TSUS540.
Document Number 81056
Rev. 1.5, 22-Feb-07
Vishay Semiconductors
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1
94 8389
Infrared Emitting Diode, 950 nm, GaAs
Description
TSUS540. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a clear,
blue-grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and pho-
totransistors.
Features
• Low cost emitter
• Low forward voltage
• High radiant power and radiant intensity
• Suitable for DC and high pulse current
operation
• Standard T-1¾ (∅ 5 mm) package
• Comfortable angle of half intensity ϕ = ± 22°
• Peak wavelength λp = 950 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared remote control and free air transmission
systems with low forward voltage and comfortable
radiation angle requirements in combination with
PIN photodiodes or phototransistors.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
e2
Parameter Test condition Symbol Value Unit
Reverse voltage VR5V
Forward current IF150 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 300 mA
Surge forward current tp = 100 µs IFSM 2.5 A
Power dissipation PV210 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 55 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C
Thermal Resistance junction/
ambient
RthJA 375 K/W
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Document Number 81056
Rev. 1.5, 22-Feb-07
TSUS540.
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Type Dedicated Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 100 mA, tp = 20 ms VF1.3 1.7 V
Temp. coefficient of VFIF = 100 mA TKVF - 1.3 mV/K
Reverse current VR = 5 V IR100 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj30 pF
Parameter Test condition Symbol Min Typ. Max Unit
Temp. coefficient of φeIF = 20 mA TKφe- 0.8 %/K
Angle of half intensity ϕ± 22 deg
Peak wavelength IF = 100 mA λp950 nm
Spectral bandwidth IF = 100 mA Δλ 50 nm
Temp. coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr800 ns
IF = 1.5 A tr400 ns
Fall time IF = 100 mA tf800 ns
IF = 1.5 A tf400 ns
Virtual source diameter ∅2.9 mm
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 1.5 A, tp = 100 µs TSUS5400 VF2.2 3.4 V
TSUS5401 VF2.2 3.4 V
TSUS5402 VF2.2 2.7 V
Radiant intensity IF = 100 mA, tp = 20 ms TSUS5400 Ie71435mW/sr
TSUS5401 Ie10 17 35 mW/sr
TSUS5402 Ie15 20 35 mW/sr
IF = 1.5 A, tp = 100 µs TSUS5400 Ie60 140 mW/sr
TSUS5401 Ie85 160 mW/sr
TSUS5402 Ie120 190 mW/sr
Radiant power IF = 100 mA, tp = 20 ms TSUS5400 φe13 mW
TSUS5401 φe14 mW
TSUS5402 φe15 mW
TSUS540.
Document Number 81056
Rev. 1.5, 22-Feb-07
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
Figure 3. Pulse Forward Current vs. Pulse Duration
0
50
100
150
200
250
P - Power Dissipation (mW)
V
T
amb
- Ambient Temperature (°C)
94 7957
R
thJA
20 40 60 80 100 0
020406080
0
50
100
150
200
250
I - Forward Current (mA)
F
Tamb- Ambient Temperature (°C)
100
94 7988
RthJA
tp- Pulse Duration (ms)
94 7989
100
101
101
10-1
10-1 100102
10-2
I- Forward Current (A)
F
tp/T = 0.01
IFSM = 2.5 A ( Single Pulse )
0.05
0.1
0.5
1.0
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 6. Radiant Intensity vs. Forward Current
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I- Forward Current (mA)
F
43210
V
F- Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
V- Relative Forward Voltage (V)
Frel
94 7990
T
amb
- Ambient Temperature (°C)
100806040200
I
F
= 10 mA
I
F- Forward Current (mA)
94 7997
10
3
10
1
10
2
10
4
10
0
1
10
100
1000
I - Radiant Intensity (mW/sr)
e
TSUS5400
TSUS 5401
TSUS 5402
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Document Number 81056
Rev. 1.5, 22-Feb-07
TSUS540.
Vishay Semiconductors
Figure 7. Radiant Power vs. Forward Current
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Figure 9. Relative Radiant Power vs. Wavelength
- Radiant Power (mW)
e
IF- Forward Current (mA)
94 7998
103
101102104
100
0.1
1
10
1000
100
TSUS5400
TSUS 5402
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
I;
e rel e rel
140
94 7993
IF = 20 mA
Φ
T
amb- Ambient Temperature (°C)
900 950
0
0.25
0.5
0.75
1.0
1.25
- Wavelength (nm)
1000
94 7994
Φ
e rel
- Relative Radiant Power
I
F
= 100 mA
λ
Figure 10. Relative Radiant Intensity vs. Angular Displacement
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
e rel
0.6
94 7999
0.6
0.9
0.8
0°
30°
10°20°
40°
50°
60°
70°
80°
0.7
1.0
TSUS540.
Document Number 81056
Rev. 1.5, 22-Feb-07
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in mm
96 12119
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6
Document Number 81056
Rev. 1.5, 22-Feb-07
TSUS540.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
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