BTA208S-800B,118 - WEEN SEMICONDUCTOR(HONG KONG)CO.,LIMITED

BTA208S-800B

3Q Hi-com Triac

1 June 2018 Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface mountable

plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can

occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction

temperature without the aid of a snubber.

2. Features and benefits

•3Q technology for improved noise immunity

•High commutation capability with maximum false trigger immunity

•High immunity to false turn-on by dV/dt

•High voltage capability

•Less sensitive gate for very high noise immunity

•Planar passivated for voltage ruggedness and reliability

•Surface mountable package

•Triggering in three quadrants only

3. Applications

•Electronic thermostats

•General purpose motor controls

•Rectifier-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-

state voltage

- - 800 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1;

Fig. 2; Fig. 3

- - 8 A

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- - 65 AITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

- - 72 A

Tjjunction temperature - - 125 °C

Static characteristics

IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

2 18 50 mA

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

2 21 50 mA

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

2 34 50 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 31 60 mA

VTon-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 535 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

1000 4000 - V/µs

dIcom/dt rate of change of

commutating current

VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;

dVcom/dt = 20 V/µs; snubberless

condition; gate open circuit; Fig. 12

- 14 - A/ms

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

2 T2 main terminal 2

3 G gate

mb T2 mounting base; main

terminal 2

DPAK (SOT428)

sym051

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BTA208S-800B DPAK plastic single-ended surface-mounted package (DPAK); 3 leads

(one lead cropped)

SOT428

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 3 / 13

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state

voltage

- 800 V

IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig. 1;

Fig. 2; Fig. 3

- 8 A

full sine wave; Tj(init) = 25 °C; tp = 20 ms;

Fig. 4; Fig. 5

- 65 AITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 72 A

I2t I2t for fusing tp = 10 ms; SIN - 21 A²s

dIT/dt rate of rise of on-state

current

IG = 100 mA - 100 A/µs

IGM peak gate current - 2 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

Tmb (°C)

- 50 1501000 50

003aaf581

IT(RMS)

102 °C

(A)

Fig. 1. RMS on-state current as a function of mounting

base temperature; maximum values

surge duration (s)

10- 2 10110- 1

003aaf617

IT(RMS)

(A)

f = 50 Hz; Tmb = 102 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 4 / 13

003aaf618

Ptot

IT(RMS) (A)

0 1084 62

(W)

101

105

109

117

121

125

113

Tmb(max)

(°C)

α = 180°

120°

90°

60°

30°

conduction

angle

(degrees)

form

factor

120

180

2.8

2.2

1.9

1.57

α = conduction angle

a = form factor = IT(RMS) / IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

003aaa968

ITSM

number of cycles

1 103

102

(A)

TSM

j(init)

= 25 °C max

1/f

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 5 / 13

003aab121

tp(ms)

10- 2 102

1010- 1 1

102

103

ITSM

(A)

(1)

j(init)

C m

tp ≤ 20 ms

(1) dIT/dt limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 6 / 13

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

full cycle; Fig. 6 - - 2 K/WRth(j-mb) thermal resistance

from junction to

mounting base half cycle; Fig. 6 - - 2.4 K/W

Rth(j-a) thermal resistance

from junction to

ambient free air

printed circuit board (FR4) mounted - 75 - K/W

003aaf584

tp(s)

10- 5 1 1010- 1

10- 2

10- 4 10- 3

10- 1

Zth(j-mb)

(K/W)

10- 2

unidirectional

bidirectional

Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 7 / 13

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

2 18 50 mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

2 21 50 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

2 34 50 mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 8

- 31 60 mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 8

- 34 90 mA

ILlatching current

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 8

- 30 60 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 31 60 mA

VTon-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 11

- 0.7 1 VVGT gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 125 °C;

Fig. 11

0.25 0.4 - V

IDoff-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 535 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

1000 4000 - V/µs

dIcom/dt rate of change of

commutating current

VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;

dVcom/dt = 20 V/µs; snubberless

condition; gate open circuit; Fig. 12

- 14 - A/ms

tgt gate-controlled turn-on

time

ITM = 12 A; VD = 800 V; IG = 0.1 A; dIG/

dt = 5 A/µs

- 2 - µs

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 8 / 13

Tj(°C)

- 50 1501000 50

003aac888

(1)

(2)

(3)

IGT

IGT(25°C)

(1) T2- G-

(2) T2+ G-

(3) T2+ G+

Fig. 7. Normalized gate trigger current as a function of

junction temperature

Tj (°C)

-50 1501000 50

001aab100

IL(25°C)

Fig. 8. Normalized latching current as a function of

junction temperature

Tj (°C)

-50 1501000 50

001aab099

IH(25°C)

Fig. 9. Normalized holding current as a function of

junction temperature

003aaa971

VT(V)

0 321

(A)

(1) (2) (3)

Vo = 1.264 V; Rs = 0.0378 Ω

(1) Tj = 125 °C; typical values

(2) Tj = 125 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig. 10. On-state current as a function of on-state

voltage

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 9 / 13

Tj (°C)

-50 1501000 50

001aab101

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Fig. 11. Normalized gate trigger voltage as a function of

junction temperature

001aac675

Tj(°C)

20 14010060

102

103

dlcom/dt

(A/ms)

Fig. 12. Rate of rise of commutating current as a

function of junction temperature; typical values

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 10 / 13

10. Package outline

Fig. 13. Package outline DPAK (SOT428)

WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 11 / 13

11. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

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multiple devices. The latest product status information is available on

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WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 12 / 13

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WeEn Semiconductors BTA208S-800B

3Q Hi-com Triac

Product data sheet 1 June 2018 13 / 13

12. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 3

8. Thermal characteristics............................................... 6

9. Characteristics.............................................................. 7

10. Package outline........................................................ 10

11. Legal information..................................................... 11

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Date of release: 1 June 2018