A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 20 mA 55 V
BVEBO IE = 5.0 mA 3.5 V
hFE VCE = 5.0 V IC = 20 mA 10 ---
PG
VSRW
η
ηη
ηC
VCE = 50 V POUT = 175 W f = 1090 MHz
8.0
9.0
40
00:1 dB
%
NPN SILICON RF-MICROWAVE POWER
TRANSISTOR
TPR175
DESCRIPTION:
The ASI TPR175 is a common base
transistor Designed for pulsed systems
in the f r equency band 1030-1090 MHz.
FEATURES:
• Common Base
• Internal Matching Network
• PG = 8.0 dB at 175 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 12.5 A
VCES 55 V
VEBO 3.5 V
PDISS 388 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.45 °C/W
PACKAGE STYLE
1 = Collector 2 = Base 3 = Emitter
