Semiconductor Components Industries, LLC, 2004
June, 2004 − Rev. 1 1Publication Order Number:
BC847ATT1/D
BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
Features
•Pb−Free Packages are Available*
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 45 V
Collector−Base Voltage VCBO 50 V
Emitter−Base Voltage VEBO 6.0 V
Collector Current − Continuous IC100 mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD200
1.6
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1) RJA 600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2) RJA 400 °C/W
Junction and Storage
Temperature Range TJ, Tstg −55 to
+150 °C
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
CASE 463
SC−75/SOT−41
6
STYLE 1
MARKING DIAGRAM
3
2
1
COLLECTOR
3
1
BASE
2
EMITTER
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xxM
xx = Device Code
M = Date Code
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
BC847ATT1, BC847BTT1, BC847CTT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown V oltage
(IC = 10 mA) BC847 Series V(BR)CEO 45 − − V
Collector−Emitter Breakdown V oltage
(IC = 10 A, VEB = 0) BC847 Series V(BR)CES 50 − − V
Collector−Base Breakdown V oltage
(IC = 10 A) BC847 Series V(BR)CBO 50 − − V
Emitter−Base Breakdown Voltage
(IE = 1.0 A) BC847 Series V(BR)EBO 6.0 − − V
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO −
−−
−15
5.0 nA
A
ON CHARACTERISTICS
DC Current Gain
(IC = 10 A, VCE = 5.0 V) BC847A
BC847B
BC847C
(IC = 2.0 mA, VCE = 5.0 V) BC847A
BC847B
BC847C
hFE −
−
−
110
200
420
90
150
270
180
290
520
−
−
−
220
450
800
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) −
−−
−0.25
0.6 V
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) −
−0.7
0.9 −
−V
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
−660
−700
770 mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
BC847ATT1, BC847BTT1, BC847CTT1
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3
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25°C
−55°C to +125°C
TA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
BC847ATT1, BC847BTT1, BC847CTT1
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4
BC847
Figure 5. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 6. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
7.0
5.0
3.0
2.0
C, CAPACITANCE (pF)
0.8 4.0 8.0
TA = 25°C
Cob
Cib
Figure 7. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
80
100
200
300
400
60
20
40
30
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
T
BC847ATT1, BC847BTT1, BC847CTT1
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5
ORDERING INFORMATION
Device Marking Package Shipping†
BC847ATT1 1E SC−75/SOT−416 3,000 / Tape & Reel
BC847BTT1 1F SC−75/SOT−416
BC847BTT1G 1F SC−75/SOT−416
(Pb−Free) 3,000 / Tape & Reel
BC847CTT1 1G SC−75/SOT−416
BC847CTT1G 1G SC−75/SOT−416
(Pb−Free) 3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
BC847ATT1, BC847BTT1, BC847CTT1
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6
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE C
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.70 0.90 0.028 0.035
B1.40 1.80 0.055 0.071
C0.60 0.90 0.024 0.035
D0.15 0.30 0.006 0.012
G1.00 BSC 0.039 BSC
H−−− 0.10 −−− 0.004
J0.10 0.25 0.004 0.010
K1.45 1.75 0.057 0.069
L0.10 0.20 0.004 0.008
S0.50 BSC 0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) B
−A−
−B−
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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USA/Canada
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2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
BC847ATT1/D
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