Three Phase Rectifier Bridges PSD 36 IdAVM VRRM = 35 A = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 36/08 PSD 36/12 PSD 36/14 PSD 36/16 PSD 36/18 ~ ~ ~ Symbol Test Conditions IdAVM IFSM TC = 62C, module TVJ = 45C t = 10 ms (50 Hz), sine VR = 0 t = 8.3 ms (60 Hz), sine 35 550 600 A A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 550 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1520 1520 A s 2 A s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1250 A s 2 A s -40 ... + 150 150 -40 ... + 150 C C C 2500 3000 V V 2 18 Nm lb. in 22 g 2 i dt TVJ TVJM Tstg VISOL 50/60 HZ, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. Maximum Ratings 2 2 Features * Package with 1/4" fast-on terminals * Isolation voltage 3000 V * Planar glasspassivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 148688 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with one screw * Space and weight savings * Improved temperature and power cycling capability Package, style and outline Dimensions in mm (1mm = 0.0394") Symbol Test Conditions Characteristic Value IR VR = VRRM VR = VRRM 0.3 2.0 mA mA VF VTO rT RthJC IF = 150 A TVJ = 25C For power-loss calculations only TVJ = TVJM 1.7 0.8 7.4 V V m per diode; DC current per module 7.5 1.25 K/W K/W RthJK per diode; DC current per module 8.4 1.4 K/W K/W dS dA a Creeping distance on surface Creeping distance in air Max. allowable acceleration 12.7 9.4 50 mm mm 2 m/s TVJ = 25C TVJ = TVJM POWERSEM GmbH, Walperdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/ PSD 36 IF(OV) -----IFSM 200 [A] 1:TVJ= 150C 2:TVJ= 25C IFSM (A) TVJ=45C TVJ=150C 1.6 480 4 10 2 As 500 150 1.4 1.2 100 10 3 TVJ=45C TVJ=150C 1 0 VRRM 50 0.8 1/2 VRRM IF 1 0.6 2 1 VRRM 0 10 0.5 1 1.5 VF[V] 2 0.4 2.5 80 [W] 70 1 100 Fig. 1 Forward current versus voltage drop per diode 2 101 t[ms] 102 103 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration 60 PSD 36N 0.41 0.1 = RTHCA [K/W] TC 65 2 4 t [ms] 6 10 2 Fig. 3 i dt versus time (1-10ms) per diode (or thyristor) { EMBED CorelDraw.Grafik.8 } 70 75 0.72 80 60 85 50 90 1.35 95 100 40 105 110 2.6 30 115 120 125 DC sin.180 rec.120 rec.60 rec.30 20 10 PVTOT 0 10 IFAVM 30 130 6.35 135 140 145 C 150 [A] 0 Tamb 50 100 [K] 150 Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature { EMBED CorelDraw.Grafik.8 } Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walperdorfer Str. 53 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 2003 POWERSEM reserves the right to change limits, test conditions and dimensions http://store.iiic.cc/