Bay Linear Linear Excellence IRF540 POWER MOSFET Advance Information Description Features The Bay Linear MOSFET's provide the designers with the best combination of fast switching, ruggedized device design, low 0n-resistance and low cost-effectiveness. The TO-220 is offered in a 3-pin is universally preferred for all commercial-industrial applications at power dissipation level to approximately to 50 Watts. Also, available in a D2 surface mount power package with a power dissipation up to 2 Watts. * * * * * Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 100V RDS (ON) = 0.077 ID =28A Ordering Information Device IRL540T IRL540S Package Temp. TO-220 TO-263 ( D2 ) 0 to 150C 0 to 150C Absolute Maximum Rating ID@ TC =25C ID@ TC =100C IDM PD @ TC =25C PD @ TA =25C VGS VGS EAS EAS IAR EAR dv/dt TJ, TSTG Parameter Max Unit Continuous Drain Current, VGS @10V Continuous Drain Current, VGS @10V Pulsed Drain Current Power Dissipation Power Dissipation ( PCB Mount, D2 ) (1) Linear Derating Factor Linear Derating Factor ( PCB Mount, D2 ) (1) Gate-to- Source Voltage ( TO-220 ) Gate-to- Source Voltage ( D2 ) Single Pulse Avalanche Energy ( TO-220 ) (2a) Single Pulse Avalanche Energy ( D2 ) (2b) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction & Storage Temperature Range Soldering Temperature, for 10 seconds 28 20 110 150 3.7 1.0 0.025 20 10 230 440 28 15 5.5 -55 to +175 300 (1.6mm from case) A W W/C V mJ A mJ V/ns C Thermal Resistance RJC RCS RJA RJA Bay Linear, Inc Parameter Min Typ Junction-to Case Case-to-Sink, Flat, Greased Surface ( TO-220) Junction-to Ambient ( PCB Mount, D2 ) Junction-to Ambient - 0.50 - - 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 Max Units 1.0 40 62 C/W www.baylinear.com IRF540 Electrical Characteristics ( TC = Symbol Parameter VGS(TH) Drain-to-source Breakdown Voltage Breakdown Voltage Temperature Coefficient On-State Drain Current (note 2) Static Drain-to-Source On-Resistance Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS V(BR)DSS / TJ ID(ON) RDS(ON) 25C unless otherwise specified) Conditions Min VGS = 0V, ID = 250A 100 Reference to 25C, ID = 1mA - TO-220: VGS = 10V, ID = 17A D2: VGS = 5V, ID = 17A (note 4) VDS = VGS,ID = 250A VDS = 50V, ID = 17A VDS=100V,VGS=0V VDS=80V,VGS=0V,TJ=150C QG Qqs td ( on) tf td (off) tr LD Internal Drain Inductance LS Ciss COSS Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Between lead 6mm(0.25in.) from package and center or die contact IGSS Crss 0.13 Units - V/C 28 A 0.077 2.0 - - V 8.7 - - S - - 25 250 A - - VGS = 20V 100 VGS = -20V ID=17V VDS=80V VDD=50V RD=2.9 RG=9.1 ID=17A Max V VGS > ID(ON) x RDS(ON)Max Drain-to -Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate- to -Source Charge Turn-On Delay Time Fall Time Turn -Off Delay Time Rise Time IDSS Typ nA -100 - 11 43 53 44 4.5 72 11 - VGS=0V VDS=25V - 7.5 1700 560 - F =1.0MHZ - 120 - nC ns nH pF Source-Drain Rating Characteristics Symbol Parameter Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time IS ISM Min Typ Max Units - - 28 - - 110 A 2.5 V TJ=25C, IS=28A,VGS=DV 180 360 ns TJ=25 C, IF=17A 1.3 2.8 C di/dt=100A/s Intrinsic turn-on time is negligible (turn-on is dominated by (LS+LD) Notes: 1. Repetitive Rating; pulse width limited by max. junction temperature. 2a. VDD = 25V, starting Tj = 25C, L = 440H RG = 25, IAS = 28A 2b. VDD = 25V, starting Tj = 25C, L = 841H RG = 25, IAS = 28A 3. ISD 28A, di/dt 170A/s, VDD V(BR)DSS, Tj 150C 4. Pulse with 300s; duty cycle 2% Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com Advance Information- These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations, computer simulations and/ or initial prototype evaluation. Preliminary Information- These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges. The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different applications. Customer's technical experts must validate all operating parameters including " Typical" for each customer application. LIFE SUPPORT AND NUCLEAR POLICY Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of Bay Linear President. Bay Linear, Inc 2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 606-5950, Fax: (925) 940-9556 www.baylinear.com