FES6, NRVFES6 Series 6 A, 200 V - 600 V Surface Mount Ultrafast Rectifiers Features * * * * * * * * * Very Low Profile: Typical Height of 1.1 mm Ultrafast Recovery Time Low Forward Voltage Drop Low Thermal Resistance Very Stable Operation at Industrial Temperature, 150C RoHS Compliant Green Molding Compound as per IEC61249 Standard Lead Free in Compliance with EU RoHS 2011/65/EU Directive NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable www.onsemi.com 3 2 1 TO-277 3 LEAD CASE 340BQ MAXIMUM RATINGS Parameter Repetitive Peak Reverse Voltage Symbol FES6D FES6G FES6J VRRM Value Unit Cathode V 200 400 600 Average Forward Rectified Current IF(AV) 6 A Peak Forward Surge Current: 8.3 ms Single Half Sine-Wave Superimposed on Rated Load IFSM 80 A Operating Junction Temperature Range TJ -55 to +175 C TSTG -55 to +175 C Storage Temperature Range 3 Anode 1 Anode 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Part Number Package Shipping TO-277 3L (with DAP Option only) 5000 / Tape & Reel Top Mark FES6D NRVFES6D* FES6G NRVFES6G* FES6J NRVFES6J* FES6D FES6G FES6J For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. (c) Semiconductor Components Industries, LLC, 2016 January, 2019 - Rev. 3 1 Publication Order Number: FES6D/D FES6, NRVFES6 Series THERMAL CHARACTERISTICS (Values are at TA = 25C unless otherwise noted) (Note 1) Parameter Symbol Value Unit Thermal Characteristics, Junction-to-Lead, Thermocouple Soldered to Cathode YJL 6 C/W Thermal Resistance, Junction-to-Ambient RqJA 100 C/W 1. Per JESD51-3 Recommended Thermal Test Board. ELECTRICAL CHARACTERISTICS (Values are at TA = 25C unless otherwise noted) Value Symbol Parameter Conditions FES6D FES6G FES6J Unit VF Maximum Instantaneous Forward Voltage (Note 2) IF = 6 A 1.05 1.20 2.2 V IF = 6 A, TJ = 125C 0.90 1.00 1.80 IR Maximum Reverse Current at Rated VR TJ = 25C TJ = 125C 2 200 mA 500 CJ Typical Junction Capacitance VR = 4 V, f = 1 MHz 60 45 Trr Typical Reverse Recovery Time IF = 0.5 A, IR = 1 A, IRR = 0.25 A 25 IF = 1 A, di/dt = 50 A/ms, VR = 30 V 45 pF ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 ms, 1% duty cycle www.onsemi.com 2 FES6, NRVFES6 Series TYPICAL CHARACTERISTICS 10 10 FES6G IF - FORWARD CURRENT (A) IF - FORWARD CURRENT (A) FES6D 1 o TA = -55 C 0.1 o TA = 25 C o TA = 75 C 0.01 o TA = 125 C 1 o TA = -55 C o 0.1 TA = 25 C o TA = 75 C 0.01 o TA = 125 C o TA = 150 C o 0.001 TA = 150 C 0.0 0.2 0.4 0.6 0.8 1.0 0.001 0.0 1.2 VF - FORWARD VOLTAGE (V) 0.4 0.6 IR - LEAKAGE CURRENT (A) 1 o TA = -55 C 0.1 o TA = 25 C o TA = 75 C 0.01 o o TA = 150 C o TA = 125 C 10 1.4 0.1 0.01 0.001 TA = 125 C 0.5 1.0 o TA = -55 C o TA = 150 C 0.0 FES6D o TA = 75 C 1 o 1.5 2.0 1E-4 2.5 TA = 25 C 0 50 100 150 200 VR - REVERSE VOLTAGE (V) VF - FORWARD VOLTAGE (V) Fig 4. Typical Reverse Characteristics for FES6D Fig 3. Typical Forward Characteristics for FES6J 100 100 o TA = 150 C FES6G o TA = 125 C IR - LEAKAGE CURRENT (A) IR - LEAKAGE CURRENT (A) 1.2 100 FES6J 10 1 o TA = 75 C 0.1 0.01 50 100 150 200 250 300 350 FES6J o TA = 125 C 10 1 o TA = 75 C 0.1 0.01 o TA = 25 C 0 o TA = 150 C TA = -55 C o 0.001 1.0 Fig 2. Typical Forward Characteristics for FES6G 10 0.001 0.8 VF - FORWARD VOLTAGE (V) Fig 1. Typical Forward Characteristics for FES6D IF - FORWARD CURRENT (A) 0.2 o 400 450 500 550 600 0.001 TA = 25 C 0 VR - REVERSE VOLTAGE (V) 50 100 o TA = -55 C 150 200 250 300 350 400 450 500 550 600 VR - REVERSE VOLTAGE (V) Fig 5. Typical Reverse Characteristics for FES6G Fig 6. Typical Reverse Characteristics for FES6J www.onsemi.com 3 FES6, NRVFES6 Series 1000 8 7 CJ - JUNCTION CAPACITANCE (pF) IF - AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS TL (Cathode) 6 5 4 3 2 TA 1 0 0 25 50 75 100 125 150 f=1MHz 100 FESD6J 10 FESD6D & FESD6G 1 0.1 175 1 10 VR - REVERSE BIAS VOLTAGE (V) o TEMPERATURE ( C) Fig 8. Typical Junction Capacitance Fig 7. Forward Current Derating Curve www.onsemi.com 4 100 FES6, NRVFES6 Series PACKAGE DIMENSIONS TO-277-3LD CASE 340BQ ISSUE O www.onsemi.com 5 FES6, NRVFES6 Series ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. 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