T4-LDS-0175, Rev. 2 (8/30/13) ©2013 Microsemi Corporation Page 1 of 4
2N3866(A)
Compliant
NPN Silicon High-Frequency Transistor
Qualified per MIL-PRF-19500/398
Quali f i ed Lev els:
JAN, JAN TX, JANTXV
and JANS
DESCRIPTION
This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level
for high-reliability applications . It is also available in a low profile UB p ackage.
TO-205AD
(formerly TO-39)
Package
Also available in:
UB package
(s urf ace mount )
2N3866(A)UB
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3866 number
• JAN, JANTX, JANTXV and JANS qualifications also avai lable per MIL-PRF-19500/398
• RoHS com pliant
APPLICATIONS / BENE FITS
• Short leaded TO-205AD pack age
• Lightweight
• Military and other high-reliability applications
MAXIMUM RATINGS @ TA = +25 °C unless otherwi se n oted
Parameters / Test Conditions Symbol Value Unit
Junction & Stor age Temper ature
TJ, Tstg
-65 to +200
°C
Thermal Resistance Junction-to-Case
RӨJC
60
ºC/W
Thermal Resistance Junction-to-Ambient
RӨJA
175
ºC/W
Collector – Emitter Voltage
VCEO
30
V
Collector – Base Voltage
VCBO
60
V
Emitter - Base Voltage
VEBO
3.5
V
Total Power Dissipation (1)
A
(2) PT
1.0
2.9
W
Collector Current
IC
0.4
A
Notes: 1. Derated linearly 5.71 mW/°C for TA > +25 °C
2. Derated at 16.6 mW/°C for TC > +25 °C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0175, Rev. 2 (8/30/13) ©2013 Microsemi Corporation Page 2 of 4
2N3866(A)
M ECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap
• TERMINALS: Gold plate, solder dip (Sn63/Pb37) avai lable upon request. NOTE: Solder dip will eliminate RoHS compliance.
• MARKING: Part number, date code, manufacturer’s ID and serial number
• POLARITY: NPN
• WEIGHT: A pproximately 1.064 grams
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3866 (A)
Reliability Level
JAN = JAN lev el
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
Forward Cur rent Tr ansfer
Ratio selection option
JEDEC type number
SYMBOL S & DEFI NITIONS
Symbol
Definition
I
B
Base cur rent: The value of the dc current into the base terminal.
IC
Collector current: The value of the dc current into the collector terminal.
VBE
Base-emitter voltage: The dc voltage between the base and the emitter.
V
CB
Collector-base voltage: The dc vol tage between the collector and the base.
VCBO Collector-base vol tage, base open: The vol tage between the collector and base terminals when the emitter terminal is
open-circuited.
VCE
Collector-emitter voltage: The dc voltage between the collector and the emitter.
VCEO Collector-emitter voltage, base open: The voltage between the collector and the emitter ter minals when the base
terminal is open-circuited.
VCC
Collector-suppl y voltage: The supply voltage applied to a circuit connected to the collector.
VEBO
Emitter-base voltage, collector open: The voltage between the emi tter and base terminals with the collector terminal
open-circuited.
T4-LDS-0175, Rev. 2 (8/30/13) ©2013 Microsemi Corporation Page 3 of 4
2N3866(A)
ELECTRI CAL CHARACTERISTICS @ TA = +2 5 ° C , u nless other wis e noted
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emit ter Breakdown Voltage
IC = 5 mA
V(BR)CEO
30
V
Collector-Base Breakdown Vol tage
IC = 10 0 µA
V(BR)CBO
60
V
Emitter-Base Break down Voltag e
IE = 10 0 µA
V(BR)EBO
3.5
V
Collector-Emit ter Cut off Current
VCE = 28 V
ICEO
20 µA
Collector-Emit ter Cut off Current
VCE = 55 V
ICES1 100 µA
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 50 mA, VCE = 5.0 V
IC = 360 mA, VCE = 5.0 V
2N3866
2N3866A
2N3866
2N3866A
hFE
15
25
5
8
200
200
Collector-Emitter Saturation Voltage
IC = 100 mA, I B = 10 mA
VCE(sat) 1.0 V
Collector-Emit ter Cut off Current – High Tem p Operation
VCE = 55 V, TA = +150 ºC ICES2 2.0 mA
Forward-Current Transfer Ratio –
Low Temper ature Operation
VCE = 5. 0 V, IC = 50 mA,
TA
= -55 ºC
2N3866
2N3866A
hFE3
7
12
DYNAMIC CHARACTERISTICS
Magn itude of Common Emitter Small-Signal
Short-Circuit Forward Cur r ent Tran sfer Rati o
I
C
= 50 mA, V
CE
= 15 V, f = 200 MHz
2N3866
2N3866A
|hFE|
2.5
4.0
8.0
7.5
O utput Capac itance
VCB = 28 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 3.5 pF
POWER OUTPUT CHARACTERISTICS
Power Output
VCC = 28 V; Pin = 0.15 W; f = 4 00 MHz *
VCC = 28 V; Pin = 0.075 W; f = 4 0 0 MHz *
* See Figur e 4 on MIL-PRF-19500/398
P1out
P2out 1.0
0.5 2.0
W
Collector Efficiency
VCC = 28 V; Pin = 0.15 W; f = 400 MHz
VCC = 28 V; Pin = 0.075 W; f = 4 0 0 MHz
n1
n2 45
40 %
Clamp In du c tive
Collector-Emit ter Breakdown Voltage
VBE = -1.5 V, IC = 40 mA V(BR)CEX 55 V
(1) Pulse Test: pulse width = 300 µs, duty cycle ≤ 2.0%
T4-LDS-0175, Rev. 2 (8/30/13) ©2013 Microsemi Corporation Page 4 of 4
2N3866(A)
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. Beyond r (radius ) maximum, TL shall be held for a minimum length of 0.011 inch (0.28 mm) .
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. Thi s zone is controlled for automatic handling.
7. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) belo w seatin g plane shall be with in 0.007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
8. Dimension LU appli es betw een L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
9. All three leads.
10. The collector shall be internall y connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
Ltr
Dimensions
Inch
Millimeters
Notes
Min Max Min Max
CD
0.305 0.335 7.75 8.51
CH 0.240 0.260 6.10 6.60
HD
0.335
0.370
8.51
9.40
h
0.009 0.041 0.23 1.04
j 0.028 0.034 0.71 0.86 3
k 0.029 0.045 0.74 1.14 3, 4
LD 0.016 0.021 0.41 0.53 8, 9
LL
0.500 0.750 12.7 19.05
LC
0.200 TP 5.08 TP 7
LU 0.016 0.019 0.41 0.48 8, 9
L1
-
0.050
-
1.27 8, 9
L2
0.250
-
6.35
-
8, 9
P
0.100
-
2.54
-
7
Q
-
0.030
-
0.76 5
r
-
0.010
-
0.25
10
α
45° TP
45° TP
7
α