© 2018 IXYS CORPORATION, All Rights Reserved DS100523B(1/18)
High Voltage
Power MOSFET
Features
High Voltage package
Fast Intrinsic Diode
Avalanche Rated
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Blocking Voltage
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
IXTA3N150HV VDSS = 1500V
ID25 =3A
RDS(on)
7.3
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 1500 V
VDGR TJ= 25C to 150C, RGS = 1M1500 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C3A
IDM TC= 25C, Pulse Width Limited by TJM 9A
IATC= 25C3A
EAS TC= 25C 250 mJ
dv/dt IS IDM, VDD VDSS,T
J 150C 5 V/ns
PDTC= 25C 250 W
TJ- 55 ... +150 C
TJM 150 C
Tstg - 55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
Weight 2.5 g
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250A 1500 V
VGS(th) VDS = VGS, ID = 250A 2.5 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 10 A
TJ = 125C 100A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 7.3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G = Gate D = Drain
S = Source Tab = Drain
G
S
TO-263
D (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA3N150HV
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note: 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 2.2 3.6 S
Ciss 1375 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 90 pF
Crss 30 pF
td(on) 19 ns
tr 21 ns
td(off) 42 ns
tf 25 ns
Qg(on) 38.6 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 6.5 nC
Qgd 19.0 nC
RthJC 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 3 A
ISM Repetitive, Pulse Width Limited by TJM 12 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 0.9 μs
IRM 15.0 A
QRM 6.7 μC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5 (External)
IF = ID = 0.5 • ID25, -di/dt = 100A/s
VR = 100V, VGS = 0V
TO-263 (HV) Outline
PIN: 1 - Gate
2 - Source
3 - Drain
© 2018 IXYS CORPORATION, All Rights Reserved
IXTA3N150HV
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 4 8 12 16 20 24 28 32
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
4V
5.5V
5V
6V
Fig. 2. Output Characteristics @ T
J
= 125
o
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 5 10 15 20 25 30 35 40
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
4V
5V
Fig. 3. R
DS(on)
Normalized to I
D
= 1.5A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 3A
I
D
= 1.5A
Fig. 4. R
DS(on)
Normalized to I
D
= 1.5A Value vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Input Admittance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 20V
Fig. 5. Maximum Drain Current vs. Case Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA3N150HV
IXYS REF: T_3N150(4N)5-02-16-B
Fig. 7. Transconductance
0
1
2
3
4
5
6
7
0.00.51.01.52.02.53.03.5
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
V
DS
= 20V
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
1
2
3
4
5
6
7
8
9
0.30.40.50.60.70.80.91.0
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 9. Gate Charge
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 750V
I
D
= 1.5A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 12. Forward-Bias Safe Operating Area
0.01
0.1
1
10
10 100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150
o
C
T
C
= 25
o
C
Single Pulse
25μs
1ms
100μs
R
DS(on)
Limit
10ms
DC
100ms
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.