V
RRM
= 200 V - 400 V
I
F(AV)
= 400 A
Features
• High Surge Capability Heavy Three Tower Package
• Types from 200 V to 400 V V
RRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Parameter Symbol MURTA40020(R) Unit
Repetitive peak reverse voltage V
RRM
200 V
RMS reverse voltage V
RMS
141 V
DC blocking voltage
V
200
V
MURTA40040(R)
400
283
400
MURTA40020 thru MURTA40040R
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
Silicon Super Fast
Recover
y
Diode
DC
blocking
voltage
V
DC
200
V
Operating temperature T
j
-55 to 150 °C
Storage temperature T
stg
-55 to 150 °C
Parameter Symbol MURTA40020(R) Unit
A
verage forward current (per pkg) I
F(AV)
400 A
Peak forward surge current (per leg) I
FSM
3300 A
Maximum instantaneous forward
voltage (per leg) 1.0
25 μA
5mA
Maximum reverse recovery time (per
leg) T
rr
150 ns
Thermal characteristics
Maximum thermal resistance, junction
-
case (per leg) R
ΘJC
0.35 °C/W
400
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions MURTA40040(R)
T
C
= 100 °C 400
t
p
= 8.3 ms, half sine 3300
V
F
1.3
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
T
j
= 25 °C
V
0.35
I
R
25
5
150
T
j
= 125 °C
I
FM
= 200 A, T
j
= 25 °C
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
1
MURTA40020 thru MURTA40040R
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MURTA40020 thru MURTA40040R
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3
