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© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 800 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW800 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C13A
IDM TC= 25°C, Note 1 6 0 A
IAR TC= 25 °C15A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS 5 V/ns
TJ£ 150°C, RG = 2 W
PDTC= 25°C 250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 3 00 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 800 V
VGS(th) VDS = VGS, ID = 4mA 2.0 4.5 V
IGSS VGS = ±20 V, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C 25 mA
VGS = 0 V TJ = 125°C 1 mA
RDS(on) VGS = 10 V, ID = 7.5A 0.60 W
Note 2
98590A (7/00)
ISOPLUS 247TM
GD
HiPerFETTM Power MOSFETs
ISOPLUS247TM Q Class
(Electrically Isolated Back Surface)
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
G = Gate D = Drain
S = Source
* Patent pending
Isolated back surface*
IXFR 15N80Q VDSS = 800 V
ID25 = 13A
RDS(on) = 0.60 W
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 7.5A Note 2 8 1 6 S
Ciss 4300 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3 60 p F
Crss 60 pF
td(on) 18 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 7.5A 2 7 ns
td(off) RG = 1 W (External), 53 ns
tf16 ns
Qg(on) 90 nC
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 7.5A 2 0 nC
Qgd 30 nC
RthJC 0.50 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 15 A
ISM Repetitive, Note 1 60 A
VSD IF = Is, 100A, VGS = 0 V, Note 2 1 . 5 V
trr 250 ns
QRM 0.8 mC
IRM 7.5 A
IF = Is, -di/dt = 100 A/ms, VR = 100 V
Note: 1. Pulse width limited by TJM
2 . Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXFR 15N80Q
ISOPLUS 247 (IXFR) OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
