TSUS4400
Document Number 81054
Rev. 1.5, 23-Feb-07
Vishay Semiconductors
www.vishay.com
1
94 8636
Infrared Emitting Diode, 950 nm, GaAs
Description
TSUS4400 is an infrared emitting diode in standard
GaAs on GaAs technology, molded in a clear, blue
tinted plastic package. The device is spectrally
matched to silicon photodetectors.
Features
• Low forward voltage
• High radiant power and radiant intensity
• Suitable for DC and high pulse current
operation e2
• Standard T-1(∅ 3 mm) package
• Angle of half intensity ϕ = ± 18°
• Peak wavelength λp = 950 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared remote control systems with small pack-
age and low cost requirements in combination with
silicon photo detectors. Infrared source in reflec-
tive sensors, tape end detection.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 2A
Power dissipation PV170 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 55 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 450 K/W
www.vishay.com
2
Document Number 81054
Rev. 1.5, 23-Feb-07
TSUS4400
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 100 mA, tp = 20 ms VF1.3 1.7 V
IF = 1.5 A, tp = 100 µs VF2.2 V
Temp. coefficient of VFIF = 100 mA TKVF - 1.3 mV/K
Reverse current VR = 5 V IR100 µA
Breakdown voltage IR = 100 µA V(BR) 540 V
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj30 pF
Parameter Test condition Symbol Min Ty p. Max Unit
Radiant intensity IF = 100 mA, tp = 20 ms Ie71535mW/sr
IF = 1.5 A, tp = 100 µs Ie140 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe20 mW
Temp. coefficient of φeIF = 20 mA TKφe- 0.8 %/K
Angle of half intensity ϕ± 18 deg
Peak wavelength IF = 100 mA λp950 nm
Spectral bandwidth IF = 100 mA Δλ 50 nm
Temp. coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr800 ns
IF = 1.5 A tr400 ns
Fall time IF = 100 mA tf800 ns
IF = 1.5 A tf400 ns
Virtual source diameter ∅2.1 mm
Figure 1. Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
P - Power Dissipation (mW)
V
94 8029
R
thJA
T
amb
- Ambient Temperature (°C)
100 80 60 40 20 0
Figure 2. Forward Current vs. Ambient Temperature
0
25
50
75
100
12
5
94 7916
R
thJA
T
amb- Ambient Temperature (°C)
100 80 60 40 20 0
F
I- Forward Current (mA)
TSUS4400
Document Number 81054
Rev. 1.5, 23-Feb-07
Vishay Semiconductors
www.vishay.com
3
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Relative Forward Voltage vs. Ambient Temperature
tp- Pulse Duration (ms)
94 7947
10 0
10 1
101
10-1
10 -1 10 010 2
10 -2
tp/T = 0.01, I FM =2A
0.05
0.1
0.5
0.02
0.2
I - Forward Current (A)
F
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I- Forward Current (mA)
F
43210
V
F- Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
V- Relative Forward Voltage (V)
Frel
94 7990
T
amb
- Ambient Temperature (°C)
100806040200
I
F
= 10 mA
Figure 6. Radiant Intensity vs. Forward Current
Figure 7. Radiant Power vs. Forward Current
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
I
F
- Forward Current (mA)
94 7982
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
I - Radiant Intensity (mW/sr)
e
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
94 7980
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
I;
e rel e rel
140
94 7993
IF = 20 mA
Φ
T
amb- Ambient Temperature (°C)
www.vishay.com
4
Document Number 81054
Rev. 1.5, 23-Feb-07
TSUS4400
Vishay Semiconductors
Package Dimensions in mm
Figure 9. Relative Radiant Power vs. Wavelength
900 950
0
0.25
0.5
0.75
1.0
1.25
- Wavelength (nm)
1000
94 7994
Φ
e rel
- Relative Radiant Power
I
F
= 100 mA
λ
Figure 10. Relative Radiant Intensity vs. Angular Displacement
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
e rel
0.6
94 7983
0.6
0.9
0.8
0°
30°
10°20°
40°
50°
60°
70°
80°
0.7
1.0
95 10914
TSUS4400
Document Number 81054
Rev. 1.5, 23-Feb-07
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
