AO3406 30V N-Channel MOSFET General Description Product Summary The AO3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 3.6A RDS(ON) (at VGS=10V) < 50m RDS(ON) (at VGS =4.5V) < 70m SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 7: Jan. 2011 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t 10s V 15 PD TA=70C 20 2.9 IDM TA=25C Power Dissipation B Units V 3.6 ID TA=70C Maximum 30 RJA RJL www.aosmd.com C -55 to 150 Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Page 1 of 5 AO3406 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V TJ=55C Gate-Body leakage current VDS=0V, VGS= 20V VDS=VGS ID=250A 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 15 100 nA 2 2.5 V 36 50 57 80 VGS=4.5V, ID=2.8A 48 70 m 11 1 V 1.5 A VGS=10V, ID=3.6A Static Drain-Source On-Resistance TJ=125C gFS Forward Transconductance VDS=5V, ID=3.6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance A 0.79 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance A 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 170 VGS=0V, VDS=15V, f=1MHz m S 210 35 pF pF 23 pF 3.5 5.3 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 4.05 5 nC Qg(4.5V) Total Gate Charge 2 3 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=3.6A 1.7 0.55 nC 1 nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=3.6A, dI/dt=100A/s 7.5 Qrr Body Diode Reverse Recovery Charge IF=3.6A, dI/dt=100A/s 2.5 VGS=10V, VDS=15V, RL=2.2, RGEN=3 4.5 ns 1.5 ns 18.5 ns 15.5 ns 10 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: Jan. 2011 www.aosmd.com Page 2 of 5 AO3406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 10V VDS=5V 4.5V 4V 12 8 7V 9 6 ID(A) ID (A) 3.5V 6 4 3 2 125C 25C VGS=3.0V 0 0 0 1 2 3 4 1.5 5 70 2.5 3 3.5 4 4.5 5 Normalized On-Resistance 2 60 RDS(ON) (m ) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 50 VGS=10V 40 1.8 VGS=10V ID=3.6A 1.6 17 5 2 10 =4.5V 1.4 1.2 VGS ID=2.8A 1 0.8 30 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 120 1.0E+02 ID=3.6A 1.0E+01 100 40 80 IS (A) RDS(ON) (m ) 1.0E+00 125C 60 1.0E-01 125C 1.0E-02 25C 1.0E-03 40 25C 1.0E-04 1.0E-05 20 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 7: Jan. 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3406 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=15V ID=3.6A 250 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 200 150 100 Coss 2 50 0 Crss 0 0 1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics 5 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25C 1000 RDS(ON) limited 10s 100s 1.0 1ms 10ms 0.1 TJ(Max)=150C TA=25C Power (W) ID (Amps) 10.0 100 10 10s DC 1 0.0 0.00001 0.01 0.1 1 VDS (Volts) 10 0.001 0.1 10 1000 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=125C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 7: Jan. 2011 www.aosmd.com Page 4 of 5 AO3406 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 7: Jan. 2011 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5