SFH 331
SMT Multi TOPLED
2000-01-01 1 OPTO SEMICONDUCTORS
Wesentliche Merkmale
• SMT-Gehäuse mit rotem Sender (635 nm) und
Si-Fototransistor
• Geeignet für SMT-Bestückung
• Gegurtet lieferbar
• Sender und Empfänger getrennt ansteuerbar
• Geeignet für IR-Reflow Löten
Anwendungen
• Datenübertragung
• Wegfahrsperre
• Infrarotschnittstelle
Typ
Type Bestellnummer
Ordering Code
SFH 331 Q62702-P1634
Features
• SMT package with red emitter (635 nm) and
Si-phototransistor
• Suitable for SMT assembly
• Available on tape and reel
• Emitter and detector can be controlled
separately
• Suitable for IR-reflow soldering
Applications
• Data transmission
• Lock bar
• Infrared interface
2000-01-01 2 OPTO SEMICONDUCTORS
SFH 331
Note: Die angegebenen Grenzdaten gelten für den Chip, für den sie angegeben sind, unabhängig vom
Betriebszustand des anderen.
The stated max. ratings refer to the specified chip regardless of the operating status of the other
one.
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
LED Transistor
Betriebstemperatur
Operating temperature range Top – 40 …+ 100 – 40 … + 100 °C
Lagertemperatur
Storage temperature range Tstg – 40 … + 100 – 40 … + 100 °C
Sperrschichttemperatur
Junction temperature Tj+ 100 + 100 °C
Durchlaßstrom (LED)
Forward current (LED) IF30 – mA
Kollektorstrom (Transistor)
Collector current (Transistor) IC–15mA
Stoßstrom
Surge current
t≤10 µs, D = 0.005
IFM 500 75 mA
Sperrspannung (LED)
Reverse voltage (LED) VR5–V
Kollektor-Emitter Spannung (Transistor)
Collector-emitter voltage (Transistor) VCE –35V
Verlustleistung
Power dissipation Ptot 100 165 mW
Wärmewiderstand Sperrschicht/Umgebung
Thermal resistance junction/ambient
Montage auf PC-Board1)
(Padgröße ≥ 16 mm2)
mounting on pcb1) (pad size ≥ 16 mm2)
Sperrschicht / Lötstelle
junction / soldering joint
RthJA
RthJS
450
350
450
–
K/W
K/W
1) PC-board: G30/FR4
SFH 331
2000-01-01 3 OPTO SEMICONDUCTORS
Kennwerte LED (TA = 25 °C)
Characteristics LED
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge des emittierten Lichtes (typ.)
Wavelength at peak emission (typ.)
IF = 10 mA
λpeak 635 nm
Dominantwellenlänge (typ.)
Dominant wavelength (typ.)
IF = 10 mA
λdom 628 nm
Spektrale Bandbreite bei 50% von Ιrel max (typ.)
Spectral bandwidth at 50% of Ιrel max (typ.)
IF= 10 mA
∆λ 45 nm
Abstrahlwinkel bei 50% von ΙV(Vollwinkel)
Viewing angle at 50% of ΙV
2ϕ120 Grad
deg.
Durchlaßspannung (typ.)
Forward voltage (max.)
IF = 10 mA
VF
VF
2.0
2.6 V
V
Sperrstrom (typ.)
Reverse current (max)
VR = 5 V
IR
IR
0.01
10 µA
µA
Kapazität, (typ.)
Capacitance
VR = 0 V, f = 1 MHz
Co12 pF
Schaltzeiten:
Switching times:
ΙV from 10% to 90% (typ.)
ΙV from 90% to10% (typ.)
IF = 100 mA, tp= 10 µs, RL = 50 Ω
tr
tf
300
150 ns
ns
Lichtstärke (Gruppe JK) (typ.)
Luminous intensity (group JK)
IF = 10 mA
IV6 (4.0 …12.5) mcd
2000-01-01 4 OPTO SEMICONDUCTORS
SFH 331
Kennwerte Fototransistor (TA = 25 °C, λ = 950 nm)
Characteristics Phototransistor
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 860 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ380 …1150 nm
Bestrahlungsempfindliche Fläche (∅ 240 µm)
Radiant sensitive area (∅ 240 µm) A0.045 mm2
Abmessungen der Chipfläche
Dimensions of chip area L×B0.45 ×0.45 mm ×mm
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip surface to case surface H0.5 …0.7 mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Kapazität
Capacitance
VCE = 0 V, f= 1 MHz, E = 0
CCE 5.0 pF
Dunkelstrom
Dark current
VCE = 25 V, E = 0
ICEO 1 (≤200) nA
Fotostrom
Photocurrent
Ee = 0.1 mW/cm2,VCE = 5 V
IPCE ≥16 µA
Anstiegszeit/Abfallzeit
Rise time/Fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr,tf7µs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = 5 µA, Ee = 0.1 mW/cm2
VCEsat 150 mV
SFH 331
2000-01-01 5 OPTO SEMICONDUCTORS
LED Radiation Characteristics Ιrel = f (ϕ)
Phototransistor Directional Characteristics Srel = f (ϕ)
LED Relative Spectral Emission Ιrel = f (λ), TA = 25 °C, IF=20 mA
V(λ) = Standard Eye Response Curve
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚ OHL01660
50˚
60˚
70˚
80˚
90˚
100˚ 0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
%
rel
λ
OHL02350
V
λ
100
80
60
40
20
0400 450 500 550 600 650 700
nm
Φ
super-red
SFH 331
2000-01-01 6 OPTO SEMICONDUCTORS
Forward Current
IF=f(VF), TA = 25 °C
Max. Permissible Forward Current
IF = f(TA)
Forward Current
VF=f(TA), IF = 10 mA
10
-1
V
5
super-red
OHL02351
Ι
F
F
V
0
10
1
10
2
10
5
mA
1.0 1.4 1.8 2.2 2.6 3.0 3.4
60 OHL01661
Ι
F
0100604020
A
800
T
10
20
30
40
50
˚C
mA
green
super-red
orange
yellow pure-green
1.4
OHL02106
V
F
˚C
A
T
0 20406080100
1.6
1.8
2.0
2.2
V
2.4
Rel. Luminous Intensity
ΙV/ΙV(10mA) =f(IF), TA = 25 °C
Wavelength at Peak Emission
λpeak =f(TA), IF= 20 mA
Rel. Luminous Intensity
ΙV/ΙV(25 ˚C) = f(TA), IF = 10 mA
V
V
(10mA)
10
-1 0
10 10
12
10
mA
10
-3
5
OHL02316
F
Ι
5
-2
10
5
-1
10
0
10
1
10
ΙΙ
55
super-red
green
yellow
orange
super-red
pure-green
550
OHL02104
λ
peak
˚C
A
T
0 20406080100
570
590
610
630
650
nm
690
yellow
green
orange
super-red
pure-green
0.0
OHL02150
˚C
A
T
0 20406080100
V
V
ΙΙ
0.4
0.8
1.2
1.6
2.0
(25 ˚C)
Perm. Pulse Handling Capability
IF = f(tp), duty cycle D = parameter,
TA = 25 °C
Dominant Wavelength
λdom =f(TA), IF = 20 mA
OHL01686
s10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
D
Ι
TT
P
F
t
P
=
D
=0.005
0.01
0.02
0.05
0.2
0.5
DC
10
1
5
Ι
F
t
2
10
0.1
p
10
3
mA
yellow
green
orange
super-red
pure-green
550
OHL02105
λ
dom
˚C
A
T
0 20406080100
570
590
610
630
650
nm
690
SFH 331
2000-01-01 7 OPTO SEMICONDUCTORS
Phototransistor
Rel. Spectral Sensitivity Srel = f (λ)
Total Power Dissipation
Ptot =f(TA)
Dark Current
ICEO = f (TA), VCE = 5 V, E=0
λ
OHF01121
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
T
OHF01530
A
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
-25
nA
0 25 50 75 100
˚C
Photocurrent
IPCE = f (VCE), Ee = Parameter
Capacitance
CCE = f (VCE), f = 1 MHz, E= 0
Photocurrent
IPCE = f (Ee), VCE = 5 V
V
OHF01529
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
E
OHF01924
e
PCE
Ι
10
-1
10
-3
10
-2
10
0
10
0
10
1
10
2
10
3
2
mW/cm
2
3
4
µ
A
Dark Current
ICEO = f (VCE), E= 0
Photocurrent
IPCE/IPCE25˚ = f (TA), VCE = 5 V
V
OHF01527
CE
CEO
Ι
-3
10
10
-2
10
-1
10
0
10
1
0 5 10 15 20 25 30 35V
nA
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
2000-01-01 8 OPTO SEMICONDUCTORS
SFH 331
Maßzeichnung
Package Outlines
Maße in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified.
GPL06924
CA
EC
32
41 0.4
0.6
0.18
0.12
typ
0.1
0.5
1.1
3.7
3.3
0.7
0.9
1.7
2.1
0.6
0.8
2.3
2.1
2.6
3.0
3.0
3.4
(2.4)
Package marking
Emission color : super-red
