BTA06 T/D/S/A
BTB06 T/D/S/A
March 1995
SENSITIVE GATE TRIACS
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(360°conduction angle) BTA Tc = 85°C6 A
BTB Tc = 90°C
ITSM Non repetitive surge peak on-state current
( Tj initial = 25°C) tp = 8.3 ms 63 A
tp = 10 ms 60
I2tI
2
t value tp = 10 ms 18 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 50mA diG/dt = 0.1A/µsRepetitive
F = 50 Hz 10 A/µs
Non
Repetitive 50
Tstg
Tj Storage and operating junction temperature range - 40 to + 150
- 40 to + 110 °C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case 260 °C
TO220AB
(Plastic)
.VERY LOW IGT = 10mA max
.LOW IH= 15mA max
.BTAFamily :
INSULATINGVOLTAGE= 2500V(RMS)
(ULRECOGNIZED : E81734)
DESCRIPTION
Symbol Parameter BTA / BTB06- Unit
400 T/D/S/A 600 T/D/S/A 700 T/D/S/A
VDRM
VRRM Repetitive peak off-state voltage
Tj = 110°C400 600 700 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTA/BTB06 T/D/S/A triac family are high per-
formance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
A1
A2 G
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GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W
BTB 3.2
Rth (j-c) AC Junction to case for 360°conduction angle
( F= 50 Hz) BTA 3.3 °C/W
BTB 2.4
Symbol Test Conditions Quadrant Suffix Unit
TDSA
I
GT VD=12V (DC) RL=33ΩTj=25°C I-II-III MAX 5 5 10 10 mA
IV MAX 5 10 10 25
VGT VD=12V (DC) RL=33ΩTj=25°C I-II-III-IV MAX 1.5 V
VGD VD=VDRM RL=3.3kΩTj=110°C I-II-III-IV MIN 0.2 V
tgt VD=VDRM IG= 40mA
dIG/dt = 0.5A/µsTj=25°C I-II-III-IV TYP 2 µs
ILIG= 1.2 IGT Tj=25°C I-III-IV TYP 10 10 20 20 mA
II 20 20 40 40
IH*I
T
= 100mA gate open Tj=25°C MAX 15 15 25 25 mA
VTM *I
TM= 8.5A tp= 380µs Tj=25°C MAX 1.65 V
IDRM
IRRM VDRM Rated
VRRM Rated Tj=25°C MAX 0.01 mA
Tj=110°C MAX 0.75
dV/dt * Linear slope up to
VD=67%VDRM
gate open
Tj=110°C TYP 10 10 - - V/µs
MIN - - 10 10
(dV/dt)c * (dI/dt)c = 2.7A/ms Tj=110°C TYP 1 1 5 5 V/µs
* For either polarity of electrode A2voltage with reference to electrode A1.
PG (AV) =1W P
GM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA06 T/D/S/A / BTB06 T/D/S/A
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Package IT(RMS) VDRM /V
RRM Sensitivity Specification
AVTDSA
BTA
(Insulated) 6 400 XXXX
600 XXXX
700 XXXX
BTB
(Uninsulated) 400 XXXX
600 XXXX
700 XXXX
ORDERING INFORMATION
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
Fig.4 : RMS on-state current versus case temperature.Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
BTA06 T/D/S/A / BTB06 T/D/S/A
3/5
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles. Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
Fig.9 : On-state characteristics (maximum values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.1
1Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.5 : Relative vatiation of thermal impedance versus
pulse duration.
BTA06 T/D/S/A / BTB06 T/D/S/A
4/5
PACKAGE MECHANICAL DATA
TO220AB Plastic
I
==
AG
D
B
C
F
P
N
O
M
L
J
H
Cooling method : C
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A10.20 10.50 0.401 0.413
B14.23 15.87 0.560 0.625
C12.70 14.70 0.500 0.579
D5.85 6.85 0.230 0.270
F4.50 0.178
G2.54 3.00 0.100 0.119
H4.48 4.82 0.176 0.190
I3.55 4.00 0.140 0.158
J1.15 1.39 0.045 0.055
L0.35 0.65 0.013 0.026
M2.10 2.70 0.082 0.107
N4.58 5.58 0.18 0.22
O0.80 1.20 0.031 0.048
P0.64 0.96 0.025 0.038
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication orotherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
BTA06 T/D/S/A / BTB06 T/D/S/A
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