2SK3147(L),2SK3147(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-731 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
RDS = 0.1 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
123
44
123
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
1
2
3
D
G
S
2SK3147(L),2SK3147(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 100 V
Gate to source voltage VGSS ±20 V
Drain current ID5A
Drain peak current ID(pulse)Note1 20 A
Body-drain diode reverse drain current IDR 5A
Avalanche current IAP Note3 5A
Avalanche energy EAR Note3 2.5 mJ
Channel dissipation Pch Note2 20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20——V I
G = ±100 µA, VDS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16 V, VDS = 0
Zero gate voltege drain current IDSS ——10µAV
DS = 100 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V
Static drain to source on state RDS(on) — 0.1 0.13 ΩID = 3 A, VGS = 10 VNote4
resistance RDS(on) — 0.13 0.18 ΩID = 3 A, VGS = 4 V Note4
Forward transfer admittance |yfs| 3.5 6 — S ID = 3 A, VDS = 10 V Note4
Input capacitance Ciss — 420 — pF VDS = 10 V
Output capacitance Coss — 185 — pF VGS = 0
Reverse transfer capacitance Crss — 100 — pF f = 1 MHz
Turn-on delay time td(on) — 10 — ns ID = 3 A, VGS = 10 V
Rise time tr— 35 — ns RL = 10 Ω
Turn-off delay time td(off) — 110 — ns
Fall time tf—60—ns
Body–drain diode forward voltage VDF — 0.85 — V IF = 5 A, VGS = 0
Body–drain diode reverse
recovery time trr — 85 — ns IF = 5 A, V
GS
= 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
2SK3147(L),2SK3147(S)
3
Main Characteristics
40
30
20
10
050 100 150 200
50
20
10
5
1
0.112 5
10 20 50 100
10
8
6
4
2
012345
0246810
Ta = 25 °C
Tc = 75°C
25°C
–25°C
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by R
DS(on)
V = 10 V
Pulse Test
DS
100 µs
1 ms
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
10
8
6
4
2
3.5 V
3 V
V =2.5 V
GS
10 V Pulse Test
6 V
4 V
500
2
0.2
0.5
200
2SK3147(L),2SK3147(S)
4
0.1 1 100.2 5
0.5
0.02
0.05
0.01
0.50
0.40
0.30
0.20
0.10
–40 0 40 80 120 160
00.1 0.3 1 3 10 30 100
50
20
5
10
1
2
0.5
20.5
2.5
2.0
1.5
1.0
0.5
048
12 16 20
I = 5 A
D
1 A
2 A
5020
0.2
0.1
V = 4 V
GS
10 V
V = 4 V
GS
10 V
1, 2 A
5 A
25 °C
Tc = –25 °C
75 °C
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on
)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature T
c
(°C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
V = 10 V
Pulse Test
DS
Pulse Test
1, 2 A 5 A
2SK3147(L),2SK3147(S)
5
0.1 0.3 1 3 10 30 100 01020304050
2000
5000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
8 16243240
0
1000
500
50
100
20
10
200
500
300
30
100
3
10
1
0.1 0.3 1310 30100
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
10
20
50
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 5 A
D
V
GS
V
DS
V = 100 V
50 V
25 V
DD
V = 100 V
50 V
25 V
DD
tf
r
t
d(on)
t
d(off)
t
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body–Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
2SK3147(L),2SK3147(S)
6
10
8
6
4
2
00.4 0.8 1.2 1.6 2.0
V = 0, –5 V
GS
10 V
5 V
2.5
2.0
1.5
1.0
0.5
25 50 75 100 125 150
0
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
V
DD
50Ω
Vin
15 V
0
I
D
V
DS
I
AP
V
(BR)DSS
L
V
DD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
Channel Temperature Tch (°C)
Repetive Avalanche Energy E (mJ)
AR
Maximun Avalanche Energy vs.
Channel Temperature Derating
Avalanche WaveformAvalanche Test Circuit
I = 5 A
V = 50 V
duty < 0.1 %
Rg > 50
AP
DD
Ω
2SK3147(L),2SK3147(S)
7
3
1
0.3
0.1
0.03
0.01
10 µ 100 µ 1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 6.25 °C/W, Tc = 25 °C
θ γ θ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
t
f
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
Switching Time Test Circuit Waveform
2SK3147(L),2SK3147(S)
8
Package Dimensions
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.3 ± 0.2
0.55 ± 0.1
2.29 ± 0.5 0.55 ± 0.1 1.2 ± 0.3
1.7 ± 0.5
5.5 ± 0.53.1 ± 0.5
16.2 ± 0.5
2.29 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.3 ± 0.2
0.55 ± 0.1
1.7 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
2.29 ± 0.5 2.29 ± 0.5
1.2 Max
0.55 ± 0.1
0 ~ 0.25
0.8 ± 0.1
type
LStype
4.7 ± 0.5
Hitachi
EIAJ ( L type)
EIAJ ( S type)
JEDEC
DPAK–2
SC–63
SC–64
—
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contact Hitachi’s sales office before using the product in an application that demands especially high
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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5. This product is not designed to be radiation resistant.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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