Philips Semiconductors Product specification NPN medium power transistor BCP68 FEATURES High current (max. 1 A) e Low voltage (max. 20 V). APPLICATIONS e General purpose switching and amplification under high current conditions. DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complement: BCP69. QUICK REFERENCE DATA PINNING DESCRIPTION 1 base 2,4 collector 3 emitter [ | UU. U; Top view Fig.1 Simplified outline (SOT223) and symbol. MAME? SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vecso collector-base voltage open emitter - 32 Vv VcEeo collector-emitter voltage open base - 20 Vv tom peak collector current - 2 A Prot total power dissipation Tamb < 25 SC - 1.37 Ww Hee DC current gain le = 500 MA; Vee =1V 85 375 fr transition frequency lo = 10MA; Vee =5V; f= 100MHz | 40 ~ MHz 1997 Apr 09 385 Philips Semiconductors Product specification NPN medium power transistor BCP68 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcoBo collector-base voltage open emitter - 32 V Vceo collector-emitter voitage open base - 20 Vv VegBo emitter-base voltage open collector - 5 Vv Ico collector current (DC) - 1 A lon peak collector current - 2 A lau peak base current - 200 mA Prot total power dissipation Tamb S 25 C; note 1 ~ 1.37 WwW Tsig storage temperature ~65 +150 Cc Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm?. For other mounting conditions, see Thermal considerations for SOT223 in the General part of handbook SC04. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rit, j-a thermal resistance from junction to ambient note 1 91 K/W Pin j-s thermal resistance from junction to soldering point 10 KAW Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm?. For other mounting conditions, see Thermal considerations for SOT223 in the General part of handbook SC04". 1997 Apr 09 386 Philips Semiconductors Product specification NPN medium power transistor BCP68 CHARACTERISTICS T, = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. } UNIT leBo collector cut-off current le = 0; Veg = 25 V - 100 jnA le = 0; Veg = 25 V; Tj = 150C - ~ 10 pA leBo emitter cut-off current lc = 0; Vep=5V - ~ 100 [nA hee DC current gain lo = 5 MA; Voge = 10 V 50 ~ - Ic = 500 MA; Vce = 1 V; see Fig.2 85 ~ 375 Io = 1A; Voge = 1 V; see Fig.2 60 ~ - Nee DC current gain lo = 500 mA; Vcg = 1 V; see Fig.2 BCP68-10 - - 160 BCP68-16 700 | - 250 BCP68-25 160 | - - Voesat collector-emitter saturation voltage | Ic = 1 A; Ip = 100 mA - - 500 | mV Vee base-emitter voltage Ic =5 MA; Voge = 10 V - 620 |- mV lc=1AiVoe=1V - ~ 1 Vv Cy collector capacitance le =ig = 0; Veg = 5 Vi f = 1 MHz - 38 - oF fy transition frequency Io = 10 MA; Voge = 5 V; f = 100 MHz 40 ~ - MHz Nee, DC current gain ratio of the lic =0.5 A; [Vogl = 1V ~ - 16 Rees complementary pairs Veg =1V. Fig.2 DC current gain; typical values. MGDR44 1 1997 Apr 09 387