MRF8P23080HR3 MRF8P23080HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
!Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 280 mA, VGSB =0.7Vdc,P
out = 16 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz 14.6 42.0 6.7 --29.5
2350 MHz 14.7 41.6 6.8 --31.5
2400 MHz 14.6 41.4 6.6 --32.5
!Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
!Typical Pout @ 3 dB Compression Point ≃100 Watts CW
Features
!Production Tested in a Symmetrical Doherty Configuration
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
!Internally Matched for Ease of Use
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
!Designed for Digital Predistortion Error Correction Systems
!RoHS Compliant
!NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel.
!NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 #C
Case Operating Temperature TC150 #C
Operating Junction Temperature (1,2) TJ225 #C
CW Operation @ TC=25#C
Derate above 25#C
CW 168
2.39
W
W/#C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8P23080H
Rev. 1, 11/2010
Freescale Semiconductor
Technical Data
2300--2400 MHz, 16 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P23080HR3
MRF8P23080HSR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P23080HSR3
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P23080HR3
$Freescale Semiconductor, Inc., 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 72#C, 16 W CW, 28 Vdc, IDQA = 280 mA, VGSB = 0.7 V, 2300 MHz
Case Temperature 80#C, 80 W CW(3),28Vdc,I
DQA = 280 mA, VGSB = 0.7 V, 2300 MHz
R%JC
0.89
0.55
#C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 &Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 &Adc
On Characteristics (4)
Gate Threshold Voltage
(VDS =10Vdc,I
D=75&Adc)
VGS(th) 1.0 1.8 2.5 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 280 mAdc, Measured in Functional Test)
VGS(Q) 1.9 2.6 3.4 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=0.75Adc)
VDS(on) 0.1 0.23 0.3 Vdc
Functional Tests (5,6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 280 mA, VGSB =0.7Vdc,P
out =16WAvg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
on 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Power Gain Gps 13.5 14.6 18.5 dB
Drain Efficiency "D38.0 42.0 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.0 6.7 —dB
Adjacent Channel Power Ratio ACPR —--29.5 --27.0 dBc
Typical Broadband Performance (6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 280 mA, VGSB =0.7Vdc,
Pout = 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz 14.6 42.0 6.7 --29.5
2350 MHz 14.7 41.6 6.8 --31.5
2400 MHz 14.6 41.4 6.6 --32.5
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration (continued)
MRF8P23080HR3 MRF8P23080HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA=25#C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 280 mA, VGSB =0.7Vdc,
2300--2400 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —55 — W
Pout @ 3 dB Compression Point, CW P3dB —100 — W
IMD Symmetry @ 20 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—30 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —55 —MHz
Gain Flatness in 100 MHz Bandwidth @ Pout =16WAvg. GF—0.1 —dB
Gain Variation over Temperature
(--30#Cto+85#C)
(G — 0.013 —dB/#C
Output Power Variation over Temperature
(--30#Cto+85#C) (2)
(P1dB —0.005 —dB/#C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
Figure 2. MRF8P23080HR3(HSR3) Test Circuit Component Layout
MRF8P23080H
Rev. 1
C10
VGA
Z1
CUT OUT AREA
VGB
C6 C5
C4
C2
C3
C9
C8
R1
C12 C11
C1
C7
VDB
C21
C22
C23
C13
C19
C14
C20
C15
C16
C17 VDA
C24
C18
C
P
Table 5. MRF8P23080HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C7 0.8 pF Chip Capacitors ATC600F0R8JT250XT ATC
C2, C8, C13, C19 1.0 pF Chip Capacitors ATC600F1R0JT250XT ATC
C3, C9 18 pF Chip Capacitors ATC600F180JT250XT ATC
C4, C5, C10, C11 8.2 pF Chip Capacitors ATC600F8R2JT250XT ATC
C6, C12, C16, C22 1.0 &F, 50 V Chip Capacitors GRM21BR71H105KA12L Murata
C14, C20 10 pF Chip Capacitors ATC600F100JT250XT ATC
C15, C21 5.6 pF Chip Capacitors ATC600F5R6JT250XT ATC
C17, C23 10 &F, 50 V Chip Capacitors GRM55DR61H106KA88L Murata
C18, C24 470 &F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
R1 50 ), 1/4 W Chip Resistor CRCW120650R0FKEA Vishay
Z1 2500 MHz Band 90#, 3 dB Chip Hybrid Coupler GSC356--HYB2500 Soshin
PCB 0.020*,+r=3.5 RO4350B Rogers
MRF8P23080HR3 MRF8P23080HSR3
5
RF Device Data
Freescale Semiconductor
4
,
2
,
2
,
4
,
2
,
2
,
Single--ended
Quadrature combined
Doherty
Push--pull
4
,
4
,
4
,
4
,
Figure 3. Possible Circuit Topologies
6
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
TYPICAL CHARACTERISTICS
2290
ACPR
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 16 Watts Avg.
14
15
14.9
14.8
-- 3 6
44
43
42
41
-- 2 6
-- 2 8
-- 3 0
-- 3 2
"D, DRAIN
EFFICIENCY (%)
Gps, POWER GAIN (dB)
14.7
14.6
14.5
14.4
14.3
14.2
14.1
2305 2320 2335 2350 2365 2380 2395 2410
40
-- 3 4
PARC
PARC (dB)
-- 2
0
-- 0 . 5
-- 1
-- 1 . 5
-- 2 . 5
ACPR (dBc)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 2 0
-- 3 0
-- 4 0
-- 6 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
IM7--U
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
-- 5
20
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 30 40 60
30
60
55
50
45
40
35
"D-DRAIN EFFICIENCY (%)
--1dB=18.6W
50
"D
ACPR
PARC
ACPR (dBc)
-- 3 4
-- 2 2
-- 2 4
-- 2 6
-- 3 0
-- 2 8
-- 3 2
17
Gps, POWER GAIN (dB)
16
15
14
13
12
11
Gps
IM7--L
IM5--U
IM5--L
VDD =28Vdc,P
out = 20 W (PEP)
IDQA = 280 mA, VGSB =0.7Vdc
VDD =28Vdc,P
out =16W(Avg.),I
DQA = 280 mA
VGSB = 0.7 Vdc, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
"D
IM3--U
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz IM3--L
--2dB=27.5W
--3dB=37.5W
VDD =28Vdc,I
DQA = 280 mA, VGSB = 0.7 Vdc, f = 2350 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input
Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
Gps
MRF8P23080HR3 MRF8P23080HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
9
15
0
60
50
40
30
20
"D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
14
13
10 100
10
-- 6 0
ACPR (dBc)
12
11
10
0
-- 3 0
-- 4 0
-- 5 0
Figure 8. Broadband Frequency Response
0
18
2050
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 280 mA
VGSB =0.7Vdc
12
9
6
2125
GAIN (dB)
15 Gain
2200 2275 2350 2425 2500 2575 2650
3
VDD =28Vdc,I
DQA = 280 mA, VGSB =0.7Vdc
2300 MHz
2350 MHz
2400 MHz
2300 MHz
2350 MHz
2400 MHz
"D
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
W--CDMA TEST SIGNAL
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
13579
8
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
VDD =28Vdc,I
DQA = 280 mA
f
MHz
Max Pout (1) Zsource
)
Zload
)
Watts dBm
2300 58 47.6 8.42 -- j14.3 3.51 -- j5.02
2350 55 47.4 11.4 -- j13.4 3.75 -- j5.03
2400 55 47.4 17.7 -- j9.34 3.14 -- j5.63
(1) Maximum output power measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Figure 11. Carrier Side Load Pull Performance — Maximum P1dB Tuning
Zsource Zload
Input
Load Pull
Tuner
Device
Under
Test
Output
Load Pull
Tuner
VDD =28Vdc,I
DQA = 280 mA
f
MHz
Max Eff. (1)
%
Zsource
)
Zload
)
2300 60.9 8.41 -- j14.3 7.02 -- j3.44
2350 60.1 11.4 -- j13.4 6.84 -- j2.41
2400 60.0 17.7 -- j9.35 6.53 -- j2.92
(1) Maximum efficiency measurement reflects pulsed 1 dB gain
compression.
Zsource = Test circuit impedance as measured from gate contact to
ground.
Zload = Test circuit impedance as measured from drain contact to
ground.
Figure 12. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
Zsource Zload
Device
Under
Test
Output
Load Pull
Tuner
Input
Load Pull
Tuner
MRF8P23080HR3 MRF8P23080HSR3
9
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
30
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQA = 280 mA,
Pulsed CW, 10 &sec(on), 10% Duty Cycle
50
47
38
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
44
51.5
54.5
37.52422.5
53
41
21
Ideal
Actual
27 33 36
2350 MHz
2400 MHz
2300 MHz
48.5
45.5
42.5
39.5
34.531.528.525.5
2350 MHz
2300 MHz
2400 MHz
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
2300 59 47.7 69 48.4
2350 58 47.6 68 48.3
2400 54 47.3 68 48.3
Test Impedances per Compression Level
f
(MHz)
Zsource
)
Zload
)
2300 P1dB 8.40 -- j14.3 3.60 -- j5.30
2350 P1dB 11.4 -- j13.4 3.70 -- j5.20
2400 P1dB 17.7 -- j9.30 3.10 -- j5.10
Figure 11. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
10
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
PACKAGE DIMENSIONS
MRF8P23080HR3 MRF8P23080HSR3
11
RF Device Data
Freescale Semiconductor
12
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
MRF8P23080HR3 MRF8P23080HSR3
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
!.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0May 2010 !Initial Release of Data Sheet
1Nov. 2010 !Updated frequency in overview paragraph from “2300 to 2400 MHz” to “2300 to 2620 MHz” to show the
broadband performance of the part, p. 1
!In Table 2, Thermal Characteristics, Pout = 16 W CW thermal resistance value changed from 0.91 to
0.89_C/W and Pout = 80 W CW thermal resistance value changed from 0.91 to 0.55_C/W. Thermal
values now reflect the use of the combined dissipated power from the carrier amplifier and peaking
amplifier, p. 2.
!Broadband IRL data removed from Fig. 4, Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance and Fig. 8, Broadband Frequency Response graphs. Data not valid indicator of
product performance due to circuit implementation, p. 6, 7.
MRF8P23080HR3 MRF8P23080HSR3
15
RF Device Data
Freescale Semiconductor
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Document Number: MRF8P23080H
Rev. 1, 11/2010
