SFH 310
SFH 310 FA
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
SFH 310 SFH 310 FA
2008-11-06 1
Wesentliche Merkmale
Spektraler Bereich der Fotoempfindlichkeit:
450 nm ...1100 nm (SFH 310)
740 nm ...1100 nm (SFH 310FA)
Gehäuse: 3mm Radial (T1), Harz
Besonderheit des Bauteils:
hohe Fotoempfindlichkeit
Anwendungen
Lichtschranken
Industrieelektronik
„Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Fotostrom, Ee= 0.5mW/cm2, λ = 950nm, VCE =5V
Photocurrent
Ipce (mA)
SFH 310 Q62702P0874 0.63
0.63...2.0
SFH 310-2/3 Q62702P3595
SFH 310 FA Q62702P1673 0.63
SFH 310 FA-2/3 Q62702P3596 0.63...2.0
Features
Spectral Range of Sensitivity:
450 nm ... 1100 nm (SFH 310)
740 nm ... 1100 nm (SFH 310FA
Package: 3 mm Radial (T1), Epoxy
Feature of the device:
high photosensitivity
Applications
Photointerrupters
Industrial electronics
For control and drive circuits
2008-11-06 2
SFH 310, SFH 310 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 + 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector current IC50 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 100 mA
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 165 mW
Wärmewiderstand
Thermal resistance RthJA 450 K/W
SFH 310, SFH 310 FA
2008-11-06 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 310 SFH 310 FA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 880 890 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ450 1100 740 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A0.11 0.11 mm2
Abmessung der Chipfläche
Dimensions of chip area L×B
L×W0.5 ×0.5 0.5 ×0.5 mm ×mm
Halbwinkel
Half angle ϕ± 25 ± 25 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E=0
Capacitance CCE 7.5 7.5 pF
Dunkelstrom
Dark current
VCE = 10 V, E=0
ICEO 1 (50) 1 (50) nA
2008-11-06 4
SFH 310, SFH 310 FA
Directional Characteristics
Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
-2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
SFH 310:
Ev = 1000 Ix, Normlicht/
standard light A, VCE = 5 V
IPCE
IPCE
0.63 1.25
3.0
1.0 2.0
4.8
1.6 3.2
7.7
mA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf5812μs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation
voltage
IC = IPCEmin1) × 0.3,
Ee = 0.5 mW/cm2
VCEsat 150 150 150 mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specified grou p.
SFH 310, SFH 310 FA
2008-11-06 5
Relative Spectral Sensitivity,
SFH 310 Srel = f (λ)
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 10 V, E = 0
400
0nm
%
OHF04042
20
40
60
80
100
λ
rel
S
10
30
50
70
500 600 700 800 900 1100
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
nA
OHF04050
CEO
I
A
T
-2
10
-1
10
100
1
10
102
3
10
104
-25 0 25 50 75 100˚C
Relative Spectral Sensitivity,
SFH 310 FA Srel = f (λ)
Photocurrent
IPCE = f (VCE), Ee = Parameter
Capacitance
CCE = f (VCE), f = 1 MHz
400
0nm
%
OHF04075
20
40
60
80
100
λ
rel
S
10
30
50
70
500 600 700 800 900 1100
0
pF
OHF04051
CE
C
CE
V
10-3 10-2 10-1 100101102
V
1
2
3
4
5
6
7
8
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
Photocurrent IPCE = f (TA),
VCE = 5 V, normalized to 25 °C
OHF04049
V
CE
0
10
10
1
10
-1
10
-2
CEO
I
nA
0V510 15 20 25 30 35
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
2008-11-06 6
SFH 310, SFH 310 FA
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
0.4 (0.016)
0.6 (0.024)
3.1 (0.122)
3.4 (0.134)
Area not flat
5.7 (0.224)
6.1 (0.240)
ø2.7 (0.106)
ø2.9 (0.114)
4.8 (0.189)
4.4 (0.173)
3.7 (0.146)
3.5 (0.138)
27.0 (1.063)
29.0 (1.142)
spacing
2.54 (0.100)
0.8 (0.031)
0.4 (0.016)
0.4 (0.016)
0.7 (0.028)
0.4 (0.016)
0.6 (0.024)
1.2 (0.047)
1.8 (0.071)
GEXY6710
0.9 (0.035)
1.1 (0.043)
Collector
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 310, SFH 310 FA
2008-11-06 7
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
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dangerous substances. For information on the types in question please contact our Sales Organization.
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components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
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to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be im planted in the human body, or (b) to sup port and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the us er may be endangered.