TBD62064APG/FG
2015-12-17
1
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62064APG, TBD62064AFG
4channel high c ur rent sink type DMOS transistor array
TBD62064A series are DMOS transistor array with 4
circuits. It has a clamp diode for switching inductive loads
built-in in each output. Please be careful about thermal
conditions during use.
Features
• 4 circuits built-in
• High voltage : VOUT = 50 V (MAX)
• High current : IOUT = 1.5 A/ch (MAX)
• Input voltage(output on) : 2.5 V (MIN)
• Input voltage(output off) : 0.6 V (MAX)
• Package : PG type DIP16-P-300-2.54A
FG type HSOP16-P-300-1.00
Pin connec ti on ( top view)
TBD62064APG
TBD62064AFG
Pin connection may be simp l ified for explanatory purpose.
TBD62064APG
TBD62064AFG
Weight
DIP16
-P-300-2.54A : 1.11 g (Typ.)
HSOP16-P-300-1.00 : 0.50 g (Typ.)
O4
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
NC
I4
I3
NC
O3
COMMON
O1
I1
I2
O2
COMMON
GND
GND
GND
GND
O4
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
NC
I4
I3
NC
O3
O1
I1
I2
O2
GND
GND
NC
NC
NC
NC
COMMON
COMMON
FIN
FIN
©2015 T OSHIBA Corp oration
TBD62064APG/FG
2015-12-17
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Pin explanati ons
TBD62064APG
Pin No. Pin name Function
1
COMMON
Common pin
2
O1
Output pin 1
3
I1
Input pin 1
4
GND
GND pin
5
GND
GND pin
6
I2
Input pin 2
7
O2
Output pin 2
8
COMMON
Common pin
9
O3
Output pin 3
10
NC
Non-connection pin
11
I3
Input pin 3
12
GND
GND pin
13
GND
GND pin
14
I4
Input pin 4
15
NC
Non-connection pin
16
O4
Output pin 4
TBD62064AFG
Pin No. Pin name Function
1
COMMON
Common pin
2
O1
Output pin 1
3
I1
Input pin 1
4
NC
Non-connection pin
FIN
GND
GND pin
5
NC
Non-connection pin
6
I2
Input pin 2
7
O2
Output pin 2
8
COMMON
Common pin
9
O3
Output pin 3
10
NC
Non-connection pin
11
I3
Input pin 3
12
NC
Non-connection pin
FIN
GND
GND pin
13
NC
Non-connection pin
14
I4
Input pin 4
15
NC
Non-connection pin
16
O4
Output pin 4
Equivalent circuit
Equivalent circuit may be simplified for explanatory purpose.
Clamp
Circuit
INPUT
COMMON
OUTPUT
Clamp diode
TBD62064APG/FG
2015-12-17
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Output voltage
V
OUT
50
V
COMMO N pi n voltage
V
COM
−0.5 to 50
V
Output cur r ent
I
OUT
1.5
A/ch
Input v oltage
V
IN
−0.5 to 30
V
Clamp diod e r everse
voltage VR 50 V
Clamp diod e f or ward
current IF 1.5 A
Power
dissipation
PG
PD
1.47 (Note 1) / 2.7 (Note 2)
W
FG
0.9 (Note 3) / 1.4 (Note 4)
Operatin g t emperature
T
opr
−40 to 85
°C
Storage t em per at ur e
T
stg
−55 to 150
°C
Note1: Devic e al one. Whe n Ta exceeds 25°C, it is neces sary to do the deratin g with 11.8 mW/°C.
Note2: On PCB (Siz e: 50 mm × 50 mm × 1.6 m m, C u ar ea: 50%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 21.6 mW/°C.
Note3: Device alone. When Ta exceeds 25°C, it is necessary to do the der at ing with 7.2 mW/°C.
Note4: On PCB (S iz e: 60 mm × 30 mm × 1.6 mm, C u ar ea: 30%, single-side glass epoxy).
When Ta exceeds 25° C, it is necessary to do t he derating with 11.2 mW/°C.
Operating Ranges (Ta = −40 to 85°C)
Characteristics Symbol Condition Min Typ. Max Unit
Output voltage VOUT ― ― ― 50 V
COMMO N pi n voltage VCOM ― 0 ― 50 V
PG (Note 1)
IOUT
1 circuit ON, Ta = 25°C 0 ― 1250
mA/ch
Output
current
tpw = 25 ms
4 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10% 0 ― 1250
Duty = 50% 0 ― 610
FG (Note 2)
1 circuit ON, Ta = 25°C
0
―
1250
tpw = 25 ms
4 circuits ON
Ta = 85°C
Tj = 120°C
Duty = 10%
0
―
990
Duty = 50% 0 ― 440
Input v oltage
(Output on) VIN (ON) IOUT = 100 mA or upper, VOUT = 2 V
2.5 ― 25 V
Input v oltage
(Output off) VIN (OFF) IOUT = 100 μA or less, VOUT = 2 V 0 ― 0.6 V
Clamp diode
forward cur r ent IF ― ― ― 1.25 A
Note1: On PCB (S iz e: 50 mm × 50 mm × 1.6 mm, C u ar ea: 50%, single-side glass epoxy).
Note2: On PCB (S iz e: 60 mm × 30 mm × 1.6 mm, Cu ar ea: 30%, single-side glass epoxy).
TBD62064APG/FG
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Electrical Characteristics (Ta = 25°C unless otherwise noted)
Characteristics Symbol
Test
Circuit
Condition Min Typ. Max Unit
Output lea kage current Ileak 1 VIN = 0 V, VOUT = 50V
Ta = 85°C ― ― 1.0 μA
Output voltage
(Output ON-resistance) VDS
(RON) 2 IOUT = 1.25 A, VIN = 5.0 V ― 0.56
(0.45) 1.25
(1.0) V
(Ω)
IOUT = 0.75 A, VIN = 5.0 V ― 0.32
(0.43) 0.75
(1.0)
Input current (Output on) IIN (ON) 3 VIN = 2.5 V ― ― 0.2 mA
Input current (Output off) IIN (OFF) 4 VIN = 0 V, Ta = 85°C ― ― 1.0 μA
Input v oltage (Output on) VIN (ON) 5
I
OUT
=100 mA or upper,
VOUT = 2 V ― ― 2.5 V
Clamp diode
reverse cur r ent
IR 6 VR = 50 V, Ta = 85°C ― ― 1.0 μA
Clamp diode
forward voltage
VF 7 IF = 1.25 A ― ― 2.0 V
Turn−on delay tON 8 VOUT = 50 V
RL = 42 Ω
CL = 15 pF
― 1.0 ―
μs
Turn−off delay tOFF ― 1.7 ―
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Test circuit
1. Ileak 2. VDS (RON)
3. IIN (ON) 4. IIN (OFF)
5. VIN (ON) 6. IR
7. VF
Test circ ui t and timing chart may be simplified f or ex pl anatory purpose.
COMMON
OUTPUT
INPUT
GND
VOUT
COMMON
OUTPUT
INPUT
GND
IOUT
VIN
VDS
RON = VDS / IOUT
Ileak
COMMON
INPUT
GND
VIN
IIN(ON)
COMMON
INPUT
GND
IIN(OFF)
COMMON
OUTPUT
INPUT
GND
IOUT
VIN(ON)
VOUT
COMMON
OUTPUT
INPUT
GND
IR
VR
COMMON
OUTPUT
INPUT
GND
IF
VF
OUTPUT
OUTPUT
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8. tON, tOFF
Note 1: P ulse width 50 μs, Duty cycle 10%
Output i mpe dance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns, VIH = 5.0V
Note 2: CL includes t he probe and the test board capacitance.
Test circuit and timing chart may be simplified for explanat or y purpose.
Precautions for Us i ng
(1) This IC does not include built-in protection circuits for excess current or overvoltage. Therefore, if the short−circuit
between adjacent pins or between outputs, the short-to-power or ground fault has occurred, the current or voltage
beyond the absolute maximum rating is impressed, an d IC destroys.
When designing, please consider enough in power supply line, output line and GND line. In addition, so as not to
continue to flow a current that exceeds the absolute maximum rating of the IC, please insert the appropriate fuse in
the power supply line.
(2) This IC is being used to drive an inductive load (such as a motor, solenoid or relay), Toshiba recommends that the
diodes (pins 1 and 8) be connected to the secondary power supply pin so as to absorb the counter electromotive force
generated by the load. Please adhere to the device’s absolute m aximum ratings .
Toshiba recommends that zener diodes be connected between the diodes (pins 1 and 8) and the secondary power
supply pin (as the anode) so as to enable rapid absorption of the counter electromotive force. Again, please adhere to
the device’ s ab sol ute maximum ratings.
(Note2)
(Note1)
50 μs
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Package Dimensions
DIP16-P-300-2.54A Unit: mm
Weight: 1.11 g (Typ.)
HSOP16-P-300-1.00 Unit: mm
Weight: 0.50 g (Typ.)
TBD62064APG/FG
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Notes on Contents
1. Pin connection
Pin connect i on may be simplified for explanatory purpose.
2. Equivalent Circuits
Equivalent circuit may be simplified for explanatory purpose.
3. Timing chart
Timing charts may be s i m pli f ied for explanat or y purposes.
4. Test circuit
Test circuit may be simpl ified for explanatory purpose.
IC Usage Considerations
Notes on handling of ICs
(1) The abs olute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a
moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, dam age or
deterioration, and may result in injury by explosion or combustion.
(2) Do not insert devices in the wrong orientation or inco rr ec t ly. Mak e sure that the posi tive and negative terminals of
power suppl ies are connected properly.Otherwise, the current or power consumption may exceed the absolute
maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result
in injury by explosion or combustio n. In addition, do not use any device inserted in the wrong orientation or incorrectly
to which current is applied even jus t once.
(3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of
overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or
load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the
effects of the flow of a large current in the case of breakdown, appropriate settings , such as fuse capaci ty, fusing time
and insertion circuit location, are required.
(4) If your design includ es an i nduc tiv e load su ch as a motor coil, incor porate a protecti on cir cuit int o the desig n to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the
negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or
ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the
protection function may not operate, causing IC breakdown. IC breakdown may cause inj ury, smoke or ignition.
(5) Carefully selec t external components (such as inputs and negative feedback capacitors) and load components (such
as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as from input
or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a
speaker with low input withstand voltage, overcurrent or IC failure may caus e smoke or ignition. (The overcurrent may
cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL)
connection-type IC that inputs output DC voltage to a speaker directly.
Points to reme m ber on handling of ICs
Heat Radiation Design
When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is
appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition.
These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life,
deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the
effect of IC heat radiation with peripheral components.
Back-EMF
When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor’s power supply
owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power
supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take
the effect of back-EMF into consideration in system desig n .
TBD62064APG/FG
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in
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responsibl e for compl ying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimi ze risk and avoid situations in which a malfunction or fai l ure of Product could cause loss of human life, bodily i nj ury
or damage to property, including data loss or corruption. Before custom ers use the Product, create designs i ncludi ng the Product, or
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TOSHIBA information, includi ng without limitation, this document, the specifications, the data sheets and application notes for Product
and the precautions and conditi ons set fort h in the "TOSHIBA Semiconductor Reliabili t y Handbook" and (b) the inst ructions for the
applicat i on with which the Product will be used with or for. Cust om ers are solely responsibl e for all aspects of their own product design or
applicat i ons, includi ng but not limited to (a) determi ni ng the appropriateness of t he use of this Product in such design or applications; (b)
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