O
Maximum Ratings (at TA=25 C unless otherwise noted)
Parameter Symbol Unit
Repetitive peak reverse voltage
RMS voltage
Continuous reverse voltage
O
Forward rectified current @TA=55 C
Maximum forward voltage
Forward surge current, 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
O
Reverse current, VR=VRRM @TA=25 C
@
Reverse recovery time
Thermal resistance, junction to ambient air
Diode junction capacitance
Operating junction temperature
Storage temperature range
O
TA=100 C
Voltage: 50 to 1000 Volts
Current: 1.0 A
RoHS Device
Dimensions in inches and (millimeter)
Features
-Plastic package has Underwirters Laboratory
flammability classification 94V-0 utilizing flame
retardant epoxy molding compound.
-For surface mounted applications.
-Exceeds environmental standard of MIL-STD-
19500/228.
-Low leakage current.
Mechanical data
-Case: Molded plastic, JEDEC SOD-123/Mini SMA.
-Terminals: Solder plated, solderable per MIL-STD-
750, method 2026.
-Polarity: Indicated by cathode band.
-Weight: 0.04 grams approx.
CFRM101-G Thru. CFRM107-G
Page 1
QW-BF006
SMD Fast Recovery Rectifiers
REV:B
Comchip Technology CO., LTD.
SMD Diodes Specialist
COMCHIP
Mini SMA
0.154(3.9)
0.138(3.5) 0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.126(3.2)
0.110(2.8)
0.067(1.7)
0.051(1.3)
0.035(0.9) Typ.0.035(0.9) Typ.
VRRM
VRMS
VR
IO
VF
IFSM
IR
trr
RθJA
CJ
TJ
TSTG
CFRM
101-G
CFRM
102-G
CFRM
103-G
CFRM
104-G
CFRM
105-G
CFRM
106-G
CFRM
107-G
50
35
50
100
70
100
200
140
200
400
280
400
1.0
1.3
30
1.0
100
42
15
-55 to +150
-55 to +150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
A
μA
nS
OC/W
pF
OC
OC
150 250 500
Page 2
QW-BF006
REV:B
Comchip Technology CO., LTD.
Rating and Characteristic Curves (CFRM101 )-G Thru. CFRM107-G
Fig.2 Forward Current Derating Curve
ΙΟ, Averaged Forward Current (A)
O
TA, Ambient Temperature ( C)
0
Fig.1 Forward Characteristics
IF, Forward Current (A)
VF, Forward Voltage (V)
0.6 1.0 1.4 2.0
Fig.3 Max. Non-repetitive Forward
Surge Current
0
IFSM, Peak Forward Surge Current (A)
Number of Cycles at 60Hz
20
50
1 10
0.01
10
100
200
100
Fig.4 Typical Junction Capacitance
0
CJ, Junction Capacitance (pF)
VR, Reverse Voltage (V)
20
35
15
1.8
0.1
0.01 100
1
SMD Diodes Specialist
COMCHIP
0
0.6
1.0
1.2
0.4
0.2
50
5
100 150
10
30
40
10
0.8 1.2 1.6
0.8
SMD Fast Recovery Rectifiers
1
O
TJ=25 C
Pulse width=300μs
1% duty cycle
Single phase, half
wave, 60Hz, resistive
or inductive load
O
TJ=25 C
8.3ms single half sine
wave, JEDEC method
0.1 10
25
30
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
(+)
(+)
25Vdc
(approx.)
( )
( )
PULSE
GENERATOR
(NOTE 2)
OSCILLISCOPE
(NOTE 1)
1
NON-
INDUCTIVE
W
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
D.U.T.
10
NONINDUCTIVE
50
NONINDUCTIVE
WW+0.5A
0
-0.25A
-1.0A
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1cm
SET TIME BASE FOR
50 / 10ns / cm
trr
