PROGRAMMABLE THRESHOLD COUPLER ISOLATION | CURRENT TYPICAL rion VOLTAGE (Vpy)| TRANSFER USEC.) Vee Isat) . MIN. RATIO MIN. Tr Tr . H11A10 1500 a 2 2 GE TYPE AC INPUT COUPLER H11AA1 H11AA2 HIGH VOLTAGE COUPLER 2500 1500 1500 1500 1500 1775 Vas PHOTO DARLINGTON OUTPUT H11B1 2500 H11B2 1500 H11B3 1500 H11B255 1500 H15B1 4000 Vams H15B2 4000 Vams 4N29 2500 4N29A 1775 Vrms 4N30 1500 4N31 1500 4N32 2500 4N33 4N32A 1775 Vans 1500 PHOTO SCR OUTPUT ISOLATION | If TRIGGER] tp 100C | BLOCKING TYPICAL GE TYPE VOLTAGE MIN. ) | (MAX.) uA | VOLTAGE (MIN.)| TON @sec.) | YF (MAX) PHOTON COUPLED INTERRUPTER MODULE PAGE BVEco TYPICAL Vce(sat) Ip (nA NO. OUTPUT CURRENT p (nA) (Vv) [TON GSEQ) [ty (SEC) MAX, H13A1 Ip = 20mA 200uA 30 : H13A2 Tr = 20mA SOKA 30 H13B1 Ir = 20mA 2500HA 25 H13B2 IF = 20mA 1000HA 25 GE TYPE MATCHED EMITTER DETECTOR PAIRS 129 Ga As Infrared Emitting Diode & Light Activated SCR The General Electric H11C4, H11C5 and H11C6 are gallium Photon Coupled Isolator H11C4 - HTICS ~HTICG iNCH MILLIMETER arsenide, infrared emitting diodes coupled with light activated 4 mol Spon et Seoese fees T = 8 OO REFI7.62 REF 2 silicon controlled rectifiers in a dual in-line package. fF | ST 1S | ore B89 aoclSoe] 2 : . ar, o tT | c |corvem] E 200) so8 | 4 absolute maximum ratings: (25C) | \ | LL | ease fie fs > 4 .08 5) 2.16 5 INFRARED EMITTING DIODE reg mie os 908) 8174597 997 Power Dissipation *100 milliwatts +t 7 m/l sre] elas | Forward Current (Continuous) 60 miltiamps ly scaring 5b lAcHI ! S. 298) 2balert [rte Forward Current (Peak) 3 ampere = re iT | rL Tae al nape nga (Pulse width lusec 300 P Ps) 301 Loa al fr, 2 letutted position lead centers. Reverse Voltage 6 volts a Tnese mmensurementa re made fram the seat *Derate 1.33mW/C above 25C ambient. sro pees. TOTAL DEVICE PHOTO SCR Storage Temperature -55 to 150C Peak Forward Voltage 400 volts Operating Temperature -55 to 100C RMS Forward Current 300 milliamps Lead Soldering Time (at 260C) 10 seconds Forward Current (Peak) 10 amperes Surge Isolation Voltage (Input to Output). (100usec 1% duty cycle) H11C4 2500V (peak) 1770VRMs) Surge Current (10m sec) 5 amperes H11C5 2100V (peak) 1480V (pms) Reverse Gate Voltage 6 volts H11C6 1500V(peak) 1060V (ams) Power Dissipation (25C Ambient) ** 400 milliwatts Steady-State Isolation Voltage (Input to Output). Power Dissipation (25C Case) ***1 000 milliwatts H11C4 1500V peak) 1060V (Rms) **Derate 5.3mW/C above 25C ambient. H11C5 1260V (peak) 890ViRMs) ***Derate 13.3mW/C above 25C case. H11C6 950V (peak) (RMS) individual electrical characteristics (25C) INFRARED EMITTING DIODE | typ. | Max. UNITS PHOTO SCR MIN. |TYP. |MAX.| UNITS Forward Voltage Ve 1.2 1.5 | volts Peak Off-State Voltage Vpy |400] | [volts (Ip = 10mA) (Rex = 10KQ, 100C) Peak Reverse Voltage Vem 400 | | |volts (Rgx = 10KQ, 100C) Reverse Current Ip 10 | microamps On-State Voltage Vim [1d | 13 jolts (VR = 3V) (Ilr = 3 amp) ; Off-State Current Ipm | |150 |microamps (Vp = 400V, Ta = 100C) Reverse Current IRm - 150 jmicroamps (Vem = 400V, Ta = 100C) Capacitance Cy 50 picofarads Capacitance (Anode-Gate) |20 | |picofarads (V = O,f = 1MHz) V=O0V,f= 1MHz (Gate-Cathode) 350] |picofarads coupled electrical characteristics (25C) MIN. TYP. MAX. UNITS Input Current to Trigger (Vax = 50V, Rex = 1OK&) H11C4, CS 20 milliamps H11C6 30 milliamps Input Current to Trigger (Vax = 100 V, Rex = 27KQ) H11C4, CS _ _ 11 milliamps H11C6 _ 14 milliamps Isolation Resistance (Input to Output Voltage = SO0Vpc) 100 - gigaohms Input to Output Capacitance (Input to Output Voltage = O,f = 1MHz) _ _ 2 picofarads Coupled dv/dt, Input to Output (See Figure 13) 1303 500 _ - volts/ysec H11C4, H11C5, H11C6 | TYPICAL CHARACTERISTICS NORMALIZED TO Vaq 2504 Req *10K Ta =25%C 6 Tp7 NORMALIZED iNPUT CURRENT TO TRIGGER ( 5 10 50 100 200 400 Va -ANODE TO CATHODE VOLTAGE -VOLTS. FIGURE 1. INPUT CURRENT TO TRIGGER VS. ANODE-CATHODE VOLTAGE NORMALIZED TO Vaw2 50 Rg 110K Ta 25C PERCENTILE Tp _-NORMALIZED INPUT CURRENT TO TRIGGER -20 20 Tg AMBIENT TEMPERATURE -*C FIGURE 3. INPUT CURRENT TO TRIGGER DISTRIBUTION VS. TEMPERATURE -40 Vak * 50 VOLTS ton ttg tte ty al psec ton - TURN ON TIME MICROSECONDS lo 20 30 40 50 60 70 80 90 Oo dp ~INPUT CURRENT - MILLIAMPERES 1304 FIGURE 5, TURN-ON TIME VS. INPUT CURRENT Tp-7- NORMALIZED INPUT CURRENT TO TRIGGER . a -60 tT NORMALIZED TO Vak #50V Rok 710K Ta *25C -40 -20 20 40 60 80 (00 120 Ta -AMBIENT TEMPERATURE -C FIGURE 2. iNPUT CURRENT TO TRIGGER VS. TEMPERATURE Ip7- NORMALIZED INPUT CURRENT TO TRIGGER 4 ! 2 4 6610 20 40 60 100 200 400 1000 PULSE WIOTH- MICRO SECONDS. FIGURE 4. INPUT CURRENT TO TRIGGER VS. PULSE WIDTH I,-FORWARD CURRENT -MILLIAMPERES Os to 20 30 Vg FORWARD VOLTAGE - VOLTS FIGURE 6. INPUT CHARACTERISTICS Ip VS. Ve TYPICAL CHARACTERISTICS OF OUTPUT (SCR) Ty7 HOLDING CURRENT - MICROAMPERES 3 | Vax 50V | t of _| 0 O 60 80 100 Ta, - AMBIENT TEMPERATURE -C 10 -40 -20 FIGURE 7. HOLDING CURRENT VS. TEMPERATURE 10,000 5000 NORMALIZED TO Yak = 50 Ty 225C a 5 Ip~ NORMALIZED FORWARD CURRENT, OFF STATE 25 50 75 100 Ta~ AMBIENT TEMPERATURE -C FIGURE 9. OFF-STATE FORWARD CURRENT VS. TEMPERATURE Volts ar sec 3 3 3 dV/qy-CRITICAL RATE OF RISE APPLIED FORWARD VOLTAGE - 56K Ty AMBIENT TEMPERATURE -C 1305 FIGURE 11. dv/dt VS. TEMPERATURE | H11C4, H11C5, H11C6 | NOTE: (H}LEAD TEMPERATURE MEASURED AT THE WIDEST PORTION OF THE SCR ANODE LEAD (2) AMBIENT TEMPERATURE MEASURED AT & POINT TRANSIENT THERMAL JMPEDANCE-*C PER WATT | 0.001 0002 0. JUNCTION 1/2" FROM THE DEVICE TO AMBIENT 002 004 O1 02 04 I 2 a io 20 40 wo TIME-SECONDS 004 001 FIGURE 8. MAXIMUM TRANSIENT THERMAL MAXIMUM ALLOWABLE TEMPERATURE - C 17 ~ON-STATE CURRENT AMPERES IMPEDANCE LEAD TEMP DC CURRENT AMBIENT TEMP HALF-SINE \ \ AMB TEMP LEAD TEMP Oc CURRENT 72 SINE WAVE AVERAGE 0.4 0.6 ON STATE CURRENT - AMPERES FIGURE 10. ON-STATE CURRENT VS. MAXIMUM ALLOWABLE TEMPERATURE 0.8 0 OB JUNCTION TEMPERATURE = 25C O4 JUNCTION TEMPERATURE = 100C 02 oot INCREASES TO FORWARD T. to 20 3.0 40 V_~ON-STATE VOLTAGE - VOLTS FIGURE 12. ON-STATE CHARACTERISTICS | H11C4, H11C5, H11C6 | TYPICAL APPLICATIONS 10A, T?L COMPATIBLE, SOLID STATE RELAY Use of the H11C4 for high sensitivity, 2500V iso- lation capability, provides this highly reliable solid state relay design. This design is compatible with 74, 74S and 74H series T?L logic systems inputs and 220V AC loads up to 10A. LL x O.laF CONTACT | Beso fern 220V AC INS060 (4) 25W LOGIC INDICATOR LAMP DRIVER The high surge capability and non-reactive input characteristics of the H11C allow it to directly couple, without buffers, T? L INDICATOR LAMP and DTL logic to indicator and alarm devices, without danger 220VAC of introducing noise and logic glitches. o 400V SYMMETRICAL TRANSISTOR COUPLER HIIC4 Use of the high voltage PNP portion of the H11C providesa 400V transistor ss $s $5 fC | capable of conducting positive and negative signals with current transfer INPUT = jOUTPUT ratios of over 1%. This function is useful in remote instrumentation, high voltage power supplies and test equipment. Care should be taken not to ex- Lj ceed the H11C 400 mW power dissipation rating when used at high voltages. FIGURE 13 COUPLED dv/dt TEST CIRCUIT Pde 4 tp L. dV/dt Vp = 800 Volts typ =.010 Seconds f = 25 Hertz + lOOVAC Ta =25C + a! | Hl Vp 1 -olt lo EXPONENTIAL ]_ _ osciLLoscoPE RAMP GEN. 1306