to the
WEL bit section of the Status Register description.
To issue the Write Disable command, the CS pin must first be asserted and the opcode of 04h must be clocked into the
device. No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored.
When the CS pin is deasserted, the WEL bit in the Status Register will be reset to a logical “0”. The complete opcode
must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of the WEL bit will not
change.
Figure 9-2. Write Disable
9.3 Block Protection
The device can be software protected against erroneous or malicious program or erase operations by utilizing the Block
Protection feature of the device. Block Protection can be enabled or disabled by using the Write Status Register
command to change the value of the Block Protection (BP0) bit in the Status Register. The following table outlines the
two states of the BP0 bit and the associated protection area
.
SCK
CS
SI
SO
MSB
2310
00000110
6754
OPCODE
HIGH-IMPEDANCE
SCK
CS
SI
SO
MSB
2310
00000100
6754
OPCODE
HIGH-IMPEDANCE
Table 9-1. Memory Array Protection
Protection Level BP0 Protected Memo ry Addre s s
None 0None
Full Memory 100000h - 00FFFFh
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When the BP0 bit of the Status Register is in the logical “1” state, the entire memory array will be protected against
program or erase operations. Any attempts to send a Byte/Page Program command, a Block Erase command, or a Chip
Erase command will be ignored by the device.
As a safeguard against accidental or erroneous protecting or unprotecting of the memory array, the BP0 bit itself can be
locked from updates by using the WP pin and the BPL (Block Protection Locked) bit of the Status Register (see
“Protected States and the Write Protect Pin” on page 14 for more details).
The BP0 bit of the Status Register is a nonvolatile bit; therefore, the BP0 bit will retain its state even afte r the device has
been power cycled. Care should be taken to ensure that BP0 is in the logical “1” state before powering down for those
applications that wish to have the memory array fully protected upon power up. The default state for BP0 when shipped
from Adesto is “0”.
9.4 Protected States and the Write Protect Pin
The WP pin is not linked to the memo ry array itself and has no direct effect on the protectio n status of the memory array.
Instead, the WP pin, in conjunction with the BPL (Block Protection Locked) bit in the Status Register, is used to control
the hardware locking mechanism of the device. For hardware locking to be active, two conditions must be met-the WP
pin must be asserted and the BPL bit must be in the logical “1” state.
When hardware locking is active, the Block Protection (BP0) bit is locked and the BPL bit itself is also locked. Therefore,
if the memory array is protected, it will be locked in the protected state, and if the memory array is unprotected, it will be
locked in the unprotected state. These states cannot be changed as long as hardware locking is active, so the Write
Status Register command will be ignored. In order to modify the protection status of the memory array, the WP pin must
first be deasserted, and the BPL bit in the Status Register must be reset back to the logical “0” state using the Write
Status Register command.
If the WP pin is permanently connected to GND, then once the BPL b it is set to a logical “1”, the on ly way to reset the bit
back to the logical “0” state is to power-cycle the device. This allows a system to power-up with all sectors software
protected but not hardware locked. Therefore, sectors can be unprotected and protected as needed and then hardware
locked at a later time by simply setting the BPL bit in the Status Register.
When the WP pin is deasserted, or if the WP pin is permanently conne cted to VCC, the BPL bit in the Status Register can
be set to a logical “1”, but doing so will not lock the BP0 bit.
Table 9-2 details the various protection and locking states of the device.
Table 9-2. Hardware and Software Locking
WP BPL Locking BPL Change Allowed BP0 and Protection Sta t u s
0 0 Can be modified from 0 to 1 BP0 bit unlocked and modifiable using the Write
Status Register command. Memory array can be
protected and unprotected freely.
0 1 Hardware
Locked Locked
BP0 bit locked in current state. The Write Status
Register command will have no affect. Memory
array is locked in current protected or unprotected
state.
1 0 Can be modified from 0 to 1 BP0 bit unlocked and modifiable using the Write
Status Register command. Memory array can be
protected and unprotected freely.
1 1 Can be modified from 1 to 0 BP0 bit unlocked and modifiable using the Write
Status Register command. Memory array can be
protected and unprotected freely.
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10. Security Commands
10.1 Program OTP Security Register
The device contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such
as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. The OTP
Security Register is independent of the main Flash memory array and is comprised of a total of 128 bytes of memory
divided into two portions. The first 64 bytes (byte locations 0 through 63) of the OTP Security Register are allocated as a
one-time user-programmable space. Once these 64 bytes have been programmed, they cannot be erased or
reprogrammed. The remaining 64 bytes of the OTP Security Register (byte locations 64 through 127) are factory
programmed by Adesto and will contain a unique value for each device. The factory programmed data is fixed and
cannot be changed.
The user-programmable portion of the OTP Security Register does not need to be erased before it is programmed. In
addition, the Program OTP Security Register command operates on the entire 64-byte user-programmable portion of the
OTP Security Register at one time. Once the user-programmable space has been programmed with any number of
bytes, the user-programmable space cannot be programmed again; therefore, it is not possible to only program the first
two bytes of the register and then program the remaining 62 bytes at a later time.
Before the Program OTP Security Register command can be issued, the Write Enable command must have been
previously issued to set the WEL bit in the Status Register to a logical “1”. To program the OTP Security Register, the CS
pin must first be asserted and an opcode of 9Bh must be clocked into the device followed by the three address bytes
denoting the first byte location of the OTP Security Register to begin programming at. Since the size of the user-
programmable portion of the OTP Security Register is 64 bytes, the upper order address bits do not need to be decoded
by the device. Therefore, address bits A23-A6 will be ignored by the device and their values can be either a logical “1” or
“0”. After the address bytes have been clocked in, data can then be clocked into the device and will be stored in the
internal buffer.
If the starting memory address denoted by A23-A0 does not start at the beginning of the OTP Security Register memory
space (A5-A0 are not all 0), then special circumstances regarding which OTP Security Register locations to be
programmed will apply. In this situation, any data that is sent to the device that goes beyond the end of the 64-byte user-
programmable space will wrap around back to the beginning of the OTP Security Register. For example, if the starting
address denoted by A23-A0 is 00003Eh, and three bytes of data are sent to the device, then the first two bytes of data
will be programmed at OTP Security Register addresses 00003Eh and 00003Fh while the last byte of data will be
programmed at address 000000h. The remaining bytes in the OTP Security Register (addresses 000001h through
00003Dh) will not be programmed and will remain in the erased state (FFh). In addition, if more than 64 bytes of data are
sent to the device, then only the last 64 bytes sent will be latched into the internal buffer.
When the CS pin is deasserted, the device will take the data stored in the internal buffer and program it into the
appropriate OTP Security Register locations based on the starting address specified by A23-A0 and the number of data
bytes sent to the device. If less than 64 bytes of data were sent to the device, then the remaining bytes within the OTP
Security Register will not be programmed and will remain in the erased state (FFh). The programming of the data bytes is
internally self-timed and should take place in a time of tOTPP.
The three address bytes and at least one complete byte of data must be clocked into the device before the CS pin is
deasserted, and the CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device
Table 10-1. OTP Security Register
Security Register
Byte Number
0 1 . . . 62 63 64 65 . . . 126 127
One-Time User Programmable Factory Programmed by Adesto
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will abort the operation and the user-programmable portion of the OTP Security Register will not be programmed. The
WEL bit in the Status Register will be reset back to the logical “0” state if the OTP Security Register program cycle aborts
due to an incomplete address being sent, an incomplet e byte of data b eing sent, the CS pin being deasserted on uneven
byte boundaries, or because the user-programmable portion of the OTP Security Register was previously programmed.
While the device is programming the OTP Security Register, the Status Register can be read and will indicate that the
device is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tOTPP
time to determine if the data bytes have finished programming. At some point before the OTP Security Register
programming completes, the WEL bit in the Status Register will be reset back to the logical “0” state.
If the device is powered-down during the OTP Security Register program cycle, then the contents of the 64-byte user
programmable portion of the OTP Security Register cannot be guaranteed and cannot be programmed again.
The Program OTP Security Register command utilizes the internal 256-buffer for processing. Therefore, the contents of
the buffer will be altered from its previous state when this command is issued.
Figure 10-1. Program OTP Secu r ity Regis t e r
10.2 Read OTP Security Register
The OTP Security Register can be sequentially read in a similar fashion to the Read Array operation up to the maximum
clock frequency specified by fCLK. To read the OTP Security Register, the CS pin must first be asserted and the opcode
of 77h must be clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in
to specify the starting address location of the first byte to read within the OTP Security Register. Following the three
address bytes, two dummy bytes must be clocked into the device before data can be output.
After the three address bytes and the dummy bytes have been clocked in, additional clock cycles will result in OTP
Security Register data being output on the SO pin. When the last byte (00007Fh) of the OTP Security Register has been
read, the device will continue reading back at the beginning of the register (000000h). No delays will be incurred when
wrapping around from the end of the register to the beginning of the register.
Deasserting the CS pin will terminate the read operation and put the SO pin into a high-impedance state. The CS pin can
be deasserted at any time and does not require that a full byte of data be read.
SCK
CS
SI
SO
MSB MSB
2310
10011011
6754983937 3833 36353431 3229 30
OPCODE
HIGH-IMPEDANCE
AA AAAA
MSB
DDDDDDDD
ADDRESS BITS A23-A0 DATA IN BYTE 1
MSB
DDDDDDDD
DATA IN BYTE n
17
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Figure 10-2. Read OTP Security Register
11. Status Register Commands
11.1 Read Status Register
The Status Register can be read to determine the device’s ready/busy status, as well as the status of many other
functions such as Hardware Locking and Block Protection. The Status Register can be read at any time, including during
an internally self-timed program or erase operation.The Status Register consists of two bytes.
To read the Status Register, the CS pin must first be asserted and the opcode of 05h must be clocked into the device.
After the opcode has been clocked in, the device will begin outputting Status Register data on the SO pin during every
subsequent clock cycle. After the last bit (bit 0) of Status Register Byte 1 has been clocked out, the first bit (bit 7) of
Status Register Byte 2 will be clocked out. After the last bit (bit 0) of Status Register Byte 2 has been clocked out, the
sequence will repeat itself, starting again with bit 7 of Status Register Byte 1, as long as the CS pin remains asserted and
the clock pin is being pulsed. The data in the Status Register is constantly being updated, so each repeating sequence
will output new data.
Deasserting the CS pin will terminate the Read Status Register operation and put the SO pin into a high-impedance
state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
SCK
CS
SI
SO
MSB MSB
2310
01110111
675410119812 3336353431 3229 30
OPCODE
AAAA AAAAAXXX
MSB MSB
DDDDDDDDDD
ADDRESS BITS A23-A0
MSB
XXXXXX
DON'T CARE
DATA BYTE 1
HIGH-IMPEDANCE
Table 11-1. Status Register Format
Bit (1) Name Type (2) Description
7BPL Block Protection Locked R/W 0BP0 bit unlocked (default).
1BP0 bit locked in current state when WP asserted.
6RES Reserved for future use R 0 Reserved for future use.
5EPE Erase/Program Error R0Erase or program operation was successful.
1Erase or program error detected .
4WPP Write Protect (WP) Pin Status R0WP is asserted.
1WP is deasserted.
3RES Reserved for future use R 0 Reserved for future use.
2BP0 Block Protection R/W 0Entire memory array is unprotected.
1Entire memory array is protect ed.
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11.1.1 BPL Bit
The BPL bit is used to control whether the Block Protection (BP0) bit can be modified or not. When the BPL bit is in the
logical “1” state and the WP pin is asserted, the BP0 bit will be locked and cannot be modified. The memory array will be
locked in the current protected or unprotected state.
When the BPL bit is in the logical “0” state, the BP0 bit will be unlocked and can be modified. The BPL bit defaults to the
logical “0” state after device power-up.
The BPL bit can be modified freely whenever the WP pin is deasserted. However, if the WP pin is assert ed, then the BPL
bit may only be changed from a logical “0” (BP0 bit unlocked) to a logical “1” (BP0 bit locked). In order to reset the BPL bit
back to a logical “0” using the Write Status Register command, the WP pin will have to first be deasserted.
The BPL and BP0 bits are the only bits of the Status Register that can be user modified via the Write Status Register
command.
11.1.2 EPE Bit
The EPE bit indicates whether the last erase or program operation completed successfully or not. If at least one byte
during the erase or program operation did not erase or program properly, then the EPE bit will be set to the logical “1”
state. The EPE bit will not be set if an erase or program operation aborts for any reason such as an attempt to erase or
program the memory when it is protected or if the WEL bit is not set prior to an erase or program operation. The EPE bit
will be updated after every erase and program operation.
11.1.3 WPP Bit
The WPP bit can be read to determine if the WP pin has been asserted or not.
11.1.4 BP0 Bit
The BP0 bits provides feedback on the software protection status for the device. In addition, the BP0 bit can also be
modified to change the state of the software protection to allow the entire memory array to be protected or unprotected.
When the BP0 bit is in the logical “0” state, then the entire memory array is unprotected. When the BP0 bit is in the logical
“1” state, then the entire memory array is protected against program and erase operations.
11.1.5 WEL Bit
The WEL bit indicates the current status of the internal Write Enable Latch. When the WEL bit is in the logical “0” state,
the device will not accept any Byte/Page Program, erase, Program OTP Security Register, or Write Status Register
commands. The WEL bit defaults to the logical “0” state after a device power-up or reset operation. In addition, the WEL
bit will be reset to the logical “0” state automatically under the following conditions:
Write Disable operation completes successfully
Write Status Register operation completes successfully or aborts
1WEL Wri t e Enable Latch Status R0Device is not write enabled (default).
1Device is write enabled.
0RDY/BSY Ready/B usy Status R0Device is ready.
1Device is busy with an internal operation.
1. Only bits 7 and 2 of the Status Register can be modified when using the Write Status Register command.
2. R/W = Readable and writable
R = Readable only
Table 11-1. Status Register Format
Bit (1) Name Type (2) Description
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Program OTP Security Register operation completes successfully or aborts
Byte/Page Program operation completes successfully or aborts
Block Erase operation completes successfully or aborts
Chip Erase operation completes successfully or aborts
Hold condition aborts
If the WEL bit is in the logical “1” state, it will not be reset to a logical “0” if an operation aborts due to an incomplete or
unrecognized opcode being clocked into the device before the CS pin is deasserted. In order for the WEL bit to be reset
when an operation aborts prematurely, the entire opcode for a Byte/Page Program, erase, Program OTP Security
Register, or Write Status Register command must have been clocked into the device.
11.1.6 RDY/BSY Bit
The RDY/BSY bit is used to determine whether or not an internal operation, such as a program or erase, is in progress.
To poll the RDY/BSY bit to detect the completion of a program or erase cycle, new Status Register data must be
continually clocked out of the device until the state of the RDY/BSY bit changes from a logical “1” to a logical “0”.Note that
the RDY/BSY bit can be read either from Status Register Byte 1 or from Status Register Byte 2.
11.1.7 RSTE Bit
The RSTE bit is used to enable or disable the Reset command. When the RSTE bit is in the Logical 0 state (the default
state after power-up), the Reset command is disabled and any attempts to reset the device using the Reset command
will be ignored. When the RSTE bit is in the Logical 1 state, the Reset command is enabled.
The RSTE bit will retain its state as long as power is applied to the device. Once set to the Logical 1 state, the RSTE bit
will remain in that state until it is modified using the Write Status Register Byte 2 command or until the device has been
power cycled. The Reset command itself will not change the state of the RSTE bit.
Note: 1. Only bits 4 and 3 of Status Register Byte 2 will be modified when using the Write Status Register Byte 2 command
2. R/W = Readable and Writeable
R = Readable only.
Table 11-2. Status Register Format – Byte 2
Bit(1) Name Type(2) Description
7RES Reserved for future use R 0 Reserved for future use
6RES Reserved for future use R 0 Reserved for future use
5RES Reserved for future use R 0 Reserved for future use
4RSTE Reset Enabled R/W 0Reset command is disabled (default)
1Reset command is enabled
3RES Reserved for future use R 0 Reserved for future use
2RES Reserved for future use R 0 Reserved for future use
1RES Reserved for future use R 0 Reserved for future use
0RDY/BSY Ready/Busy Status R0Device is ready
1Device is busy with an internal operation
20
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Figure 11-1. Read Status Register
11.2 Write Status Register
The Write Status Register command is used to modify the BPL bit and the BP0 bit of the Status Register. Before the
Write Status Register command can be issued, the Write Enable command must have been previously issued to set the
WEL bit in the Status Register to a logical “1”.
To issue the Write Status Register command, the CS pin must first be asserted and the opcode of 01h must be clocked
into the device followed by one byte of data. The one byte of data consists of the BPL bit value, four don’t care bits, the
BP0 bit value, and two additional don’t care bits (see Table 11-3). Any additional data bytes that are sent to the device
will be ignored. When the CS pin is deasserted, the BPL bit and the BP0 bit in the Status Register will be modified, and
the WEL bit in the Status Register will be reset back to a logical “0”. The value of BP0 and the state of the BPL bit and the
WP pin before the Write Status Register command was executed (the prior state of the BPL bit and the state of the WP
pin when the CS pin is deasserted) will determine whether or not software protection will be changed. Please refer to
Section 9.4, “Protected States and the Write Protect Pin” on page 14 for more details.
The complete one byte of data must be clocked into the device be fore the CS p in is deasserted, and the CS pin must be
deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the operation, the state of
the BPL and BP0 bits will not change, memory protection status will not change, and the WEL bit in the Status Register
will be reset back to the logical “0” state.
If the WP pin is asserted, then the BPL bit can only be set to a logical “1”. If an attempt is made to reset the BPL bit to a
logical “0” while the WP pin is asserted, then the Write Status Register Byte command will be ignored, and the WEL bit in
the Status Register will be reset back to the logical “0” state. In order to reset the BPL bit to a logical “0”, the WP pin must
be deasserted.
SCK
CS
SI
SO
MSB
2310
00000101
675410119812 212217 20191815 1613 14 23 24
OPCODE
MSB MSB
DDDDDD DDDD
MSB
DDDDDDDD
STATUS REGISTER BYTE1 STATUS REGISTER BYTE2
HIGH-IMPEDANCE
Table 11-3. Write Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
BPL XXXXBP0 X X
21
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Figure 11-2. Write Status Register
11.3 Write Status Register Byte 2
The Write Status Register Byte 2 command is used to modify the RSTE. Using the Write Status Register Byte 2
command is the only way to modify the RSTE in the Status Register during normal device operation. Before the Write
Status Register Byte 2 command can be issued, the Write Enable command must have been previously issued to set the
WEL bit in the Status Register to a Logical 1.
To issue the Write Status Register Byte 2 command, the CS pin must first be asserted and then the opcode 31h must be
clocked into the device followed by one byte of data. The one byte of data consists of three don’t-care bits, the RSTE bit
value, and four additional don’t-care bits (see Table 11-4). Any additional data bytes sent to the device will be ignored.
When the CS pin is deasserted, the RSTE bit in the Status Register will be modified, and the WEL bit in the Status
Register will be reset back to a Logical 0.
The complete one byte of data must be clocked into the device be fore the CS p in is deasserted, and the CS pin must be
deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the operation, the state of
the RSTE bit will not change, and the WEL bit in the Status Register will be reset back to the Logical 0 state.
Figure 11-3. Write Status Register Byte 2
SCK
CS
SI
SO
MSB
2310
0000000
6754
OPC ODE
10 119814151312
1
MSB
DXXXXDXX
STATUS REGISTER IN
HIGH-IMPEDANCE
Table 11-4. Write Status Register Byte 2 Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
X X X RSTE X X X X
SCK
CS
SI
SO
MSB
2310
0011000
6754
Opcode
10 119814151312
1
MSB
XXXDXXXX
Status Register In
Byte 2
High-impedance
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12. Other Commands and Functions
12.1 Read Manufacturer and Device ID
Identification information can be read from the device to enable systems to electronically query and identify the device
while it is in system. The identification method and the command opcode comply with the JEDEC standard for
“Manufacturer and Device ID Read Methodology for SPI Compatible Serial Interface Memory Devices”. The type of
information that can be read from the device includes the JEDEC defined Manufacturer ID, the vendor specific Device ID,
and the vendor specific Extended Device Information.
Since not all Flash devices are capable of operating at very high clock frequencies, applications should be designed to
read the identification information from the devices at a reasonab ly low clock frequency to ensure all devices used in the
application can be identified properly. Once the identification process is complete, the application can increase the clock
frequency to accommodate specific Flash devices that are capable of operating at the higher clock frequencies.
To read the identification information, the CS pin must first be asserted and the opcode of 9Fh must be clocked into the
device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during
the subsequent clock cycles. The first byte that will be output will be the Manufacturer ID followed by two bytes of Device
ID information. The fourth byte output will be the Extended Device Information String Length, which will be 00h indicating
that no Extended Device Information follows. After the Extended Device Information String Length byte is output, the SO
pin will go into a high-impedance state; therefore, additional clock cycles will have no affect on the SO pin and no data
will be output. As indicated in the JEDEC standard, reading the Extended Device Information String Length and any
subsequent data is optional.Deasserting the CS pin will terminate the Manufacturer and Device ID read operation and
put the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not require that a full
byte of data be read.
Table 12-1. Manufacturer and Device ID Information
Byte No. Data Type Value
1Manufacturer ID 1Fh
2Device ID (Part 1) 65h
3Device ID (Part 2) 01h
4Extended Device Information String Length 00h
Table 12-2. Manufacturer and Device ID Details
Data Type Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
Hex
Valu
eDetails
Manufacturer ID JEDEC Assigned Code 1Fh JEDEC Code: 0001 1111 (1Fh for Adesto)
0 0 0 1 1 1 1 1
Device ID (Part
1)
Family Code Density Code 65h Family Code: 011 (AT25F/AT25FSxxx series)
Density Code: 00101 (512-Kbit)
0 1 1 0 0 1 0 1
Device ID (Part
2)
Sub Code Product Version Code 01h Sub Code: 000 (Standard series)
Product Version:00001
0 0 0 0 0 0 0 1
23
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Figure 12-1. Read Manufacturer and Device ID
12.2 Read ID (Legacy Command)
Identification information can be read from the device to enable systems to electronically query and identify the device
while it is in system. The preferred method for doing so is the JEDEC standard “Read Manufacturer and Device ID”
method described in Section 12.1 on page 22; however, the legacy Read ID command is supported on the AT25DF512C
to enable backwards compatibility to previous generation devices.
To read the identification information, the CS pin must first be asserted and the opcode of 15h must be clocked into the
device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during
the subsequent clock cycles. The first byte that will be output will be the Manufacturer ID of 1Fh followed by a single byte
of data representing a device code of 65h. After the device code is output, the SO pin will go into a high-impendance
state; therefore, additional clock cycles will have no affect on the SO pin and no data will be output.
Deasserting the CS pin will terminate the Read ID operation and put the SO pin into a high-impedance state. The CS pin
can be deasserted at any time and does not require that a full byte of data read.
Figure 12-2. Read ID (Legacy Command)
12.3 Deep Power-Down
During normal operation, the device will be placed in the standby mode to consume less power as long as the CS pin
remains deasserted and no internal operation is in progress. The Deep Power-Down command offers the ability to place
the device into an even lower power consumption state called the Deep Power-Down mode.
SCK
CS
SI
SO
60
9Fh
87 38
OPCODE
1Fh 65h 01h 00h
MANUFACTURER ID DEVICE ID
BYTE 1
DEVICE ID
BYTE 2
EXTENDED
DEVICE
INFORMATION
STRING LENGTH
HIGH-IMPEDANCE
14 1615 22 2423 30 3231
Note: Each transition shown for SI and SO represents one byte (8 bits)
SCK
CS
SI
SO
MSB
2310
00010101
675410119812 212217 20191815 1613 14
OPCODE
MSB
01111100
MSB
10010110
MANUFACTURER
ID
DEVICE
CODE
HIGH-IMPEDANCE
24
AT25DF512C
DS-25DF512C–030C–2/2015
When the device is in the Deep Power-Down mode, all commands including the Read Status Register command will be
ignored with the exception of the Resume from Deep Power-Down command. Since all commands will be ignored, the
mode can be used as an extra protection mechanism against program and erase operations.
Entering the Deep Power-Down mode is accomplished by simply asserting the CS pin, clocking in the opcode of B9h,
and then deasserting the CS pin. Any additional data clocked into the device after the opcode will be ignored. When the
CS pin is deasserted, the device will enter the Deep Power-Down mode within the maximum time of tEDPD.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on an
even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and return to the standby mode
once the CS pin is deasserted. In addition, the device will default to the standby mode after a power-cycle.
The Deep Power-Down command will be ignored if an internally self-timed operation such as a program or erase cycle is
in progress. The Deep Power-Down command must be reissued after the internally self-timed operation has been
completed in order for the device to enter the Deep Power-Down mode.
Figure 12-3. Deep Power-Down
12.4 Resume from Deep Power-Down
In order to exit the Deep Power-Down mode and resume normal device operation, the Resume from Deep Power-Down
command must be issued. The Resume from Deep Power-Down command is the only command that the device will
recognized while in the Deep Power-Down mode.
To resume from the Deep Power-Down mode, the CS pin must first b e asserted and opcode of ABh must be clocked into
the device. Any additional data clocked into the device after the opcode will be ignored. When the CS pin is deasserted,
the device will exit the Deep Power-Down mode within the maximum time of tRDPD and return to the standby mode. After
the device has returned to the standby mode, normal command operations such as Read Array can be resumed.
If the complete opcode is not clocked in before the CS pin is deasserted, or if the CS pin is not deasserted on an even
byte boundary (multiples of eight bits), then the device will abort the operation and return to the Deep Power-Down
mode.
SCK
CS
SI
SO
MSB
I
CC
2310
10111001
6754
OPCODE
HIGH-IMPEDANCE
Standby Mode Current
Active Current
Deep Power-Down Mode Current
t
EDPD
25
AT25DF512C
DS-25DF512C–030C–2/2015
Figure 12-4. Resume from De ep Powe r -D own
12.5 Ultra-Deep Power-Down
The Ultra-Deep Power-Down mode allows the device to further reduce its energy consumption compared to the existing
standby and Deep Power-Down modes by shutting down additional internal circuitry. When the device is in the Ultra-
Deep Power-Down mode, all commands including the Status Register Read and Resume from Deep Power-Down
commands will be ignored. Since all commands will be ignored, the mode can be used as an extra protection mechanism
against inadvertent or unintentional program and erase operations. Entering the Ultra-Deep Power-Down mode is
accomplished by simply asserting the CS pin, clocking in the opcode 79h, and then deasserting the CS pin. Any
additional data clocked into the device after the opcode will be ignored. When the CS pin is deasserted, the device will
enter the Ultra-Deep Power-Down mode within the maximum time of tEUDPD
The complete opcode must be clocked in before the CS pin is deasserted; otherwise, the device will abort the operation
and return to the standby mode once the CS pin is deasserted. In addition, the device will default to the standby mode
after a power cycle. The Ultra-Deep Power-Down command will be ignored if an internally self-timed operation such as a
program or erase cycle is in progress.
Figure 12-5. Ultra-Deep Power-Down
SCK
CS
SI
SO
MSB
ICC
2310
10101011
6754
OPCODE
HIGH-IMPEDANCE
Deep Power-Down Mode Current
Active Current
Standby Mode Current
t
RDPD
SCK
CS
SI
SO
MSB
ICC
2310
0
6754
Opcode
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
tEUDPD
1111001
26
AT25DF512C
DS-25DF512C–030C–2/2015
12.6 Exit Ultra-Deep Power-Down
To exit from the Ultra-Deep Power-Down mode, any one of three operations can be performed:
Chip Select Toggle
The CS pin must simply be pulsed by asserting the CS pin, waiting the minimum necessary tCSLU time, and then
deasserting the CS pin again. To facilitate simple software development, a dummy byte opcode can also be entered
while the CS pin is being pulsed; the dummy byte opcode is simply ignored by the device in this case. After the CS pin
has been deasserted, the device will exit from the Ultra-Deep Power-Down mode and return to the standby mode within
a maximum time of tXUDPD If the CS pin is reasserted before the tXUDPD time has elapsed in an attempt to start a new
operation, then that operation will be ignored and nothing will be performed.
Figure 12-6. Exit Ultra-Deep Power-Down (Chi p Sel ec t Tog gl e)
Chip Select Low
By asserting the CS pin, waiting the minimum necessary tXUDPD time, and then clocking in the first bit of the next Opcode
command cycle. If the first bit of the next command is clocked in before the tXUDPD time has elapsed, the device will exit
Ultra Deep Power Down, however the intended operation will be ignored.
Figure 12-7. Exit Ultra-Deep Power-Down (Chip S elec t Low )
Power Cycling
The device can also exit the Ultra Deep Power Mode by power cycling the device. The system must wait for the device to
return to the standby mode before normal command operations can be resumed. Upon recovery from Ultra Deep Power
Down all internal registers will be at there Power-On default state.
CS
SO
I
CC
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
tXUDPD
tCSLU
CS
SO
I
CC
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
tXUDPD
27
AT25DF512C
DS-25DF512C–030C–2/2015
12.7 Hold
The HOLD pin is used to pause the serial communication with the device without having to stop or reset the clock
sequence. The Hold mode, however, does not have an affect on any internally self-timed operations such as a program
or erase cycle. Therefore, if an erase cycle is in progress, asserting the HOLD pin will not pause the operation, and the
erase cycle will continue until it is finished.
The Hold mode can only be entered while the CS pin is asserted. The Hold mode is activated simply by asserting the
HOLD pin during the SCK low pulse. If the HOLD pin is asserted during the SCK high pulse, then the Hold mode won’t be
started until the beginning of the next SCK low pulse. The device will remain in the Hold mode as long as the HOLD pin
and CS pin are asserted.
While in the Hold mode, the SO pin will be in a high-impedance state. In addition, both the SI pin and the SCK pin will be
ignored. The WP pin, however, can still be asserted or deasserted while in the Hold mode.
To end the Hold mode and resume serial communication, the HOLD pin must be deasserted during the SCK low pulse. If
the HOLD pin is deasserted during the SCK high pulse, then the Hold mode won’t e nd until the beginning of the next SCK
low pulse.
If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may have been started will be
aborted, and the device will reset the WEL bit in the Status Register back to the logical “0” state.
Figure 12-8. Hold Mode
12.8 Reset
In some applications, it may be necessary to prematurely terminate a program or erase operation rather than wait the
hundreds of microseconds or milliseconds necessary for the program or erase operation to complete normally. The
Reset command allows a program or erase operation in progress to be ended abruptly and returns the device to an idle
state. Since the need to reset the device is immediate, the Write Enable command does not need to be issued prior to the
Reset command. Therefore, the Reset command operates independently of the state of the WEL bit in the Status
Register.
The Reset command can be executed only if the command has been enabled by setting the Reset Enabled (RSTE) bit in
the Status Register to a Logical 1 using write status register byte 2 command 31h. This command should be entered
before a program command is entered. If the Reset command has not been enabled (the RSTE bit is in the Logical 0
state), then any attempts at executing the Reset command will be ignored.
To perform a Reset, the CS pin must first be asserted, and then the opcode F0h must be clocked into the device. No
address bytes need to be clocked in, but a confirmation byte of D0h must be clocked into the device immediately after the
opcode. Any additional data clocked into the device after the confirmation byte will be ignored. When the CS pin is
deasserted, the program operation currently in progress will be terminated within a time of tSWRST. Since the program or
erase operation may not complete before the device is reset, the contents of the page being programmed or erased
cannot be guaranteed to be valid.
SCK
CS
HOLD
Hold HoldHold
28
AT25DF512C
DS-25DF512C–030C–2/2015
The Reset command has no effect on the states of the Configuration Register or RSTE bit in the Status Register. The
WEL however, will be reset back to its default state.
The complete opcode and confirmation byte must be clocked into the device before the CS pin is deasserted, and the CS
pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no Reset operation will be
performed.
Figure 12-9. Reset
13. Electrical Specifications
SCK
CS
SI
SO
MSB
2310
1111000
6754
Opcode Confirmation Byte In
10 119814151312
0
MSB
11010000
High-impedance
13.1 Absolute Maximum Ratings*
Temperature under Bias. . . . . . . . -55C to +125C*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other
conditions beyond those indicated in the operational
sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended
periods may affect device reliability.
Storage Temperature. . . . . . . . . . -65C to +150C
All Input Voltages
(including NC Pins)
with Respect to Ground. . . . . . . . . .-0.6V to +4.1V
All Output Voltages
with Respect to Ground. . . . . .-0.6V to VCC + 0.5V
13.2 DC and AC Operating Range
AT25DF512C
Operating Temperature (Case) (1) Ind. -40C to 85C
VCC Power Supply 1.65V to 3.6V
1. Temperature Range:-10°C to +85 °C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V)
29
AT25DF512C
DS-25DF512C–030C–2/2015
13.3 DC Characteristics
Typical values measured at 3.0V @ 25°C for the 2.3V to 3.6V range.
Symbol Parameter Condition
1.65V to 3.6V 2.3V to 3.6V
UnitsMin Typ Max Min Typ Max
IUDPD Ultra-Deep Power-
Down Current CS = VCC. All other
inputs at 0V or VCC 0.2 10.3 1µA
IDPD (1) Deep Power-Down
Current
CS, HOLD, WP = VIH
All inputs at CMOS
levels 515 8.5 15 µA
ISB Standby Current CS, HOLD, WP = VIH
All inputs at CMOS
levels 25 40 25 40 µA
ICC1 (2) (3) Active Current, Low
Power Read (03h,
0Bh) Operation
f = 1MHz; IOUT = 0mA 4.5 95.5 9mA
f = 20MHz; IOUT = 0mA 4.5 95.5 9mA
ICC2(2)(3)
Active Current,
Read Operation
f = 50MHz; IOUT = 0mA 510 610 mA
f = 85MHz; IOUT = 0mA 510 610 mA
ICC3(2)(3) Active Current,
Program Operation CS = VCC 12 16 12 16 mA
ICC4(2)(3) Active Current,
Erase Operation CS = VCC 12 18 12 18 mA
ILI Input Load Current All inputs at CMOS
levels 1 1 µA
ILO Output Leakage
Current All inputs at CMOS
levels 1 1 µA
VIL Input Low Voltage VCC x
0.2 VCC x
0.3 V
VIH Input High Voltage VCC x 0.8 VCC x 0.7 V
VOL Output Low Voltage IOL = 100µA 0.2 0.4 V
VOH Output High
Voltage IOH = -100µA VCC -
0.2V VCC -
0.2V V
1. Max. specification is 20µA @ 85°C.
2. Typical values measured at 1.8V @ 25°C for the 1.65V to 3.6V range.
3. Typical values measured at 3.0V @ 25°C for the 2.3V to 3.6V range.
30
AT25DF512C
DS-25DF512C–030C–2/2015
13.4 AC Characteristics - Maximum Clock Frequencies
Symbol Parameter
1.65V to 3.6V 2.3V to 3.6V
UnitsMin Typ Max Min Typ Max
fCLK Maximum Clock Frequency for All Operations
(including 0Bh opcode) 104 104 MHz
fRDLF Maximum Clock Frequency for 03h Opcode
(Read Array – Low Frequency) 33 33 MHz
fRDDO Maximum Clock Frequency for 3B Opcode50 50 MHz
13.5 AC Characteristics – All Other Parameters
Symbol Parameter
1.65V to 3.6V 2.3V to 3.6V
UnitsMin Typ Max Min Typ Max
tCLKH Clock High Time 4 4 ns
tCLKL Clock Low Time 4 4 ns
tCLKR(1) Clock Rise Time, Peak-to-Peak (Slew Rate) 0.1 0.1 V/ns
tCLKF(1) Clock Fall Time, Peak-to-Peak (Slew Rate) 0.1 0.1 V/ns
tCSH Chip Select High Time 35 25 ns
tCSLS Chip Select Low Setup Time (relative to Clock) 6 6 ns
tCSLH Chip Select Low Hold Time (relative to Clock) 6 6 ns
tCSHS Chip Select High Setup Time (relative to Clock) 6 6 ns
tCSHH Chip Select High Hold Time (relative to Clock) 6 6 ns
tDS Data In Setup Time 2 2 ns
tDH Data In Hold Time 1 1 ns
tDIS(1) Output Disable Time 8 6 ns
tVOutput Valid Time 8 6 ns
tOH Output Hold Time 0 0 ns
tHLS HOLD Low Setup Time (relative to Clock) 6 5 ns
tHLH HOLD Low Hold Time (relative to Clock) 6 5 ns
tHHS HOLD High Setup Time (relative to Clock) 6 5 ns
tHHH HOLD High Hold Time (relative to Clock) 6 5 ns
tHLQZ(1) HOLD Low to Output High-Z 7 6 ns
tHHQX(1) HOLD High to Output Low-Z 7 6 ns
tWPS(1)(2) Write Protect Setup T ime 20 20 ns
tWPH(1)(2) Write Protect Hold Time 100 100 ns
31
AT25DF512C
DS-25DF512C–030C–2/2015
Notes: 1. Not 100% tested (value guaranteed by design and characterization).
2. Only applicable as a constraint for the Write Status Register command when BPL = 1.
Note: 1. Maximum values indicate worst-case perfo rmanc e after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
3. Program and Erase operations characterized at -10°C to +85°C. Program and Erase opera tions at -40°C to -10°C require
a minimum of 1.7V.
tEDPD(1) Chip Select High to Deep Power-Down 2 2 µs
tEUDPD.Chip Select High to Ultra Deep Power-Down 3 3 µs
tSWRST Software Reset Time 60 60 µs
tCSLU Minimum Chip Select Low to Exit Ultra Deep
Power-Down 20 20 ns
tXUDPD Exit Ultra Deep Power-Down Time 70 70 µs
tRDPD(1) Chip Select High to S tandby Mode 8 8 µs
13.6 Program and Erase Characteristics
Symbol Parameter
1.65V-3.6V(3) 2.3V-3.6V
Min Typ Max Min Typ Max Units
tPP(1) Page Program Time (256 Bytes) 1.5 3.5 1.5 3.5 ms
tBP Byte Program Time 12 8µs
tPE Page Erase Time 625 625 ms
tBLKE(1) Block Erase Time 4 Kbytes 50 75 50 60 ms
32 Kbytes 350 600 300 400
tCHPE(1)(2) Chip Erase Time 700 1150 600 800 ms
tOTPP(1) OTP Security Register Program Time 400 950 400 950 µs
tWRSR(2) Write Status Register Time 20 40 20 40 ms
13.7 Power-up Conditions
Symbol Parameter Min Max Units
tVCSL Minimum VCC to Chip Select Low Time 70 µs
tPUW Power-up Device Delay Be fore Program or Erase Allowed 5ms
VPOR Power-on Reset Vol tage 1.45 1.6 V
13.5 AC Characteristics – All Other Parameters
Symbol Parameter
1.65V to 3.6V 2.3V to 3.6V
UnitsMin Typ Max Min Typ Max
32
AT25DF512C
DS-25DF512C–030C–2/2015
13.8 Input Test Waveforms and Measurement Levels
13.9 Output Test Load
14. AC Waveforms
Figure 14-1. Serial Input Timing
Figure 14-2. Serial Output Ti mi ng
AC
DRIVING
LEVELS
AC
MEASUREMENT
LEVEL
0.1V
CC
V
CC
/2
0.9V
CC
t
R
, t
F
< 2 ns (10% to 90%)
Device
Under
Test
30pF
CS
SI
SCK
SO
MSB
HIGH-IMPEDANCE
MSBLSB
tCSLS
tCLKH tCLKL tCSHS
tCSHH
tDS tDH
tCSLH
tCSH
CS
SI
SCK
SO
tV
tCLKH tCLKL tDIS
tV
tOH
33
AT25DF512C
DS-25DF512C–030C–2/2015
Figure 14-3. WP Timing for Write Status Register Command When BPL = 1
Figure 14-4. HOLD Timing – Serial Input
Figure 14-5. HOLD Timing – Serial Output
WP
SI
SCK
SO
000
HIGH-IMPEDANCE
MSBX
t
WPS
t
WPH
CS
LSB OF
WRITE STATUS REGISTER
DATA BYTE
MSB OF
WRITE STATUS REGISTER
OPCODE
MSB OF
NEXT OPCODE
CS
SI
SCK
SO
tHHH tHLS
tHLH tHHS
HOLD
HIGH-IMPEDANCE
CS
SI
SCK
SO
tHHH tHLS
tHLQZ
tHLH tHHS
HOLD
tHHQX
34
AT25DF512C
DS-25DF512C–030C–2/2015
15. Ordering Information
15.1 Ordering Code Detail
AT25 51 SSH B2C– –D F
Designator
Product Family
Device Density
512 = 512-kilobit Package Option
SS = 8-lead, 0.150" wide SOIC
MA = 8-pad, 2 x 3 x 0.6 mm UDFN
XM = 8-lead TSSOP
DWF = Die in Wafer Form
Device Grade
H = Green, NiPdAu lead finish, industrial
temperature range (-40°C to +85°C)
Shipping Carrier Option
B = Bulk (tubes)
T = Tape and reel
Device Revision
N
Voltage Code
N = 1.65V to 3.6V
15.2 Green Package Options (Pb/Halide-free/RoHS Compliant)
Ordering Code (1) Package Lead Finish Operating Voltage Max. Freq.
(MHz) Operation Range
AT25DF512C-SSHN-B
AT25DF512C-SSHN-T 8S1
NiPdAu 1.65V to 3.6V (2) 104 Industrial
(-40°C to +85°C)(2)
AT25DF512C-MAHN-T 8MA3
AT25DF512C-XMHN-T
AT25DF512C-XMHN-B 8X
AT25DF512C-DWF (3) DWF
1. The shipping carrier option code is not marked on the devices.
2. Temperature Range:-10°C to +85 °C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V).
3. Contact Adesto for mechanical drawing or Die Sales information.
Package Type
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8MA3 8-pad, 2 x 3 x 0.6 mm, Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package (UDFN)
8X 8-lead, Thin Small Outline Package
DWF Die in Wafer Form
35
AT25DF512C
DS-25DF512C–030C–2/2015
16. Packaging Information
16.1 8S1 – JEDEC SOIC
DRAWING NO. REV. TITLE GPC
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 – 0.25
A 1.35 – 1.75
b 0.31 – 0.51
C 0.17 – 0.25
D 4.80 – 5.05
E1 3.81 – 3.99
E 5.79 – 6.20
e 1.27 BSC
L 0.40 – 1.27
ØØ 0° – 8°
ØØ
EE
11
NN
TOP VIEWTOP VIEW
CC
E1E1
END VIEW
AA
bb
LL
A1A1
ee
DD
SIDE VIEWSIDE VIEW
Package Drawing Contact:
contact@adestotech.com
8S1 G
8/20/14
Notes: This drawing is for general information only.
Refer to JEDEC Drawing MS-012, Variation AA
for proper dimensions, tolerances, datums, etc.
8S1, 8-lead (0.150” Wide Body), Plastic Gull
Wing Small Outline (JEDEC SOIC) SWB
36
AT25DF512C
DS-25DF512C–030C–2/2015
16.2 8MA3 – UDFN
TITLE DRAWING NO.GPC REV.
Package Drawing Contact:
contact@adestotech.com
®
8MA3YCQ GT
8MA3, 8-pad, 2 x 3 x 0.6 mm Body, 0.5 mm Pitch,
1.6 x 0.2 mm Exposed Pad, Saw Singulated
Thermally Enhanced Plastic Ultra Thin Dual
Flat No Lead Package (UDFN/USON)
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX
A 0.45 0.60
A1 0.00 0.05
A3 0.150 REF
b 0.20 0.30
D 2.00 BSC
D2 1.50 1.60 1.70
E 3.00 BSC
E2 0.10 0.20 0.30
e 0.50 BSC
L 0.40 0.45 0.50
L1 0.00 0.10
L3 0.30 0.50
eee – – 0.08
8/26/14
Notes: 1. All dimensions are in mm. Angles in degrees.
2. Bilateral coplanarity zone applies to the exposed heat
sink slug as well as the terminals.
D
14
PIN 1 ID
E
5
23
678
eee
1
4
8
5
E2
D2
L3 L
Chamfer or half-circle
notch for Pin 1 indicator.
L1
37
AT25DF512C
DS-25DF512C–030C–2/2015
16.3 8X-TSSOP
DRAWING NO. REV. TITLE GPC
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A - - 1.20
A1 0.05 - 0.15
A2 0.80 1.00 1.05
D 2.90 3.00 3.10 2, 5
E 6.40 BSC
E1 4.30 4.40 4.50 3, 5
b 0.19 – 0.30 4
e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
C 0.09 - 0.20
Side View
End View
Top View
A2
A
L
L1
D
1
E1
N
b
Pin 1 indicator
this corner
E
e
Notes: 1. This drawing is for general information only. Refer to JEDEC
Drawing MO-153, Variation AA, for proper dimensions,
tolerances, datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate
burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15mm (0.006in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions.
Inter-lead Flash and protrusions shall not exceed 0.25mm
(0.010in) per side.
4. Dimension b does not include Dambar protrusion. Allowable
Dambar protrusion shall be 0.08mm total in excess of the b
dimension at maximum material condition. Dambar cannot be
located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07mm.
5. Dimension D and E1 to be determined at Datum Plane H.
H
8X E
12/8/11
8X, 8-lead 4.4mm Body, Plastic Thin
Shrink Small Outline Package (TSSOP) TNR
C
A1
Package Drawing Contact:
contact@adestotech.com
®
38
AT25DF512C
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17. Revision History
Revision Level – Release Date History
A – April 2014 Initial release. Document posted to public website.
B – October 2014
Corrected 8S1 and 8MA3 package outline drawings. Updated IUDPD
description in Table 13.3. Removed tray shipping option. Updated
last byte address in Section 7.2. Updated AC and DC specifications.
Updated document status to Preliminary.
C – February 2015 Added Die in Wafer Form (DWF) ordering option . Adde d IDPD
specification footnote.
Corporate Office
California | USA
Adesto Headquarters
1250 Borregas Ave nue
Sunnyvale, CA 94089
Phone: (+1) 408.400.0578
Email: contact@adestotech.com
© 2015 Adesto Technologies. All rights reserved. / Rev.: DS-25DF512C–030C–2/2015
Disclaimer: Adesto Technologies Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Adesto's Terms
and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specification s
detailed herei n at a ny ti me w it ho ut n otice , and does not make any commitm en t to u pd ate the information cont ained herein. No licenses to patents or other inte ll e c tua l pr ope r ty of A desto are granted by the
Company in conne ction with the sale of Adesto products, expressly or by implication. Adesto's products are no t authorized for use as critical components in life support devices or systems.
Adesto®, the Adesto logo, CBRAM®, and DataFlash® are registered trademarks or trademarks of Adesto Technologies. All other marks are the property of their respect i ve
owners.
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AT25DF512C-SSHN-B AT25DF512C-XMHN-B AT25DF512C-XMHN-T AT25DF512C-MAHN-Y AT25DF512C-
MAHN-T AT25DF512C-SSHN-T AT25DF512C-XMHNGU-T AT25DF512C-SSHNGU-B AT25DF512C-XMHNGU-B
AT25DF512C-SSHNGU-T AT25DF512C-MAHNGU-T
