Notes through are on page 8
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1/20/04
IRFBA90N20D
SMPS MOSFET
HEXFET® Power MOSFET
VDSS RDS(on) max ID
200V 0.023W98A
PD - 94300C
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 98
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 71A
IDM Pulsed Drain Current 390
PD @TC = 25°C Power Dissipation 650 W
Linear Derating Factor 4.3 W/°C
VGS Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 6.3 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Recommended Clip Force 20 N
Absolute Maximum Ratings
lHigh frequency DC-DC converters
Benefits
Applications
lLow Gate-to-Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current Super-220
Thermal Resistance
Parameter Typ. Max. Units
RqJC Junction-to-Case 0.23
RqCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W
RqJA Junction-to-Ambient 58
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 41 S VDS = 50V, ID = 59A
QgTotal Gate Charge 160 240 ID = 59A
Qgs Gate-to-Source Charge 45 67 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge 75 110 VGS = 10V
td(on) Turn-On Delay Time 23 VDD = 100V
trRise Time 160 ID = 59A
td(off) Turn-Off Delay Time 39 RG = 1.2W
tfFall Time 77 VGS = 10V
Ciss Input Capacitance 6080 VGS = 0V
Coss Output Capacitance 1040 VDS = 25V
Crss Reverse Transfer Capacitance 150 pF = 1.0MHz
Coss Output Capacitance 7500 VGS = 0V, VDS = 1.0V, = 1.0MHz
Coss Output Capacitance 410 VGS = 0V, VDS = 160V, = 1.0MHz
Coss eff. Effective Output Capacitance 790 VGS = 0V, VDS = 0V to 160V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy 960 mJ
IAR Avalanche Current 59 A
EAR Repetitive Avalanche Energy 65 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.5 V TJ = 25°C, IS = 59A, VGS = 0V
trr Reverse Recovery Time 220 340 nS TJ = 25°C, IF = 59A
Qrr Reverse RecoveryCharge 1.9 2.8 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
98
390
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 250µA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient 0.22 V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.023 WVGS = 10V, ID = 59A
VGS(th) Gate Threshold Voltage 3.0 5.0 V VDS = VGS, ID = 250µA
25 µA VDS = 200V, VGS = 0V
250 VDS = 160V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 VGS = 30V
Gate-to-Source Reverse Leakage -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
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2.0
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3.0
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T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
98A
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
20
40
60
80
100
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
:
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
400
800
1200
1600
2000
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
24A
42A
59A
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P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
· dv/dt controlled by RG
· Driver same type as D.U.T.
· ISD controlled by Duty Factor "D"
· D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
*
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Repetitive rating; pulse width limited by
max. junction temperature.
ISD £ 59A, di/dt £ 170A/µs, VDD £ V(BR)DSS,
TJ £ 175°C
Notes:
Starting TJ = 25°C, L = 0.55mH
RG = 25W, IAS = 59A.
Pulse width £ 300µs; duty cycle £ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A.
Super-220 Package Outline
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/04
Super-220 not recommended for surface mount application.
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