S-808xxC Series
www.sii-ic.com
SUPER-SMALL PACKAGE HIGH-PRECISION
VOLTAGE DETECTOR
© Seiko Instruments Inc., 2001-2011 Rev.6.1_00
Seiko Instruments Inc. 1
The S-808xxC series is a series of high-precision voltage detectors developed using CMOS process. The
detection voltage is fixed internally with an accuracy of ±2.0%. Two output forms, Nch open-drain and CMOS
output, are available. Super-low current consumption and miniature package lineup can meet demand from the
portable device applications.
Features
• Super-low current consumption 1.3 μA typ. (detection voltage≤1.4 V, at VDD = 1.5 V)
0.8 μA typ. (detection voltage≥1.5 V, at VDD = 3.5 V)
• High-precision detection voltage ±2.0%
• Operating voltage range 0.65 V to 5.0 V (detection voltage≤1.4 V)
0.95 V to 10.0 V (detection voltage≥1.5 V)
• Hysteresis characteristics 5% typ.
• Detection voltage 0.8 V to 6.0 V (0.1 V step)
• Output form Nch open-drain output (Active Low)
CMOS output (Active Low)
• Lead-free, Sn 100%, halogen-free*1
*1. Refer to “ Product Name Structure” for details.
Applications
• Battery checkers
• Power failure detectors
• Power monitor for portable equipments such as pagers, calculators, electronic notebooks and remote
controllers.
• Constant voltage power monitor for cameras, video equipments and communication devices.
• Power monitor for microcomputers and reset for CPUs.
Packages
• SC-82AB
• SOT-23-5
• SOT-89-3
• SNT-4A
• TO-92
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
2 Seiko Instruments Inc.
Block Diagrams
1. Nch Open-drain Output Products
VSS
*1
*1
+
− OUT
VDD
VREF
*1. Parasitic diode Figure 1
2. CMOS Output Products
*1
−
+ OUT
VSS
VDD
*1
*1
VREF
*1. Parasitic diode Figure 2
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 3
Product Name Structure
The detection voltage, output form and packages for S-808xxC Series can be selected at the user's request.
Refer to the “1. Product Name” for the construction of the product name, “2. Package” regarding the package
drawings and “3. Product Name List” for the full product names.
1. Product Name
1-1. SC-82AB, SOT-23-5, SOT-89-3, SNT-4A packages
S - 808xx C x xx - xxx xx x
IC direction in tape specifications*1
T2: SC-82AB, SOT-23-5, SOT-89-3
TF: SNT-4A
Product code*2
Package code
NB: SC-82AB
MC: SOT-23-5
UA: SOT-89-3
PF: SNT-4A
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
08 to 60
(e.g. When the detection voltage is 0.8 V,
it is expressed as 08.)
Environmental code
U: Lead-free (Sn 100%), halogen-free
G: Lead-free (for details, please contact our sales office)
*1. Refer to the tape specifications at the end of this book.
*2. Refer to the Table 1 and 3 in the “3. Product Name List”
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
4 Seiko Instruments Inc.
1-2. TO-92 package
S - 808xx C x Y - x 2 - U
Packing fo rm
B: Bulk
Z: Tape and ammo
Package code
Y: TO-92
Output form
N: Nch open-drain output (Active Low)
L: CMOS output (Active Low)
Detection voltage value
15 to 60
(e.g. When the detection voltage is 1.5 V,
it is expressed as 15.)
Environmental code
U: Lead-free
(
Sn 100%
)
,halo
g
en-free
2. Packages
Drawing code
Package name Package Tape Reel Zigzag Land
SC-82AB
NP004-A-P-SD NP004-A-C-SD
NP004-A-C-S1 NP004-A-R-SD
⎯
⎯
SOT-23-5
MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD
⎯
⎯
SOT-89-3
UP003-A-P-SD UP003-A-C-SD UP003-A-R-SD
⎯
⎯
SNT-4A
PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD
⎯
PF004-A-L-SD
TO-92 (Bulk)
YS003-D-P-SD
⎯
⎯
⎯
⎯
TO-92 (Tape and ammo)
YZ003-E-P-SD YZ003-E-C-SD
⎯
YZ003-E-Z-SD
⎯
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 5
3. Product Name List
3-1. Nch Open-drain Output Products
Table 1 (1/2)
Detection
voltage range Hysteresis width
(Typ.) SC-82AB SOT-23-5 SOT-89-3
0.8 V
±
2.0 % 0.034 V S-80808CNNB-B9MT2x
⎯
⎯
0.9 V
±
2.0 % 0.044 V S-80809CNNB-B9NT2x
⎯
⎯
1.0 V
±
2.0 % 0.054 V S-80810CNNB-B9OT2x
⎯
⎯
1.1 V
±
2.0 % 0.064 V S-80811CNNB-B9PT2x
⎯
⎯
1.2 V
±
2.0 % 0.073 V S-80812CNNB-B9QT2x
⎯
⎯
1.3 V
±
2.0 % 0.083 V S-80813CNNB-B9RT2x
⎯
⎯
1.4 V
±
2.0 % 0.093 V S-80814CNNB-B9ST2x
⎯
⎯
1.5 V
±
2.0 % 0.075 V S-80815CNNB-B8AT2x S-80815CNMC-B8AT2x S-80815CNUA-B8AT2x
1.6 V
±
2.0 % 0.080 V S-80816CNNB-B8BT2x S-80816CNMC-B8BT2x S-80816CNUA-B8BT2x
1.7 V
±
2.0 % 0.085 V S-80817CNNB-B8CT2x S-80817CNMC-B8CT2x S-80817CNUA-B8CT2x
1.8 V
±
2.0 % 0.090 V S-80818CNNB-B8DT2x S-80818CNMC-B8DT2x S-80818CNUA-B8DT2x
1.9 V
±
2.0 % 0.095 V S-80819CNNB-B8ET2x S-80819CNMC-B8ET2x S-80819CNUA-B8ET2x
2.0 V
±
2.0 % 0.100 V S-80820CNNB-B8FT2x S-80820CNMC-B8FT2x S-80820CNUA-B8FT2x
2.1 V
±
2.0 % 0.105 V S-80821CNNB-B8GT2x S-80821CNMC-B8GT2x S-80821CNUA-B8GT2x
2.2 V
±
2.0 % 0.110 V S-80822CNNB-B8HT2x S-80822CNMC-B8HT2x S-80822CNUA-B8HT2x
2.3 V
±
2.0 % 0.115 V S-80823CNNB-B8IT2x S-80823CNMC-B8IT2x S-80823CNUA-B8IT2x
2.4 V
±
2.0 % 0.120 V S-80824CNNB-B8JT2x S-80824CNMC-B8JT2x S-80824CNUA-B8JT2x
2.4 V typ. 4.4
±
0.1 V
*1
⎯
⎯
S-80824KNUA-D2BT2x
*2
2.5 V
±
2.0 % 0.125 V S-80825CNNB-B8KT2x S-80825CNMC-B8KT2x S-80825CNUA-B8KT2x
2.6 V
±
2.0 % 0.130 V S-80826CNNB-B8LT2x S-80826CNMC-B8LT2x S-80826CNUA-B8LT2x
2.7 V
±
2.0 % 0.135 V S-80827CNNB-B8MT2x S-80827CNMC-B8MT2x S-80827CNUA-B8MT2x
2.8 V
±
2.0 % 0.140 V S-80828CNNB-B8NT2x S-80828CNMC-B8NT2x S-80828CNUA-B8NT2x
2.9 V
±
2.0 % 0.145 V S-80829CNNB-B8OT2x S-80829CNMC-B8OT2x S-80829CNUA-B8OT2x
3.0 V
±
2.0 % 0.150 V S-80830CNNB-B8PT2x S-80830CNMC-B8PT2x S-80830CNUA-B8PT2x
3.1 V
±
2.0 % 0.155 V S-80831CNNB-B8QT2x S-80831CNMC-B8QT2x S-80831CNUA-B8QT2x
3.2 V
±
2.0 % 0.160 V S-80832CNNB-B8RT2x S-80832CNMC-B8RT2x S-80832CNUA-B8RT2x
3.3 V
±
2.0 % 0.165 V S-80833CNNB-B8ST2x S-80833CNMC-B8ST2x S-80833CNUA-B8ST2x
3.4 V
±
2.0 % 0.170 V S-80834CNNB-B8TT2x S-80834CNMC-B8TT2x S-80834CNUA-B8TT2x
3.5 V
±
2.0 % 0.175 V S-80835CNNB-B8UT2x S-80835CNMC-B8UT2x S-80835CNUA-B8UT2x
3.6 V
±
2.0 % 0.180 V S-80836CNNB-B8VT2x S-80836CNMC-B8VT2x S-80836CNUA-B8VT2x
3.7 V
±
2.0 % 0.185 V S-80837CNNB-B8WT2x S-80837CNMC-B8WT2x S-80837CNUA-B8WT2x
3.8 V
±
2.0 % 0.190 V S-80838CNNB-B8XT2x S-80838CNMC-B8XT2x S-80838CNUA-B8XT2x
3.9 V
±
2.0 % 0.195 V S-80839CNNB-B8YT2x S-80839CNMC-B8YT2x S-80839CNUA-B8YT2x
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
6 Seiko Instruments Inc.
Table 1 (2/2)
Detection
voltage range Hysteresis width
(Typ.) SC-82AB SOT-23-5 SOT-89-3
4.0 V
±
2.0 % 0.200 V S-80840CNNB-B8ZT2x S-80840CNMC-B8ZT2x S-80840CNUA-B8ZT2x
4.1 V
±
2.0 % 0.205 V S-80841CNNB-B82T2x S-80841CNMC-B82T2x S-80841CNUA-B82T2x
4.2 V
±
2.0 % 0.210 V S-80842CNNB-B83T2x S-80842CNMC-B83T2x S-80842CNUA-B83T2x
4.3 V
±
2.0 % 0.215 V S-80843CNNB-B84T2x S-80843CNMC-B84T2x S-80843CNUA-B84T2x
4.4 V
±
2.0 % 0.220 V S-80844CNNB-B85T2x S-80844CNMC-B85T2x S-80844CNUA-B85T2x
4.5 V
±
2.0 % 0.225 V S-80845CNNB-B86T2x S-80845CNMC-B86T2x S-80845CNUA-B86T2x
4.6 V
±
2.0 % 0.230 V S-80846CNNB-B87T2x S-80846CNMC-B87T2x S-80846CNUA-B87T2x
4.6 V
±
0.10 V 0.10 V max.
⎯
⎯
S-80846KNUA-D2CT2x
*
3
4.7 V
±
2.0 % 0.235 V S-80847CNNB-B88T2x S-80847CNMC-B88T2x S-80847CNUA-B88T2x
4.8 V
±
2.0 % 0.240 V S-80848CNNB-B89T2x S-80848CNMC-B89T2x S-80848CNUA-B89T2x
4.9 V
±
2.0 % 0.245 V S-80849CNNB-B9AT2x S-80849CNMC-B9AT2x S-80849CNUA-B9AT2x
5.0 V
±
2.0 % 0.250 V S-80850CNNB-B9BT2x S-80850CNMC-B9BT2x S-80850CNUA-B9BT2x
5.1 V
±
2.0 % 0.255 V S-80851CNNB-B9CT2x S-80851CNMC-B9CT2x S-80851CNUA-B9CT2x
5.2 V
±
2.0 % 0.260 V S-80852CNNB-B9DT2x S-80852CNMC-B9DT2x S-80852CNUA-B9DT2x
5.3 V
±
2.0 % 0.265 V S-80853CNNB-B9ET2x S-80853CNMC-B9ET2x S-80853CNUA-B9ET2x
5.4 V
±
2.0 % 0.270 V S-80854CNNB-B9FT2x S-80854CNMC-B9FT2x S-80854CNUA-B9FT2x
5.5 V
±
2.0 % 0.275 V S-80855CNNB-B9GT2x S-80855CNMC-B9GT2x S-80855CNUA-B9GT2x
5.6 V
±
2.0 % 0.280 V S-80856CNNB-B9HT2x S-80856CNMC-B9HT2x S-80856CNUA-B9HT2x
5.7 V
±
2.0 % 0.285 V S-80857CNNB-B9IT2x S-80857CNMC-B9IT2x S-80857CNUA-B9IT2x
5.8 V
±
2.0 % 0.290 V S-80858CNNB-B9JT2x S-80858CNMC-B9JT2x S-80858CNUA-B9JT2x
5.9 V
±
2.0 % 0.295 V S-80859CNNB-B9KT2x S-80859CNMC-B9KT2x S-80859CNUA-B9KT2x
6.0 V
±
2.0 % 0.300 V S-80860CNNB-B9LT2x S-80860CNMC-B9LT2x S-80860CNUA-B9LT2x
*1. Describes the release voltage.
*2. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics.
*3. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 7
Table 2 (1/2)
Detection
voltage range Hysteresis width
(Typ.) SNT-4A TO-92
*1
0.8 V
±
2.0 % 0.034 V S-80808CNPF-B9MTFx
⎯
0.9 V
±
2.0 % 0.044 V S-80809CNPF-B9NTFx
⎯
1.0 V
±
2.0 % 0.054 V S-80810CNPF-B9OTFx
⎯
1.1 V
±
2.0 % 0.064 V S-80811CNPF-B9PTFx
⎯
1.2 V
±
2.0 % 0.073 V S-80812CNPF-B9QTFx
⎯
1.3 V
±
2.0 % 0.083 V S-80813CNPF-B9RTFx
⎯
1.4 V
±
2.0 % 0.093 V S-80814CNPF-B9STFx
⎯
1.5 V
±
2.0 % 0.075 V S-80815CNPF-B8ATFx S-80815CNY-n2-U
1.6 V
±
2.0 % 0.080 V S-80816CNPF-B8BTFx S-80816CNY-n2-U
1.7 V
±
2.0 % 0.085 V S-80817CNPF-B8CTFx S-80817CNY-n2-U
1.8 V
±
2.0 % 0.090 V S-80818CNPF-B8DTFx S-80818CNY-n2-U
1.9 V
±
2.0 % 0.095 V S-80819CNPF-B8ETFx S-80819CNY-n2-U
2.0 V
±
2.0 % 0.100 V S-80820CNPF-B8FTFx S-80820CNY-n2-U
2.1 V
±
2.0 % 0.105 V S-80821CNPF-B8GTFx S-80821CNY-n2-U
2.2 V
±
2.0 % 0.110 V S-80822CNPF-B8HTFx S-80822CNY-n2-U
2.3 V
±
2.0 % 0.115 V S-80823CNPF-B8ITFx S-80823CNY-n2-U
2.4 V
±
2.0 % 0.120 V S-80824CNPF-B8JTFx S-80824CNY-n2-U
2.4 V typ. 4.4
±
0.1 V
*2
⎯
S-80824KNY-n2-U
*3
2.5 V
±
2.0 % 0.125 V S-80825CNPF-B8KTFx S-80825CNY-n2-U
2.6 V
±
2.0 % 0.130 V S-80826CNPF-B8LTFx S-80826CNY-n2-U
2.7 V
±
2.0 % 0.135 V S-80827CNPF-B8MTFx S-80827CNY-n2-U
2.8 V
±
2.0 % 0.140 V S-80828CNPF-B8NTFx S-80828CNY-n2-U
2.9 V
±
2.0 % 0.145 V S-80829CNPF-B8OTFx S-80829CNY-n2-U
3.0 V
±
2.0 % 0.150 V S-80830CNPF-B8PTFx S-80830CNY-n2-U
3.1 V
±
2.0 % 0.155 V S-80831CNPF-B8QTFx S-80831CNY-n2-U
3.2 V
±
2.0 % 0.160 V S-80832CNPF-B8RTFx S-80832CNY-n2-U
3.3 V
±
2.0 % 0.165 V S-80833CNPF-B8STFx S-80833CNY-n2-U
3.4 V
±
2.0 % 0.170 V S-80834CNPF-B8TTFx S-80834CNY-n2-U
3.5 V
±
2.0 % 0.175 V S-80835CNPF-B8UTFx S-80835CNY-n2-U
3.6 V
±
2.0 % 0.180 V S-80836CNPF-B8VTFx S-80836CNY-n2-U
3.7 V
±
2.0 % 0.185 V S-80837CNPF-B8WTFx S-80837CNY-n2-U
3.8 V
±
2.0 % 0.190 V S-80838CNPF-B8XTFx S-80838CNY-n2-U
3.9 V
±
2.0 % 0.195 V S-80839CNPF-B8YTFx S-80839CNY-n2-U
4.0 V
±
2.0 % 0.200 V S-80840CNPF-B8ZTFx S-80840CNY-n2-U
4.1 V
±
2.0 % 0.205 V S-80841CNPF-B82TFx S-80841CNY-n2-U
4.2 V
±
2.0 % 0.210 V S-80842CNPF-B83TFx S-80842CNY-n2-U
4.3 V
±
2.0 % 0.215 V S-80843CNPF-B84TFx S-80843CNY-n2-U
4.4 V
±
2.0 % 0.220 V S-80844CNPF-B85TFx S-80844CNY-n2-U
4.5 V
±
2.0 % 0.225 V S-80845CNPF-B86TFx S-80845CNY-n2-U
4.6 V
±
2.0 % 0.230 V S-80846CNPF-B87TFx S-80846CNY-n2-U
4.6 V
±
0.10 V 0.10 V max.
⎯
S-80846KNY-n2-U
*4
4.7 V
±
2.0 % 0.235 V S-80847CNPF-B88TFx S-80847CNY-n2-U
4.8 V
±
2.0 % 0.240 V S-80848CNPF-B89TFx S-80848CNY-n2-U
4.9 V
±
2.0 % 0.245 V S-80849CNPF-B9ATFx S-80849CNY-n2-U
5.0 V
±
2.0 % 0.250 V S-80850CNPF-B9BTFx S-80850CNY-n2-U
5.1 V
±
2.0 % 0.255 V S-80851CNPF-B9CTFx S-80851CNY-n2-U
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
8 Seiko Instruments Inc.
Table 2 (2/2)
Detection
voltage range Hysteresis width
(Typ.) SNT-4A TO-92
*1
5.2 V
±
2.0 % 0.260 V S-80852CNPF-B9DTFx S-80852CNY-n2-U
5.3 V
±
2.0 % 0.265 V S-80853CNPF-B9ETFx S-80853CNY-n2-U
5.4 V
±
2.0 % 0.270 V S-80854CNPF-B9FTFx S-80854CNY-n2-U
5.5 V
±
2.0 % 0.275 V S-80855CNPF-B9GTFx S-80855CNY-n2-U
5.6 V
±
2.0 % 0.280 V S-80856CNPF-B9HTFx S-80856CNY-n2-U
5.7 V
±
2.0 % 0.285 V S-80857CNPF-B9ITFx S-80857CNY-n2-U
5.8 V
±
2.0 % 0.290 V S-80858CNPF-B9JTFx S-80858CNY-n2-U
5.9 V
±
2.0 % 0.295 V S-80859CNPF-B9KTFx S-80859CNY-n2-U
6.0 V
±
2.0 % 0.300 V S-80860CNPF-B9LTFx S-80860CNY-n2-U
*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 18 in “ Electricala Characteristics for Customized Products” for electrical characteristics.
*4. Refer to the Table 20 in “ Electricala Characteristics for Customized Products” for electrical characteristics.
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 9
3-2. CMOS Output Products
Table 3 (1/2)
Detection
voltage range Hysteresis width
(Typ.) SC-82AB SOT-23-5 SOT-89-3
0.8 V
±
2.0 % 0.034 V S-80808CLNB-B7MT2x
⎯
⎯
0.9 V
±
2.0 % 0.044 V S-80809CLNB-B7NT2x
⎯
⎯
1.0 V
±
2.0 % 0.054 V S-80810CLNB-B7OT2x
⎯
⎯
1.1 V
±
2.0 % 0.064 V S-80811CLNB-B7PT2x
⎯
⎯
1.2 V
±
2.0 % 0.073 V S-80812CLNB-B7QT2x
⎯
⎯
1.3 V
±
2.0 % 0.083 V S-80813CLNB-B7RT2x
⎯
⎯
1.4 V
±
2.0 % 0.093 V S-80814CLNB-B7ST2x
⎯
⎯
1.5 V
±
2.0 % 0.075 V S-80815CLNB-B6AT2x S-80815CLMC-B6AT2x S-80815CLUA-B6AT2x
1.6 V
±
2.0 % 0.080 V S-80816CLNB-B6BT2x S-80816CLMC-B6BT2x S-80816CLUA-B6BT2x
1.7 V
±
2.0 % 0.085 V S-80817CLNB-B6CT2x S-80817CLMC-B6CT2x S-80817CLUA-B6CT2x
1.8 V
±
2.0 % 0.090 V S-80818CLNB-B6DT2x S-80818CLMC-B6DT2x S-80818CLUA-B6DT2x
1.9 V
±
2.0 % 0.095 V S-80819CLNB-B6ET2x S-80819CLMC-B6ET2x S-80819CLUA-B6ET2x
2.0 V
±
2.0 % 0.100 V S-80820CLNB-B6FT2x S-80820CLMC-B6FT2x S-80820CLUA-B6FT2x
2.1 V
±
2.0 % 0.105 V S-80821CLNB-B6GT2x S-80821CLMC-B6GT2x S-80821CLUA-B6GT2x
2.2 V
±
2.0 % 0.110 V S-80822CLNB-B6HT2x S-80822CLMC-B6HT2x S-80822CLUA-B6HT2x
2.3 V
±
2.0 % 0.115 V S-80823CLNB-B6IT2x S-80823CLMC-B6IT2x S-80823CLUA-B6IT2x
2.4 V
±
2.0 % 0.120 V S-80824CLNB-B6JT2x S-80824CLMC-B6JT2x S-80824CLUA-B6JT2x
2.5 V
±
2.0 % 0.125 V S-80825CLNB-B6KT2x S-80825CLMC-B6KT2x S-80825CLUA-B6KT2x
2.6 V
±
2.0 % 0.130 V S-80826CLNB-B6LT2x S-80826CLMC-B6LT2x S-80826CLUA-B6LT2x
2.7 V
±
2.0 % 0.135 V S-80827CLNB-B6MT2x S-80827CLMC-B6MT2x S-80827CLUA-B6MT2x
2.8 V
±
2.0 % 0.140 V S-80828CLNB-B6NT2x S-80828CLMC-B6NT2x S-80828CLUA-B6NT2x
2.9 V
±
2.0 % 0.145 V S-80829CLNB-B6OT2x S-80829CLMC-B6OT2x S-80829CLUA-B6OT2x
3.0 V
±
2.0 % 0.150 V S-80830CLNB-B6PT2x S-80830CLMC-B6PT2x S-80830CLUA-B6PT2x
3.1 V
±
2.0 % 0.155 V S-80831CLNB-B6QT2x S-80831CLMC-B6QT2x S-80831CLUA-B6QT2x
3.2 V
±
2.0 % 0.160 V S-80832CLNB-B6RT2x S-80832CLMC-B6RT2x S-80832CLUA-B6RT2x
3.3 V
±
2.0 % 0.165 V S-80833CLNB-B6ST2x S-80833CLMC-B6ST2x S-80833CLUA-B6ST2x
3.4 V
±
2.0 % 0.170 V S-80834CLNB-B6TT2x S-80834CLMC-B6TT2x S-80834CLUA-B6TT2x
3.5 V
±
2.0 % 0.175 V S-80835CLNB-B6UT2x S-80835CLMC-B6UT2x S-80835CLUA-B6UT2x
3.6 V
±
2.0 % 0.180 V S-80836CLNB-B6VT2x S-80836CLMC-B6VT2x S-80836CLUA-B6VT2x
3.7 V
±
2.0 % 0.185 V S-80837CLNB-B6WT2x S-80837CLMC-B6WT2x S-80837CLUA-B6WT2x
3.8 V
±
2.0 % 0.190 V S-80838CLNB-B6XT2x S-80838CLMC-B6XT2x S-80838CLUA-B6XT2x
3.9 V
±
2.0 % 0.195 V S-80839CLNB-B6YT2x S-80839CLMC-B6YT2x S-80839CLUA-B6YT2x
4.0 V
±
2.0 % 0.200 V S-80840CLNB-B6ZT2x S-80840CLMC-B6ZT2x S-80840CLUA-B6ZT2x
4.1 V
±
2.0 % 0.205 V S-80841CLNB-B62T2x S-80841CLMC-B62T2x S-80841CLUA-B62T2x
4.2 V
±
2.0 % 0.210 V S-80842CLNB-B63T2x S-80842CLMC-B63T2x S-80842CLUA-B63T2x
4.3 V
±
2.0 % 0.215 V S-80843CLNB-B64T2x S-80843CLMC-B64T2x S-80843CLUA-B64T2x
4.4 V
±
2.0 % 0.220 V S-80844CLNB-B65T2x S-80844CLMC-B65T2x S-80844CLUA-B65T2x
4.45 V typ. 4.70 V max.
*1
⎯
⎯
S-80844KLUA-D2AT2x
*
2
4.5 V
±
2.0 % 0.225 V S-80845CLNB-B66T2x S-80845CLMC-B66T2x S-80845CLUA-B66T2x
4.6 V
±
2.0 % 0.230 V S-80846CLNB-B67T2x S-80846CLMC-B67T2x S-80846CLUA-B67T2x
4.7 V
±
2.0 % 0.235 V S-80847CLNB-B68T2x S-80847CLMC-B68T2x S-80847CLUA-B68T2x
4.8 V
±
2.0 % 0.240 V S-80848CLNB-B69T2x S-80848CLMC-B69T2x S-80848CLUA-B69T2x
4.9 V
±
2.0 % 0.245 V S-80849CLNB-B7AT2x S-80849CLMC-B7AT2x S-80849CLUA-B7AT2x
5.0 V
±
2.0 % 0.250 V S-80850CLNB-B7BT2x S-80850CLMC-B7BT2x S-80850CLUA-B7BT2x
5.1 V
±
2.0 % 0.255 V S-80851CLNB-B7CT2x S-80851CLMC-B7CT2x S-80851CLUA-B7CT2x
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
10 Seiko Instruments Inc.
Table 3 (2/2)
Detection
voltage range Hysteresis width
(Typ.) SC-82AB SOT-23-5 SOT-89-3
5.2 V
±
2.0 % 0.260 V S-80852CLNB-B7DT2x S-80852CLMC-B7DT2x S-80852CLUA-B7DT2x
5.3 V
±
2.0 % 0.265 V S-80853CLNB-B7ET2x S-80853CLMC-B7ET2x S-80853CLUA-B7ET2x
5.4 V
±
2.0 % 0.270 V S-80854CLNB-B7FT2x S-80854CLMC-B7FT2x S-80854CLUA-B7FT2x
5.5 V
±
2.0 % 0.275 V S-80855CLNB-B7GT2x S-80855CLMC-B7GT2x S-80855CLUA-B7GT2x
5.6 V
±
2.0 % 0.280 V S-80856CLNB-B7HT2x S-80856CLMC-B7HT2x S-80856CLUA-B7HT2x
5.7 V
±
2.0 % 0.285 V S-80857CLNB-B7IT2x S-80857CLMC-B7IT2x S-80857CLUA-B7IT2x
5.8 V
±
2.0 % 0.290 V S-80858CLNB-B7JT2x S-80858CLMC-B7JT2x S-80858CLUA-B7JT2x
5.9 V
±
2.0 % 0.295 V S-80859CLNB-B7KT2x S-80859CLMC-B7KT2x S-80859CLUA-B7KT2x
6.0 V
±
2.0 % 0.300 V S-80860CLNB-B7LT2x S-80860CLMC-B7LT2x S-80860CLUA-B7LT2x
*1. Describes the release voltage.
*2. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics.
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
Table 4 (1/2)
Detection
voltage range Hysteresis width
(Typ.) SNT-4A TO-92
*1
0.8 V
±
2.0 % 0.034 V S-80808CLPF-B7MTFx
⎯
0.9 V
±
2.0 % 0.044 V S-80809CLPF-B7NTFx
⎯
1.0 V
±
2.0 % 0.054 V S-80810CLPF-B7OTFx
⎯
1.1 V
±
2.0 % 0.064 V S-80811CLPF-B7PTFx
⎯
1.2 V
±
2.0 % 0.073 V S-80812CLPF-B7QTFx
⎯
1.3 V
±
2.0 % 0.083 V S-80813CLPF-B7RTFx
⎯
1.4 V
±
2.0 % 0.093 V S-80814CLPF-B7STFx
⎯
1.5 V
±
2.0 % 0.075 V S-80815CLPF-B6ATFx S-80815CLY-n2-U
1.6 V
±
2.0 % 0.080 V S-80816CLPF-B6BTFx S-80816CLY-n2-U
1.7 V
±
2.0 % 0.085 V S-80817CLPF-B6CTFx S-80817CLY-n2-U
1.8 V
±
2.0 % 0.090 V S-80818CLPF-B6DTFx S-80818CLY-n2-U
1.9 V
±
2.0 % 0.095 V S-80819CLPF-B6ETFx S-80819CLY-n2-U
2.0 V
±
2.0 % 0.100 V S-80820CLPF-B6FTFx S-80820CLY-n2-U
2.1 V
±
2.0 % 0.105 V S-80821CLPF-B6GTFx S-80821CLY-n2-U
2.2 V
±
2.0 % 0.110 V S-80822CLPF-B6HTFx S-80822CLY-n2-U
2.3 V
±
2.0 % 0.115 V S-80823CLPF-B6ITFx S-80823CLY-n2-U
2.4 V
±
2.0 % 0.120 V S-80824CLPF-B6JTFx S-80824CLY-n2-U
2.5 V
±
2.0 % 0.125 V S-80825CLPF-B6KTFx S-80825CLY-n2-U
2.6 V
±
2.0 % 0.130 V S-80826CLPF-B6LTFx S-80826CLY-n2-U
2.7 V
±
2.0 % 0.135 V S-80827CLPF-B6MTFx S-80827CLY-n2-U
2.8 V
±
2.0 % 0.140 V S-80828CLPF-B6NTFx S-80828CLY-n2-U
2.9 V
±
2.0 % 0.145 V S-80829CLPF-B6OTFx S-80829CLY-n2-U
3.0 V
±
2.0 % 0.150 V S-80830CLPF-B6PTFx S-80830CLY-n2-U
3.1 V
±
2.0 % 0.155 V S-80831CLPF-B6QTFx S-80831CLY-n2-U
3.2 V
±
2.0 % 0.160 V S-80832CLPF-B6RTFx S-80832CLY-n2-U
3.3 V
±
2.0 % 0.165 V S-80833CLPF-B6STFx S-80833CLY-n2-U
3.4 V
±
2.0 % 0.170 V S-80834CLPF-B6TTFx S-80834CLY-n2-U
3.5 V
±
2.0 % 0.175 V S-80835CLPF-B6UTFx S-80835CLY-n2-U
3.6 V
±
2.0 % 0.180 V S-80836CLPF-B6VTFx S-80836CLY-n2-U
3.7 V
±
2.0 % 0.185 V S-80837CLPF-B6WTFx S-80837CLY-n2-U
3.8 V
±
2.0 % 0.190 V S-80838CLPF-B6XTFx S-80838CLY-n2-U
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 11
Table 4 (2/2)
Detection
voltage range Hysteresis width
(Typ.) SNT-4A TO-92
*1
3.9 V
±
2.0 % 0.195 V S-80839CLPF-B6YTFx S-80839CLY-n2-U
4.0 V
±
2.0 % 0.200 V S-80840CLPF-B6ZTFx S-80840CLY-n2-U
4.1 V
±
2.0 % 0.205 V S-80841CLPF-B62TFx S-80841CLY-n2-U
4.2 V
±
2.0 % 0.210 V S-80842CLPF-B63TFx S-80842CLY-n2-U
4.3 V
±
2.0 % 0.215 V S-80843CLPF-B64TFx S-80843CLY-n2-U
4.4 V
±
2.0 % 0.220 V S-80844CLPF-B65TFx S-80844CLY-n2-U
4.45 V typ. 4.70 V max.
*2
⎯
S-80844KLY-n2-U
*3
4.5 V
±
2.0 % 0.225 V S-80845CLPF-B66TFx S-80845CLY-n2-U
4.6 V
±
2.0 % 0.230 V S-80846CLPF-B67TFx S-80846CLY-n2-U
4.7 V
±
2.0 % 0.235 V S-80847CLPF-B68TFx S-80847CLY-n2-U
4.8 V
±
2.0 % 0.240 V S-80848CLPF-B69TFx S-80848CLY-n2-U
4.9 V
±
2.0 % 0.245 V S-80849CLPF-B7ATFx S-80849CLY-n2-U
5.0 V
±
2.0 % 0.250 V S-80850CLPF-B7BTFx S-80850CLY-n2-U
5.1 V
±
2.0 % 0.255 V S-80851CLPF-B7CTFx S-80851CLY-n2-U
5.2 V
±
2.0 % 0.260 V S-80852CLPF-B7DTFx S-80852CLY-n2-U
5.3 V
±
2.0 % 0.265 V S-80853CLPF-B7ETFx S-80853CLY-n2-U
5.4 V
±
2.0 % 0.270 V S-80854CLPF-B7FTFx S-80854CLY-n2-U
5.5 V
±
2.0 % 0.275 V S-80855CLPF-B7GTFx S-80855CLY-n2-U
5.6 V
±
2.0 % 0.280 V S-80856CLPF-B7HTFx S-80856CLY-n2-U
5.7 V
±
2.0 % 0.285 V S-80857CLPF-B7ITFx S-80857CLY-n2-U
5.8 V
±
2.0 % 0.290 V S-80858CLPF-B7JTFx S-80858CLY-n2-U
5.9 V
±
2.0 % 0.295 V S-80859CLPF-B7KTFx S-80859CLY-n2-U
6.0 V
±
2.0 % 0.300 V S-80860CLPF-B7LTFx S-80860CLY-n2-U
*1. n changes according to the packing form in TO-92. B: Bulk, Z: Tape and ammo
*2. Describes the release voltage.
*3. Refer to the Table 19 in “ Electricala Characteristics for Customized Products” for electrical characteristics.
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
12 Seiko Instruments Inc.
Output Forms
1. Output Forms in S-808xxC Series
Table 5
Nch open-drain output products
(Active Low) CMOS output products
(Active Low)
S-808xxC Series “N” is the last letter of the product name.
e.g. S-80815CN “L” is the last letter of the product name.
e.g. S-80815CL
2. Output Forms and Their Usage
Table 6
Usage Nch open-drain output products
(Active Low) CMOS output products
(Active Low)
Different power supplies Yes No
Active Low reset for CPUs Yes Yes
Active High reset for CPUs No No
Detection voltage change by resistor divider Yes No
•
Example for two power supplies
•
Example for one power supply
V/D
Nch V/D
Nch
V/D
CMOS
CPU CPU CPU
VDD1 V
DD2 V
DD V
DD
OUT OUT OUT
VSS VSS VSS
Figure 3
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 13
Pin Configurations
Table 7
Pin No. Symbol Description
1 OUT Voltage detection output pin
2 VDD Voltage input pin
3 NC*1 No connection
4 VSS GND pin
4 3
1 2
SC-82AB
Top view
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Figure 4
Table 8
Pin No. Symbol Description
1 OUT Voltage detection output pin
2 VDD Voltage input pin
3 VSS GND pin
4 NC*1 No connection
5 NC*1 No connection
SOT-23-5
Top view
5
4
3
2
1
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Figure 5
Table 9
Pin No. Symbol Description
1 OUT Voltage detection output pin
2 VDD Voltage input pin
3 VSS GND pin
SOT-89-3
Top view
3
2
1
Figure 6
Table10
Pin No. Symbol Description
1 OUT Voltage detection output pin
2 VSS GND pin
3 NC*1 No connection
4 VDD Voltage input pin
SNT-4A
Top view
1 4
2 3
*1. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Figure 7
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
14 Seiko Instruments Inc.
Table 11
Pin No. Symbol Description
1 OUT Voltage detection output pin
2 VDD Voltage input pin
3 VSS GND pin
TO-92
Bottom view
1 3 2
Figure 8
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 15
Absolute Maximum Ratings
1. Detection Voltage Typ. 1.4 V or Less Products
Table 12 (Ta = 25 °C unless otherwise specified)
Item Symbol Absolute maximum ratings Unit
Power supply voltage VDD−VSS 7 V
Output voltage Nch open-drain output products VOUT VSS−0.3 to VSS+7 V
CMOS output products VSS−0.3 to VDD+0.3 V
Output current IOUT 50 mA
SC-82AB PD 150 (When not mounted on board) mW
350*1 mW
SNT-4A 140 (When not mounted on board) mW
Power
dissipation
300*1 mW
Operating ambient temperature Topr −40 to +85 °C
Storage temperature Tstg −40 to +125 °C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
050 100
150
400
200
0
Power Dissipation P
D
(mW)
Ambient Temperature Ta (°C)
500
300
100
SNT-4A
SC-82AB
Figure 9 Power Dissipation of Package (When Mounted on Board)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
16 Seiko Instruments Inc.
2. Detection Voltage Typ. 1.5 V or More Products
Table 13 (Ta = 25 °C unless otherwise specified)
Item Symbol Absolute maximum ratings Unit
Power supply voltage VDD−VSS 12 V
Output voltage Nch open-drain output products VOUT VSS−0.3 to VSS+12 V
CMOS output products VSS−0.3 to VDD+0.3 V
Output current IOUT 50 mA
SC-82AB PD 150 (When not mounted on board) mW
350*1 mW
SOT-23-5 250 (When not mounted on board) mW
600*1 mW
SOT-89-3 500 (When not mounted on board) mW
1000*1 mW
SNT-4A 140 (When not mounted on board) mW
300*1 mW
TO-92 400 (When not mounted on board) mW
Power
dissipation
800*1 mW
Operating ambient temperature Topr −40 to +85 °C
Storage temperature Tstg −40 to +125 °C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
050 100
150
800
400
0
Power Dissipation P
D
(mW)
Ambient Temperature Ta (°C)
1000
600
200
1200
SNT-4A
SC-82AB
SOT-23-5
SOT-89-3
TO-92
Figure 10 Power Dissipation of Package (When Mounted on Board)
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 17
Electrical Characteristics
1. Nch Open-drain Output Products
1-1. Detection Voltage Typ.1.4 V or Less Products
Table 14 (Ta = 25 °C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
circuit
Detection voltage*1 −VDET ⎯ −VDET(S)
×0.98 −VDET(S)
−VDET(S)
×1.02 V 1
Release voltage +VDET S-80808 0.802 0.834 0.867 V 1
S-80809 0.910 0.944 0.979 V 1
S-80810 1.017 1.054 1.091 V 1
S-80811 1.125 1.164 1.203 V 1
S-80812 1.232 1.273 1.315 V 1
S-80813 1.340 1.383 1.427 V 1
S-80814 1.448 1.493 1.538 V 1
Hysteresis width VHYS S-80808 0.018 0.034 0.051 V 1
S-80809 0.028 0.044 0.061 V 1
S-80810 0.037 0.054 0.071 V 1
S-80811 0.047 0.064 0.081 V 1
S-80812 0.056 0.073 0.091 V 1
S-80813 0.066 0.083 0.101 V 1
S-80814 0.076 0.093 0.110 V 1
Current consumption ISS VDD = 1.5 V S-80808 to 09 ⎯ 1.3 3.5 μA 2
VDD = 2.0 V S-80810 to 14 ⎯ 1.3 3.5 μA 2
Operating voltage VDD ⎯ 0.65 ⎯ 5.0 V 1
Output current IOUT Output transistor,
Nch, VDS = 0.5 V, VDD = 0.7 V 0.04 0.2 ⎯ mA 3
Leakage current ILEAK Output transistor,
Nch, VDS = 5.0 V, VDD = 5.0 V ⎯ ⎯ 60 nA 3
Response time tPLH ⎯ ⎯ ⎯ 60 μs 1
Detection voltage
temperature
coefficient*2 DET
DET
VTa V
−•Δ
−Δ Ta = −40 to +85 °C ⎯ ±100 ±350 ppm/
°C 1
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[] []
1000Cppm/
VTa V
V Typ.VCmV/
Ta
V
DET
DET
DET(S)
DET ÷°
−Δ
−Δ
×−=°
Δ
−Δ
•
3*2**1
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
18 Seiko Instruments Inc.
1-2. Detection Voltage Typ.1.5 V or More Products
Table 15 (Ta = 25 °C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test
circuit
Detection voltage*1 −VDET ⎯ −VDET(S)
×0.98 −VDET(S)
−VDET(S)
×1.02 V 1
Hysteresis width VHYS ⎯ −VDET
×0.03 −VDET
×0.05 −VDET
×0.08 V 1
Current consumption ISS VDD = 3.5 V S-80815 to 26 ⎯ 0.8 2.4
μA 2
VDD = 4.5 V S-80827 to 39 ⎯ 0.8 2.4
μA 2
VDD = 6.0 V S-80840 to 56 ⎯ 0.9 2.7
μA 2
VDD = 7.5 V S-80857 to 60 ⎯ 0.9 2.7
μA 2
Operating voltage VDD ⎯ 0.95 ⎯ 10.0 V 1
Output current IOUT Output transistor,
Nch, VDS = 0.5 V VDD = 1.2 V
S-80815 to 60 0.59 1.36 ⎯ mA 3
VDD = 2.4 V
S-80827 to 60 2.88 4.98 ⎯ mA 3
Leakage current ILEAK Output transistor,
Nch, VDS = 10.0 V, VDD = 10.0 V ⎯ ⎯ 100 nA 3
Response time tPLH ⎯ ⎯ ⎯ 60 μs 1
Detection voltage
temperature
coefficient*2 DET
DET
VTa V
−•Δ
−Δ Ta = −40 to +85 °C ⎯ ±100 ±350 ppm/
°C 1
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[] []
1000Cppm/
VTa V
V Typ.VCmV/
Ta
V
DET
DET
DET(S)
DET ÷°
−Δ
−Δ
×−=°
Δ
−Δ
•
3*2**1
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 19
2. CMOS Output Products
2-1. Detection Voltage Typ.1.4 V or Less Products
Table 16 (Ta = 25 °C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
circuit
Detection voltage*1 −VDET ⎯ −VDET(S)
×0.98 −VDET(S)
−VDET(S)
×1.02 V 1
Release voltage +VDET S-80808 0.802 0.834 0.867 V 1
S-80809 0.910 0.944 0.979 V 1
S-80810 1.017 1.054 1.091 V 1
S-80811 1.125 1.164 1.203 V 1
S-80812 1.232 1.273 1.315 V 1
S-80813 1.340 1.383 1.427 V 1
S-80814 1.448 1.493 1.538 V 1
Hysteresis width VHYS S-80808 0.018 0.034 0.051 V 1
S-80809 0.028 0.044 0.061 V 1
S-80810 0.037 0.054 0.071 V 1
S-80811 0.047 0.064 0.081 V 1
S-80812 0.056 0.073 0.091 V 1
S-80813 0.066 0.083 0.101 V 1
S-80814 0.076 0.093 0.110 V 1
Current consumption ISS VDD = 1.5 V S-80808 to 09 ⎯ 1.3 3.5 μA 2
VDD = 2.0 V S-80810 to 14 ⎯ 1.3 3.5 μA 2
Operating voltage VDD ⎯ 0.65 ⎯ 5.0 V 1
Output current IOUT Output transistor,
Nch, VDS = 0.5 V, VDD = 0.7 V 0.04 0.2 ⎯ mA 3
Output transistor,
Pch, VDS = 2.1 V, VDD = 4.5 V 2.9 5.8 ⎯ mA 4
Response time tPLH ⎯ ⎯ ⎯ 60 μs 1
Detection voltage
temperature
coefficient*2 DET
DET
VTa V
−•Δ
−Δ Ta = −40 to +85 °C ⎯ ±100 ±350 ppm/
°C 1
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[] []
1000Cppm/
VTa V
V Typ.VCmV/
Ta
V
DET
DET
DET(S)
DET ÷°
−Δ
−Δ
×−=°
Δ
−Δ
•
3*2**1
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
20 Seiko Instruments Inc.
2-2. Detection Voltage Typ.1.5 V or More Products
Table 17 (Ta = 25 °C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit Test
circuit
Detection voltage*1 −VDET ⎯ −VDET(S)
×0.98 −VDET(S)
−VDET(S)
×1.02 V 1
Hysteresis width VHYS ⎯ −VDET
×0.03 −VDET
×0.05 −VDET
×0.08 V 1
Current consumption ISS VDD = 3.5 V S-80815 to 26 ⎯ 0.8 2.4
μA 2
VDD = 4.5 V S-80827 to 39 ⎯ 0.8 2.4
μA 2
VDD = 6.0 V S-80840 to 56 ⎯ 0.9 2.7
μA 2
VDD = 7.5 V S-80857 to 60 ⎯ 0.9 2.7
μA 2
Operating voltage VDD ⎯ 0.95 ⎯ 10.0 V 1
Output current IOUT Output transistor,
Nch, VDS = 0.5 V VDD = 1.2 V
S-80815 to 60 0.59 1.36 ⎯ mA 3
VDD = 2.4 V
S-80827 to 60 2.88 4.98 ⎯ mA 3
Output transistor,
Pch, VDS = 0.5 V VDD = 4.8 V
S-80815 to 39 1.43 2.39 ⎯ mA 4
VDD = 6.0 V
S-80840 to 56 1.68 2.78 ⎯ mA 4
VDD = 8.4 V
S-80857 to 60 2.08 3.42 ⎯ mA 4
Response time tPLH ⎯ ⎯ ⎯ 60 μs 1
Detection voltage
temperature
coefficient*2 DET
DET
VTa V
−•Δ
−Δ Ta = −40 to +85 °C ⎯ ±100 ±350 ppm/
°C 1
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 3 to 4.)
*2. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[] []
1000Cppm/
VTa V
V Typ.VCmV/
Ta
V
DET
DET
DET(S)
DET ÷°
−Δ
−Δ
×−=°
Δ
−Δ
•
3*2**1
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 21
Test Circuits
1.
S-808xxC
Series
V
VDD
VDD
VSS
OUT
V
R*1
100 kΩ
*1. R is unnecessary for CMOS output products.
Figure 11
2.
S-808xxC
Series
A
VDD
VDD
VSS
OUT
Figure 12
3.
S-808xxC
Series
V
VDS
VDD
VDD
VSS
OUT
V
A
Figure 13
4.
S-808xxC
Series
V
VDD
VDS
VDD
VSS
OUT
V
A
Figure 14
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
22 Seiko Instruments Inc.
Timing Chart
1. Nch Open-drain Output Products
V
OUT
VDD
VSS
R
100 kΩ
Release voltage (+VDET)
Detection voltage (−VDET)
VDD
VSS
Minimum operating voltage
Output from the OUT pin
Hysteresis width (VHYS)
VDD
VSS
Figure 15
2. CMOS Output Products
V
OUT
VDD
VSS
Release voltage (+VDET)
Detection voltage (−VDET)
VDD
VSS
Minimum operating voltage
Hysteresis width (VHYS)
Output from the OUT pin
VSS
VDD
Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the
shaded region.
Figure 16
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 23
Operation
1. Basic Operation: CMOS Output (Active Low)
1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is
OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in
Figure 17 is OFF, the comparator input voltage is CBA
DDCB RRR V)RR(
++
•+ .
1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above
the detection voltage −VDET. When the VDD falls below −VDET (point A in Figure 18), the Nch transistor
becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time
the Nch transistor N1 in Figure 17 becomes ON, the comparator input voltage is changed to
BA
DDB RR VR
+
•.
1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the
VDD when the output is pulled up to the VDD.
1-4. The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still
appears even when the VDD surpasses −VDET, as long as it does not exceed the release voltage +VDET.
1-5. When the VDD rises above +VDET (point B in Figure 18), the Nch transistor becomes OFF and the Pch
transistor becomes ON to provide VDD level at the output.
VREF
Pch
Nch
N1
RC
RB
RA −
+
OUT
VSS
VDD
*1
*1
*1
*1. Parasiteic diode
Figure 17 Operation 1
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
24 Seiko Instruments Inc.
Hysteresis width (V
HYS
)
A
BV
DD
V
SS
Minimum operating voltage
Output from the OU T pin
V
DD
V
SS
(1) (2)
(3) (5)
(4)
Release voltage (+V
DET
)
Detection voltage (−V
DET
)
Figure 18 Operation 2
2. Other Characteristics
2-1. Temperature Characteristics of Detection Voltage
The shaded area in Figure 19 shows the temperature characteristics of the detection voltage.
−40 25
+0.945 mV/°C
−VDET [V]
85 Ta [°C]
−0.945 mV/°C
−VDET25
*1
*1. −VDET25 is an actual detection voltage value at 25°C.
Figure 19 Temperature Characteristics of Detection Voltage (Example for S-80827C)
2-2. Temperature Characteristics of Release Voltage
The temperature change Ta
VDET
Δ
+Δ of the release voltage is calculated by using the temperature
chnange Ta
VDET
Δ
−Δ of the detection voltage as follows:
Ta
V
V
V
Ta
VDET
DET
DETDET
Δ
−Δ
×
−
+
=
Δ
+Δ
The temperature change of the release voltage and the detection voltage have the same sign
consequently.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 25
2-3. Temperature Characteristics of Hysteresis Voltage
The temperature change of the hysteresis voltage is expressed as Ta
V
Ta
VDETDET
Δ
−Δ
−
Δ
+Δ and is calculated
as follows:
Ta
V
V
V
Ta
V
Ta
VDET
DET
HYSDETDET
Δ
−Δ
×
−
=
Δ
−Δ
−
Δ
+Δ
Standard Circuit
VDD
OUT
VSS
R
*1
100 kΩ
*1. R is unnecessary for CMOS output products.
Figure 20
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
Technical Terms
1. Detection Voltage (−VDET), Release Voltage (+VDET)
The detection voltage (−VDET) is a voltage at which the output turns to low. The detection voltage varies slightly
among products of the same specification. The variation of detection voltage between the specified minimum
(−VDET) Min. and the maximum (−VDET) Max. is called the detection voltage range (Refer to Figure 21).
Example: For the S-80815CN, the detection voltage lies in the range of 1.470≤(−VDET)≤1.530.
This means that some S-80815CNs have 1.470 V for −VDET and some have 1.530 V.
The release voltage (+VDET) is a voltage at which the output turns to high. The release voltage varies slightly
among products of the same specification. The variation of release voltages between the specified
minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range (Refer to Figure
22). The range is calculed from the actual detection voltage (−VDET) of a product and is expressed by
−VDET×1.03≤+VDET≤−VDET ×1.08.
Example: For the S-80815CN, the release voltage lies in the range of 1.514≤(+VDET)≤1.652.
This means that some S-80815CNs have 1.514 V for +VDET and some have 1.652 V.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
26 Seiko Instruments Inc.
V
DD
OUT
(
−
V
DET
) Max.
(
−
V
DET
) Min. Detec t io n vo lt age
range
Detection volta
g
e
(
+
V
DET
) Max.
(
+
V
DET
)
Min. Release voltage range
V
DD
Release volta
g
e
OUT
Figure 21 Detection Voltage (CMOS Output Products) Figure 22 Release Voltage (CMOS Output Products)
Remark Although the detection voltage and release voltage overlap in the range of 1.514 V to 1.530 V,
+VDET is always larger than −VDET.
2. Hysteresis Width (VHYS)
The hysteresis width is the voltage difference between the detection voltage and the release voltage (The
voltage at point B −The voltage at point A =VHYS in Figure 18). The existence of the hysteresis width
prevents malfunction caused by noise on input signal.
3. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and release
of a voltage detector. The through-type current is large in CMOS output products, small in Nch open-drain
output products.
4. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 23), taking a CMOS active
low product for example, the through-type current which is generated when the output goes from low to high
(release) causes a voltage drop equal to [through-type current]×[input resistance] across the resistor. When
the input voltage drops below the detection voltage (−VDET) as a result, the output voltage goes to low level.
In this state, the through-type current stops and its resultant voltage drop disappears, and the output goes
from low to high. A through-type current is again generated, a voltage drop appears, and repeating the
process finally induces oscillation.
OUT
VSS
VDD
RB
RA
VIN S-808xxCL
Figure 23 An Example for Bad Implementation of Input Voltage Divider
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 27
Electrical Characteristics for Customized Products
1. S-80824KNUA-D2BT2x, S-80824KNY-n2-U
Table 18 (Ta = 25 °C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
circuit
Detection voltage*1 −VDET ⎯ 2.295 2.400*2 2.505 V 1
Release voltage +VDET ⎯ 4.300 4.400 4.500 V 1
Current consumption ISS VDD=6.0 V ⎯ 0.8 2.4 μA 2
Operating voltage VDD ⎯ 0.95 ⎯ 10.0 V 1
Output current IOUT VDD = 0.95 V 0.03 0.24 ⎯ mA 3
Output transistor,
Nch, VDS = 0.5 V VDD = 1.2 V 0.23 0.50 ⎯ mA 3
Leakage current ILEAK Output transistor,
Nch, VDD = 10.0 V, VDS = 10.0 V ⎯ ⎯ 0.1 μA 3
Response time tPLH ⎯ ⎯ ⎯ 60 μs 1
Detection voltage
temperature
coefficient*3 DET
DET
VTa V
−•Δ
−Δ Ta = −40 to 85 °C ⎯ ±100 ±350 ppm/°C 1
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[] []
1000Cppm/
VTa V
V Typ.VCmV/
Ta
V
DET
DET
DET(S)
DET ÷°
−Δ
−Δ
×−=°
Δ
−Δ
•
3*2**1
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
28 Seiko Instruments Inc.
2. S-80844KLUA-D2AT2x, S-80844KLY-n2-U
Table 19 (Ta = 25 °C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
circuit
Detection voltage*1 −VDET ⎯ 4.295 4.450*2 4.605 V 1
Release voltage +VDET ⎯ ⎯ ⎯ 4.700 V 1
Current consumption ISS VDD = 6.0 V ⎯ 1.0 3.0 μA 2
Operating voltage VDD ⎯ 0.95 ⎯ 10.0 V 1
Output current IOUT VDD = 1.2 V 0.23 0.50 ⎯ mA 3
Output transistor,
Nch, VDS = 0.5 V VDD = 2.4 V 1.60 3.70 ⎯ mA 3
Output transistor,
Pch, VDS = 0.5 V VDD = 4.8 V 0.36 0.62 ⎯ mA 4
Response time tPLH ⎯ ⎯ ⎯ 60 μs 1
Detection voltage
temperature
coefficient*3 DET
DET
VTa V
−•Δ
−Δ Ta = −40 to 85 °C ⎯ ±100 ±350 ppm/°C 1
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[] []
1000Cppm/
VTa V
V Typ.VCmV/
Ta
V
DET
DET
DET(S)
DET ÷°
−Δ
−Δ
×−=°
Δ
−Δ
•
3*2**1
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 29
3. S-80846KNUA-D2CT2x, S-80846KNY-n2-U
Table 20 (Ta = 25 °C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
circuit
Detection voltage*1 −VDET ⎯ 4.500 4.600*2 4.700 V 1
Hysteresis width VHYS ⎯ ⎯ 0.05 0.10 V 1
Current consumption ISS VDD = 6.0 V ⎯ 0.9 2.7 μA 2
Operating voltage VDD ⎯ 0.95 ⎯ 10.0 V 1
Output current IOUT VDD = 1.2 V 0.59 1.36 ⎯ mA 3
Output transistor,
Nch, VDS = 0.5 V VDD = 2.4 V 2.88 4.98 ⎯ mA 3
Leakage current ILEAK Output transistor,
Nch, VDD = 10.0 V, V DS = 10.0 V ⎯ ⎯ 0.1 μA 3
Response time tPLH ⎯ ⎯ ⎯ 60 μs 1
Detection voltage
temperature
coefficient*3 DET
DET
VTa V
−•Δ
−Δ
Ta = −40 to 85 °C ⎯ ±100 ±350 ppm/°C 1
*1. −VDET: Actual detection voltage value
*2. Specified detection voltage value (−VDET(S))
*3. The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
[]
()
[] []
1000Cppm/
VTa V
V Typ.VCmV/
Ta
V
DET
DET
DET(S)
DET ÷°
−Δ
−Δ
×−=°
Δ
−Δ
•
3*2**1
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
Precautions
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
• In CMOS output products of the S-808xxC series, the through-type current flows at the detection and the
release. If the input impedance is high, oscillation may occur due to the voltage drop by the through-type
current during releasing.
• In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the
power supply voltage (VDD) is slow near the detection voltage.
• When designing for mass production using an application circuit described herein, the product deviation and
temperature characteristics should be taken into consideration. SII shall not bear any responsibility for the
products on the circuits described herein.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the
products including this IC upon patents owned by a third party.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
30 Seiko Instruments Inc.
Typical Characteristics (Typical Data)
1. Detection Voltage (VDET) - Temperature (Ta)
0.75
0.80
0.85
0.90
-40 -20 0 20 40 60 80
Ta (°C)
VDET(V)
S-80808CL
+VDET
-VDET
1.25
1.30
1.35
1.40
1.45
1.50
1.55
-40 -20 0 20 40 60 80
Ta (°C)
V
DET (V)
S-80814CL
+V
DET
-V
DET
1.45
1.50
1.55
1.60
-40-200 20406080
Ta (°C)
VDET(V)
S-80815CL
+VDET
-VDET
5.80
5.90
6.00
6.10
6.20
6.30
6.40
-40 -20 0 20 40 60 80
Ta (°C)
V DET (V)
S-80860CL
+V
DET
-V
DET
2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)
3.0
4.0
5.0
6.0
8.0
-40 -20 0 20 40 60 80
Ta (°C )
V
HYS (%)
S-80808CL
7.0
3.0
4.0
5.0
6.0
8.0
-40 -20 0 20 40 60 80
Ta (°C)
V
HYS (%)
S-80814CL
7.0
3.0
4.0
5.0
6.0
8.0
-40 -20 0 20 40 60 80
Ta (°C )
V
HYS (%)
S-80815CL
7.0
4.0
5.0
6.0
7.0
8.0
-40 -20 0 20 40 60 80
Ta (°C)
V HYS (%)
S-80860CL
3.0
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 31
3. Current Consumption (ISS) - Input Voltage (VDD)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 1.0 2.0 3.0 4.0 5.0 6.0
VDD (V)
ISS
(
μ
A
)
S-80808CL
9.3
μ
A
Ta=25°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 1.0 2.0 3.0 4.0 5.0 6.0
VDD (V)
S-80814CL
21.5
μ
A
Ta=25°C
ISS
(
μ
A
)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 2.0 4.0 6.0 8.0 10.0 12.0
VDD (V)
ISS
(
μ
A
)
S-80815CL
4.7 μA
Ta=25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0 2.0 4.0 6.0 8.0 10.0 12.0
VDD (V)
S-80860CL
12.8
μ
A
Ta=25°C
ISS
(
μ
A
)
4. Current Consumption (ISS) - Temperature (Ta)
0.0
0.5
1.0
1.5
2.0
-40 -20 0 20 40 60 80
Ta (°C)
ISS
(
μ
A
)
S-80808CL VDD=1.5 V
0.0
0.5
1.0
1.5
2.0
-40 -20 0 20 40 60 80
Ta (°C)
ISS
(
μ
A
)
S-80814CL VDD=2.0 V
0.0
0.5
1.0
1.5
2.0
-40 -20 0 20 40 60 80
Ta (°C)
ISS
(
μ
A
)
S-80815CL VDD=3.5 V
0.0
0.5
1.0
1.5
2.0
-40 -20 0 20 40 60 80
Ta (°C)
ISS
(
μ
A
)
S-80860CL VDD=7.5 V
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
32 Seiko Instruments Inc.
5. Nch Transistor Output Current (IOUT) – VDS
0
1.0
2.0
3.0
4.0
5.0
0 0.5 1.0 1.5 2.0 2.5
VDS (V)
IOUT (mA)
S-80814CL/CN Ta=25°C
VDD=0.7 V
VDD=1.0
VDD=1.3 V
0
10
20
30
40
50
0 1.0 2.0 3.0 4.0 5.0
VDS (V)
IOUT (mA)
6.0 V
S-80860CL/CN Ta=25°C
VDD=1.2 V
2.4 V
3.6 V
4.8 V
6. Pch Transistor Output Current (IOUT) -VDS
S-80808CL
0
1.0
2.0
3.0
4.0
5.0
0 0.5 1.0 1.5 2.0 2.5
VDS (V)
IOUT (mA)
Ta=25ºC
VDD=2.9V
VDD=2.4V
VDD=1.4 V
VDD=0.9 V
VDD=1.9 V
S-80815CL
0
5
10
15
20
25
30
0 2.0 4.0 6.0 8.0 10.0
VDS (V)
IOUT (mA)
Ta=25ºC
8.4 V
7.2 V
6.0 V
3.6 V
VDD=2.4 V
4.8 V
7. Nch Transistor Output Current (IOUT) - Input Voltage (VDD)
0
1.5
3.0
4.5
6.0
0 0.5 1.0 1.5 2.0
VDD (V)
IOUT (mA)
S-80814CL/CN VDS=0.5 V
Ta=85°
Ta=-40°C
Ta=25°C
0
5
10
15
20
0 2.0 4.0 6.0 8.0
VDD (V)
IOUT (mA)
S-80860CL/CN VDS=0.5 V
Ta=-40°C
Ta=25°C
Ta=85°C
8. Pch Transistor Output Current (IOUT) - Input Voltage (VDD)
0
0.5
1.0
1.5
2.0
2.5
3.0
0 1.0 2.0 3.0 4.0 5.0 6.0
VDD (V)
IOUT (mA)
S-80808CL VDS=0.5 V
Ta=-40°C
Ta=25°C
Ta=85°C
0
1
2
3
4
5
6
0 2.0 4.0 6.0 8.0 10.0 12.0
VDD (V)
IOUT (mA)
S-80815CL VDS=0.5 V
Ta=-40°C
Ta=25°C
Ta=85°C
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 33
9. Minimum Operating Voltage - Input Voltage (VDD)
0.0
0.3
0.6
0.9
1.2
0.0 0.2 0.4 0.6 1.0
VDD (V)
VOUT (V)
S-80808CN Pul l-up to VDD 100 kΩ
T
a=-40°C
Ta=25° C
Ta=85°C
0.8
0.0
1.0
2.0
3.0
4.0
0.2 0.4 0.6 0.8 1.0
VDD (V)
VOUT (V)
S-80808CN
P
ull-up to 3 V
Ta=-40°C
Ta=25°C
Ta=85°C
0.0
0.5
1.0
1.5
2.0
0 0.5 1.0 1.5 2.0
VDD (V)
VOUT (V)
S-80815 CN Pull-up to VDD 100 kΩ
Ta=-40°C
Ta=25°C
Ta=85°C
0.0
1.0
2.0
3.0
4.0
0 0.5 1.0 1.5 2.0
VDD (V)
VOUT (V)
S-80815CN Pull-up t o 3 V
Ta=-40°C
Ta=25° C
Ta=85°C
VOUT(V)
PULL-UP
PULL-UP×0.1
0 VDD(V)
VDDmin
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
PULL-UP (V)
VDDmin (V)
S-80808CN Pull-up to VDD:100 k Ω
Ta=-40°C
T
a=25°C Ta=85°C
Remark VDDmin. is defined by the VDD voltage at
which VOUT goes below 10% of
PULL-UP voltage when the VDD
increase from 0 V.
0.40
0.45
0.50
0.55
0.60
0.65
0.70
0.75
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
PUL L-UP (V)
VDDmin (V)
S-80815 CN Pu ll-up to VDD:100 k
Ω
Ta=-40° C
T
a=25° C Ta=85°C
Figure 24
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
34 Seiko Instruments Inc.
10. Dynamic Response - COUT
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (μF)
Respon se time (ms)
S-80808CL Ta=25°C
tpLH
tpHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
Load capacitance (μF)
Resopnse time (ms)
S-80808CN Ta=25°C
tpHL
tpLH
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Load capacitanse (μF)
Respon se time (ms)
S-80814CL Ta=25°C
tpLH
tpHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
Load Capacitance (μF)
Response time (ms)
S-80814CN Ta=25°C
tpHL
tpLH
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Load Capacitance (μF)
Response time (ms)
S-80815CL Ta=25°C
tpLH
tpHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
Load Capacitance (μF)
Response time (ms)
S-80815CN Ta=25°C
tpHL
tpLH
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Load Capacitance (μF)
Response time (ms)
S-80860CL Ta=25°C
tpLH
tpHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
Load Capacitance (μF)
Respone time (ms)
S-80860CN Ta=25°C
tpHL
tpLH
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 35
OUT
VSS
VDD
S-8 08x xC
Series
V
R*1
100 kΩ
COUT
VDD
V
VIH
Output voltage
Input voltagae
VIL
VDD
tpHL t
pLH
VIH=10 V, VIL=0.95 V
1
μ
s
1 μs
VDD×10 %
VDD×90 % *1. R is unnecessary for CMOS output products.
Figure 25 Measurement Condition for Response Time Figure 26 Measurement Circuit for Response Time
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
Application Circuit Examples
1. Microcomputer Reset Circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may
be performed or the contents of the memory register may be lost. When power supply voltage returns to
normal, the microcomputer needs to be initialized before normal operations can be done.
Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered.
Reset circuits shown in Figures 27 to 28 can be easily constructed with the help of the S-808xxC series,
that has low operating voltage, a high-precision detection voltage and hysteresis.
VSS
VDD
Microcomputer
S-
808xxCL
VSS
(Only for Nch open-drain products)
VDD1 VDD2
Microcomputer
S-
808xxCN
Figure 27 Reset Circuit Example(S-808xxCL) Figure 28 Reset Circuit Example (S-808xxCN)
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-808xxC Series Rev.6.1_00
36 Seiko Instruments Inc.
2. Power-on Reset Circuit
A power-on reset circuit can be constructed using Nch open-drain output product of S-808××C Series.
(Nch ope n-drai n produ cts)
OUT
VIN
VSS
VDD
S-
808xxCN
R*1
C
Di*2
(R≤75 k Ω)
*1. Resistor R should be 75 kΩ or less to prevent oscillation.
*2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the
power falling,Di can be removed when the delay of the falling time is not important.
Figure 29
VDD
(V)
t (s )
OUT
(V)
t ( s)
Figure 30
Remark When the power rises sharply as shown in the Figure 31 left, the output may goes to the high level
for an instant in the undefined region where the output voltage is undefined since the power
voltage is less than the minimum operation voltage.
VDD
(V)
t (s)
OUT
(V)
t (s)
Figure 31
SUPER-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
Rev.6.1_00 S-808xxC Series
Seiko Instruments Inc. 37
3. Change of Detection Voltage
In Nch open-drain output products of the S-808xxC series, detection voltage can be changed using
resistance dividers or diodes as shown in Figures 32 to 33. In Figure 32, hysteresis width also changes.
(Nch open-drain
output products)
RA
*1
OUT
VIN
VSS
VDD
+
−
S-
808xxCN
RB
(RA≤75 k Ω)
DET
B
BA V
RRR
voltagae Detection −•
+
=
HYS
B
BA V
RRR
widthHysterisis •
+
=
(Nch open-drain
output product)
Vf1
OUT
VIN
VSS
VDD
S-
808xxCN
Vf2
Detection voltage=Vf1+Vf2+(−VDET)
*1. RA should be 75 kΩ or less to prevent oscillation.
Caution If RA and RB are large, the hysteresis
width may aloso be larger than the
value given by the above equation due
to the through-type current (which
flows slightly in an Nch open-drain
product).
Figure 32 Figure 33
Caution The above connection diagram and constants do not guarantee correct operation. Perform
sufficient evaluation using the actual application to set the constants.
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
0.3 +0.1
-0.05
0.4 +0.1
-0.05
0.05
12
43
0.16+0.1
-0.06
1.3±0.2
2.0±0.2
No. NP004-A-P-SD-1.1
SC82AB-A-PKG Dimensions
NP004-A-P-SD-1.1
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
1.1±0.1
0.2±0.05
4.0±0.1
2.0±0.05
4.0±0.1
2.2±0.2
(0.7)
No. NP004-A-C-SD-3.0
NP004-A-C-SD-3.0
SC82AB-A-Carrier Tape
Feed direction
12
34
ø1.05±0.1
ø1.5 +0.1
-0
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
No. NP004-A-C-S1-2.0
NP004-A-C-S1-2.0
SC82AB-A-Carrier Tape
4.0±0.1 2.0±0.1
4.0±0.1 ø1.05±0.1
0.2±0.05
1.1±0.1
Feed direction
2.3±0.15
12
34
ø1.5 +0.1
-0
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
QTY. 3,000
(60°)
(60°)
ø13±0.2
12.5max.
9.0±0.3
No. NP004-A-R-SD-1.1
NP004-A-R-SD-1.1
SC82AB-A-Reel
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
2.9±0.2
1.9±0.2
0.95±0.1
0.4±0.1
0.16 +0.1
-0.06
123
4
5
No. MP005-A-P-SD-1.2
MP005-A-P-SD-1.2
SOT235-A-PKG Dimensions
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1
1.4±0.2
0.25±0.1
3.2±0.2
123
45
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 3,000
No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
0.4±0.05
1.5±0.1
4.5±0.1
1.6±0.2
1.5±0.1 1.5±0.1
0.45±0.1
0.4±0.1
0.4±0.1
45°
312
No. UP003-A-P-SD-1.1
UP003-A-P-SD-1.1
SOT893-A-PKG Dimensions
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
2.0±0.1
0.3±0.05
8.0±0.1
ø1.5+0.1
-0
2.0±0.05
ø1.5+0.1
-0
4.75±0.1
5° max.
No. UP003-A-C-SD-1.1
UP003-A-C-SD-1.1
SOT893-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches : 40.0±0.2)
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
13.0±0.3
16.5max.
(60°)
(60°)
QTY. 1,000
No. UP003-A-R-SD-1.1
UP003-A-R-SD-1.1
SOT893-A-Reel
Enlarged drawing in the central part
1.2±0.04
0.65
0.2±0.05
0.48±0.02
0.08
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-4.0
No. PF004-A-P-SD-4.0
+0.05
-0.02
12
3
4
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PF004-A-C-SD-1.0
SNT-4A-A-Carrier Tape
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.45±0.1 0.65±0.05
0.25±0.05
1
2
34
5°
No. PF004-A-C-SD-1.0
+0.1
-0
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 5,000
No. PF004-A-R-SD-1.0
PF004-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-Reel
No.
TITLE
SCALE
UNIT mm
SNT-4A-A-Land Recommendation
Seiko Instruments Inc.
PF004-A-L-SD-4.0
No. PF004-A-L-SD-4.0
0.3
0.35
0.52
1.16
0.52
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1. (0.25 mm min. / 0.30 mm typ.)
2. (1.10 mm ~ 1.20 mm)
1
2
0.03 mm
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm).
1.
2.
※1. 䇋⊼ᛣ⛞Ⲭᓣⱘᆑᑺ(0.25 mm min. / 0.30 mm typ.)DŽ
※2. 䇋䇋࣓ᇕ㺙Ё䯈ᠽሩ⛞Ⲭᓣ (1.10 mm ~ 1.20 mm)DŽ
⊼ᛣ1. 䇋࣓㛖ൟᇕ㺙ⱘϟ䴶ࠋϱ㔥ǃ⛞䫵DŽ
2. ᇕ㺙ϟǃᏗ㒓Ϟⱘ䰏⛞㝰ᑺ (Ң⛞Ⲭᓣ㸼䴶䍋) 䇋ࠊ0.03 mmҹϟDŽ
3. 㝰ⱘᓔষሎᇌᓔষԡ㕂䇋Ϣ⛞Ⲭᓣᇍ唤DŽ
4. 䆺㒚ݙᆍ䇋খ䯙 "SNTᇕ㺙ⱘᑨ⫼ᣛ"DŽ
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
No. YS003-D-P-SD-2.0
YS003-D-P-SD-2.0
TO92-D-PKG Dimensions
5.2max.
0.45±0.1
1.27
0.45±0.1
4.2max.
0.6max.
Marked side
mm
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
No. YZ003-E-P-SD-2.0
YZ003-E-P-SD-2.0
TO92-E-PKG Dimensions
5.2max. 4.2max.
1.27
Marked side
0.45±0.1
0.45±0.1
2.5 +0.4
-0.1
0.6max.
mm
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
12.7±1.0
6.35±0.4 ø4.0±0.2
1.0max. 1#pin 3#pin
1.0max. 1.0max.
0.7±0.2
1.45max.
Feed direction
Z type
12.7±0.3(20 pitches : 254.0±1.0)
Marked side
No. YZ003-E-C-SD-1.1
YZ003-E-C-SD-1.1
TO92-E-Radial Tape
mm
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
QTY. 2,000
YZ003-E-Z-SD-2.0
TO92-E-Ammo Packing
333
43
162
Spacer(Sponge)
312 35
18
154
314
Side spacer placed in front side
Space more than 4 strokes
No. YZ003-E-Z-SD-2.0
mm
www.sii-ic.com
• The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
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written permission of Seiko Instruments Inc.
• The products described herein are not designed to be radiation-proof.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
