Rev 1: June 2004 AO4430, AO4430L (Green Product) N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430L (Green Product) is offered in a lead free package. VDS (V) = 30V ID = 18A RDS(ON) < 5.5m (VGS = 10V) RDS(ON) < 7.5m (VGS = 4.5V) D S S S G D D D D G S SOIC-8 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 20 V 80 3 W 2.1 TJ, TSTG C -55 to 150 Symbol t 10s Steady-State Steady-State A 15 PD TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V 18 TA=25C Power Dissipation Maximum 30 RJA RJL Typ 31 59 16 Max 40 75 24 Units C/W C/W C/W AO4430, AO4430L Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 80 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=18A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge 2.5 V A 8 VGS=4.5V, ID=15A 6.2 7.5 VDS=5V, ID=18A 82 DYNAMIC PARAMETERS Ciss Input Capacitance Rg nA 5.5 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 1.8 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=18A A 100 6.5 Forward Transconductance Output Capacitance 5 4.7 TJ=125C VSD Crss V TJ=55C gFS Units 1 Zero Gate Voltage Drain Current Coss Max 30 VDS=24V, VGS=0V IDSS IS Typ 0.7 m m S 1 V 4.5 A 6060 pF 638 pF 355 pF 0.45 103 nC 48 nC 18 nC Qgs Gate Source Charge Qgd Gate Drain Charge 15 nC tD(on) Turn-On DelayTime 12 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.83, RGEN=3 8 ns 51.5 ns 8.8 ns IF=18A, dI/dt=100A/s 33.5 ns nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=100A/s 22 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO4430, AO4430L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 50 4.5V VDS=5V 3.5V 40 30 ID(A) ID (A) 40 3.0V 20 125C 30 20 25C 10 10 VGS=2.5V 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 7.0 1.6 Normalized On-Resistance 6.5 VGS=4.5V 6.0 RDS(ON) (m) 2 5.5 5.0 VGS=10V 4.5 4.0 3.5 VGS=4.5V ID=18A 1.4 VGS=10V 1.2 1 0.8 0 20 40 60 80 100 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 16 1.0E+01 12 1.0E+00 IS (A) RDS(ON) (m) ID=18A 125C 8 125C 25C 1.0E-02 1.0E-03 25C 4 1.0E-01 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4430, AO4430L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 Capacitance (pF) 8 VGS (Volts) 8000 VDS=15V ID=18A 6 4 2 Ciss 6000 4000 2000 0 Crss 0 0 20 40 60 80 100 120 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 100s 10ms 10.0 TJ(Max)=150C TA=25C 25 30 60 40 20 0 0.001 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) 10 20 TJ(Max)=150C TA=25C 80 1ms 0.1s 0.1 15 100 10s 1s 10s DC 1.0 10 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) ID (Amps) 100.0 ZJA Normalized Transient Thermal Resistance Coss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000